• Title/Summary/Keyword: 광결정

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Two-wave mixing in Ce:$BaTIO_3$, Mgo:$LiNbO_3$ and :$LiNbO_3$ crystals (Ce:$BaTIO_3$, Mgo:$LiNbO_3$와 Fe:$LiNbO_3$ 결정에서의 이광파혼합 실험)

  • 주원제;박주형;곽장만;오차환;송석호;한양규;김필수
    • Korean Journal of Optics and Photonics
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    • v.9 no.6
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    • pp.423-427
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    • 1998
  • Two wave mixing experiments in $LiNbO_3$, $BaTiO_3$ are carried out, and the characteristics as optical information processing device are investigated. Examined crystals are commonly used ones, such as 0.03% mol Ce-doped $BaTiO_3$, 0.03% mol Fe-doped $LiNbO_3$, and 6% mol MgO-doped $LiNbO_3$. $Ar^+$ ion laser is used as the writing beam, and He-Ne Laser is used as the reading beam. The recording-decay and erasing characteristics of diffraction gratings, the time constants, and also the angular selectivities are measured for each crystals and compared.

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Temperature dependence of photoluminescence for blue and green light emitting porous Ge and spark processed Ge (청색 및 녹색 발광 다공성 Ge 및 스파크 제조된 Ge의 광발광의 온도의존성)

  • 장성식
    • Journal of the Korean Crystal Growth and Crystal Technology
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    • v.8 no.3
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    • pp.442-447
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    • 1998
  • Visible photoluminescence (PL) has been observed generally in the blue and green spectral region from anodically etched porous Ge as well as spark processed Ge. Porous Ge which is prepared by anodic etching without UV light illumination displays the PL peak max of 52 nm (2.38 eV), while porous Ge with UV light illumination exhibits PL peak blue shift to a 470 nm (2.63 eV). Spark processed Ge shows a PL peak max of 520 nm with shoulder peaks at 420 nm and 610nm. The values of energy shift as a function of decreasing temperature between 300 K and 20 K is 0.53 and $1.89\;meVK^{-1}$ for anodic etched Ge without UV illumination and with UV illumination, respectively. On the contrary, no continuous blue shift of PL peak as a function of decreasing temperature is observed for the green luminescing spark processed Ge. From the results of PL as a function of temperature the origin of blue and green luminescing anodically etched Ge as well as spark processed Ge is discussed.

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Research of a detector for the active alignment of 64channel optical fiber using Hadamard algorithm (하다마드 복원 알고리즘을 적용한 64채널 광섬유 능동정렬용 검출기 연구)

  • Cho, Nam-Won;Kwak, Ki-Suk;Yoon, Tae-Sung;Park, Jin-Bae
    • Proceedings of the KIEE Conference
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    • 2003.11c
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    • pp.472-475
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    • 2003
  • 현재 광 정렬 시스템에 채용하고 있는 다채널 광 파워미터는 측정 채널의 수가 증가하는 상황이다. 그러나 기존 시스템 제어를 통한 각 채널의 정밀한 정렬은 다 채널 광 파워미터 기술에 적합하지 않은 방식이다. 그러므로 본 논문에서는 기존 방식을 채택한 광 정렬 방식을 개선하기 위해 하다마스 변환 복원 알고리즘을 이용한 광 능동 정렬 검출 방법을 제안한다. 다채널 광학 정렬 시스템에서 가장 중요한 문제는 채널의 증가에 따라 채널별 정렬의 정밀도가 떨어진다. 기존 정렬 시스템에서 채용하고 있는 다채널 광 파워미터의 기술 수준은 약 4채널까지 동시 측정이 가능하였다. 이 방법은 채널 양쪽에 검출기를 설치하여 광량의 최대 지점을 최적 정렬 위치로 결정한다. 그러나 시스템 채널이 증가할 수록 안쪽에 위치한 광소자를 정렬을 무시하기 때문에 정확한 정렬에 적합하지 않다. 그리고 고속, 대용량의 데이터 처리요구에 맞추기 위한 64채널 광소자 생산을 위해서는 16개의 4채널 광 파워미터를 사용하는 방법이 있으나 이는 신뢰할 만한 수준의 측정치를 제공하지 못한다. 따라서 새로운 개념을 적용한 다채널 동시측정을 위한 광소자 측정 기술 및 광 파워미터의 개발이 절실히 요구되고 있는 실정이다. 하다마드 변환 복원 알고리즘을 이용한 광 능동 정렬 검출 시스템은 이러한 요구를 충족시킬 수 있다. 그러므로 본 논문은 하다마드 변환 복원 알고리즘을 이용한 광 능동 정렬 검출 시스템이 기존의 시스템보다 우수한 알고리즘과 성능을 가지고 있음을 실험을 통해 입증한다.

