• Journal of the Institute of Electronics Engineers of Korea SD
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• v.40 no.3
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• pp.1-9
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• 2003

In this paper, we designed a highly suppressed sidelobe ladder type RF SAW bandpass filter based on 1-port resonator, for 800 MHz mobile communication system. In order to get the highest device characteristics, we optimized some important parameters such as the electrode thickness, electrode lambda weghting of the reflectors, and static capacitance ratio. Furthermore, we fabricated the Tx and Rx. filter using optimized parameters. Implemented filters can be used in 800 MHz mobile communication system and external impedance matching circuits are not needed. RF filter was fabricated on 36$^{\circ}$LiTaO$_3$ substrates with Al-Cu (W 3 %)and mounted 3.8mm$\times$3.8mm$\times$1.5mm SMD package. Developed filters has 2.3 dB insertion loss in the 25 MHz pass-band, 33MHz with 3-dB insertion loss, stop-band rejection of 30 dB, passband ripple is less than 0.5 The power durability of the filters measured about 3.5W and the maximum temperature variation within -2$0^{\circ}C$~8$0^{\circ}C$ was 0.09 dB/$^{\circ}C$ of 3-dB insertion loss.

• Journal of the Institute of Electronics and Information Engineers
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• v.52 no.2
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• pp.83-88
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• 2015

In this paper, $2mm{\times}2mm$ sized piezoresistive accelerometers were designed and fabricated. Two kinds of accelerometers with different spring structure are designed. One is an accelerometer with 4 beam spring located in the center of the mass, the other is an accelerometer with 8 beam spring located in the vertices of the mass. The modal analysis of the accelerometers and the structural analysis were performed using ANSYS program. The former has the superior sensitivity characteristics of $21.38{\mu}V/V/g$ and the lower offset drift of $154.45ppm/^{\circ}C$ than the latter.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2004.07a
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• pp.519-522
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• 2004

첨가제로 $Bi2O_3$를 첨가하고, 소결 온도를 변화시켜 고주파 내역에서 전자기적 특성이 안정적으로 유지될 수 있는 Ni-Zn 페라이트를 제조하고자 하였다. $Bi2O_3$의 첨가는 액상을 형성하여 소결을 촉진시키며, 0.3 wt% 첨가된 시편에서는 비정상 입자를 성장시켜 높은 전력 손실 특성을 나타내었다. 그러나 $Bi2O_3$의 적정한 첨가는 소결을 촉진시켜 밀도를 증가시키며, 균일한 입자를 형성하여 전력 손실이 감소하였다. Ni-Zn 페라이트에 $Bi2O_3$의 첨가는 공명 주파수 범위의 제어가 가능하며, 소결 촉진 및 밀도의 증가를 가져와 안정적인 재료를 제조할 수 있었다. 투자율의 일정성이 특정 주파수 10MHz 부근에서 급증하면서 급감하는 것은 공명이 생기고, 이러한 현장은 자벽 공명 또는 자벽의 이동에 의해 나타나는 것으로 보여진다.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.13 no.8
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• pp.675-680
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• 2000

In this study the temperature coefficient of resonant frequency(TC $F_{r}$) dielectric and piezoelectric properties of Pb[(S $b_{1}$2//N $b_{1}$2/)$_{0.065}$)-(Z $r_{x}$, $Ti_{1-x}$ )$_{0.90}$] $O_3$ceramics were investigated with Zr/Ti ratio. The compositions near the morphotropic phase boundary (MPB) appeared when Zr/Ti ratio was 49.5/50.5 The dielectric constant and electromechanical coupling factor( $k_{p}$) also showed the highest values of 1,257, 0.653 respectively when the Zr/Ti ratio was 49.5/50.5 Moreover the mechanical quality factor( $Q_{m}$) showed th lowest value of 713 when the Zr/Ti ratio. The temperature coefficient of resonant frequency(TC $F_{r}$) abruptly change at the morphotropic phase boundary(MPB) which existed between the rhombohedral phase with highly negative TC $F_{r}$ of -106ppm/$^{\circ}C$ and the tetragonal phase with highly positive TC $F_{r}$ of +64pp $m^{\circ}C$ as Zr/Ti ratio varied from 50/50 to 49.5/50.5.50.5..50.5.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.7 no.2
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• pp.301-308
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• 1997

