• Journal of the Microelectronics and Packaging Society
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• v.7 no.2
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• pp.13-19
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• 2000

Shear strengths of BGA solder joints on Cu pads were studied for Cu-containing Sn (0, 1.5, and 2.5 wt.% Cu) and Sn-40Pb (0 and 0.5wt.% Cu) solders, with emphasis on the roles of the Cu-Sn intermetallic layer thickness and the roughness of the interface between the intermetalic layer and solder. The shear strength test was performed for as-soldered solder joints with various soldering reaction times up to 4 min. The addition of Cu to the pure Sn solder results in an enhanced growth of the intermetallic layer whereas the effect of Cu addition to the Sn-40Pb solder is primarily on the reduction of the roughness of the intermetallic/solder interface. The critical thickness of the intermetallic layer for a maximum shear strength depends on the solder materials, which was measured to be ~ 2.3 $\mu\textrm{m}$ for Sn-Cu solders and ~ 1.2 $\mu\textrm{m}$ for Sn-Pb-Cu solders. The shear strength at the critical intermetallic layer thickness seems to increase as the intermetallic/solder interface becomes rougher. This is in accordance with the observation that the sheared fracture occurred initially within the solder tends to shift towards the intermetallic/solder interface as the intermetallic layer grows above the critical thickness.

• Proceedings of the Korean Reliability Society Conference
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• 2000.04a
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• pp.97-103
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• 2000

전자 산업의 발달에 따라 전자 패키지에서 소자의 소형화 및 고집적화가 가속화되고 그로 인해 interconnection 부분의 신뢰성 평가의 중요성이 나날이 증가되고 있다. 특히 이러한 interconnection 부분 중 솔더 접합부는 사용중 솔더와 UBM(Under Bump Metallurgy) 층 사이에 금속간화합물이 생성되어 접합 강도가 저하되는 것이 큰 문제로 지적되고 있다. 본 연구에서는 공정 Sn-Ag 솔더 접합부에 대해 열시효 시간에 따라 접합 강도를 측정하고 파괴 기구 및 파괴 경로의 분석을 통해 접합 강도 변화와의 연관성을 도출하고자 하였다. 그 결과 열시효 초기에는 미세 조직의 조대화 및 불균일 조대 성장이 가속화되면서 응력 및 변형 집중으로 인해 솔더 내부에서 연성 파괴가 일어나 급격한 접합 강도의 저하가 발생하였으나 금속간 화합물이 생성, 성장함에 따라 금속간 화합물 내부에서의 취성 파괴가 나타나면서 접합 강도 저하가 포화되는 경향을 보였다.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2007.11a
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• pp.161-161
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• 2007

금속 게이트 전극으로 활용하기 위해서 두 가지의 금속박막으로 구성된 이중 금속층을 D.C. Magnetron sputtering 방식으로 증착하여 MOSCAP을 제작하였다. 박막의 적층 구조 및 열처리에 따른 계면반응을 AES, XPS를 통해 분석하였고, XRD 측정을 통해 결정상을 분석하였다. 또한 박막의 두께 및 열처리에 따른 전기적 특성과 workfunction 변화를 관찰하기 위해 I-V, C-V 분석을 진행하였다. 열처리 전후의 이중 금속층의 workfunction은 두 금속층의 확산의 정도에 따라서 열처리 전에는 하위금속층의 workfunction에서 열처리 후에는 상위금속층의 workfunction 값과의 중간값으로 변화하였다. 또한 열처리에 따라 두 금속층 중간에 새로운 금속간 화합물이 형성될 경우 이중 금속층의 workfunction은 새로운 금속간 화합물의 workfuction 값을 나타내었다.

• Journal of the Microelectronics and Packaging Society
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• v.12 no.1 s.34
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• pp.41-46
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• 2005

A systematic investigation of shear testing was conducted to find a relationship between Ni-Sn intermetallic spatting and the brittle fracture observed in electroless Ni(P)/solder interconnection. Brittle fracture was found in the solder joints made of Sn-3.5Ag, while only ductile fracture was observed in a Cu-containing solder (Sn-3.0Ag-0.5Cu). For Sn-3.0Ag-0.5Cu joints, $(Ni,Cu)_3Sn_4$ and/or $(Cu,Ni)_6Sn_5$ compound were formed at the interface without spatting from the Ni(P) film. For Sn-3.5Ag, $Ni_3Sn_4$ compound was formed and brittle fracture occurred in solder pads where $Ni_3Sn_4$ had spalled. From the analysis of fractured surfaces, it was found that the brittle fracture occurs through the $Ni_3SnP$ layer formed between $Ni_3Sn_4$ intermetallic layer and the Ni(P) film. Since the $Ni_3SnP$ layer is getting thicker during/ after $Ni_3Sn_4$ spatting, suppression of $Ni_3Sn_4$ spatting is crucial to ensure the reliability of Ni(P)/solder system.

• Journal of the Microelectronics and Packaging Society
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• v.9 no.2
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• pp.1-9
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• 2002

The intermetallic formation between Sn-Ag-(Cu) solders and metal pads in a real BGA package was characterized using SEM, EDS, and XRD. The intermetallic phase formed in the interface between Sn-Ag-Cu and Au/Ni/Cu pad is likely to be ternary compound of $(Cu,Ni)_6Sn_5$ from EDS analysis High concentration of Cu was observed in the solder/Ni interface. XRD analysis confirmed that $\eta -Cu_6 Sn_5$ type was intermetallic phase formed in the interface between Cu containing solders and Ni substrates and $Ni_3$Sn_4$ intermetallic was formed in the Sn-Ag solder/Ni interface. The thickness of intermetallic phase increased with the reflow times and Cu concentration in solder.