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Brief Review of Silicon Solar Cells (실리콘 태양전지)

  • Yi, Jun-Sin
    • Journal of the Korean Vacuum Society
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    • v.16 no.3
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    • pp.161-166
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    • 2007
  • Photovoltaic (PV) technology permits the transformation of solar light directly into electricity. For the last five years, the photovoltaic sector has experienced one of the highest growth rates worldwide (over 30% in 2006) and for the next 20 years, the average production growth rate is estimated to be between 27% and 34% annually. Currently the cost of electricity produced using photovoltaic technology is above that for traditional energy sources, but this is expected to fall with technological progress and more efficient production processes. A large scale production of solar grade silicon material of high purity could supply the world demand at a reasonably lower cost. A shift from crystalline silicon to thin film is expected in the future. The technical limit for the conversion efficiency is about 30%. It is assumed that in 2030 thin films will have a major market share (90%) and the share of crystalline cells will have decreased to 10%. Our research at Sungkyunkwan University of South Korea is confined to crystalline silicon solar cell technology. We aim to develop a technology for low cost production of high efficiency silicon solar cell. We have successfully fabricated silicon solar cells of efficiency more than 16% starting with multicrystalline wafers and that of efficiency more than 17% on single crystalline wafers with screen printing metallization. The process of transformation from the first generation to second generation solar cell should be geared up with the entry of new approaches but still silicon seems to remain as the major material for solar cells for many years to come. Local barriers to the implementation of this technology may also keep continuing up to year 2010 and by that time the cost of the solar cell generated power is expected to be 60 cent per watt. Photovoltaic source could establish itself as a clean and sustainable energy alternate to the ever depleting and polluting non-renewable energy resource.

Optical dating of Quaternary sediment (광 여기 루미네센스를 이용한 신기 퇴적층의 연대측정)

  • 홍덕균;최정헌;한정희;최만식;정창식
    • The Journal of the Petrological Society of Korea
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    • v.10 no.3
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    • pp.202-211
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    • 2001
  • Luminescence is a physical phenomenon exhibited by many non-conducting, crystalline materials, such as quartz and feldspar. Within the crystals, energy absorbed from ionising radiation frees electrons to move through the crystal lattice and some are trapped at defects in the lattice. Observable luminescence is produced by electrons, released from traps by stimulation by absorption of light, which recombine with lattice defects which act as luminescence centers - optically stimulated luminescence (OSL). In a similar way to thermoluminescence(TL) dating, controlled measurement of the OSL signal can provide a means of determining the time since the last exposure of a layer of sediment to sunlight, the age of the sediment. However, whereas in the thermoluminescence dating of sediment only part of the latent thermoluminescence signal is bleached by sunlight as the sediment is deposited and allowance must be made during the laboratory measurements for the light insensitive component, optically induced luminescence dating has the advantage of working only with light sensitive traps in the crystal. Determination of the time since deposition of Quaternary sediment samples from the OSL of quartz grains using blue light was performed. A series of experiments and recent developments relating OSL dating are described, beginning by identifying the features which make OSL signals suitable for the development of dating method. Additionally, there are suggestions as to future research for obtaining reliable ages and a comment on current best practice on procedures, with the dating results of Quaternary sediment.

