• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.28 no.12
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• pp.964-973
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• 2017

In this paper, we analyze the effects of parasitic components of common-mode choke on the common mode and differential mode in a wide band, and we propose a simple method for high-frequency modeling. Common mode and differential mode 2-port networks were configured and the S-parameters in each mode were measured using a network analyzer. Equivalent circuit elements were extracted from the measured results to model a high-frequency equivalent circuit, and the validity was verified by comparing the measured S-parameters with the simulation results.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.41 no.12
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• pp.21-26
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• 2004

In this paper, a direct method is developed to extact RF equivalent circuit of a packaged BJT without optimization. First, parasitic components of plastic package are removed from measured S-parameters using open and short package patterns. Using package do-embedded S-parameters, a direct and simple method is proposed to extract bonding wire inductance and chip pad capacitance between package lead and chip pad. The small-signal model parameters of internal BJT are next determined by Z and Y-parameter formula derived from RF equivalent circuit. The modeled S-parameters of packaged BJT agree well with measured ones, verifying the accuracy of this new extraction method.

• Journal of the Korean Institute of Telematics and Electronics
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• v.8 no.5
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• pp.10-19
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• 1971

Problems and technologies involved in integrating an audio preamplifier in terms of thick film technology has been discussed in detail. In particular, an attempt has been made to find methods for functional trimming of the amplifer by employing computer analysis. Among seven resistors integrated on a alumina substrate, only one resistor was found to be very sensitive to over all performance of the preamplifier. By trimming this resistor to its freguency charcteristic reguirements, it was possible to cut down trimming labor by one seventh. Besides, problems concerning resistor conductor contacts, crossover parasitic capacitance and the relations between noise per(ormance and trimming method are discussed in detail.

• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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• 2002.11a
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• pp.469-472
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• 2002

We made ESD tester to measure ESD threshold voltage of semiconductor devices. The HBM ESD test is the most popular method to measure the ESD threshold voltage of MMIC. We use flyback method which is one of the DC-DC converter to get high ESD voltage. With flyback method, we can isolate the low voltage part from the high voltage part of HBM ESD tester. We use an air gap of the relay which is used for switch to satisfy the rise time of ESD standard(MIL-STll-883D). As a result, with the flyback method and the air gap of relay, we can make ESD tester whose parasitic components are minimized.

• Proceedings of the KIPE Conference
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• 2013.07a
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• pp.165-166
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• 2013

기존의 위상천이 풀 브리지 DC/DC 컨버터의 경우 변압기의 누설 인덕턴스와 정류 스위치의 기생 출력 캐패시턴스 사이의 공진으로 인하여 정류 스위치에 스파이크 전압이 발생하며, 이는 시스템의 전력 변환 효율을 감소시킨다. 최근에 보조 DC/DC 컨버터를 사용하여 클램핑 캐패시터에서 흡수된 에너지를 부하로 회기시키는 방법이 연구되고 있으나, 보조 DC/DC 컨버터를 설계하기 위한 정확한 분석은 제시되지 않았다. 따라서, 본 논문에서는 2차 측 정류기의 공진 전압을 저감할 수 있는 비동기식 능동형 스너버 회로의 설계방법을 제안한다. 또한, 초기 기동 시에 발생되는 큰 공진에너지를 히스테리시스 회로를 이용하여 저항을 통해 소모시킴으로써 보조 DC/DC 컨버터의 자성소자를 최소화할 수 있다. 본 논문에서는 제안된 방식의 타당성을 검증하기 위하여 이론적으로 분석하며, 450W급 시작품을 제작하여 제안방식의 타당성을 검증하였다.

• Proceedings of the KIPE Conference
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• 2017.07a
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• pp.28-29
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• 2017

