• Proceedings of the Korean Magnestics Society Conference
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• 2013.12a
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• pp.71-72
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• 2013

• Journal of the Korean Magnetics Society
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• v.8 no.4
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• pp.224-230
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• 1998

The relationships between R-H curves of gaint magnetoresistance (GMR) spin valve trilayer films and M-H curves of each magnetic layer consisting of the trilayer films were analyzed and simple formula representing the relations between the curves were suggested for theoretical analysis and study of magnetoresistance (MR) in those films, especially where the MR is from the difference of coercivity. Using two kinds of NiFe/Cu/Co films, which had been deposited on Cu(50 $\AA$)/Si(111, 4$^{\circ}$ tilt-cut) and Cu(50 $\AA$)/glass, R-H and M-H curves were measured and compared with the calculated ones, which were obtained by appying the M-H curves of single NiFe and Co films, deposited on the same substrates, to the previously reported single-domain and multi-domain models. The calcuated ones were well consistent with the measured ones and the suggested simple relationships between R-H and M-H curves are thought to be very useful for the deep understanding of MR behavior and the reasonable approach to improve MR properties in GMR spin valve trilayer films.

• Journal of the Korean Magnetics Society
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• v.17 no.5
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• pp.210-214
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• 2007

Recent years have seen a rapid development of spintronics. One of the major achievements of this field is the understanding of spin dependent process in various physical systems, for example, metallic multilayers showing the giant magnetoresistance (GMR). Today devices based on the GMR are revolutionizing electronic data storage. In this paper, we review recent developments in the research on GMR of low dimensional structures. We describe the magnetoresistance properties of magnetic multilayers, multilayered nanowires and nonopillars, etc.

• Electrical & Electronic Materials
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• v.14 no.5
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• pp.3-8
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• 2001

• Journal of the Korean Magnetics Society
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• v.27 no.3
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• pp.82-86
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• 2017

The IrMn based GMR-SV films with three different buffer layers were prepared on Corning glass by using ion beam deposition and DC magnetron sputtering method. The major and minor magnetoresistance curves for three different buffer layers beneath the structure of NiFe(15 nm)/CoFe(5 nm)/Cu(2.5 nm)/CoFe(5 nm)/NiFe(7 nm)/IrMn(10 nm)/Ta(5 nm) at room temperature have shown different magnetoresistance properties. When the samples were annealed at $250^{\circ}C$ in vacuum, the magnetoresistance ratio, the coercivity of pinned ferromagnetic layer, and the interlayer coupling field of free ferromagnetic layer were enhanced while the exchange bias coupling field did not show noticeable changes.

• Journal of the Korean Magnetics Society
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• v.23 no.3
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• pp.98-103
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• 2013

The magnetic easy axis of the ferromagnetic layer for the dual-type GMR-SV (giant magnetoresistance-spin valve) having NiFe/Cu/NiFe/IrMn/NiFe/Cu/NiFe multuilayer structure controlled by the post annealing treatment. The magnetoresistive curves of a dual-type IrMn based GMR-SV depending on the direction of the magnetic easy axis of the free and the pinned layers are measured by the different angles for the applied fields. By investigating the switching process of magnetization for an arbitrary measuring direction, the optimum annealing temperature having a steady and isotropy magnetic sensitivity of 2.0 %/Oe was $105^{\circ}C$. This result suggests that the in-plane orthogonal magnetization for the dual-type GMR-SV film can be used by a high sensitive biosensor.

• Journal of the Korean Magnetics Society
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• v.13 no.6
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• pp.243-245
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• 2003

The anomalous angular modulation of magnetoresistance in Co/Cu multilayers is explained assuming substrate-induced magnetic anisotropy. The magnetic parameters of Co/Cu multilayers is determined using angular modulation of magnetoresistance and theoretical model including substrate-induced anisotropy. This mechanism introduces a new possible way of modulating the giant magnetoresistance.

• Proceedings of the Korean Magnestics Society Conference
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• 2002.12a
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• pp.102-103
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• 2002

LaMnO$_3$에 Ca을 치환한 Mn계 perovskite 구조(ABO3)의 물질에서 초거대자기저항 현상이 발견된 이후 R$_{1-x}$$^{3+}$ A$_{x}$$^{2+}$MnO$_3$(R=La, Nd, Pr: 희토류금속, A=Ca, Sr, Ba, Cd, Pb; 2가 양이온)계의 Mn 산화물의 연구가 고감도 자기 저항 센서와 자기기록 등의 활용가능성을 중심으로 활발히 진행되고 있다. 자기적 특성이 뛰어난 초거대자기저항물질에 대한 미시적인 자성에 대한 연구는 그 메커니즘이 복잡하고 다양한 접근방식에 따른다. (중략)

• Ceramist
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• v.4 no.5
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• pp.44-51
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• 2001

• Journal of the Korean Magnetics Society
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• v.5 no.3
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• pp.222-232
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• 1995

자기저항이란 외부 자기장에 의해 재료의 전기저항이 변화되는 현상을 일컫는다. Au와 같은 비자성도체 및 반도체 재료의 경우 외부에서 자기장이 가해지면 전도 전자가 Lorentz 힘을 받아 궤적이 변하므로 저항이 변화한다. 이러한 저항 변화 를 정상 자기저항(Ordinary Magnetoresistance, OMR)이라 하며 일반적으로 상당히 작은 저항의 변화를 나타낸다. 강자성도체 재료에서는 정상 자기저항 효과 외에도 부가적인 효과가 생긴다. 이는 스핀-궤도 결합에 기인한 효과로써 자기 저항은 강자성체의 자화용이축, 외부자계와 잔류간의 각도에 의존하며 이방성 자기저항(Anisotropic Magnetoresistance, AMR)이라 한다. AMR 비(%)는 일반적 으로 다음과 같이 정의된다. 즉 ${\Delta}{\rho}_{AMR}/{\rho}_{ave}=(\rho_{\|}-\rho_{T})/{\rho}_{ave}$로 여기서 $\rho_{\|}$는 자기장의 방향이 전류의 방향과 같을 때의 비저항 이고 $\rho_{T}$는 서로 수직일 때이며 ${\rho}_{ave}=(\rho_{\|}-\rho_{T})/3$이다. 기존의 MR 센서나 자기재생헤드(magnetic read head)에 사용되는 퍼머로이계 합금의 AMR 비는 상온에서 약 2% 정도의 저항변화를 보인다.