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Prediction of Internal Quality for Cherry Tomato using Hyperspectral Reflectance Imagery (초분광 반사광 영상을 이용한 방울토마토 내부품질 인자 예측)

  • Kim, Dae-Yong;Cho, Byoung-Kwan;Kim, Young-Sik
    • Food Engineering Progress
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    • v.15 no.4
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    • pp.324-331
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    • 2011
  • Hyperspectral reflectance imaging technology was used to predict internal quality of cherry tomatoes with the spectral range of 400-1000 nm. Partial least square (PLS) regression method was used to predict firmness, sugar content, and acid content. The PLS models were developed with several preprocessing methods, such as normalization, standard normal variate (SNV), multiplicative scatter correction (MSC), and derivative of Savitzky Golay. The performance of the prediction models were investigated to find the best combination of the preprocessing and PLS models. The coefficients of determination ($R^{2}_{p}$) and standard errors of prediction (SEP) for the prediction of firmness, sugar content, and acid content of cherry tomatoes from green to red ripening stages were 0.876 and 1.875kgf with mean of normalization, 0.823 and $0.388^{\circ}Bx$ with maximum of normalization, and 0.620 and 0.208% with maximum of normalization, respectively.

Crystal growth and optical absorption of $Mg_{0.16}Zn_{0.84}Te:Co $ single crystal ($Mg_{0.16}Zn_{0.84}Te:Co $단결정 성장과 광흡수 특성)

  • 정상조
    • Journal of the Korean Crystal Growth and Crystal Technology
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    • v.7 no.4
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    • pp.548-554
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    • 1997
  • The single crystal of $Mg_{0.16}Zn_{0.84}$Te:Co(Co:0.01 mole%) was grown by vertical Bridgman method. The crystal structure of $Mg_{0.16}Zn$_{0.84}$Te:Co and optical absorption properties of this compound were studied. The grown single crystal has a cubic structure and a lattice constant a=6.1422 $\AA$ were determined by X-ray diffraction. As a result of the optical absorption spectra of $Mg_{0.16}Zn_{0.84}$Te:Co, the intracenter transitions due to $Co^{2+}$ ions were detected for $A-band:^4A_2(^4F){\to}^4T_2(^4F),\; B-band:^4A_2(^4F){\to}^4T_1(^4F), C- band:^4A_2(^4F){\to}^4T_1(^4P)$.The charge transfer transition near the absorption edge was observed in the wavelength range of 550 to 770 nm. According to the crystal field theory, the crystal field parameter(Dq) and the Racah parameter(B) were determined.

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Growth of $LiTaO_3$ and Fe doped-LiTaO3 single crystal as holographic storage material (홀로그래피 소자재료 $LiTaO_3$단결정 성장)

  • 김병국;윤종규
    • Journal of the Korean Crystal Growth and Crystal Technology
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    • v.8 no.2
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    • pp.193-204
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    • 1998
  • The single crystal of the $LiTaO_3$has large electro-optic effects, so it is applied to optical switch, acousto-optic deflector, and optical memory device as hologram using photorefractive effect. In this study, optic-grade undoped $LiTaO_3$and Fe:LiTaO$LiTaO_3$single crystals were grown by the Czochralski method and optical transmission and absorption spectrums were measured in the wavelength of UV-VIS range. The curie temperature was determined with DSC and by measuring capacitance for the grown undoped crystal and ceramic powder samples of various Li/Ta ratio. In case of having a 48.6 mol% $Li_2O$ as a starting Li/Ta ratio, the results of concentration variations were below 0.01 mol% $Li_2O$ all over the crystal, so it was confirmed that $LiTaO_3$single crystals were grown under congruent melting composition having optical homogeneity. The curie temperature of the Fe:$LiTaO_3$crystal was increased with increased with increased doped Fe concentrations;by the ratio of $7.5^{\circ}C$ increase per Fe 0.1 wt%. Also, the optical transmittance was about 78 %, which was sufficient for optical device.

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Control of surface morphologies of textured ZnO:Al films prepared by in-line RF-magnetron sputtering (인라인 스퍼터링법에 의한 ZnO:Al 박막 증착 및 습식 식각에 따른 표면 형상 제어)

