• Clean Technology
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• v.11 no.3
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• pp.123-128
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• 2005

Among various metal oxides semiconductors, $TiO_2$ is the most studied semiconductor for environmental clean-up applications due to its unique ability in photocatalyzing various organic contaminants, its chemical inertness, and nontoxicity. $TiO_2$, however, has a few drawbacks to be solved such as reactivity mainly working under ultraviolet irradiation (${\lambda}$ < 387 nm) and electron - hole recombination on $TiO_2$. In this study, to extend the absorption range of $TiO_2$ into the visible range and enhance electron - hole separation, we synthesized platinum (Pt) deposited $C-TiO_2$. The presence of Pt as an electron sink has been known to snhance the separation of photogenerated electron-hole pairs and induce the thermal decomposition. The characterization of as-synthesized $Pt-C-TiO_2$ was performed by Transmission Electron Microscopic (TEM), the Brunuer-Emmett-Teller (BET) method, X-ray Diffractometer (XRD), UV-vis spectrometer (UV-DRS), and X-ray Photoelectron Spectroscopy (XPS). In order to estimate the photocatalytic activity of the synthesized materials, the photoelectron Spectroscopy (XPS). In order to estimate the photocatalytic activity of the synthesized materials, the photodegradation experiment of an azo dye (Acid Red 44; $C_{10}H_7N=NC_{10}H_3(SO_3Na)_2OH$)was carried out by using an Xe arc lamp (300 W, Oriel). A 420 nm cut-off filter was used for visible light irradiation. From the results, Pt-deposited $C-TiO_2$ showed a far superior phothdegradation activity to Degussa P25, the commercial product under the irradiation of visible light and enhanced photocatalytic activity of visible-working $C-TiO_2$. This is a useful result into the application for the purification system of dye wastewater using visible energy of sun light.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.16 no.2
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• pp.59-65
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• 2006

Al-doped and F-doped ZnO (ZnO : Al & ZnO : F) thin films were coated onto glass substrate by sol-gel method. These films showed c-axis orientation in common, but different I(002)/[I(002) + I(101)] and FWHM (full width at half-maximum). In particular, the grain size of the ZnO : Al films decreased with the increase in the Al-doping concentration, while for the ZnO : F films the grain siae increased up to F 3 at% and then decreased. For the electrical properties, Hall effect measurement was used. The resistivity of the ZnO : Al films and the ZnO : F films were, respectively, $2.9{\times}10^{-2}{\Omega}cm$ at Al 1 at% and $3.3{\times}10^{-1}{\Omega}cm$ at F 3 at%. Moreover compared with ZnO:Al films, ZnO:F films have lower carrier concentration (ZnO : Al $4.8{\times}10^{18}cm^{-3}$, ZnO : F $3.9{\times}10^{16}cm^{-3}$) and higher mobility (ZnO : Al $45cm^2/Vs$, ZnO : F $495cm^2/Vs$). For average optical transmittances, ZnO : Al thin films have $86{\sim}90%$ and ZnO : F films have $77{\sim}85%$ comparatively low.

• Journal of the Korean Vacuum Society
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• v.22 no.3
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• pp.119-125
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• 2013

In this study, we studied the properties of ZnO(Al) and ZnO(AlGa) thin film according to film thickness deposited on SLG by In-line magnetron sputtering system. XRD, FESEM, 4-point probe, Hall measurement system and UV/Vis-NIR spectrophotometer were employed to analyze the properties of ZnO(Al) and ZnO(AlGa) thin film. The all films exhibited (002) preferential orientation with clear peak shape and high intensity. The carrier concentration and Hall mobility of ZnO(Al) and ZnO(AlGa) thin film were improved with increasing thickness. The resistivity of both films decreased when the film thickness was raised from 500 nm to 1,450 nm. And then relatively the resistivity of ZnO(AlGa) film was lower than that of ZnO(Al) film. The transmittance of the films decreased with increasing film thickness but all films exhibited optical transmittances of over 83.3% in the visible region.

• Journal of Korean Ophthalmic Optics Society
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• v.10 no.3
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• pp.185-191
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• 2005

Photo-reactive $TiO_2$ thin films on soda-lime-silica slide glass were prepared by spin coating technique with a Ti-naphthenate precursor. Optical, structural and photo-catalytic properties of the films after annealing at $500^{\circ}C{\sim}600^{\circ}C$ were evaluated. As increase with annealing temperature, absorption bands and total transmittance of the films showing an average transmittance (about 80%) at visible spectra range were shifted to UV spectra range and slightly decreased. Refractive index and thickness of the films were increased from 2.16 to 2.63 and decreased from 484 nm to 439 nm, respectively, with increase of annealing temperature. Anatase phase was visible at all annealing temperature. More rougher surface structure was obtained at $600^{\circ}C$ than those of films annealed at $500^{\circ}C$ and $550^{\circ}C$. The hydrophilic conversion was found within 45 min by UV stimulation and optical activation was UVC>UVA>UVB at the case of $500^{\circ}C{\sim}550^{\circ}C$ and UVA>UVC>UVB at the annealing temperature of $600^{\circ}C$. The lowest initial contact angle was obtained at $600^{\circ}C$.

