• Title/Summary/Keyword: 광전자 분광학

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Spin-Polarized Angle-Resolved Photoemission Spectroscopy Study of Magnetism (스핀편극 각도분해 광전자 분광학을 이용한 자성연구)

  • Kim, Hyeong-Do
    • Journal of the Korean Magnetics Society
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    • v.22 no.6
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    • pp.228-233
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    • 2012
  • Magnetic properties of a solid are determined by the quantum mechanical states of valence electrons. Spin-polarized angle-resolved photoemission spectroscopy (SP-ARPES) is a powerful tool to probe the electronic states in a solid and provides valuable information on magnetic properties of a solid. In this article, brief introduction to SP-ARPES and its applications are provided.

열처리 시간 변화에 따른 유기태양전지의 특성 변화

  • Choe, Cheol-Jun;Yang, Hui-Yeon;Kim, Tae-Hwan
    • Proceedings of the Korean Vacuum Society Conference
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    • 2013.02a
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    • pp.445-445
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    • 2013
  • 유기태양전지는 간단한 제조공정, 낮은 제조단가, 가벼운 무게 및 우수한 유연성의 장점을 가지고 있기 때문에 모바일 기기의 응용에 많은 관심을 가지고 있다. 그러나 이종접합 유기태양전지의 광전 변환효율이 낮기 때문에 유기태양전지를 상용화하기 위해서는 광전변환 효율을 높이기 위한 연구가 필요하다. 본 연구에서는 태양전지의 광전 변환효율을 증진하기 위하여 열처리 시간 변화에 따른 이종접합 유기 태양전지의 특성에 미치는 효과를 조사하였다. 전자 주게 물질인 P3HT와 전자 받게 물질인 PCBM 물질을 특정용매에 녹여 패턴화된 ITO를 코팅한 glass 기판 위에 스핀 코팅 방법을 이용하여 glass/ITO/PEDOT:PSS/P3HT:PCBM/Al 구조를 가진 이종접합 유기태양전지를 제작하였다. UV-Vis 분광학, X-선 광전자 분광학 및 원자힘 현미경 측정을 하여 제작한 소자의 광학적 및 구조적 특성을 분석하였다. 이종접합 유기태양전지의 우수한 광흡수율과 평탄한 표면을 가지는 최적화 조건을 열처리 시간에 따라 비교 분석하였다. 제작한 소자들을 열처리를 하지 않은 소자와 다양한 시간 동안 열처리를 한 소자의 특성을 비교하였다. 제작한 이종접합 태양전지의 전류-전압 측정 결과를 분석하여 최대의 광전 변환효율을 가지는 최적의 열처리 조건을 결정하였다. 열처리를 할 경우 열처리를 하지 않은 소자보다 광전 변환효율이 증가함을 알 수 있었다.

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Practical Guide to X-ray Spectroscopic Data Analysis (X선 기반 분광광도계를 통해 얻은 데이터 분석의 기초)

  • Cho, Jae-Hyeon;Jo, Wook
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.35 no.3
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    • pp.223-231
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    • 2022
  • Spectroscopies are the most widely used for understanding the crystallographic, chemical, and physical aspects of materials; therefore, numerous commercial and non-commercial software have been introduced to help researchers better handling their spectroscopic data. However, not many researchers, especially early-stage ones, have a proper background knowledge on the choice of fitting functions and a technique for actual fitting, although the essence of such data analysis is peak fitting. In this regard, we present a practical guide for peak fitting for data analysis. We start with a basic-level theoretical background why and how a certain protocol for peak fitting works, followed by a step-by-step visualized demonstration how an actual fitting is performed. We expect that this contribution is sure to help many active researchers in the discipline of materials science better handle their spectroscopic data.

Investigation on the Distribution of Native Oxide in GaAs Wafer Using Angle-resolved X-ray Photoelectron Spectroscopy (각분해 X-선 광전자 분광기를 이용한 GaAs 자연 산화막의 분포연구)

  • Sa, Seung-Hun;Gang, Min-Gu;Park, Hyeong-Ho;O, Gyeong-Hui;Seo, Gyeong-Su
    • Korean Journal of Materials Research
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    • v.7 no.6
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    • pp.484-491
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    • 1997
  • 본 연구에서는 비파괴적 분석 기법인 각분해 X-선 광전자 분광기(Angle-Resolved X-ray Photoelectron Spectros-copy)를 이용하여 GaAs 표면 자연 산화막의 깊이에 따른 화학적 결합 상태 및 조성 분석을 수행하였다. GaAs의 벽개면 및 Ar이온으로 식각된 면을 기준시료로 하여 각 원자의 광전자 강도(intensity)를 보정해주는 인자인 ASF(atomic sensitivity factor)의 최적값을 구하였다. 이륙각에 따라 발생되어지는 각 원소의 피이크 분해와 정확한 ASF의 보정을 통한 각 원소의 실험적인 결과를 이용하여 깊이 방향으로의 조성 분포 모델을 세웠으며, 이론적인 강도와의 상호비교로부터 표면 오염층의 구조는 표면으로부터 탄소층, Ga-oxide와 As-oxide로 이루어진 oxides층, As-As결합의 elemental As층 및 GaAs기판의 순으로 존재함을 알 수 있었다. 또한 GaAs 표면에 존재하는 오염층은 35.8$\pm$3.3 $\AA$이었다. 또한 위 결과로부터 분석깊이 영역에서 원자수의 비로써 정의되는 의미로서의 실질조성을 구하였는데 단지 특정 이륙각에 따라 일반적인 ASF로 보정된 표면조성 결과는 표면 상태를 명확히 표현해주지 못함을 확인할 수 있었다.