  • Kim, Young-Jin;Cho, Jun-Sik;Park, Sang-Hyun;Yoon, Kyung-Hoon;Song, Jin-Soo;Wang, Jin-Suk;Lee, Jeong-Chul
    • 한국신재생에너지학회:학술대회논문집
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    • 2009.06a
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    • pp.176-179
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    • 2009
  • ZnO:Al 투명전도막을 유리기판위에 in-line RF-magnetron sputtering법으로 증착온도 및 증착압력에 따라 제조하고, 습식식각에 따른 박막의 표면형상 및 광학적 특성변화를 조사하였다. 초기박막은 육방정계(Hexanonal wurtzite)의 결정 구조와 (002)면의 c-축 우선배향성을 갖으며 가시광 영역에서 높은 광 투과도(T $\geq$ 80%)와 낮은 비저항($\rho\;=\;5.2{\times}10^{-4}{\Omega}{\cdot}cm$)의 특성을 나타내었다. 습식 식각 후 박막의 표면형상은 식각 전 박막의 결정성에 큰 의존성을 보이며 본 연구에서는 1 mTorr의 낮은 증착압력과 $350^{\circ}C$의 높은 증착온도에서 증착된 결정성이 우수한 막에서 높고 균일한 형태의 crater를 갖는 표면형상을 얻을 수 있었다. 균일한 crater를 형성하는 ZnO:Al 박막은 hill 형태의 표면형상을 갖는 상용 Asahi-U glass에 비하여 높은 Haze ($T_{diffused}/T_{total}$)값과 넓은 산란각을 나타내어 향상된 광 산란특성을 갖으며 이는 실리콘 박막 태양전지내로 입사된 광의 산란경로를 증가시켜 태양전지 성능을 크게 향상시킬 수 있을 것으로 기대한다.

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비진공법을 이용한 CIGS광흡수층의 합성과 특성평가

  • Gwon, Yeong-Eun;Park, Jun-Tae;Im, Gi-Hong;Choe, Hyeon-Gwang;Jeon, Min-Hyeon
    • Proceedings of the Korean Vacuum Society Conference
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    • 2014.02a
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    • pp.312.1-312.1
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    • 2014
  • Chalcopyrite계 화합물 반도체인 $Cu(InGa)Se_2$ (CIGS)는 직접천이형 에너지 밴드갭과 전파장 영역에 대하여 높은 광흡수계수($1{\times}$[10]^5/cm)를 가지므로 두께 $1{\sim}2{\mu}m$인 박막형태으로 고효율의 태양전지 제조가 가능하다. 또한, 박막공정의 저가 가능성을 나타내면서 전세계적으로 많은 연구와 관심을 받고 있고, 현재 상용화되어 있는 결정질실리콘 태양전지를 대체할만한 재료로 주목 받고 있다. 일반적으로, CIGS박막형 태양전지 구성은는 유리를 기판으로 하여 5개의 단위 박막인 Mo 후면전극, p형 반도체 CIGS 광흡수층, n형 반도체 CdS 버퍼층, doped-ZnO 상부 투명전극, $MgF_2$ 반사방지막으로 이루어진다. 이들 중에서 태양전지의 에너지 변환효율에 결정적인 영향을 미치는 구성된다. CIGS 광흡수층의 제조는 크게 진공법과 비진공방법으로 나뉜다. 현재까지 보고된 문헌에 따르면 CIGS 박막형 태양전지의 경우에 동시증발법으로 20.3%의 에너지 변환효율을 보였지만,는데, 이는 진공장비 특성상 공정단가가 높고 대면적화가 어렵다는 단점을 가진다. 따라서, 비진공법을 이용하여 광흡수층 제작하는 것이 기술적으로 진보할 여지가 크다고 볼 수 있다. 반면 현재 상용화되어 있는 결정질실리콘 태양전지를 대체할만한 방법으로 주목 받고 있는 비진공을 이용한 저가공정은 최근 15.5%의 에너지 변환효율이 보고 되었다. 비진공법에는 전계를 이용한 증착법 및 스프레이법으로 나뉘며, 이들 광흡수층 재료의 화학적 합성은 III족 원소인 In, Ga의 함량비에 따라 광흡수층의 에너지 밴드갭(1.04~1.5 eV) 조절이 가능하다. 따라서, 본 연구에서는 비진공법에 사용되는 CIGS재료의 화학적 합성조건을 변화시켜 III족 원소의 조성비 조절을 시도하였다. CIGS 분말 시료의 입자 형태와 크기를 FE-SEM을 이용하여 관찰하였고, 화합물의 성분비를 EDX 및 XRD 분석을 통해 Ga 함량에 따른 구조적 차이를 비교해 보았다.

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