• Journal of Adhesion and Interface
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• v.22 no.3
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• pp.91-97
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• 2021

By introducing an organic interlayer on the Parylene C dielectric surface, the electrical device performances and the operating stabilities of organic field-effect transistors (OFETs) were improved. To achieve this goal, hexamethyldisilazane (HMDS) and octadecyltrichlorosilane (ODTS), as the organic interlayer materials, were used to control the surface energy of the Parylene C dielectrics. For the bare case used with the pristine Parylene C dielectrics, the field-effect mobility (μ_FET) and threshold voltage (V_th) of dinaphtho[2,3-b:2',3'-f ]thieno[3,2-b]- thiophene (DNTT) FET devices were measured at 0.12 cm²V^-1s^-1 and - 5.23 V, respectively. On the other hand, the OFET devices with HMDS- and ODTS-modified cases showed the improved μ_FET values of 0.32 and 0.34 cm²V^-1s^-1, respectively. More important point is that the μ_FET and V_th of the DNTT FET device with the ODTS-modified Parylene C dielectric presented the smallest changes during a repeated measurement of 1000 times, implying that it has the most stable operating stability. The results could be meaned that the organic interlayer, especially ODTS, effectively covers the Parylene C dielectric surface with alkyl chains and reduces the charge trapping at the interface region between active layer and dielectric, thereby improving the electrical operating stability.

• Journal of the Microelectronics and Packaging Society
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• v.29 no.3
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• pp.55-61
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• 2022

In this study, properties of Pb-free solder joints which were combined using Sn-3.0Ag-0.5Cu (SAC305) Pb-free solder with a mid-temperature type of melting temperature and Sn-57Bi-1Ag Pb-free solder with a low-temperature type of melting temperature were reported. Combined Pb-free solder joints were formed by reflow soldering processes with ball grid array (BGA) packages which have SAC305 solder balls and flame retardant-4 (FR-4) printed circuit boards (PCBs) which printed Sn-57Bi-1Ag solder paste. The reflow soldering processes were performed with two types of temperature profiles and interfacial properties of combined Pb-free solder joints such as interfacial reactions, formations of intermetallic compounds (IMCs), diffusion mechanisms of Bi, and so on were analyzed with the reflow process conditions. In order to compare reliability characteristics of combined Pb-free solder joints, we also conducted thermal shock test and analyzed changes of mechanical properties for joints from a shear test during the thermal shock test.

• Journal of Adhesion and Interface
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• v.24 no.1
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• pp.26-35
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• 2023

Generally, solvent-type coatings generate a large amount of volatile organic chemicals(VOC), which are carcinogenic substances, in the manufacturing process, and their use is regulated due to environmental problems. There is also the problem of resource depletion due to limited fossil fuels. Therefore, in this study, UV-curable urethane acrylate oligomers were synthesized with different contents of isosorbide, which is a biomass material, and proceeded to evaluate the physical properties of coatings. As the isosorbide contents increased, the viscosity, glass transition temperature, tensile strength, stain resistance, and pencil hardness increased, but elongation and flexibility decreased, and BOI-3 showed the best adhesion. The isosorbide content of the oligomer fixed at 20%, UV-curable urethane acrylate oligomer was synthesized according to the content ratio of polycaprolactone diol(PCL) and Ecoprol H1000(Ecoprol). As the PCL/Ecoprol content ratio increased, the glass transition temperature, elongation, and flexibility increased, but the tensile strength and pencil hardness decreased. It was confirmed that the adhesion and stain resistance increased by improving the surface bonding strength of PCL. All films of oligomers synthesized were transparent without discoloration.

• Journal of Adhesion and Interface
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• v.25 no.1
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• pp.169-274
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• 2024

Recent attention has been drawn to materials that undergo reversible expansion and contraction in response to external stimuli, leading to morphological changes. These materials hold potential applications in various fields including soft robotics, sensors, and artificial muscles. In this study, a novel material capable of responding to high temperatures for protection or encapsulation is proposed. To achieve this, liquid crystal elastomer (LCE) with nematic-isotropic transition properties and polyimide (PI) with high mechanical strength and thermal stability were utilized. To utilize a solution process, a dope solution was synthesized and introduced into micro-printing techniques to develop a two-dimensional pattern of LCE/PI bilayer structures with sub-millimeter widths. The honeycomb-patterned LCE/PI bilayer mesh combined the mechanical strength of PI with the high-temperature contraction behavior of LCE, and selective printing of LCE facilitated deformation in desired directions at high temperatures. Consequently, the functionality of selectively and reversibly encapsulating specific high-temperature materials was achieved. This study suggests potential applications in various actuator fields where functionalities can be implemented across different temperature ranges without the need for electrical energy input, contingent upon molecular changes in LCE.

