• Journal of the Korea Institute of Information and Communication Engineering
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• v.7 no.8
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• pp.1816-1822
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• 2003

We propose a novel structure of wavelength selective optical add/drop filter comprising two tap couplers and a fiber Bragg grating. The device has unique features including a simpler structure and a lower cost implementation as compared with existing device for the same operation. The filter performance has been measured and analyzed, experimentally. The implemented prototype filter shows good performance with no­crosstalk power penalty in a 155Mbps per channel wavelength­division­multiplexing transmission system but suffers from a relatively high loss of 3.5㏈ and 21㏈ for transmitted and dropped channel, respectively. While the dropped channel extinction ratio was more than 15㏈, the transmitted channel extinction ratio was more than 26㏈.

• Korean Journal of Optics and Photonics
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• v.14 no.6
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• pp.578-582
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• 2003

We propose a novel structure of wavelength selective optical add/drop module comprising two tap couplers and a fiber Bragg grating. The device has unique features including a simpler structure and a lower cost of implementation as compared with existing devices for the same operation. The module performance has been measured and analyzed experimentally. The implemented prototype module shows good performance with no-crosstalk power penalty in a 155 Mbps per channel wavelength-division-multiplexing transmission system but suffers from a relatively high loss of 3.5 ㏈ and 21 ㏈ for transmitted and dropped channels, respectively. While the dropped channel extinction ratio was more than 25 ㏈, the transmitted channel extinction ratio was more than 35 ㏈.

• The Journal of Korean Institute of Communications and Information Sciences
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• v.29 no.12A
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• pp.1279-1284
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• 2004

In this paper, we propose a novel and simple optical technique for the detection of subcarrier-multiplexed(SCM) labels using optical interleavers. Optical-baseband packet signals with suppressed subcarriers appear at the through-pass port of the optical interleaver and SCM labels with suppressed optical carrier exit from the optical SCM extraction port. Since it does not require optical circulators, this structure shows less insertion loss than the previously proposed optical label detectors. The periodic nature of the interleaver transfer function makes it possible to detect multiple SCM channels simultaneously from an incoming wavelength-multiplexed signal stream. Detection of a 155-Mb/s ASK modulated 9.79-GHz subcarrier using a 10-GHz SCM optical label detector has been performed successfully and verified through optical spectra and bi t-error-rate measurements.

• Korean Journal of Optics and Photonics
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• v.15 no.3
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• pp.222-228
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• 2004

The variable optical attenuator based on side polished fiber technique was experimentally demonstrated. Various combination mixtures of poly(vinylidene fluoride) and poly(methyl methacrylate) have been used as the overlay waveguide materials for the variable optical attenuator application. A controllable amount of optical power can be extracted via evanescent coupling by changing the temperature of the polymer mixture, thereby changing its refractive index. The VOA under test provides a maximum attenuation of 30 ㏈ and an insertion loss of 0.1 ㏈.

• Korean Journal of Optics and Photonics
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• v.23 no.1
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• pp.23-31
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• 2012

In this paper, we developed a frequency-domain diffuse optical imaging (DOI) system for imaging non-invasively using near-infrared (NIR) light sources and detectors. 70-MHz modulation and a homodyne scheme were adopted. By calibration of the coupling coefficients, concurrent detection measurements by 4 detector sets were optimized. We presented experimental reconstruction images of absorption and scattering coefficients in a liquid phantom, located an anomaly in the phantom and determined its optical properties. The images by the multi-channel concurrent detection were improved over the results by single-channel sequential detection. Tomographic slices of absorption and scattering coefficients in the phantom with an anomaly were also presented.

• Journal of the Korea Society of Computer and Information
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• v.10 no.5 s.37
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• pp.123-132
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• 2005

In this Paper, we present an improvement of switch node for wavelength multiplex optical network. Currently because of quick increase of internet traffic a big network capacity is demanded. Wavelength multiplex optical network Provides the data transfer of high speed and the transparent characteristic of the data. Therefore optic network configuration is the most powerful technology in the future. It will be able to control the massive traffic from the optical network in order to transmit the multimedia information of very many quantify. Consequently the node where the traffic control is Possible, is demanded. The optical switch node which manages efficiently the multiple wavelength was Proposed. This switch is composed of a optical switch module for switching and a wavelength converter module for wavelength conversion. It will be able to compose the switch fabric without optical/electro or electro/optical conversion using optical MEMS(Micro Electro Mechanical Switches) module. Finally, we present the good test result regarding the operational qualify of the switch fabric and the performance of optical signal from the switch node. The proposed switch node of the optic network will be able to control the massive traffic with all optical.

