• Korean Chemical Engineering Research
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• v.48 no.4
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• pp.511-514
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• 2010

Perfluorinated polymer($Cytop^{TM}$) was deposited on selective area of AlGaN/GaN HEMT structure using low cost and simple spin-coating method, and the electrical characteristics of the device was analyzed for application of passivation layer on semiconductors. Gate lag measurement results of $Cytop^{TM}$ passivated and unpassivated HEMT were compared. Passivated device shows improved 65 % pulsed drain current of dc mode value. Rf measurements were also performed. $Cytop^{TM}$ passivated HEMT have similar rf performance to PECVD grown $Si_3N_4$ passivated device. $Cytop^{TM}$ passivation layer may play an important role in mitigating surface state trapping in the region between gate and drain.

• Proceedings of the KIEE Conference
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• 2006.10a
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• pp.65-66
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• 2006

AIGaN/GaN 고전자 이동도 트랜지스터 (High Electron Mobility Transistors, HEMTs)는 와이드 밴드-갭과 높은 항복 전계 및 우수한 채널 특성으로 인해 마이크로파 응용분야와 전력용 반도체에서 각광받고 있다. 최근, 전력 응용분야에서 요구되는 높은 항복 전압과 출력, 우수한 주파수 특성을 획득하기 인해 이중 게이트 AIGaN/GaN HEHTs에 관한 연구가 발표되고 있다. 본 논문에서는 AIGaN/GaN HEMTs에 이중 게이트를 적용하여, 두 개의 게이트와 드레인, 소스의 누설 전류를 각각 측정하여 이중 게이트 AIGaN/GaN HEMTS의 누설 전류 메커니즘을 분석하였다. 또한 제안된 소자의 $SiO_2$ 패시베이션 전 후의 누설 전류 특성을 비교하였다. $SiO_2 $ 패시베이션되지 않은 소자의 누설 전류는 드레인, 소스와 추가 게이트로부터 주 게이트로 흐른 반면, 패시베이션 된 소자 누설 전류는 드레인으로부터 주 게이트 방향의 누설 전류만 존재하였다. $SiO_2$ 패시베이션 된 소자의 누설 전류는 (87.31 nA ) 패시베이션 되지 않은 소자의 누설 전류 ( $8.54{\mu}A$ )에 비해 의게 감소하였다.

• Journal of the Korea Institute of Military Science and Technology
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• v.13 no.6
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• pp.1071-1079
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• 2010

This paper describes the design and fabrication of a high-efficiency GaN HEMT(Gallium Nitride High-electron Mobility Transistor) Pallet power amplifier module for S-band phased array radar applications. Pallet amplifier module has a series 2-cascaded power amplifier and the final amplification-stage consists of balanced GaN HEMT transistor. In order to achieve high efficiency characteristic of pallet power amplifier module, all amplifiers are designed to the switching-mode amplifier. We performed with various PRF(Pulse Repetition Frequency) of 1, 10, 100 and 1000Hz at a fixed pulse width of $100{\mu}s$. In the experimental results, the output power, gain, and drain efficiency(${\eta}_{total}$) of the Pallet power amplifier module are 300W, 33dB, and 51% at saturated output power of 2.9GHz, respectively.

• Proceedings of the Korean Vacuum Society Conference
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• 2013.02a
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• pp.427-427
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• 2013

잉크젯 프린팅 방법은 전도성 고분자 물질을 잉크 재료로 사용하여 전자 소자의 전극 패턴을 형성할 수 있으며 비접촉, drop-on-demand 공정으로 현재 많은 관심을 받고 있는 연구 분야이다. Ag는 $1.59{\mu}m{\cdot}cm$의 저항을 나타내는 가장 낮은 저항을 가지고 있는 물질 중의 하나이며, Ag 전도성 잉크는 고전도 패턴의 형성을 위해 현재 많이 사용되고 있는 물질이다. 본 연구에서는 a-IGZO 박막을 채널층으로 사용하여 Ag S/D 전극을 잉크젯 프린팅 방법으로 형성하여 산화물 트랜지스터를 제작하였다. a-IGZO 채널층은 $SiO_2$가 증착된 Si 기판위에 스퍼터링 방식으로 80 nm의 두께로 형성하였다. Ag S/D 전극은 10 pl의 카트리지가 장착된 Fujifilm Dimatix DMP 2800 장비를 사용하여 형성하였으며, 프린팅 후 $130^{\circ}C$로 20분간 열처리를 하였다. Fig. 1은 잉크젯 프린팅된 Ag S/D을 가진 a-IGZO의 트랜지스터 특성을 보여준다. 채널 W/L가 90/$50{\mu}m$ 구간에서 드레인 전압이 50 V 일때, 전계효과이동도 $0.27cm^2$/Vs, 문턱전압 6.03 V, 문턱전압 아래의 기울기 값은 2.06 V/dec를 얻었다. 이와 같은 특성은 잉크젯 프린팅 방법으로 Ag S/D 전극을 형성함으로써 산화물 TFT에서 잉크젯 프린팅 방식의 다양한 응용 가능성을 확인할 수 있었다.

