• Korean Journal of Materials Research
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• v.6 no.2
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• pp.158-165
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• 1996

열증착기(thermal evaporator)로 증착시킨 Cu를 상온에서 3.5M CuCl2+0.5M HCI+0.5MKCI 용액을 사용하여 습식각하고 2일간 대기중 노출시킨 후 X-선 광전자 분광기를 이용하여 표면의 결합상태를 관찰하였다. 그 결과 습식식각된 Cu 표면에서는 C, O, Ci 및 Cu가 존재함을 알 수 있었다. 표면원소에 대한 오제이 전자 스펙트라(Auger electron spectra)와 광전자 스펙트라(photoelectron spectra)의 정량적인 비교를 통하여 표면의 모든 결합상태를 확인할 수 있었고 그 상대적인 양까지도 얻어낼 수 있었다. 식각된 Cu의 표면에는 Cu-Cu, 2Cu-O, Cu-Ci, Cu-2(OH), 및 Cu-2Cl의 결합상태가 존재함을 알 수 있었고, CuLMMAuger line spectrum의 관찰을 통하여 계산된 각 결합의 정량적인 비교를 검증할 수 있었다. 따라서 chemical shift가 거의 관찰되지 않아 결합상태 분리가 불가능한 식각된 구리표면의 정량적 결합상태는 각 결합상태의 상대적 비교를 통하여 얻어질 수 있음을 알 수 있었다.

• Proceedings of the Korean Vacuum Society Conference
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• 2012.08a
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• pp.403-403
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• 2012

그래핀(graphene)은 우수한 전기적, 물리적인 특성을 지닌 물질로써 다양한 분야에서 이를 활용하려는 노력들이 활발히 진행되고 있다. 그중 그래핀을 채널로 이용하는 전계효과 트랜지스터(field effect transistor)로의 응용에 있어, 가장 핵심적인 도전과제는 전하농도(carrier concentration)의 제어 및 에너지 밴드갭(energy bandgap) 형성이라 할수 있다. 최근 다양한 물질을 이용한 도핑을 통해 이를 해결하기 위한 노력들이 진행되고 있는 추세이다. 본 연구에서는 열화학 기상 증착법(Thermal chemical vapor deposition)을 통해 합성된 단일층의 그래핀에 염화니켈 나노입자의 분산액을 스핀코팅 한후 열처리를 통해 그래핀-니켈 나노입자의 하이브리드 구조를 제작하였다. 제작된 그래핀-니켈 나노입자 하이브리드 물질의 구조적 특징을 주사 전자 현미경(Scanning electron microscope)과 원자힘 현미경(Atomic force microscopy)을 통하여 확인하였다. 또한 니켈 분산액의 농도와 도핑효과 와의 상관관계를 라만분광법(Raman spectroscopy)과 이온성 용액법(Ionic liquid)을 이용한 전계효과 특성분석을 통해 조사하였다. 나노입자의 형성 메커니즘은 X-선 광전자 분광법(X-ray photoelectron spectroscopy)을 통하여 규명하였다.

• Electrical & Electronic Materials
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• v.8 no.3
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• pp.352-356
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• 1995

Native oxide layer on MCT (HgCdTe) has been grown uniformly in H$\_$2/O$\_$2/ electrolyte through anodic oxidation method. It has been determined that anodic oxidation of HgCdTe in H$\_$2/O$\_$2/ electrolyte proceeds immediately with the input of constant currents without any induction time required for anodic oxideation in KOH electrolyte. Oxide layer with the resistivity of 2*10$\^$10/.ohm.cm and the refractive index of 2.1 suggested the possibility of well matching combination layer with ZnS for MCT MIS device. XPS results indicated that the major components of oxide layer grown in H202 solution is TeO$\_$2/ with the possibility of small amounts of CdTeO$\_$3/.

• Journal of the Korean Vacuum Society
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• v.2 no.2
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• pp.171-180
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• 1993

X-ray photoelectron diffraction (XPD) is used to characterize the crystallographically cleaved GaAs(110) surface. By using polar and azimuthal scans of the usual angle-resolved x-ray photoelectron spectroscopy, we get the reconstruction geometry of the clean GaAs(110) surface from the intensity ratio of Ga 3d core-level peaks. The reconstruction parameters are determined by fitting the diffraction pattern with the single scattering cluster (SSC) model, and the results show similar tendencies to those obtained by other techniques.

