• Proceedings of the Korean Vacuum Society Conference
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• 한국진공학회 2011년도 제40회 동계학술대회 초록집
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• pp.291-291
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• 2011

플라즈마에 노출된 재료 표면의 온도 증가는 다음과 같은 요인에 의해서 결정된다. 이온의 충돌에 의한 역학적 에너지, 이온의 중성화, 라디칼의 안정화에 의한 에너지 방출(잠열, latent heat), 플라즈마에서 방출된 빛의 흡수. 이중 식각을 위한 기판 바이어스에 의해서 주로 결정되는 이온 충돌 에너지와 잠열의 방출이 300 mm wafer용 유도 결합 플라즈마 식각 장치에서 소스 전력과 바이어스 전력에 따라서 어떻게 변화하는지 전산 유체 역학 모사 프로그램인 CFD-ACE를 이용하여 상용 식각 장비인 AMAT사의 DPS II를 대상으로 온도 분포의 변화를 계산하였다. 실험 결과와 비교를 위하여 다섯 곳에(상, 하, 좌, 우, 중심) 열전대를 부착한 온도 측정 웨이퍼를 기판의 위치에 설치하고 여러 가지 실험 조건에 대해서 온도의 변화를 측정하였다. Ar 10 mTorr에서 2열 병렬 안테나의 전력을 300 W에서 시간에 따른 온도의 변화를 측정하였다. 이때 wafer의 평균 온도는 $28.9^{\circ}C$에서 $150^{\circ}C$까지 12분 내에 상승하였으며 최고 온도에 도달한 다음에는 거의 일정하게 유지 되었다. Si의 식각에서 온도의 영향을 가장 크게 받는 반응은 F 라디칼에 의한 Si의 직접 식각이며 Arrhenius 식의 형태로 표현하면 0.116*exp (-1250/T)의 형태로 된다. 문헌에 보고된 계수를 이용해서 $29^{\circ}C$의 식각 속도와 플라즈마에 의한 가열 최고 온도인 $150^{\circ}C$ 때의 값을 비교해보면 3.3배의 차이가 난다. 따라서 4%내의 식각 균일도를 목표로 하는 폴리 실리콘 게이트 식각 장비의 설계에서는 플라즈마에 의한 가열 불균일을 상쇄 할 수 있는 히터와 냉각 구조의 최적 설계가 필요하다.

• Journal of the Korea Institute of Information and Communication Engineering
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• 제21권3호
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• pp.585-593
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• 2017

In this paper, we propose a deblocking filter hardware architecture for low-power HEVC (High-Efficiency Video Coding) in-loop for mobile systems. HEVC performs image compression on a block-by-block basis, resulting in blockage of the image due to quantization error. The deblocking filter is used to remove the blocking phenomenon in the image. Currently, UHD video service is supported in various mobile systems, but power consumption is high. The proposed low-power deblocking filter hardware structure minimizes the power consumption by blocking the clock to the internal module when the filter is not applied. It also has four parallel filter structures for high throughput at low operating frequencies and each filter is implemented in a four-stage pipeline. The proposed deblocking filter hardware structure is designed with Verilog HDL and synthesized using TSMC 65nm CMOS standard cell library, resulting in about 52.13K gates. In addition, real-time processing of 8K@84fps video is possible at 110MHz operating frequency, and operation power is 6.7mW.

• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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• 한국해양정보통신학회 2008년도 추계종합학술대회 B
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• pp.289-292
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• 2008

This paper presents a branch prediction algorithm and a 4-way set-associative cache for performance improvement of OpenRISC processor and a clock gating algorithm using ODC (Observability Don't Care) operation for a low-power processor. The branch prediction algorithm has a structure using BTB(Branch Target Buffer) and 4-way set associative cache has lower miss rate than direct-mapped cache. The clock gating algorithm reduces dynamic power consumption. As a result of estimation of performance and dynamic power, the performance of the OpenRISC processor using the proposed algorithm is improved about 8.9% and dynamic power of the processor using samsung $0.18{\mu}m$ technology library is reduced by 13.9%.

