• Title/Summary/Keyword: 기생소자

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Noble SOI

  • 정주영
    • Electrical & Electronic Materials
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    • v.12 no.9
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    • pp.57-63
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    • 1999
  • SOI 구조의 MOSFET은 제조공정이 상대적으로 간단하며 CMOS 래치 업 현상이 일어나지 않고, soft error에 의한 회로의 오동작 가능성이 매우 낮은 이외에도 낮은 기생 정전용량 및 누설전류 특성을 가지므로 0.1 미크론 이하의 소자를 제작하는데 적합하여 저전압, 초고속 VLSI 설계에 적합한 소자로 각광받고 있다. 본고에서는 새로운 구조의 SOI MOSFET 구조들의 특성과 장, 단점을 검토하고 나아가 BJT(Bipolar Junction Transistor) 및 기타 소자들을 SOI 구조로 제작한 결과에 대해 간단히 검토함으로써 1999년 현재 SOI 기술의 현황을 소개하고자 한다.

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U-Shaped Broadband RFID Tag Antenna with a Parasitic Element (기생소자를 가지는 U-형태의 광대역 RFID 태그 안테나)

  • Lee, Sang-Woon;Cho, Chi-Hyun;Lee, Kee-Keun;Choo, Ho-Sung;Park, Ik-Mo
    • The Journal of Korean Institute of Electromagnetic Engineering and Science
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    • v.20 no.1
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    • pp.75-82
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    • 2009
  • In this paper, we proposed a U-shaped broadband RFID tag antenna with a parasitic element operating at UHF band. The proposed tag antenna consists of a U-shaped half wavelength dipole antenna and an inverse U-shaped parasitic element inside the U-shaped dipole antenna. In order to have good impedance matching, the commercial tag chip is attached to the lower center of the rectangular shaped feed. On the condition of VSWR<2, the tag antenna had the measured bandwidth of 4.96 % from 882 to 927 MHz and showed the gain deviation of less than 3.16 dB. On the condition of VSWR<5.8, the tag antenna satisfies the worldwide UHF RFID bandwidth and is showed the gain deviation of less than 5.07 dB. The minimum gain deviation characteristic appears near the center of bandwidth which minimizes variation of gain deviation characteristic with respect to the frequency.

A Parasitic Elements Extraction of the Distributed Elements and an Application of the BPF Using the Short-Open Calibration Method (단락 개방 Calibration 방법을 이용한 분포 정수 소자의 기생 소자 추출 및 대역 통과 필터에의 응용)

  • Kim, Yu-Seon;Nam, Hun;Lim, Yeong-Seog
    • The Journal of Korean Institute of Electromagnetic Engineering and Science
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    • v.20 no.2
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    • pp.115-123
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    • 2009
  • In this paper, we extract the parasitic elements of the transmission line with the defected ground structure(DGS) and the short-circuited comb line section using the Short-Open Calibration(SOC). The scattering matrixes of short, open and the distributed elements in microstrip line are measured by full electro-magnetic(EM) simulator and Vector Network Analyser(VNA). The electro-magnetic effects of the proposed structures are considered by the II and T equivalent circuits with frequency independent elements, and the relations between the measured scattering parameters and the elements in the circuits are shown by performing 2 port network analysis. Moreover, to design the 2.4 GHz bandpass filter with second order butterworth prototype, the proposed methods are applied. As results, the measured $S_{11}$ and $S_{21}$ indicate -20 dB and -1.3 dB at center frequency, and these are shown within 5 % error compare to the predicted results at $0.5{\sim}5\;GHz$.

Investigation on Frequency Spectral Characteristics in Switching Frequency Modulation Control (스위칭주파수 변조제어의 주파수 스펙트럼 특성 고찰)

  • 박석하;김양모
    • The Transactions of the Korean Institute of Power Electronics
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    • v.5 no.3
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    • pp.221-228
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    • 2000
  • 본 논문에서는 전기·전자 장비의 활용이 확대되면서 더욱 더 관심이 고조되고 있는 전자파장해에 대하여 논하고자 한다. 기존 PWM 직류전원장치에서는 회로 소자 및 배치에 따른 기생소자와 갑작스런 전압/전류의 변화에 의해 전자파장해를 발생시킨다. 본 논문에서는 PWM 직류전원장치에서 발생하는 전자파장해의 특성을 고찰하고, 출력전압 조절에 큰 영향을 주지 않는 범위내에서 PWM 제어가 가능하면서 두 개의 고정된 스위칭주파수로 연속적으로 변조하는 Bi-FM 변조제어방식과 랜덤하게 변화하는 스위칭주파수 변조제어방식을 이용하여 전도잡음을 저감시킬 수 있는 변조방식을 논할 것이다. 또한 이들 변조 방식의 주파수 스펙트럼 특성을 비교·분석하여 설명하고, 제어기를 분석·설계하여 실험을 통하여 스위칭주파수와 그 고조파 주파수들의 측대역으로 전도잡음이 분산되고 전도잡음의 피크치가 감소됨을 확인하고자 한다.