The LNT ceramics which has the large negative temperature coefficient of resonant frequency ($\tau_1$) were manufactured by varying the $TiO_2$ contents. The effects of secondary phase $TiO_2$ which was caused by excess $TiO_2$ on the microstructure, phase transformations and microwave dielectric properties in ($Li_{1/2}Nd_{1/2}$)$TiO_3$ binary system were studied by X-ray and SEM. In case of adding up to 5 mol% $TiO_2$ on LNT, the liquid phase $TiO_2$which was created in the grain boundary of LNT not only increased the bulk density but also caused the nonhomogeneous structure of LNT which reduced the microwave dielectric characteristics. But the temperature coefficient of resonant frequency was improved by the 10 mol% addition of $TiO_2$.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.27 no.8
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• pp.709-716
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• 2016

In this paper, A duplexer module with temperature-insensitive electrical characteristics was proposed for remote wireless communication system. Duplexer modules are required to have performances of low insertion loss, high isolation between transmitted band and received band, harmonic suppression as well as high power durability in the system for transmitting guided information to missile flying a free space on the ground. The proposed duplexer module are consist of transmission bandpass filter and receiving bandpass filter which are connected to common antenna port, planar coupler for output power monitoring and low pass filter for harmonic attenuation of power amplifier and coaxial cavity resonator. The material and dimensions of the resonator are determined for minimum frequency shift by temperature variation using 3D EM simulation. The measured results of the prototype showed a good agreement with the simulation results, and it should be well applied not only for guided weapon systems but also for any other communication systems such as remote radio head.

• Proceedings of the Korean Institute of IIIuminating and Electrical Installation Engineers Conference
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• 2009.10a
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• pp.185-187
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• 2009

본 논문에서는 디밍으로 인한 32W 형광등의 수명특성과 동정을 실험을 통해서 분석하였다. 기존의 형광 램프용 전자식 안정기 내부의 인버터 공진특성을 이용해 주파수를 변환시켜 소비전력을 낮추면서 형광등의 조도를 조정하였다. 조정된 형광등의 안정기를 소비전력의 퍼센트별로 분류해서 조도특성을 위주로 수명의 측정을 실시하였다. 수명특성 실험은 2개월간 실험실 내에 형광등을 설치 할 수 있는 실험대를 제작하였으며 주기적으로 형광등의 주위온도와 조도의 측정을 실시하였다. 본 논문에서 분석한 형광등의 수명특성 결과는 향후 형광등 전용 디밍 전자식 안정기 설계 시 활용 될 수 있을 것이다.

• Korean Journal of Materials Research
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• v.8 no.7
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• pp.659-663
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• 1998

The effect of Bi-substitution in $BaO.(Nd_{1-x}Bi_x)_2O_3.4TiO_2$ ceramic was studied on the formation of crystal phases, microstructure, and microwave dielectric properties. $BaO.(Nd_{1-x}Bi_x)_2O_3.4TiO_2$, solid solution (0$\leq$x$\leq$0.2) were formed by Bi-substitution into the Nd site of $BaO.(Nd_{1-x}Bi_x)_2O_3.4TiO_2$ ceramics. Average grain size increased with Bi-substitution. Dielectric constant(${\varepsilon}_r$) increased from 84 to U8, and the temperature coefficient of resonant frequency(${\tau}_f$) decreased from 44 ppm/$^{\circ}C$ to -30 ppm/$^{\circ}C$ when Bi contents increased up to x=0.2 in $BaO.(Nd_{1-x}Bi_x)_2O_3.4TiO_2$ solid solutions. $BaO.(Nd_{1-x}Bi_x)_2O_3.4TiO_2$ solid solutions with x=0.04~0.08 showed the most superior microwave dielectric properties, those are ${\varepsilon}_r$= 89-92, Q . f = 5855~6091 GHz, and (${\tau}_f$)= -7.5-7.5 ppm/$^{\circ}C$.