• Journal of Bio-Environment Control
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• v.5 no.1
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• pp.23-33
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• 1996

This study was performed to induce a quality improvement and standardization of materials used for greenhouse. For this purpose, physical and mechanical properties of agricultural films for greenhouse were measured by kinds and thickness of the films. The properties are composed of impact, tensile, tear propagation strength and light transmittance. The results were summarized as follows. 1. At the impact test result of the falling dart, the thicker the film, the greater the impact strength of soft film. The impact weight at 50 percents is from 158g to 213g and the strength of low density polyethylene(LDPE) film is higher than the rest of any other films. 2. Seeing the leveling of the impact rupture, maximum impact weight which was ruptured very little ranges from 62g to 192g. The impact strength of 0.1mm films was higher than that of 0.05mm as from 1.8 to 3.2 times. 3. Tensile weight covers from 0.95kg to 2.22kg in the test materials, and the weight of lengthwise film is larger than that of width. LDPE film has high value of tensile weight. Elongation range is from 345 to 102 percent and lengthwise elongation is greater than width as much as from 1.4 to 2.7 times. 4. Tea. propagation strength ranges from 80.5kg/cm to 121.7kg/cm, and unlike which of LDPE film has high value, EVA film has low value in the films tested. The width strength is higher than the lengthwise. 5. The light transmittance of the soft film is about 78-92 percent in the range of ultraviolet ray, but has high value in the visible ray range.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.10 no.3
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• pp.271-277
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• 2000

Transparent $TiO_2$ thin films were prepared by the sol-gel method from titanium alkoxide aqueous solution containing large quantities of water. To prepare the aqueous system sol, the chelate compound solution were prepared from each 1 mole of titanium(IV)iso-propoxide, acetylacetone and 8 moles of isopropyl-alcohol. And then the 50 moles aqueous solution with the 0.02~0.50 moles of HCI for sol stability and the 0.3 mole of polyethylene glycol for coating adhesion were precisely dropped on the chelate compound solution. $TiO_2$thin films were fabricated by dip coating, drying and heat treatment at $400^{\circ}C$ and their characteristics were investigated by XRD, SEM and UV-visible spectrometer, The neutral sol of composition with TTIP : AcAc : IPA : $H_2O$ : PEG : HCl = 1 : 1 : 8 : 50 : 0.3 : 0.15 (molar ratio) was maintained stable sol condition and without problem for coating more than 30 days. The anatase phase $TiO_2$thin film prepared from 30 times dipping, drying and heat treating showed the flat surface and the fine microstructure of fracture surface with about 2 $\mu\textrm{m}$ thickness. Transparency of these $TiO_2$thin film was 80 % in the visible region.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.22 no.3
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• pp.122-126
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• 2012

The properties of Al-doped ZnO (AZO) films were investigated as a function of $H_2/(Ar+H_2)$ gas ratio using an AZO (2 wt% $Al_2O_3$) ceramic target in a radio frequency (RF) magnetron sputtering system. The deposition process was done at $200^{\circ}C$ and in $2{\times}10^{-2}$ Torr working pressure and with various ratios of $H_2/(Ar+H_2)$ gas. During the AZO film deposition process, partial $H_2$ gas affected the AZO film characteristics. The electron resistivity (${\sim}9.21{\times}10^{-4}\;{\Omega}cm$) was lowest and mobility (${\sim}17.8\;cm^2/Vs$) was highest in AZO films when the $H_2/(Ar+H_2)$ gas ratio was 2.5 %. When the $H_2/(Ar+H_2)$ gas ratio was increased above 2.5 %, the electron resistivity increased and mobility decreased with increasing $H_2/(Ar+H_2)$ gas ratio in AZO films. The carrier concentration increased with increasing $H_2/(Ar+H_2)$ gas ratio from 0 % to 7.5 %. This phenomenon was explained by reaction of hydrogen and oxygen and additional formation of oxygen vacancy. The average optical transmission in the visible light wavelength region over 90 % and an orientation of the deposition was [002] orientation for AZO films grown with all $H_2/(Ar+H_2)$ gas ratios.