• Journal of the Korea Institute of Information and Communication Engineering
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• 제14권2호
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• pp.453-461
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• 2010

This paper presents a branch prediction algorithm and a 4-way set-associative cache for performance improvement of embedded RISC core and a clock-gating algorithm using ODC (Observability Don't Care) operation to improve the power consumption of the core. The branch prediction algorithm has a structure using BTB(Branch Target Buffer) and 4-way set associative cache has lower miss rate than direct-mapped cache. Pseudo-LRU Policy, which is one of the Line Replacement Policies, is used for decreasing the number of bits that store LRU value. The clock gating algorithm reduces dynamic power consumption. As a result of estimation of performance and dynamic power, the performance of the OpenRISC core applied the proposed architecture is improved about 29% and dynamic power of the core using Chartered $0.18{\mu}m$ technology library is reduced by 16%.

• Journal of the Korean Vacuum Society
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• 제16권3호
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• pp.167-171
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• 2007

Currently, the alternative energy is one of the critical issues because of exhaustion of petroleum resources and its high cost. The solar cell is considered as the one of the promising alternative energy. And the solar cell can be classified to inorganic solar cell and organic solar cell. Although the efficiency of organic solar cell is very lower than the that of inorganic solar cell, organic solar cells have many advantages including low process cost, high transmittance, color variation, and flexibility. For these reasons, organic solar cells have the potential in low cost solar cell market that is challenging for inorganic solar cells. Recent researches of organic solar cell is concentrating on enhancement of efficiency, lifetime, and stability to order to commercially use. Working principles and the development issues of organic solar cells are discussed in this paper.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 한국전기전자재료학회 2008년도 추계학술대회 논문집 Vol.21
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• pp.112-112
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• 2008

박막형 태양전지에 관한 연구는 1954년 D.C. Reynolds 가 단결정 CdS 에서 광기전력을 발견하면서부터 시작되었다. 고효율 단결정 규소 태양전지가 간편하게 제작되고 박막형 태양전지의 수명문제가 대두되어 한때는 연구가 중단되어지기도 하였으나, 에너지 문제가 심각해지면서 값이 저렴하고 넓은 면적에 쉽게 실용화 할 수 있는 박막형 태양전지에 많은 관심을 가지게 되었다. 박막형 태양전지에 사용되는 CdS는 II-VI 족 화합물 반도체로서 에너지금지대폭이 2.42eV인 직접천이형 n-type 반도체로서 대부분의 태양광을 통과시킬 수 있으며 가시광선을 잘 투과시키고 낮은 비저항으로서 광흡수층인 CdTe/$CuInSe_2$ 등과 같이 태양전지의 광투과층(윈도레이어)으로 널리 사용되고 있다. 이러한 이종접합 박막형 태양전지의 효율을 높이기 위해선 윈도레이어 재료인 CdS 박막의 낮은 전기 비저항치와 높은 광 투과도 값이 요구되어지고 있다. CdS 박막의 제작방법으로는 spray pyrolysis법, 스크린프린팅, 소결법, puttering법, 전착법, CBD(chemical bath deposition)법 및 진공증착법 등의 여러 가지 방법들이 보고되었다. 이 중 sputtering의 경우, 다른 방법들에서는 얻기 어려운 매우 얇은 두께의 박막 증착이 가능하며, 균일성 또한 우수하다. 또한 대면적화가 용이하여 양산화 기술로는 다른 제조 방법들에 비해 많은 장점을 가지고 있다. 따라서 본 연구에서는 sputtering에 의해 증착한 CdS의 박막에 광투과도 등의 향상을 위하여 CMP( chemical mechanical polishing) 공정을 적용하여 표면 특성을 개선하고자 하였다. 그 기초적인 자료로서 CdS 박막의 CMP 공정 조건에 따른 연마율과 비균일도, 표면 특성 등을 ellipsometer, AFM(atomic force microscopy) 및 SEM(scanning electron microscope) 등을 활용 하여 분석하였다.