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차세대 반도체 소자용 저유전물질 개발과 현황

  • 최치규
    • Proceedings of the Korean Vacuum Society Conference
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    • 1999.07a
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    • pp.155-155
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    • 1999
  • 반도체 소자의 초고집적화와 고속화에 따라 최소 선폭이 급격히 줄어듬에 따라 현재 사용되고 있는 다층금속배선의 층간절연막 0.18$\mu\textrm{m}$ 급 이상의 소자에 적용할 경우 기생정전용량이 증가하여 신호의 지연 및 금속배선간에 상호간섭현상으로 반도체 소자의 동작에 심각한 문제가 대두되고 있다. 이러한 물제를 해결하기 위하여 nonoporous silica, fluorinated amorphous carbon, polyimides, poly(arylene)ether, parylene, AF4, poly(tetrafluoroethylene), divinyl siloxane bisbenzocyclobutene, Silk, 그리고 유무기 hybrid nanofoam 등이 저유전물질로 각광을 받고 있으며, 여기에 대한 연구가 우리나라를 비롯하여 미국, 일본 등에서 많은 연구가 이루어지고 있다. 따라서 본 연구에서는 2003년에 개발될 0.13$\mu\textrm{m}$급 이상의 차세대 반도체 소자에 적용될 수 있는 저유전물질 개발현황과 이들 물질 중 4GDRAM 급이상의 소자에 적용가능성이 가장 높은 유무기 hybrid nanofoam, a-C:F와 C:F-SiO2 박막에 대한 특성에 대하여 소개하고자 한다.

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Characterization of Microwave Active Circuits using the FDTD Method (FDTD를 이용한 마이크로파 능동 회로의 해석)

  • 황윤재;육종관;박한규
    • The Journal of Korean Institute of Electromagnetic Engineering and Science
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    • v.13 no.6
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    • pp.528-537
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    • 2002
  • In this paper, the extended FDTD is used for the analysis of microwave circuits including active elements. Lumped elements such as R, L, C which are inserted into a microstrip line are analyzed with the FDTD lumped element modeling. Parasitic capacitance and inductance could be obtained using network modeling and so it is sure that FDTD lumped element modeling makes it possible to get more accurate data which include parasite components. Moreover, a balanced mixer using two diodes that are modeled by an extended FDTD is designed and the more exact characteristic of the mixer is acquired than in current circuit simulator.

Analysis of effect of parasitic schottky diode on sense amplifier in DDI DRAM (DDI DRAM의 감지 증폭기에서 기생 쇼트키 다이오드 영향 분석)

  • Chang, Sung-Keun;Kim, Youn-Jang
    • Journal of the Korea Academia-Industrial cooperation Society
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    • v.11 no.2
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    • pp.485-490
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    • 2010
  • We propose the equivalent circuit model including all parasitic components in input gate of sense amplifier of DDI DRAM with butting contact structure. We analysed the effect of parasitic schottky diode by using the proposed model in the operation of sense amplifier. The cause of single side fail and the temperature dependence of fail rate in DDI DRAM are due to creation of the parasitic schottky diode in input gate of sense amplifier. The parasitic schottky diode cause the voltage drop in input gate, and result in decreasing noise margin of sense amplifier. therefore single side fail rate increase.

A MOSFET Pushpull Circuit which Prevents the Output Circuit from Oscillation Causing Reverse Recovery Current of MOSFET and Parastic Components (역회복전류와 기생소자들에 의한 발진 방지용 MOSFET 푸쉬풀 회로)

  • Jeong, Jae-Hoon;Cho, Gyu-Hyeong;Ahn, Che-Hong
    • Proceedings of the KIEE Conference
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    • 1996.07b
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    • pp.1292-1294
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    • 1996
  • The general output circuit for PWM output is pushpull using a complimentary MOSFET. The gate driver coupled directly at gate can switch easy upto a high frequency. However, a high reverse recovery current and parastic components make a oscillation output. This paper analyses this phenomenon and proposes a novel output circuit preventing the oscillation.

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Design of the Wide-Band Printed-Monopole Antenna Using Parasitic Elements (기생 소자를 이용한 광대역 프린트 모노폴 안테나의 설계)

  • Seo, Seung-Up;Lee, Yun-Bok;Yang, Myo-Geun;Seong, Won-Mo
    • The Journal of Korean Institute of Electromagnetic Engineering and Science
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    • v.19 no.7
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    • pp.719-725
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    • 2008
  • In this paper, we have proposed a printed monopole antenna using parasitic elements. The broadband characteristics of the antenna is obtained by using the printed monopole and parasitic elements. To confirm the broadband characteristics of the antenna, of have designed and fabricated the proposed antenna. The return loss and radiation patterns are measured in the frequency range of$0.8{\sim}1.2\;GHz$. The measured results show that the proposed antenna has return loss less than -10 dB in the operating frequency band and the radiation pattern is the dipole-like patterns. The antenna gain varies from 1.7 to 4.6 dBi in the operating frequency band. Thus, the proposed antenna can be used for the broadband repeater antenna $0.806{\sim}0.960\;GHz$(TRS-800, CDMA and GSM-900).

Design and Evaluation of Higher Level Modulation in Beam Space MIMO Communication System (빔 공간 MIMO 통신시스템에서 고레벨 변조 설계와 평가)

  • Kim, Bong-Jun;Ryu, Heung-Gyoon
    • The Journal of Korean Institute of Communications and Information Sciences
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    • v.39A no.5
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    • pp.220-228
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    • 2014
  • ESPAR(Electronically Steerable Parasitic Array Radiator) antenna is the technique for overcoming the problems of space limitation and energy efficiency due to the multiple RF-chain. Conventional MIMO system with multiple antenna requires a large number of RF-chain for transmitting the multiple data because it transmits the data in proportion to the number of antenna. Beamspace MIMO system using the ESPAR antenna which has single RF-chain was proposed for solving the problems caused by using the multiple antenna and RF-chain. In this paper, therefore we propose 2x2 beamspace MIMO system using the 16, 64-QAM modulation and evaluate the performance of this system to reveal that it is possible that beamspace MIMO system can use not only PSK modulation but also QAM modulation. We confirm that QAM symbol can be generated by adjusting reactance of parasitic elements and making reactance set and also we confirm that performance of beamspace MIMO system is similar to the conventional MIMO system by transmitting the QAM symbol made by reactance set through the simulation.