• Journal of the Institute of Electronics Engineers of Korea TC
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• v.42 no.7 s.337
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• pp.41-48
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• 2005

We design and fabricate 3-dB tandem directional coupler using the coplanar waveguide structure which is applicable to balanced amplifiers and mixers for 60 GHz wireless local area network system. The coupler comprises the multiple-sectional parallel-coupled lines to facilitate the fabrication process, and enable smaller device size and higher directivity than those of the conventional 3-dB coupler employing the edge-coupled line. In this study, we adopt the structure of two-sectional parallel-coupled lines of which each single-coupled line has a coupling coefficient of -8.34 dB and airbridge structure to monolithically materialize the uniplanar coupler structure instead of using the conventional multilayer or bonded structure. The airbridge structure also supports to minimize the parasitic components and maintain desirable device performance in V-band (50$\~$75 GHz). The measured results from the fabricated couplers show couplings of 3.S$\~$4 dB and phase differences of 87.5$^{\circ}{\pm}1^{\circ}$ in V-band range and show directivities higher than 30 dB at a frequency of 60 GHz.

• The Journal of Korea Institute of Information, Electronics, and Communication Technology
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• v.13 no.1
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• pp.64-71
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• 2020

eFuse OTP memory IP is required to trim the analog circuit of the gate driving chip of the power semiconductor device. Conventional NMOS diode-type eFuse OTP memory cells have a small cell size, but require one more deep N-well (DNW) mask. In this paper, we propose a small PMOS-diode type eFuse OTP memory cell without the need for additional processing in the CMOS process. The proposed PMOS-diode type eFuse OTP memory cell is composed of a PMOS transistor formed in the N-WELL and an eFuse link, which is a memory element and uses a pn junction diode parasitic in the PMOS transistor. A core driving circuit for driving the array of PMOS diode-type eFuse memory cells is proposed, and the SPICE simulation results show that the proposed core circuit can be used to sense post-program resistance of 61㏀. The layout sizes of PMOS-diode type eFuse OTP memory cell and 512b eFuse OTP memory IP designed using 0.13㎛ BCD process are 3.475㎛ × 4.21㎛ (= 14.62975㎛2) and 119.315㎛ × 341.95㎛ (= 0.0408mm2), respectively. After testing at the wafer level, it was confirmed that it was normally programmed.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.11 no.5
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• pp.853-859
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• 2007

This paper presents a microstrip patch array antenna having transmission feed and reception feed for satellite communication in the Ku band. In this paper, the element of the patch array antenna is a three-stacked structure consisting of one radiation patch and two parasitic patches for high gain and wide bandwidth characteristics. To obtain higher gain, the unit elements are expanded into a $1{\times}8$ may using a mixture of series and parallel feeds. The proposed antenna has horizontal polarization for the Rx band and vertical polarization for the Tx band. To verify the practicality of this antenna, we fabricated a three-stacked patch array antenna and measured its performance. The gain of the array antenna in the Rx and Tx bands exceeds 17 and 18 dBi, respectively. The impedance bandwidth is over 10 % in both bands. The cross-polarization level is below -25 dB, and the sidelobe level is below -9.4 dB.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.29 no.6
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• pp.401-406
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• 2018

In this paper, we present E-band bond-wire modeling and a matching network to compensate for the effect of the bond-wire. The impedance of the bond-wires is extracted using three-dimensional electromagnetic simulation. The matching network was designed using a simple structure. The implemented matching network was verified with a commercial 71~81 GHz LNA IC and an interconnection based on the WR-12 waveguide. The matching network increases the transmission coefficient of the system by up to 4.5 dB, power gain by up to 3.12 dB, $P_{1dB}$ by up to 2.2 dB, and improves the gain flatness by ${\pm}1.07dB$.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2009.06a
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• pp.148-148
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• 2009

반도체 소자의 크기가 45 nm 이하로 감소함에 따라 최소 선폭에 따른 다층 배선 연결 구조가 요구되고 있다. 그러나 고집적화 구조는 기생 저항과 정전 용량에 의한 신호지연증가 및 혼선 전력 소모의 문제가 발생한다. 이런 문제를 해결하기 위한 방법 중의 하나는 저저항 배선연결물질과 층간 절연막으로 저유전 상수를 갖는 물질을 사용하는 것이다. 본 연구는 DEMS $(H-Si(CH_3)(OC_2H_5)_2)$ 전구체를 이용하여 저유전막을 증착할 때 사용되는 PECVD (plasma enhanced chemical vapor deposition) 장비를 국내 기술로 개발하고 개발된 장비로 저유전박막을 평가한 것에 관한 것이다. 본 연구에서 평가 및 박막 종확 시 사용한 장비는 MAHA hp 1 type ((주)아토)로서 양산용 PECVD 장비이다. 변수는 C-He의 유랑, 300 mm Si 웨이퍼와 shower head 사이의 거리, 증착 압력, 구동 전력이고, 증착된 저유전막의 두께, 두께의 균일성, 굴절률, 굴절률의 균일성를 평가하였다. 구동 전력이 500W 일 때, C-He의 유량과 진공의 크기를 감소시키면 박막의 두께가 감소하고 박막의 균일성은 증가하였다. C-He의 유량을 증가시키고 shower head 와 Si 웨이퍼 사이의 거리 및 구동 압력을 감소시키면 굴절률과 굴절률의 균일성이 모두 저하되었다. 구동 전력이 700W 일 때, 박막 두께의 경우, 구동 전력이 500W 일 때의 결과와 유사하지만, 박막의 균일성, 굴절률, 굴절률의 균일성은 모든 조건에서 저하되었다.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.20 no.2
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• pp.161-166
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• 2009