• Proceedings of the Korean Vacuum Society Conference
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• 2011.08a
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• pp.259-259
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• 2011

염료감응형 태양전지(Dye-Sensitized Solar Cells:DSSC)는 환경 친화적이며, 저가의 공정에 대한 가능성으로 기존의 고가의 결정질 실리콘 태양전지의 경제적인 대안으로 각광을 받고 있다. 최근 염료감응형 태양전지는 투명 전도성 산화막(Transparent Conducting Oxide : TCO)으로 사용되는 Fluorine Tin Oxide (FTO)가 증착된 유리기판 위에 주로 제작된다. FTO는 낮은 비저항과 가시광선 영역에서 높은 투과도를 가지는 우수한 전기-광학적 특성을 갖지만, 비교적 공정이 까다로운 Chemical Vapor Deposition (CVD)법으로 제조하며, 전체 공정비용의 60%를 차지하는 높은 생산단가로 인해 현재 FTO를 대체할 재료개발 연구가 활발히 진행되고 있다. 그 중 ZnO (Zinc Oxide)는 우수한 전기-광학적 특성과 비교적 저렴한 가격으로 새로운 TCO로써 주목받고 있다. ZnO는 넓은 energy band gap (3.4 [eV])의 육방정계 울자이트(hexagonal wurtzite) 결정 구조를 가지는II-VI족 n형 반도체 물질이며, III족 금속원소인 Al, Ga 및 In 등의 불순물을 첨가하면 TCO로서 우수한 전기-광학적 특성과 안정성을 나타낸다. 이들 물질중 $Zn^{2+}$ (0.060 nm)의 이온반경과 유사한 $Ga^{2+}$0.062 nm) 이온이 ZnO의 격자반경을 최소화 시킬 수 있다는 장점으로 최근 주목 받고 있다. 하지만 Ga-doped ZnO (GZO)의 경우 DSC에 사용되는 루테늄 계열의 산성 염료 하에 장시간 두면 표면이 파괴되는 문제가 발생하며, $TiO_2$ paste를 Printing 후 열처리하는 과정에서도 박막의 파괴가 발생할 수 있다. 이를 방지하기 위해 $TiO_2$ Blocking Layer를 GZO 투명전극 위에 증착하였다. 또한, $TiO_2$ Blocking Layer를 적용한 GZO 박막을 전면전극으로 이용하여 DSC를 제작하여 효율을 확인하였다. 2wt%의 $Ga_2O_3$가 도핑된 ZnO 박막은 20mTorr 400$^{\circ}C$에서 Pulsed Laser Deposition (PLD)에 의해 성장되었고, $TiO_2$박막은 Ti 금속을 타겟으로 이용하여 30mTorr 400$^{\circ}C$에서 증착되었다. Scanning electron microscopy (FE-SEM)을 이용한 박막 분석 결과 $TiO_2$가 증착된 GZO 박막의 경우 표면 파괴가 일어나지 않았다. Solar Simulator을 이용하여 I-V특성 측정결과 상용 FTO를 사용한 DSC 수준의 효율을 나타내었다. 이에 따라 Pulsed Laser Deposition을 이용해 제작된 GZO 기판은 $TiO_2$ Blocking Layer를 이용하여 표면 파괴를 방지할 수 있었으며, 이는 향후 염료감응형 태양전지의 투명전극에 적용 가능 할 것으로 판단된다.

• Korean Journal of Optics and Photonics
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• v.16 no.2
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• pp.168-173
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• 2005

Ag-doped $TiO_2$ thin films were prepared by RF magnetron co-sputtering method, and their physical and chemical properties were examined as a function of calcination temperature. XRD results showed that the crystallite size of Ag-doped films was smaller than that of the $TiO_2$ thin films. SEM results showed that the particle size of $Ag/TiO_2$ film was smaller and more uniform than pure $TiO_2$ film. The films had high transparency in the visible range. The films calcined at $600^{\circ}C$ were the anatase phase, and the films calcined at $900^{\circ}C$ were a mixture of anatase and rutile phases. The absorption edge of films calcined at $900^{\circ}C$ was red-shifted. This is due to the augmented absorption resulting from the phase transformation from anatase to rutile phase. And the transmittance of films decreased by the light scattering and absorption in the films. Photocatalytic activity of $Ag/TiO_2$ thin films was higher than that of the pure $TiO_2$ thin films.

• Journal of the Korea Academia-Industrial cooperation Society
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• v.20 no.6
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• pp.80-85
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• 2019

Vanadium dioxide is a well-known metal-insulator phase transition material. Lots of researches of vanadium redox flow batteries have been researched as large scale energy storage system. In this study, vanadium oxide($VO_x$) thin films were applied to cathode for lithium ion battery. The $VO_x$ thin films were deposited on Si substrate($SiO_2$ layer of 300 nm thickness was formed on Si wafer via thermal oxidation process), quartz substrate by RF magnetron sputter system for 60 minutes at $500^{\circ}C$ with different RF powers. The surface morphology of as-deposited $VO_x$ thin films was characterized by field-emission scanning electron microscopy. The crystallographic property was confirmed by Raman spectroscopy. The optical properties were characterized by UV-visible spectrophotometer. The coin cell lithium-ion battery of CR2032 was fabricated with cathode material of $VO_x$ thin films on Cu foil. Electrochemical property of the coin cell was investigated by electrochemical analyzer. As the results, as increased of RF power, grain size of as-deposited $VO_x$ thin films was increased. As-deposited thin films exhibit $VO_2$ phase with RF power of 200 W above. The transmittance of as-deposited $VO_x$ films exhibits different values for different crystalline phase. The cyclic performance of $VO_x$ films exhibits higher values for large surface area and mixed crystalline phase.