• Journal of Ocean Engineering and Technology
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• 제32권4호
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• pp.279-286
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• 2018

The use of eco-friendly energy in the offshore plant system is expanding because conventional generators are operated by fossil fuel or natural gas. Eco-friendly energy, which replaces existing power generation methods, should be capable of generating the power for lighting protection equipment, airborne fault indication, parameter measurement, and others. Most of the eco-friendly energy used in offshore plant facilities is solar and wind power. In the case of using photovoltaic power, because the structure must be constructed based as flat solar panels, it can be damaged easily by the wind. Therefore, there is a need for a new generation system composed of a spherical structure that does not require a separate structure and is less influenced by the wind. Considering these characteristics, in this study we designed, fabricated, and tested a unit that could provide the most efficient spherical photovoltaic power generation considering wind direction and wind pressure. Our test results indicated that the proposed system reduced costs because it did not require any separate structure, used eco-friendly energy, reduced carbon dioxide emissions, and expanded the proportion of eco-friendly energy use by offshore plant facilities.

• Journal of the Korean Chemical Society
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• 제37권7호
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• pp.642-647
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• 1993

Monolayers of pure surfactant squaraine, DSSQ(4-distearyl amino phenyl-4'-dimethylaminophenylsquaraine), were deposited on $SnO_2 $ electrodes by the Langmuir-Blodgett film technique. The DSSQ film exhibits ${\lambda}_{max}$ at ∼530 nm. The absorption is significantly red-shifted from the solution of DSSQ (633 nm in chloroform), suggesting that the squaraine chromophores form aggregates in the LB film. The photogeneration of the squaraine aggregates is studied by measuring the photocurrents in photoelectrochemical cells consisting of the squaraine of the aggregates is found to parallel its absorption spectrum and quantum efficiency as high as 0.3% has been observed. While the photocurrent was attenuated exponentially when stearic acid layers (up to 8 layers) are inserted between the squaraine layer and the electrode, it is nearly extinguished when the squaraine layer is over-coated with 2 layers of stearic acid. A model for the observation is proposed and the roles of the electrolytes and oxygen on the photogeneration process will be discussed.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 한국전기전자재료학회 1992년도 춘계학술대회 논문집
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• pp.110-113
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• 1992

$n^{+}$-p homojunction InP diodes were fabricated using thermal diffusion of Sulfur into p-type InP substrates(Zn doped, LEC grown, p=2.3${\times}$10$^{16}$c $m^{-3}$). The Sulfur diffusion was carried out at 550$^{\circ}C$, 600$^{\circ}C$, 700$^{\circ}C$ for 4 hours in a sealed quartz ampule(～2ml in volume) containing 5mg I $n_2$ $S_3$ and Img of red phosphorus. The formed junction depth was below 0.5$\mu\textrm{m}$. After the removal of diffused layer on the rear surface of the wafer, the beak ohmic contacts to the p-side were made with a vacuum evaporation of An-Zn(2%) followed by an annealing at 450$^{\circ}C$ for 5 minutes in flowing Ar gas. The front contacts were made with a vacuum evaporation of Au-Ge(12%) followed by an annealing at 500$^{\circ}C$ for 3 minutes in flowing Ar gas. The remarkable sprctral response of the cells obtained at the region of 6000-8000${\AA}$ region. The open circuit voltage $V_{oc}$ , short circuit current density $J_{sc}$ , fill factor and conversion efficiency η of the fabricated pattern solar cells(diffusion condition : at 700$^{\circ}C$ for 4 hours) were 0.660V, 14.04㎃/$\textrm{cm}^2$, 0.6536 and 10.09%, respectively.y.

• Journal of the Korean Vacuum Society
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• 제22권4호
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• pp.193-197
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• 2013

In order to investigate the photo-electric property in $VO_2$ film grown by a sol-gel method, the currents generated by the light irradiation and nonirradiation were measured as functions of the bias voltage and the temperature. From the result, the generated current in the film changed with the light irradiation and nonirradiation, and it gradually increased with the bias voltage. In particular, the maximum current was generated at $50^{\circ}C$ under the light irradiation; the temperature is lower comparing the MIT (metal-insulator transition) temperature in $VO_2$. This result indicates that $VO_2$ shows the photo-voltaic effect, and so that, it is expected that the $VO_2$ film is applied for a photo-voltaic device.