• Proceedings of the KWS Conference
• /
• 1990.04a
• /
• pp.73-75
• /
• 1990

• Information and Communications Magazine
• /
• v.8 no.7
• /
• pp.63-72
• /
• 1991

• Proceedings of the KWS Conference
• /
• 1994.10a
• /
• pp.35-37
• /
• 1994

• The Proceeding of the Korean Institute of Electromagnetic Engineering and Science
• /
• v.23 no.1
• /
• pp.21-36
• /
• 2012

• Proceedings of the Optical Society of Korea Conference
• /
• 1999.08a
• /
• pp.32-33
• /
• 1999

• Proceedings of the Korean Nuclear Society Conference
• /
• 2003.10a
• /
• pp.233.2-233.2
• /
• 2003

• Journal of the Institute of Electronics Engineers of Korea SD
• /
• v.46 no.4
• /
• pp.15-20
• /
• 2009

In a detection system based on laser light scattering, focusing an excitation laser beam into a focal point of a channel in a microfluidic chip is important for obtaining the highest excitation intensity, and consequently for obtaining a laser light scattering signal using a photodetector with a high efficiency. In this paper, we present a polydimethylsiloxane (PDMS) microfluidic chip consisting of an integrated PDMS microlens for cell detection based on laser light scattering. We fabricated PDMS microlens for optical detection system by simply putting down on PDMS chips. The PDMS microlens was fabricated by photoresist reflow and replica molding. This fabrication technique is simple and has an excellent property in terms of the microlens and a high-dimensional accuracy. The PDMS microlens integrated on the PDMS microfluidic chip has been verified to improve the laser intensity, and accordingly, the signal-to-noise ratio and sensitivity of laser light scattering detection for red blood cells(RBCs)

• Journal of the Korean Society for Aeronautical & Space Sciences
• /
• v.35 no.11
• /
• pp.1043-1051
• /
• 2007

The digital sun sensor calculates the incident sunlight angle using the sunlight image registered on a CMOS image sensor. In order to accomplish this, an exact center of the sunlight image has to be determined. Therefore, an accurate estimate of the centroid is the most important factor in digital sun sensor development. The most general method for determining the centroid is the thresholding method, and this method is also the simplest and easy to implement. Another centering algorithm often used is the image filtering method that utilizes image processing. The sun sensor accuracy using these methods, however, is quite susceptible to noise in the detected sunlight intensity. This is especially true in the thresholding method where the accuracy changes according to the threshold level. In this paper, a template method that uses the sunlight image model to determine the centroid of the sunlight image is suggested, and the performance has been compared and analyzed. The template method suggested, unlike the thresholding and image filtering method, has comparatively higher accuracy. In addition, it has the advantage of having consistent level of accuracy regardless of the noise level, which results in a higher reliability.

• Journal of Korean Society for Geospatial Information Science
• /
• v.18 no.2
• /
• pp.99-105
• /
• 2010

Photovoltaic system is the core one among the new and renewable energy of the low Carbon and green growth. Recently, the necessity developing PV is emerging since its of less green hose gas emissions. However, a survey or research on the PV system has been hardly performed. It's not easy to find a appropriate location in consideration of environment. These circumstances encourages a systematic approach for the PV system development. The purpose of this study is to propose a methodology of the location analysis for developing PV system. With this, constraint and location criteria with weights of Analytic Hierarchy Process are established and quantification method of each factor is presented. The location analysis of PV system using the GIS were generalized and the results of analysis for redundant topographic features were presented as 3 criteria of the suitability rank.

• Proceedings of the Materials Research Society of Korea Conference
• /
• 1994.11a
• /
• pp.98-98
• /
• 1994

최근 청색반도체레이저의 실현을 위하여 ZnSe가 대표하는 II-Ⅵ족 화합물반도체와 Gan가 대표하는 III족 질화물반도체분야에서 집중적인 연구가 이루어지고 있으며, 아직까지 실용화 되지 않고 있는 청색반도체레이저의 출현에 대하여 많은관심이 모아지고 있다. III족 질화물반도체는 InM(Eg:1.9eV)부터 AIN(Eg: 6.2eV)에 이르기까지 전 조성영역에서 완전한 고용체를 이루며, 실온에서 직접천이형 에너지 대구조를 가지므로 청색 혹은 자외영역에서 동작하는 발광소자를 제작하는데 있어 유망시 되고 있는 소재이다. 특히 GaN와 InN의 3원흔정인 GaInN를 활성층으로 이용하면 그 발전파장을 370nm부터 650nm까지 즉 가시 전 영역으로부터 근 자외영역을 포함할 수 있게 된다. 이 연구에서는 AIGaN/GaInN 이중이종접합(DH) 구조의 고아여기에 의한 유도방출고아의 편광 특성을 조사하였다. 유기금속기상에피텍셜(MOVPE)법으로 성장한 AIGaN/GaInN DH 구조의 표면에 수직으로 펄스 발진 질소레이저(파장: 337.1cm, 주기 10Hz, 폭: 8nsec) 빔을 조사하고 DH구조의 단면으로부터의 유도방출광을 편광기를 통과 시킨 후 스펙트럼을 측정하였다. 입사고아 밀도가 증가함에 따라 약 402nm의 파장에서 유도발출에 의한 가도가 큰 피크가 나타났고, 그 반치폭은 약 18meV이었다. 실온에서 AIGaN/GaInN DH 구조로 부터의 유도방출에 필요한 입사광밀도의 임계치는 약 130㎾/$\textrm{cm}^2$이었다. 한편 편광각이 90$^{\circ}$일때는 발광스펙트럼의 강도가 매우 낮고 단지 자연방출에 의한 스펙트럼만이 나타났다. 편광각이 0$^{\circ}$일 때 최대의 방출광 강도를 나타내었으며, 편광각이 -90$^{\circ}$로 회전함에 따라 발고아강도의 강도가 감소하였다. 이와 같은 결과는 광여기에 의하여 AIGaN/GaInN DH 로 부터의 유도방출광이 GaInN활성층의 단면에 평행한 전기장의방향으로, 즉 TE모드로 선형적으로 편광됨을 의미한다. AIGaN/GanN DH 로 부터의 유도방출이 선형적으로 TE모드로 편광되는 것은 이 구조를 이용한 청색 및 자외선 반도체 레이저다이오드의 실현에 매우 유익한 것이다.