• Composites Research
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• v.16 no.3
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• pp.68-74
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• 2003

In this paper, intermetallic/metal laminated composites have been successfully produced that utilizes SHS reactions between Ni and Al elemental metal foils. The reaction between Ni and Al started from the nucleation and growth of NiA1$_3$ and was followed by the diffusional growth of Ni$_2$A1$_3$ between Ni and NiA1$_3$. The SHS reaction was thermodynamically analyzed through the final volume fraction of the non-reacted Al related with the initial thickness ratio of Ni:Al and prior heat treatment. Thermally aging these 1aminates resulted in formation of a functionally gradient series of intermetallic phases. Microstructure showed that the intermetallic volume percent was 82, 59.5, 40% in the 1:1, 2:1, 4:1 thickness ratio specimen. Main phases of the intermetallic were NiAl and Ni$_3$Al having higher strength at room and high temperatures.

• Korean Journal of Materials Research
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• v.11 no.5
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• pp.345-353
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• 2001

The present study was carried out to investigate the effect of zirconium addition to $Al_3$Nb intermetallic on the crystal structural modification and microstructural characterization of $Al_3$Nb intermetallic. Elemental Al, Nb, Zr powders and arc melted $Al_3$Nb and $Al_3$Zr intermetallic mixed powders were used as starting materials. MA was carried out in an attritor rotated with 300 rpm for 20 hours. The behavior of MA between two starting materials was some-what different in which the value of internal strain of the elemental powders was higher than that of the intermetallic powder. The intermetallic powder was much more disintegrated during the MA processing. In the case of the elemental powders, AlNb$_2$ phase were transformed to Al(Nb.Zr)$_2$ as a result of ternary addition of Zr element. With the successive heat treatment at 873K for 2 hours, the Al(Nb.Zr)$_2$ phase was transformed to more stable $Al_3$(Nb.Zr) phase. This transformation was clearly confirmed by the identification of X-ray peak position shift. On the other hand, in the carte of the intermetallic powder, there was no evidence of phase transformation to other ternary intermetallic compounds or amorphous phases, even in the case of additional heat treatment. However, nano-sized intermetallic with $Al_3$Nb and $Al_3$Zr were just well distributed instead of phase transformation.

• Journal of Biomedical Engineering Research
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• v.21 no.6
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• pp.537-542
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• 2000

Ga이 함유된 Pd-Ga계 합금은 우수한 기계적 성질, 심미성 및 생체적합성등으로 차세대 치과 도재용 합금으로 주목 받고 있다. 본 연구에서는 상용 77.3%Pd-6.0%Ga계 합금을 원심주조법으로 주조하고, 탈개스, 세라믹소성처리한 후 미세조직을 광학현미경, X-선 회절기, 투과전자현미경으로 관찰하였다. X-선 회절분석 및 투과전자현미경 관찰 결과, Pd고용체와 미세한 석출물에 의해 나타나는 줄무늬를 확인하였다. 공정점 86$0^{\circ}C$에서 5시간 유지시킨 상평형 열처리조건에서는 Pd고용체와 금속간화합물 Pd(sub)2Ga에 해당하는 보다 명확한 제한시야회절도형을 얻었다. 이러한 결과로 77.3%Pd-6.0%Ga계 합금은 Pd고용체와 미세한 구형의 금속간화합물 Pd(sub2)Ga으로 구성되었음을 알 수 있었다.

• Journal of the Microelectronics and Packaging Society
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• v.14 no.3
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• pp.43-49
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• 2007

Thickness of intermetallic compounds and consumption rates of under bump metallurgies (UBMs) were investigated in wafer-level solder bumping with variations of UBM materials and reflow times. In the case of Cu UBM, $0.6\;{\mu}m-thick$ intermetallic compound layer was formed before reflow of Sn solder, and the average thickness of the intermetallic compound layer increased to $4\;{\mu}m$ by reflowing at $250^{\circ}C$ for 450 sec. On the contrary, the intermetallic layer had a thickness of $0.2\;{\mu}m$ on Ni UBM before reflow and it grew to $1.7\;{\mu}m$ thickness with reflowing for 450 sec. While the consumption rates of Cu UBM were 100nm/sec fur 15-sec reflow and 4.50-sec for 450-sec reflow, those of Ni UBM decreased to 28.7 nm/sec for 15-sec reflow and 1.82 nm/sec for 450-sec reflow.

• Journal of the Microelectronics and Packaging Society
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• v.19 no.2
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• pp.35-39
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• 2012

We studied interfacial reaction and bonding characteristics of a flip chip bonding with the viewpoint of formation behavior of intermetallic compounds. For this purpose, Sn-0.7Cu and Sn-3Cu solders were reflowed on the Al/Cu and Al/Ni UBMs. When Sn-0.7Cu was reflowed on the Al/Cu UBM, no intermetallic compounds were formed at the solder/UBM interface. The $Cu_6Sn_5$ intermetallic compounds formed by reflowing Sn-3Cu solder on the Al/Cu UBM were spalled from the interface, resulting in delamination of the solder/UBM interface. On the other hand, the $(Cu,Ni)_6Sn_5$ intermetallic compounds were formed by reflowing of Sn-0.7Cu and Sn-3Cu on the Al/Ni UBM and the interfacial bonding between the Sn-Cu solders and the Al/Ni UBM was kept stable.