• Journal of IKEEE
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• v.24 no.1
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• pp.260-268
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• 2020

This paper presents the high frequency resonant inverter of class D SEPP(Single-Ended Push Pull) type using LS-ZVS-LSTC, which can reduce the switching losses during the turn-on and turn-off switching time. The analysis of high frequency resonant inverter using LS-ZVS-LSTC(Low-loss Turn-off Snubber Capacitor) proposed in this paper is described in general by adopting the normalized parameters. The operating characteristics of the proposed high frequency resonant inverter were also evaluated by using the control parameters such as the normalized control frequency(μ), the normalized load time constant(τ), the coupling factor(κ) and so on. Based on the characteristic values through the characteristics of evaluation, an example of the design method of the 1.8[kW] class D SEPP type high frequency inverter is suggested, and the validity of the theoretical analysis is verified using the experimental data.

• Proceedings of the Korean Vacuum Society Conference
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• 2000.02a
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• pp.108-108
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• 2000

급증하는 무선통신 정보수요는 특히, 고주파대역 (300NHz-300GHz)에서 사용되는 공진기, 필터, 발진기 등과 같은 소자의 품질향상을 요구하고 있다. 고주파용 유전체 중 ZrTiO4 는 $\alpha$-PbO2 계열의 사방정구조를 갖고 있는 유전체로서 높은 유전율 ($\varepsilon$=40)과 높은 품질계수 (Q=1/tan$\delta$=4700 at 7GHz)를 갖고 있고, Sn 첨가시 0ppm/$^{\circ}C$의 공진주파수 온도계수를 얻을 수 있다고 보고되어 있다. 본 연구에서는 약 110$0^{\circ}C$ 이상에서 안정한 상으로 존재하는 ZrTiO4를 저온에서 증착하여 준안정한 상태로 결정화되게 한후, 유전손실 (tan$\delta$)과 유전율($\varepsilon$)을 측정하였다. 또한 증착온도와 열처리과정에 따른 박막의 us형 (Strain) 정도의 변화를 X-선 회절결과로부터 분석하였으며 이를 측정된 유전특성 값과 비교하였다. ZrTiO4 박막은 DC magnetron reactive sputter로 Zr과 Ti 타겟으로부터 high phosphorous doped Si (100) 기판위에 증착하였다. 압력은 4mTorr로 유지하고 박막의 화학양론적 조성비를 맞추기 위해 각 타겟에 가해지는 power는 Zr/Ti=500W/650W로 고정하고, 반응가스의 비율을 Ar/O2=17sccm/3.5sccm으로 유지하여 박막내에 인입되는 산소량을 제어하였다. 증착 직후와 열처리 후의 박막특성을 비교하기 위해 증착온도를 상온에서부터 $600^{\circ}C$까지 변호시키고 증착후 각각의 시편을 80$0^{\circ}C$ 산소분위기에서 2시간동안 열처리하여 시편을 준비하였다. 박막의 상형성 여부와 결정성변화는 $ heta$-2$\theta$X-선 회절법을 사용하여 조사하였고, EPMA를 이용하여 박막의 조성을 확인하였다. 유전특성의 측정을 위해 백금 상부전극을 증착한 후, impedance analyzer를 이용하여 100kHz 영역에서의 유전손실을 측정하고, 측정된 정전용량과 박막의 두께로부터 유전율을 계산하였다. ZrTiO4 박막은 증착온도 20$0^{\circ}C$ 이상에서 결정성을 보이기 시작했으며, 열처리 이후에는 상온에서 비정질이었던 시편이 $650^{\circ}C$ 이상의 온도에서 결정화되기 시작하였다. 증착온도에 따라 유전손실은 0.038에서 0.017 정도로 감소하는 경향을 나타냈으며, 각각 열처리에 의해서 0.034, 0.005 정도로 다시 감소하였다. 박막의 유전율은 약 35 정도의 값을 나타내었으며 X-선 회절 data로부터 분석한 박막의 변형은 증온도에 따라 7.2%에서 0.04%로 감소하였고 이 이경향은 유전손실은 감소경향과 일치하였다.