• Journal of the Korean Vacuum Society
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• v.14 no.2
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• pp.78-83
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• 2005

Nanometric crystalline silicon (no-Si) embedded in dielectric medium has been paid attention as an efficient light emitting center for more than a decade. In nc-Si, excitonic electron-hole pairs are considered to attribute to radiative recombination. However the surface defects surrounding no-Si is one of non-radiative decay paths competing with the radiative band edge transition, ultimately which makes the emission efficiency of no-Si very poor. In order to passivate those defects - dangling bonds in the $Si:SiO_2$ interface, hydrogen is usually utilized. The luminescence yield from no-Si is dramatically enhanced by defect termination. However due to relatively high mobility of hydrogen in a matrix, hydrogen-terminated no-Si may no longer sustain the enhancement effect on subsequent thermal processes. Therefore instead of easily reversible hydrogen, phosphorus was introduced by ion implantation, expecting to have the same enhancement effect and to be more resistive against succeeding thermal treatments. Samples were Prepared by 400 keV Si implantation with doses of $1\times10^{17}\;Si/cm^2$ and by multi-energy Phosphorus implantation to make relatively uniform phosphorus concentration in the region where implanted Si ions are distributed. Crystalline silicon was precipitated by annealing at $1,100^{\circ}C$ for 2 hours in Ar environment and subsequent annealing were performed for an hour in Ar at a few temperature stages up to $1,000^{\circ}C$ to show improved thermal resistance. Experimental data such as enhancement effect of PL yield, decay time, peak shift for the phosphorus implanted nc-Si are shown, and the possible mechanisms are discussed as well.

• Journal of the Korean Electrochemical Society
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• v.10 no.2
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• pp.132-140
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• 2007

The phase-shift method and correlation constants for studying a linear relationship between the behavior ($-{\varphi}\;vs.\;E$) of the phase shift ($0^{\circ}{\leq}-{\varphi}{\leq}90^{\circ}$) for the optimum intermediate frequency and that (${\theta}\;vs.\;E$) of the fractional surface coverage ($1{\geq}\theta{\geq}0$) have been proposed and verified to determine the Langmuir, Frumkin, and Temkin adsorption isotherms (${\theta}\;vs.\;E$) at noble metal/aqueous electrolyte interfaces. At an Ir/0.1 M KOH aqueous electrolyte interface, the Langmuir and Temkin adsorption isotherms (${\theta}\;vs.\;E$), equilibrium constants ($K=3.3{\times}10^{-4}\;mol^{-1}$ for the Langmuir and $K=3.3{\times}10^{-3}{\exp}(-4.6{\theta})\;mol^{-1}$ for the Temkin adsorption isotherm), interaction parameter (g = 4.6 for the Temkin adsorption isotherm), and standard free energies (${\Delta}G_{ads}^0=19.9kJ\;mol^{-1}\;for\;K=3.3{\times}10^{-4}\;mol^{-1}$ and $16.5<{\Delta}G_{\theta}^0<23.3\;kJ\;mol^{-1}\;for\;K=3.3{\times}10^{-3}{\exp}(-4.6{\theta})\;mol^{-1}\;and\;0.2<\theta<0.8$) of H for the cathodic $H_2$ evolution reaction are determined using the phase-shift method and correlation constants. The inhomogeneous and lateral interaction effects on the adsorption of H are negligible. At the intermediate values of ${\theta},\;i.e,\;0.2<{\theta}<0.8$, the Temkin adsorption isotherm (${\theta}\;vs.\;E$) correlating with the Langmuir or the Frumkin adsorption isotherm (${\theta}\;vs.\;E$), and vice versa, is readily determined using the correlation constants. The phase-shift method and correlation constants are accurate and reliable techniques to determine the adsorption isotherms (${\theta}\;vs.\;E$) and related electrode kinetic and thermodynamic parameters(K, g, ${\Delta}G_{ads}^0, {\Delta}G_{\theta}^0$).

• Proceedings of the Korean Vacuum Society Conference
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• 2016.02a
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• pp.368-368
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• 2016

그래핀(Graphene)은 탄소 원자가 6각 구조로 이루진 2차원 알려진 물질 중 가장 얇은(0.34 nm) 두께의 물질이며 그 밴드구로조 인해 우수한 전자 이동도($200000cmV^{-1}s^{-1}$)를 가지고 있며, 이외에도 기계적, 화학적으로 뛰어난 특성을 가진다. 대면적화 된 그래핀을 성장시키기 위한 방법으로는 화학적 기상 증착법(Chemical Vapor Deposition)이 있다. 하지만 실제 여러 전이금속에서 합성되는 그래핀은 다결정으로, 서로 다른 면 방향을 가진 계면에서 전자의 산란이 일어나며, 고유의 우수한 특성이 저하되게 된다. 따라서 전자소재로 사용되기 위해서는 단결정의 대면적화 된 그래핀에 대한 연구가 지속적으로 이루어지고 있다. 앞서의 두 문제점 중, 단결정의 그래핀 합성에 크게 영향을 미치는 요인으로는 크게 합성 온도, 촉매 기판의 탄소 용해도, 촉매 표면에서의 탄소 원자의 확산성이 있다. 본 연구에서는 구리, 니켈, 실리콘에 비해 탄소 용해도가 낮으며, 탄소 원자의 높은 확산성으로 인해 단결정의 단층 그래핀을 합성에 적합하다고 보고된 저마늄(Germanium) 기판을 사용하여 그래핀을 합성하였다. 단결정의 그래핀을 성장시키기 위해 메탄(Methane; $CH_4$)가스의 주입량과 수소 가스의 주입량을 제어하여 성장 속도를 조절 하였으며, 성장하는 그래핀의 면방향을 제어하고자 하였다. 표면의 산화층(Oxidized layer)을 제거하기 위하여 불산(Hydrofluoric acid)를 사용하였다. 불산 처리 후 표면의 변화는 원자간력현미경(Atomic force microscopipe)을 통하여 분석하였다. 합성된 그래핀의 특성을 저 에너지 전자현미경(Low energy electron microscopy), 광전자 현미경(Photo emission electron microscopy), 라만 분광법(Raman spectroscopy), 원자간력현미경(Atomic force microscopy)와 투과전자현미경 (transmission electron microscopy)을 이용하여 기판 표면의 구조와 결정성을 분석하였다.