In this paper, we propose the internal mobile antenna for TDMB and KPCS. The proposed antenna is made of different dielectric substrate and it has small size ($45{\times}8{\times}8\;mm$, about 2.8 cc) for mobile device. TDMB antenna is designed spiral structure that makes maximum current for each cell and KPCS antenna is PIFA that is usually used for internal antenna. In order to compensate length of resonance TDMB antenna has a large inductor above 100 nH. In this case, the inductor isolate KPCS signal at TDMB by cutting high frequency. Also the antenna has good isolation because TDMB radiator is parasitic element in KPCS band. We simulated the antenna by using CST microwave studio and measured performance of the antenna in anechoic chamber Proposed antenna has $-6{\sim}-14\;dBi$ gain for TDMB and $-3.5{\sim}-5\;dBi$ gain for KPCS.

• Journal of the Institute of Electronics and Information Engineers
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• v.52 no.2
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• pp.106-111
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• 2015

Since most reference voltage generator circuits have bi-stable characteristics, it is important to employ a proper start-up circuit to operate a reference generator in the desired state. In this paper, we propose a start-up circuit for a low voltage reference generator. This start-up circuit determines the state of the circuit reliably by measuring the current drawn by BJTs in the circuit, which is well-defined in the desired state. To measure the current using CMOS-compatible devices only, a comparator with an internal offset voltage is used. The reliability of the proposed circuit is confirmed by Monte-Carlo simulations of the start-up operation, which show that, with the proposed start-up circuit, the low voltage reference generator starts reliably with supply voltages over 850mV even in the presence of device mismatches.

• The Journal of the Institute of Internet, Broadcasting and Communication
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• v.15 no.5
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• pp.201-206
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• 2015

A new electronically stopband tunable filter is proposed with three-input single-output using Operational Transconductance Amplifier (OTA) in this paper. The proposed filter provides band pass, low pass and high pass multifunctional responses. Centre frequency ($f_c$) and quality factor (Q) of the realized filters could independently tuned without disturbing each other. Various network sensitivity and non-ideal characteristic analysis are done to check the sensitivity and parasitic effect of different circuit parameters. The CMOS realization of filter is done with 1.8V-0.18um process parameters and HSPICE simulation results are presented to assert the presented theory.

• The Journal of Korean Institute of Communications and Information Sciences
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• v.11 no.3
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• pp.172-178
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• 1986

The recent interest in the design of filters is motivatied by the fact that such filter can be fully integrated using standard metal-oxide-semiconductor processing technology. This is due to replacing all the resistors in the active RC filter network by the switched capacitors. The voltage gain of a SC filter depends only on the rations of capacitance and these ratios can be obtained and maintained to high accuracy. Therefore, it is known that a switched capacitor is much better than a resistor in temperature and linearity characteristics. This paper proposed a programmable SC filter and proved the fact that ${omega}_0$ Q and G of this circuit can be controlled by digital signal. Experiments show that SC filter remains the low sensitivities but it can't avoid little influence of parasitic capacitance. As the transfer characteristic of the SC filter is varied with sampling frequency and resistor array, SC filtering technigue can be applied for digital processing, speech analysis and synthesis and so on.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.22 no.5
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• pp.568-575
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• 2011

In this paper, we propose a small broadband antenna for mobile device. The proposed antenna consists of a printed rectangular monopole antenna and a parastic element connected to ground using narrow meander line and it is designed on a FR-4 substrate that has a thickness of 0.8 mm and a dielectric constant of 4.4. The FR-4 substrate's size is 50 mm${\times}$90 mm comparable to the real mobile device. The fabricated antenna's size is 12.5 mm${\times}$10.5 mm${\times}$0.8 mm and the measurement shows -10 dB return loss bandwidth of 2,200~6,000 MHz and gains of 2.86~4.01 dBi. Accordingly, the proposed antenna can support mobile device for WiBro(2,300~2,380 MHz), WLAN(IEEE 802.11b/g/n: 2,400~2,480 MHz, IEEE 802.11a: 5,150~5,825 MHz), and mobile WiMAX(IEEE 802.16e : 2,500~2,690 MHz, 3,400~3,600 MHz) service bands.