• Korean Journal of Optics and Photonics
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• v.15 no.4
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• pp.375-384
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• 2004

Switching phenomenon of a three-waveguide optical coupler was analyzed by using the coupled mode theory, and the coupling-length of the device was calculated by means of the FDM. CPW traveling-wave electrodes were designed by the CMM and SOR simulation techniques so as to satisfy the conditions of phase-velocity and impedance matching. Traveling-wave modulators were fabricated on a z-cut LiNbO$_3$ substrate. Ti was in-diffused in LiNbO$_3$ to make waveguides and Au electrodes were built on the waveguides by the electroplating technique. Insertion loss and switching voltage of the optical modulator were about 4 ㏈ and 15.6V. Network analyzer was used to obtain S parameters and corresponding RF response. From the measurement, parameters of the traveling-wave electrodes were extracted as such Z$_{c}$=39.2 $\Omega$, Neff=2.48, and a0=0.0665/cm((GHz) (1/2)). The measured optical response R(w) was compared with the theoretically estimated and both responses were shown to agree well. The measurement results revealed that the ㏈ bandwidth turned out to be about 13 GHz.

• Korean Journal of Optics and Photonics
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• v.14 no.5
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• pp.545-554
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• 2003

Design of the optical modulator composed of a three-waveguide coupler and CPW traveling-wave electrodes was carried out. Switching phenomena of three-waveguide couplers were analyzed by using the coupled mode theory, and the coupling-lengths of the devices were calculated by means of the FDM. CPW traveling-wave electrodes were analysed by the CMM and SOR simulation technique in order to find the conditions of phase-velocity and impedance matching. Traveling-wave modulators were fabricated on z-cut LiNbO$_3$ substrate. Ti was in-diffused in LiNbO$_3$ to make waveguides and Au electrodes were built on the waveguides by the electrolyte technique. The fabricated modulator chip was end-polished, pig-tailed and packaged in a brass mount with K-connector. The insertion loss and the switching voltage of the optical modulator were about 4㏈ and 19V, respectively. Network analyzer was used to obtain the S parameter and the corresponding RF response. From the measurement, parameters of the traveling-wave electrodes were extracted to be Z$_{c}$= 45 Ω, N$_{eff}$=2.20, and $\alpha$$_{0}$=0.055/cm√GHZ. The measured optical response R($\omega$) was compared with the theoretically estimated one, showing both responses agree well. The measurement results revealed that 3㏈ bandwidth turned out to be about 13 GHz.

• Proceedings of the Korean Vacuum Society Conference
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• 2010.02a
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• pp.123-123
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• 2010

3족 질화물계 물질은 발광다이오드와 같은 광전자소자적용에 있어서 매우 우수한물 질이다.일반적으로, GaN 에피 성장에 있어서 저온 중간층을 삽입한 2 단계 성장 방법은 낮은 결함밀도와 균일한 표면을 얻기 위해 도입된 기술이다. 특히 AlN 중간층은 GaN 중간층과 비교하였을 때 결정성뿐만 아니라 높은 온도에서의 열적안정성, GaN 기반의 자외선 검출기서의빛 흡수 감소 등의 장점을 가지고 있다. 또한 패턴 사파이어 기판위 GaN 에피 성장은 측면성장 효과를 통해 결함 밀도 감소와 광 추출 효율을 향상시키는 것으로 알려져 있다.또한 열응력으로 인한 기판의 휨 현상은 박막성장중 기판의 온도 분포를 불균일하게 만드는 원인이 되며 이는 결국 박막 조성 및 결정성의 열화를 유도하게 되고 최종적으로 소자특성을 떨어 뜨리는 원인이 되는데 AlN 중간층의 도입으로 이것을 완화시킬 수 있는 효과가 있다. 하지만, AlN 중간층이 패턴된 기판 위에 성장시킨 GaN 에피층에 미치는 영향은 명확하지 않다. 본 연구팀은 일반적인 c-plane 사파이어 기판과 플라즈마 건식 에칭을 통한 렌즈 모양의 패턴된 사파이어 기판을 이용해서 AlN 중간층과 GaN 에피층을 유기금속 화학기상증착법으로 성장하였다. 특히, 렌즈 모양의 패턴된 사파이어 기판은 패턴 모양과 패턴 밀도가 성장에 미치는 영향을 연구하기 위해 두가지 패턴의 사파이어 기판을 이용하였다. AlN 중간층 두께를 조절함으로써 최적화된 GaN 에피층을 90분까지 4단계로 시간 변화를 주어 성장 양상을 관찰한 결과, GaN 에피박막의 성장은 패턴 기판의 trench 부분에서 시작하여 기판의 패턴부분을 덮는 측면 성장을 보이고있다. 또한 TEM과 CL을 통해 GaN 에피박막의 관통 전위를 분석해 본 결과 측면 성장과정에서 성장 방향을 따라 옆으로 휘게 됨으로 표면까지 도달하는 결정결함의 수가 획기적으로 줄어드는 것을 확인함으로써 고품질의 GaN 에피층을 성장시킬 수 있었다. 그리고 패턴밀도가 높고 모양이 볼록할수록 측면 성장 효과로 인한 결정성 향상과 난반사 증가를 통한 임계각 증가로 광추출 효율이 향상 되는 것을 확인할 수 있었다. 이러한 결과를 바탕으로 최적화된 AlN 중간층을 이용하여 패턴 기판위에서 고품질의 GaN 에피층을 성장시킬 수 있었다.