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Analysis of Core-level Spectra of the $Li/Ge(111)-3\times1$ Surface ($Li/Ge(111)-3\times1$ 표면의 Core-level 스펙트럼에 대한 분석 연구)

  • Cho, Hye-Jin;Kim, Yeong-Hoon;Lee, Geun-Seop
    • Journal of the Korean Vacuum Society
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    • v.15 no.1
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    • pp.31-36
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    • 2006
  • By analyzing the Ge 34 core-level photoelectron spectrum, we studied the structure of the $Li/Ge(111)-3\times1$ surface. Two surface related components tying on either side of the main bulk peak were identified in the Ge 3d spectrum. The existence and the position of the two surface components in the core-level spectrum from $Li/Ge(111)-3\times1$ is similar to those of the $Li/Ge(111)-3\times1$, suggesting the similarities in structure of the two surfaces. The core-level photoelectron spectra of the Li-induced $Li/Ge(111)-3\times1$ surface are well consistent with the honeycomb-chain-channel model, which was proposed as the structure of the $Si/Ge(111)-3\times1$ induced by alkali metals.

High-Resolution X-Ray Photoelectron Spectroscopy Study of a Sb2Te3 Thin Film with the Polycrystalline Phase (고해상도 엑스선 광전자 분광법을 이용한 다결정구조의 안티몬-테레니움 박막 연구)

  • Lee, Y.M.;Kim, K.;Shin, H.J.;Jung, M.C.;Qi, Y.
    • Journal of the Korean Vacuum Society
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    • v.21 no.6
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    • pp.348-353
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    • 2012
  • We investigated chemical states of a $Sb_2Te_3$ thin film with the polycrystalline phase by using high-resolution x-ray photoelectron spectroscopy with synchrotron radiation. The $Sb_2Te_3$ thin film was formed by sputtering. The rhombohedral phase was confirmed by x-ray diffraction. To remove the surface oxide, we performed $Ne^+$ ion sputtering for 1 hour with the beam energy of 1 kV and post-annealing at $100^{\circ}C$ for 5 min in ultra-high vacuum. We obtained the Te and Sb 4d core-levels spectra with the peaks at the binding energies of 40.4 and 33.0 eV, respectively. The full-width of half maximum of both the Te and Sb $4d_{5/2}$ core-levels is 0.9 eV. The Te and Sb core-levels only show a single chemical state, and we also confirmed the stoichiometry of approximately 2 : 3.

Growth and Energy Level Alignment of Pentacene on SiO2 Surfaces before and after OTS Treatment (OTS처리 전후 실리콘산화막 위에서 펜타신의 성장과 에너지준위의 정렬)

  • Kim, J.W.;Lee, Y.M.;Park, Y.
    • Journal of the Korean Vacuum Society
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    • v.17 no.5
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    • pp.394-399
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    • 2008
  • Growth and electronic structure of pentacene film on silicon oxide before and after octadecyltrichlorosilane (OTS) treatment have been studied by photoelectron spectroscopy and photoelectron emission microscopy. On the OTS-treated surface, due to the weak interaction between the substrate and pentacene, the diffusion of pentacene is enhanced and domain size gradually grows, leading to a gradual change of the HOMO offset position. On the bare silicon oxide, the change of the HOMO position is marginal because of relatively strong interaction between the substrate and pentacene from the beginning.

Oxygen Chemisorption on the Fe Ultrathin Films on Pt(111) Surface (Pt(111) 표면 위에 증착된 Fe 초박막의 산소 흡착에 관한 연구)

  • Park, K.H.;Cho, S.K.;Nahm, T.U.
    • Journal of the Korean Vacuum Society
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    • v.17 no.3
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    • pp.183-188
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    • 2008
  • We have studied the chemisorption of oxygen at room temperature on Fe layers deposited on Pt(111) substrates by using core-level X-ray photoelectron spectroscopy. It was found that the oxygen atoms are chemisorbed when the thickness of the Fe layers is not larger than 6 monolayers. Upon post-annealing, it was found that part of the chemisorbed atoms are desorbed at a temperature range 600 - 700 K, after which the intermixing between Fe and Pt atoms occurs. The overall trend of this intermixing was very similar to the Fe/Pt(111) surface without oxygen exposure. The remaining oxygen adatoms, the amount of which is about a half of the total, were found to be eventually desorbed from the surface upon post-annealing at 1000 K. The binding energy of this phase was higher than that of the oxygen atoms desorbed at lower temperatures by 1.3 eV.