• Journal of the Korean Electrochemical Society
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• v.21 no.3
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• pp.55-60
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• 2018

The demand for LIBs with higher energy densities has increased continuously because the emergence of wider and more challenging applications including HEV and EV has became imperative. However, in the case of anode material, graphite is insufficient to meet this need. To meet such demand, several type of negative electrode materials like silicon, tin, SiO, and transition metal oxide have been investigated for the advanced lithium secondary batteries. Recently, lithium vanadium oxide, which has a layered structure, is assumed as one of the promising anode material as alternative of graphite. This material shows a high volumetric capacity, which is 1.5 times higher than that of graphite. However, relative low electrical conductivity and particle fracture, which results in the electrolyte decomposition and loss of electric contact between electrode, induce rapid capacity decay. In this report, we investigated the effect of electrolyte additive on the electrochemical characteristics of lithium vanadium oxide.

• Applied Chemistry for Engineering
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• v.10 no.5
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• pp.789-795
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• 1999

In this study, carbon fiber reinforced cement composites(CFRCs) reinforced with short noncircular type carbon fibers were fabricated and properties(drying shrinkage, resistance to freezing and thawing, and fracture toughness) were compared with those of the CFRCs reinforced with circular type carbon fibers. It was found that these properties greatly depended on the shape and length of carbon fibers. The drying shrinkage of CFRCs reinforced with C-type carbon fiber was superior to other CFRCs. This effect was increased with a high aspect ratio of fiber. The resistance to freezing and thawing was increased with the fiber length and fiber volume percent, but there was on remarkable effect to fiber shape. Fracture toughness and resistance to crack propagation of CFRCs reinforced with C-CFs were improved compared with other CFRCs. It was believed that the more absorption of fracture energy into the larger interface caused an increase in fracture toughness and resistance to crack propagation.

• Proceedings of the Korean Vacuum Society Conference
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• 2015.08a
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• pp.194.2-194.2
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• 2015

본 논문에서는 InP 기판에 자발형성법 (Self-assembled Mode)으로 성장한 InAs/InAlGaAs 양자점(Quantum Dots)의 외부 열처리 온도에 따른 광학적 특성을 논의한다. 분자선증착기 (Molecular Beam Epitaxy, VH80MBE)로 5주기 적층구조를 갖는 InAs/InAlGaAs 양자점 시료 (기준시료)를 성장 후 온도 의존성 및 여기광세기 의존성 포토루미네슨스 (photoluminescence, PL) 분광법으로 기본특성을 평가하였다. 양자점 시료를 $500{\sim}800^{\circ}C$에서 열처리를 수행하고 광학적 특성을 열처리 전과 비교하여 분석하였다. $550^{\circ}C$에서 열처리한 InAs/InAlGaAs 양자점 시료의 저온 (11K) PL 파장은 1465 nm를 보였으며, 이는 열처리를 하지 않은 기준시료의 1452 nm 보다 13 nm 장파장으로 이동하였다. 열처리 온도가 $700^{\circ}C$ 이상인 경우, 양자점 PL 파장이 다시 단파장으로 이동하는 현상을 보였지만 여전히 열처리하지 않은 기준시료보다 장파장을 나타내었다. $700^{\circ}C$에서 열처리한 양자점 시료의 저온 PL 광세기는 기준시료보다 15.5배 더 크게 나타났으며, 주변 온도가 증가할수록 더디게 감소하는 것을 확인할 수 있었다. 온도의존성 PL로부터 구한 활성화에너지 (Activation Energy)는 $700^{\circ}C$ 열처리 온도의 경우 175.9 meV를 나타내었다. InAs/InAlGaAs 양자점 시료의 열처리 온도에 따른 광특성 변화를 InAs 양자점과 InAlGaAs 장벽층 계면에서 III족 원소인 In, Al 및 Ga의 상호확산과 결함이 완화되는 현상으로 해석할 수 있다.