• Proceedings of the KIEE Conference
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• 2015.07a
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• pp.1124-1125
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• 2015

밴드-갭이 큰 반도체는 실리콘에 비하여 다양한 전기 물성 장점을 가져 고주파수 증폭 소자나 차세대 전력 반도체 소자로 각광을 받고 있다. 다양한 와이드 밴드-갭 반도체 중 AlGaN/GaN 이종접합 반도체는 채널의 높은 전도성과 높은 임계 전계로 인하여 우수한 전기적 특성을 가진다. 최근 발전된 수치해석 시뮬레이션을 이용하여 AlGaN/GaN 고전자 이동도 트랜지스터 (high-electron-mobility transistor, HEMT)의 설계연구를 진행하였다. AlGaN 장벽층의 두께가 증가할수록 채널의 전자 면 농도가 증가하도록 설계하였다. 또한 게이트 필드 플레이트 설계를 통하여 AlGaN/GaN HEMT의 역방향 전계 피크를 1개에서 2개로 증가시켜 항복전압을 368 V에서 최대 822 V로 개선하였다. 수렴문제를 개선한 수치해석 시뮬레이션은 RF power AlGaN/GaN HEMT의 설계에 유용하다.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.47 no.6
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• pp.1-6
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• 2010

We present simulation results on DC characteristics of AlGaN/GaN HEMT having stair-type gate electrodes, in comparison with those of the conventional single gate AlGaN/GaN HEMTs and field-plate enhanced AlGaN/GaN HEMTs. In order to reduce the internal electric field near the gate electrode of conventional HEMT and thereby to increase their DC characteristics, we applied three-layered stacking electrode schemes to the standard AlGaN/GaN HEMT structure. As a result, we found that the internal electric field was decreased by 70% at the same drain bias condition and the transconductance (gm) was improved by 11.4% for the proposed stair-type gate AlGaN/GaN HEMT, compared with those of the conventional single gate and field-plate enhanced AlGaN/GaN HEMTs.

• Journal of the Korean Vacuum Society
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• v.20 no.5
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• pp.345-355
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• 2011

GaAs-based metamorphic high electron mobility transistors (MHEMTs) and InP-based high electron mobility transistors (HEMTs) have good microwave and millimeter-wave frequency performance with lower minimum noise figure. MHEMTs have some advantages, especially for cost, compared with InP-based ones. In this paper, InAlAs/InxGa1-xAs/GaAs MHEMTs are simulated for DC/RF small-signal analysis. The hydrodynamic simulation parameters are calibrated to a fabricated 0.1-${\mu}m$ ${\Gamma}$-gate MHEMT device having the modulation-doped $In_{0.52}Al_{0.48}As/In_{0.53}Ga_{0.47}As$ heterostructure on the GaAs substrate, and the simulations for RF small-signal characteristics are performed, compared with the measured data, and analyzed for the devices. In addition, the simulations for the DC/RF characteristics of the MHEMTs with different gate-recess structures are performed, compared and analyzed.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.4 no.3
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• pp.527-536
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• 2000

This paper discusses the design of self-oscillating mixer type low noise down converter using the microwave field effect transistor. The mixer is consists of local oscillator in which high stability dielectric resonator and band pass filter to get rid of spurious oscillation at intermediate frequency stage. The microstrip antenna was integrated in the same substrate which generate 12.3GHz and low noise amplifier was also added after antenna using 3 stage of high electron mobility transistors. The output frequency from the local oscillator was chosen as 11.3GHz for the Ku-band application. The measured phase noise was -804dBc/Hz at 100kHz offset frequency, and the gain was 7～12dB in frequency range from 12.0GHz to 12.7GHz. The noise figure at intermediate frequency stage was 64H. The designed model shows less conversion loss than previous diode type mixer. The proposed mixer can be used in digital satellite broadcasting and communication system and expected to use in next generation low noise block design.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.11 no.5
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• pp.365-370
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• 1998

We studied a electrical properties in GaAs/AlGaAs/InGaAs pseudomorphic high electron mobility transistors(PHEMT s) recessed by electron cyclotron resonance(ECR) plasma and wet etching. Using the $NH_4OH$ solution, a nonvolatile AlF$_3$layer formed on AlGaAs surface after selective gate recess is effectively eliminated. Also, we controlled threshold voltage($V_th$) using $H_3PO_4$ etchant. We have fabricated a device with 540 mS/mm maximum transconductance and -0.2 V threshold voltage by using $NH_4OH$ and $H_3PO_4$dip after ECR gate recessing. In a 2-finger GaAs PHEMT with a gate length of 0.2$\mu m$ and width of 100 $\mu m$, a current gain of 15 dB at 10 GHz and a maximum cutoff frequency of 58.9 GHz have been obtained from the measurement of current gain as a function of frequency at 12mA $I_{dss}$ and 2 V souce-drain voltage.