• Proceedings of the Korean Vacuum Society Conference
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• 2011.08a
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• pp.181-181
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• 2011

The adsorption structure and the electronic property of azidotrimethyltin (ATMT) on monolayer graphene was investigated using scanning tunneling microscopy and core-level photoemission spectroscopy. We also confirmed the n-type doping effect by scanning tunneling spectroscopy and work function measurements. We will systematically demonstrate the variation of characteristic of graphene induced by the chemical functionalized molecule as we confirmed the results using scanning tunneling microscopy in conjunction with core-level photoemission spectroscopy.

• Journal of the Korean Vacuum Society
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• v.18 no.4
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• pp.281-287
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• 2009

Pd was deposited on magnesium-oxide-covered magnesium ribon substrate by metal thermal evaporation method in high vacuum. The electronic and chemical properties of Pd samples with different coverages were studied using in-situ X-ray Photoelctron Spectroscopy (XPS) and Field Emission Scanning Electron Microscopy (SEM). For relatively lower amounts of Pd deposited(< 1nm), separate Pd particles could be observed, whereas at higher Pd coverages, Pd thin films caused by agglomeration of Pd nanoparticles was found. The metal support interaction with Pd-support was observed. The Pd atoms on the metal oxide/metal interface were partially negative charged by charge transfer.

• Journal of the Korean Vacuum Society
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• v.21 no.5
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• pp.242-248
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• 2012

Valence band of a vacuum-reduced $TiO_2$ (001) surface has been carefully examined using synchrotron x-ray photoelectron spectroscopy to investigate variation of the gap state upon oxidation and thermal diffusion of $Ti^{3+}$ interstitials from the bulk. We compare our results with that obtained from $TiO_2$ (110) and aim to address a crystal-face dependency in the oxidation and diffusion rates of $Ti^{3+}$ interstitials. We find very similar behaviors in the oxidation and thermal diffusion rate of $Ti^{3+}$ interstitials between the two crystal faces suggesting a negligible crystal-face dependency in this case.

• Journal of the Korean Vacuum Society
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• v.2 no.2
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• pp.166-170
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• 1993

In the initial stages of oxidation of Si(111)-7${\times}$7 held at 40K through exposing molecular oxygen, it has been detected average work-function measured by ultraviolet photoelectron spectroscopy (UPS) is about 0.4eV higher than the local work-function of the modified area measured by photoemission for adsorbed Xenon (PAX). This result indicates that the increment of work-function at the initial oxidation stages of Si(111)-7${\times}$7 is mainly due to the moleculary adsorbed oxygen. From the shift of broadened Xe 5p and Xe 3d, it has also been estimated that the work-function of the modified area is 0.6eV higher than that of the clean area.

• Journal of the Korean Vacuum Society
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• v.16 no.5
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• pp.311-321
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• 2007

We have researched the chemical defects of NiO ultrathin films grown on Ag(001) by x-ray photoelectron spectroscopy. In particular, O 1s and Ni 2p spectra were analyzed consistently with control film thickness, $O_2\;and\;H_2O$ partial pressure and substrate temperature. As a result, we could identify each chemical defect. In addition, we suggest the optimum growth condition to minimize the defect density.

• Journal of the Korean Magnetics Society
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• v.26 no.6
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• pp.185-189
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• 2016

By employing photoemission spectroscopy (PES) and soft X-ray absorption spectroscopy (XAS), the electronic structure of the candidate half-metallic antiferromagnet of $Mn_3Ga$ Heusler compound has been investigated. We have studied two ball-milled $Mn_3Ga$ powder samples, one after annealing and the other without annealing, respectively. Based on the Mn 2p XAS study, we have found that Mn ions are nearly divalent in $Mn_3Ga$ and that the Mn ions having the locally octahedral symmetry and those having the locally tetrahedral symmetry are both present in $Mn_3Ga$. We have found relatively good agreement between the measured valence-band PES spectrum of $Mn_3Ga$ and the calculated density of states, which is in agreement with the half-metallic electronic structure of $Mn_3Ga$.