• The Journal of Korean Society for Radiation Therapy
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• v.20 no.1
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• pp.1-9
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• 2008

Purpose: For head and neck cancer patients treated with radiation therapy, proper immobilization of intra-oral structures is crucial in reproducing treatment positions and optimizing dose distribution. We produced a man-made tongue immobilization device for each patient subjected to this study. Reproducibility of treatment positions and dose distributions at air-and-tissue interface were compared using man-made tongue immobilization devices and conventional tongue-bites. Materials and Methods: Dental alginate and putty were used in producing man-made tongue immobilization devices. In order to evaluate reproducibility of treatment positions, all patients were CT-simulated, and linac-gram was repeated 5 times with each patient in the treatment position. An acrylic phantom was devised in order to evaluate safety of man-made tongue immobilization devices. Air, water, alginate and putty were placed in the phantom and dose distributions at air-and-tissue interface were calculated using Pinnacle (version 7.6c, Phillips, USA) and measured with EBT film. Two different field sizes (3$\times$3 cm and 5$\times$5 cm) were used for comparison. Results: Evaluation of linac grams showed reproducibility of a treatment position was 4 times more accurate with man-made tongue immobilization devices compared with conventional tongue bites. Patients felt more comfortable using customized tongue immobilization devices during radiation treatment. Air-and-tissue interface dose distributions calculated using Pinnacle were 7.78% and 0.56% for 3$\times$3 cm field and 5$\times$5 cm field respectively. Dose distributions measured with EBT (international specialty products, USA) film were 36.5% and 11.8% for 3$\times$3 cm field and 5$\times$5 cm field respectively. Values from EBT film were higher. Conclusion: Using man-made tongue immobilization devices made of dental alginate and putty in treatment of head and neck cancer patients showed higher reproducibility of treatment position compared with using conventional mouth pieces. Man-made immobilization devices can help optimizing air-and-tissue interface dose distributions and compensating limited accuracy of radiotherapy planning systems in calculating air-tissue interface dose distributions.

• Electrical & Electronic Materials
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• v.1 no.3
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• pp.269-277
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• 1988

P형 Si(100)로 제작한 MOS 커패시터에 $Co^{60}$-.gamma.선을 주사한 후 고주파 C-V특성 곡선으로 부터 방사선 조사에 의해 유발된 산화막안의 트랩전하의 거동 및 Si- $SiO_{2}$계면에서의 트랩밀도 분포의 변화를 검토하였다. 산화막 느랩전하는 .gamma.선 흡수선량 증가와 더불어 증가하다가 $10^{7}$ rad 부근에서부터 서서히 포화하는 경향이 나타났으며 게면트랩밀도의 분포모양은 흡수선량의 증가와 더불어 전형적인 이그러진 W자형에서 넓혀진 V자형 분포로 변화하였으나 최소값은 항상 진성페르미준위( $E_{i}$)부근에 있었으며 그 밀도는 1.0*$10^{11}$~7.5*$10^{11}$[개/$cm^{2}$/eV]로 계산되었다. 또한, 일정 바이어스전압하에서의 조사선량에 따른 $V_{fb}$ 의 변화는 현저하지는 않았으나 바이어스 전압을 +12V로 인가할 때 변화방향의 반전상태가 관측되었다. 그 이유로는 Si측의 계면 부근에서 일어난 눈사태 전자가 산화막내로 주입됨에 따라 도너형 양전하의 수가 감소되기 때문으로 추정되었다.되었다.