기존의 위상천이 풀 브리지 DC/DC 컨버터의 경우 변압기의 누설 인덕턴스와 2차 측 정류 다이오드의 기생 출력 커패시턴스 사이의 공진으로 인하여 정류 다이오드 양단에 큰 공진 전압이 발생하며, 이는 소자의 신뢰성 저하 및 시스템의 전력 변환 효율을 감소시킨다. 반면 LLC 공진형 컨버터는 2차 측에서 발생되는 공진 에너지가 출력 커패시터로 흡수되지만 경 부하시에 높은 스위칭 주파수로 인하여 효율이 저감되며, 출력 전압을 제어하기 위해 추가적인 부하저항이 요구된다. 따라서 최근에는 LLC 공진형 컨버터로 동작시키면서도 PWM 제어를 통해 출력전압을 제어하는 방법이 연구되고 있으나, 새로운 게이트 구동 방식을 위해 DSP 제어를 사용하고 있다. 따라서 본 논문에서는 산업에서 많이 사용되고 있는 아날로그 IC를 통해 동일한 동작 및 성능을 구현시킬 수 있는 방법에 대하여 제안한다. 본 논문에서는 제안된 방식의 타당성을 검증하기 위하여 이론적으로 분석하며, 6.6kW급 시작품을 제작하여 제안방식의 타당성을 검증하였다.

• The Transactions of the Korean Institute of Power Electronics
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• v.12 no.1
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• pp.50-55
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• 2007

In this paper, we present an analytical method that provides fast and efficient evaluation of the conversion efficiency for Two transistor forward (TTF) DC-DC converter In the proposed method, the conduction losses are evaluated by calculating the effective values of the ideal current waveform first and incorporating them into an exact equivalent circuit model of the TTF converter that includes all the parasitic resistances of the circuit components. While the conduction losses are accurately accounted for the diode rectification, the core losses are assumed to be negligible in order to simplify the analysis. The validity and accuracy of the proposed method are verified with experiments on a prototype TTF converter An excellent correlation between the experiments and theories are obtained for the input voltages of 390V, output voltage 12V and maximum power 480W.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.8 no.1
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• pp.13-21
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• 1997

In this paper, the oscillator type active antenna used as an element of active phased array antenna is designed and fabricated using slot coupling. The radiating element and active circuit are fabricated on each layer respectively and coupled electromagnetically through slot on the ground plane. This structure can solve the problems such as narrow bandwidth of microstrip antenna, spurious radiation by active circuits, and spaces for integration of the feeding circuits which are caused by integrating antennas with oscillator circuits in the same layer. The active antenna in this paper, the oscillation frequency can be tuned linearly by controlling the drain bias voltage of FET. The frequency tuning range is between 12.37 GHz to 12.65 GHz when bias voltage is varied from 3V to 9V, thus frequency tuning bandwidth is 280 MHz (2.24%). The output power of antenna is uniform within 5dB over frequency tuning range. Therefore this active antenna can be used as an element of linear or planar active phased array antennas.

• Journal of the Korea Academia-Industrial cooperation Society
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• v.17 no.11
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• pp.635-639
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• 2016

In the devices used in the microwave frequency band, the gain decreases as the frequency increases due to the parasitic component. To compensate for these characteristics, a linear gain equalizer with an opposite slope is needed in wideband systems, such as those used for electronic warfare. In this study, a linear gain equalizer that can be used in the 18 ~ 40GHz band is designed and fabricated. Circuit design and momentum design (optimizations) were carried out to reduce the errors between design and manufacturing. A thin film process is used to minimize the parasitic components within the implementation frequency band. A sheet resistance of 100 ohm/square was employed to minimize the wavelength variation due to the length of the thin film resistor. This linear gain equalizer is a structure that combines a quarter wavelength-resonator on a series microstrip line with a resistor. All three 1/4 wavelength short resonators were used. The fabricated linear gain equalizer has a loss of more than -5dB at 40GHz and a 6dB slope in the 18 ~ 40GHz band. By using the manufactured gain equalizer in a multi-stage connected device such as an electronic warfare receiver, the gain flatness degradation with increasing frequency can be reduced.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.20 no.2
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• pp.306-316
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• 2016

In this paper, an NMOS-diode eFuse OTP (One-Time Programmable) memory cell is proposed using a parasitic junction diode formed between a PW (P-Well), a body of an isolated NMOS (N-channel MOSFET) transistor with the small channel width, and an n+ diffusion, a source node, in a DNW (Deep N-Well) instead of an NMOS transistor with the big channel width as a program select device. Blowing of the proposed cell is done through the parasitic junction formed in the NMOS transistor in the program mode. Sensing failures of '0' data are removed because of removed contact voltage drop of a diode since a NMOS transistor is used instead of the junction diode in the read mode. In addition, a problem of being blown for a non-blown eFuse from a read current through the corresponding eFuse OTP cell is solved by limiting the read current to less than $100{\mu}A$ since a voltage is transferred to BL by using an NMOS transistor with the small channel width in the read mode.