• Tribology and Lubricants
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• v.28 no.1
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• pp.7-11
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• 2012

In this paper, the results of finite element(FE) analysis of chemical mechanical polishing(CMP) process using 2-dimensional elements were discussed. The objective of this study is to find the generation mechanism of microscratches on a wafer surface during the process. Especially, a FE model with a particle inside pad pore was considered to observe how such a contact situation could contribute to microscratch generation. The results of the finite element simulations revealed that during CMP process the pad-particle mixture could be formed and this would be a major factor leading to microscratch generation.

• Transactions of the Korean Society of Mechanical Engineers A
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• v.28 no.1
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• pp.85-91
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• 2004

The sapphire wafers for blue light emitting devices were manufactured by the implementation of the surface machining technology based on micro-tribology. This process has been performed by chemical and mechanical polishing process. The sapphire crystalline wafers were characterized by double crystal X-ray diffraction. The sample quality of sapphire crystalline wafer at surfaces has a full width at half maximum of 89 arcsec. The surfaces of sapphire wafer were mechanically affected by residual stress during the polishing process. The wave pattern of optical interference of sapphire wafer implies higher abrasion rate in the edge of the wafer than its center from the Newton's ring.

• Applied Chemistry for Engineering
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• v.22 no.6
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• pp.631-635
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• 2011

Spherical and non-spherical silica particles prepared by the direct oxidation were studied for the effect of the particle size and shape of these particles on oxide CMP removal rate. Spherical silica particles, which have 10~100 nm in size, were prepared by the direct oxidation process from silicon in the presence of alkali catalyst. The 10 nm silica particles were aggregated by addition of an acid, an alcohol, or a silane as an aggregation inducer between the particles. Two or more aggregated silica particles were used as a seed to grow non spherical silica particles in the direct oxidation process of silicon in the presence of alkali catalyst. The oxide removal rate of spherical silica particles increased with increasing an average particle size for spherical silica abrasives in the oxide CMP. It further increased non-spherical particles, compared with the spherical particles in the similar average particle size.

• The Transactions of the Korean Institute of Electrical Engineers C
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• v.52 no.10
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• pp.441-446
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• 2003

The chemical mechanical polishing (CMP) process is now widely employed in the ultra large scale integrated (ULSI) semiconductor fabrication. Especially, shallow trench isolation (STI) has become a key isolation scheme for sub-0.13/0.10${\mu}{\textrm}{m}$ CMOS technology. The most important issues of STI-CMP is to decrease the various defects such as nitride residue, dishing, and tom oxide. To solve these problems, in this paper, we studied the planarization characteristics using slurry additive with the high selectivity between $SiO_2$ and $Si_3$$N_4$ films for the purpose of process simplification and in-situ end point detection. As our experimental results, it was possible to achieve a global planarization and STI-CMP process could be dramatically simplified. Also, we estimated the reliability through the repeated tests with the optimized process conditions in order to identify the reproducibility of STI-CMP process.

• The korean journal of orthodontics
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• v.29 no.4 s.75
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• pp.483-490
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• 1999

Interdental enamel stripping is an usual method for correction of abnormal tooth shape and tooth size discrepancy which is one of the etiologic factors of malocclusion. Clinically it Is useful to correct the minor crowding in anterior teeth and posterior occlusion during finishing stage of orthodontic treatment. But this procedure has risks such as irreversible tooth reduction and remaining roughness of enamel surface can accumulate plaque which can evoke periodontal problem. Even if various methods were introduced to minimize the enamel surface roughness, their evaluation was limited in morphologic differences by scanning electronic microscope(SEM). The purpose of this study was to compare the various interdental enamel stripping method by SEM and to quantify the difference of surface roughness by use of Surfcorder SEF-30D(Kosaka Lab. Ltd.) which can measure the roughness of surface. The stripping methods were divided into mechanical and mechanical-chemical method. Air-rotor stripping and separating strip were used for mechanical stripping and $37\%$ phosphoric acid was used for chemical stripping. The enamel surface roughness after mechanical or mechanical-chemical stripping of interproximal surfaces of premolars which were extracted for orthodontic purpose were measured and compared by means of SEM and $Surfcorder^{\circledR}$, the results were as follows. 1. Enamel surface of primary treated by coarse diamond bur and separating strip groups showed highest value of roughness. 2. To compare the primary treated groups between mechanical and mechanical-chemical method, the latter group showed lower value of roughness remarkably. 3. Mechanical stripping groups which were treated both coarse and fine instrument showed lower value of roughness as much as non treated group. 4. The use of Pumice for final polishing did not show significantly smoothening the stripped enamel surface any more.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.15 no.10
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• pp.838-843
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• 2002

Chemical mechanical polishing(CMP) process has been widely used to planarize dielectric layers, which can be applied to the integrated circuits for deep sub-micron technology. The reverse moat etch process has been used for the shallow trench isolation(STI)-chemical mechanical polishing(CMP) process with conventional low selectivity slurries. Thus, the process became more complex, and the defects were seriously increased. In this paper, we studied the direct STI-CMP process without reverse moat etch step using high selectivity slurry(HSS). As our experimental results show, it was possible to achieve a global planarization without the complicated reverse moat process, the STI-CMP process could be dramatically simplified, and the defect level was reduced. Therefore the throughput, yield, and stability in the ULSI semiconductor device fabrication could be greatly improved.

• Tribology and Lubricants
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• v.34 no.6
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• pp.279-283
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• 2018

In this study, we investigate the behavior of abrasive particles and change of the stick-slip pattern according to chemical mechanical polishing (CMP) process parameters when a large number of abrasive particles are fixed on a pad. The CMP process is simulated using the finite element method. In the simulation, the abrasive grains are composed of those used in the actual CMP process. Considering the cohesion of the abrasive grains with the start of the CMP process, abrasive particles with various sizes are fixed onto the pad at different intervals so that stick-slip could occur. In this analysis, we determine that when the abrasive particle size is relatively large, the stick-slip period does not change as the pressure increases while the moving speed is constant. However, if the size of the abrasive grains is relatively small, the amount of deformation of the grains increases due to the elasticity of the pad. Therefore, the stick-slip pattern may not be observed. As the number of abrasive particles increases, the stick-slip period and displacement decrease. This is consistent with the decrease in the von Mises yield stress value on the surface of the wafer as the number of abrasive grains increases. We determine that when the number of the abrasive grains increases, the polishing rate, and characteristics are improved, and scratches are reduced. Moreover, we establish that the period of stick-slip increases and the change of the stick-slip size was not large when the abrasive particle size was relatively small.