• The Journal of Korean Society for Radiation Therapy
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• v.23 no.1
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• pp.41-49
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• 2011

Purpose: This study is designed to investigate radiotherapic valuation of Paraffin Wax, which is newly formed for this study and generally utilized in dentistry, and Mouth Piece and Putty impression, which are commonly used in radiotherapy, for oral cavity as a compensator. Materials and Methods: Each compensator was formed by $10{\times}10{\times}1cm$ and measured radiation dose attenuation ratio with reference of water phantom which is made of tissue-equivalent materials. Two patients with oral cancer underwent DRR (Digitally Reconstructed Radiogrph) of Offline Review Program of Aria System and Portal vision for 5 times for each material to evaluate reproducibility by each filling materials. Moreover, MU (monitor unit) changes by dose absorption were considered in the case of inevitable implication of an filling materials in the range for radiotherapy. Results: Radiation dose attenuation ratios were shown -0.7~+3.7% for Mouth Piece, +0.21~+0.39% for Paraffin Wax and -2.71~-1.76% for Putty impression. Error ranges of reproducibility of positions were measured ${\pm}3mm$ for Mouth Piece, ${\pm}2mm$ for Paraffin Wax and ${\pm}2mm$ mm for Putty impression. Difference of prescription MU from dose absorption with an filling material increased +7.8% (250 MU) in Putty impression and -0.9% (230 MU) in Paraffin Wax as converted into a percentage from the standard phantom, Water 232 MU. Conclusion: Dose reduction of boundary between cavity and tissue was observed for Mouth Piece. Mouth Piece also had low reproducibility of positions as it had no reflection of anatomy of oral cavity even though it was a proper material to separate Maxilla and Mandible during therapy. On the other hand, Putty impression was a suitable material to correctly re-position oral cavity as before. However, it risked normal tissues getting unnecessary over irradiation and it caused radiation dose decrease by -2.5% for 1cm volume in comparison of it of water phantom. Dose reduction in Paraffin Wax, Fat Tissue-Equivalent Material, was smaller than other impressions and position reproducibility of it was remarkable as it was possible to make an anatomy reflected impression. It was also well fitted to oral cavity to transfer radiation dose planned in radiotherapy. Thus, Paraffin Wax will be an ideal material in radiotherapy for patients with oral cancer.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1992.11a
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• pp.123-127
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• 1992

When MOS devices is exposed to radiation, radiation effects of P-type MOS capacitor can cause modulation and/or degradation in devices characteristics and its operating life. The oxide layer is grown in $O_2$+T.C.E. and its thickness ranges from 40 to 80 nm. Irradiations on MOS capacitor were performed by Cobalt-60 gamma ray source and total dose ranges from $10^4$ to $10^8$ rads. The radiation effect on electrical conduction characteristics(I-V) in MOS capacitor was measured as a function of gate oxide thickness and total dose. From the experimental result, I-V characteristics is found to be influenced strongly by total dose in irradiated p-type MOS capacitors. The ohmic current is dependant on of total dose in irradiated P-type MOS capacitors. This results are explained using surface states at interface radiation-induced traps.

• Journal of the Korean Vacuum Society
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• v.14 no.2
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• pp.91-96
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• 2005

The silicon-on-insulator (SOI) wafer fabrication technique has been developed by using ion-cut process, based on proton implantation and wafer bonding techniques. It has been shown by SRIM simulation that 65keV proton implantation is required for a SOI wafer (200nm SOI, 400nm BOX) fabrication. In order to investigate the optimum proton dose and primary annealing condition for wafer splitting, the surface morphologic change has been observed such as blistering and flaking. As a result, effective dose is found to be in the $6\~9\times10^{16}\;H^+/cm^2$ range, and the annealing at $550^{\circ}C$ for 30 minutes is expected to be optimum for wafer splitting. Direct wafer bonding is performed by joining two wafers together after creating hydrophilic surfaces by a modified RCA cleaning, and IR inspection is followed to ensure a void free bonding. The wafer splitting was accomplished by annealing at the predetermined optimum condition, and high temperature annealing was then performed at $1,100^{\circ}C$ for 60 minutes to stabilize the bonding interface. TEM observation revealed no detectable defect at the SOI structure, and the interface trap charge density at the upper interface of the BOX was measured to be low enough to keep 'thermal' quality.

• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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• 2001.10a
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• pp.644-647
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• 2001

The investigations were discussed on the radiation effects of the electrical properties to the p-type MOS capacitors, which were irradiated by cobalt-60 gamma ray sources. The characteristics of capacitance-bias voltage(C-V) and of dielectric dissipation tarter-bias voltage(D-V) on the capacitors were measured at 1 [MHz] frequency. The microscopic behaviors of spate charges in oxide and silicon-silicon dioxide(Si- $SiO_2$) interface were investigated from the experimental data. The C-V characteristics are statical and convenient for the evaluation of the steady state behavior of carriers and interface states characteristics. While, the distribution and magnitude of space charges in oxide can be found out accurately on the $V_{dp}$ in D-V curves. The density of interface states can be deduced with ease from the magnitude of D-peak at depletion state. Thus, it is also concluded that the D-V curves are more useful and easier than conventional C-V curves for analysis of the microscopic and dynamic behavior of carriers in oxide and Si- $SiO_2$interface.

• Journal of Adhesion and Interface
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• v.20 no.2
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• pp.66-70
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• 2019

The surface of hydrophobic polypropylene (PP) fibers (spun-bonded fabric) was treated by an atmospheric plasma treatment method. These pre-treated hydrophilic PP fabrics were dip-coated in the aqueous poly(N-vinyl pyrrolidone) (PVP) solution. PVP layers on the surface of PP fiber were crosslinked by an irradiation of electron beam. The thickness of PVP hydrogels coated on the surface was easily controlled by changing the concentration of PVP in coating solution. The stepwise surface treatment, PVP coating, and hydrogel formation via electron beam irradiation were analyzed by the measurement of contact angle, scanning electron microscopy, and optical microscopy.

• Journal of the Korean Magnetics Society
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• v.12 no.5
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• pp.184-188
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• 2002

The Cu/Ni/Cu(002)/Si(100) films which have perpendicular magnetic anisotropy were deposited by e-beam evaporation methods. From the reflection high energy electron diffraction pattern, the films were confirmed to be grown epitaxially on silicon. After 2X lots ions/$\textrm{cm}^2$ C+ irradiation, magnetic easy-axis was changed from surface normal to in-plane as shown in the hysteresis loop of magneto-optical Kerr effects. It became manifest from analysis of X-ray reflectivity and grazing incident X-ray diffraction that even though interface between top Cu layer and Ni layer became rougher, the contrast of Cu and Ni's electron density became manifest after ion irradiation. In addition, the strain after deposition of the films was relaxed after ion irradiation. Strain relaxation related with change of magnetic properties and mechanism of intermixed layer's formation was explained by thermo-chemical driving force due to elastic and inelastic collision of ions.

• Journal of IKEEE
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• v.27 no.3
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• pp.303-307
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• 2023

In this paper, the creation of an Electron-Hole Pair due to Total Ionizing Dose (TID) effects inside the oxide of a Buried Channel Array Transistor (BCAT) device is induced, resulting in an increase in leakage current and threshold due to an increase in hole trap charge at the oxide interface. By comparing and simulating changes in voltage with the previously proposed Partial Isolation Buried Channel Array Transistor (Pi-BCAT) structure, the characteristics in leakage current and threshold voltage changed regardless of the increased oxide area of the Pi-BCAT device, compared to the asymmetrically doped BCAT structure. It shows superiority.

• Journal of the Institute of Electronics and Information Engineers
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• v.51 no.4
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• pp.221-226
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• 2014

In this paper, we achieved the study which determined the excellent diagnostic condition and searched the exposure condition with the minimum radiation exposure level having the equal diagnostic ability. To accomplish these study, chest phantom images with lesions and without ones were evaluated at various exposure conditions. With respect to the phantom with lesions and without ones, we obtained the chest PA imaging applied by photographing parts of DR apparatus and the images processed as histogram equalization and edge enhancement method. The images were acquired at the exposure conditions of 2.0, 2.5, 3.2, 4.0 and 5.0mAs. The morphological analysis was performed by ROC curves using the images obtained at each exposure condition. The exposure conditions with the most excellent diagnostic ability and with the equal diagnostic capability having the minimum radiation exposure level were determined by means of sensitivity, specificity and accuracy.