• Bulletin of the Korean Chemical Society
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• v.26 no.11
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• pp.1728-1734
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• 2005

The interactions of Cu(II)-meso-Tetrakis(n-N-methylpyridiniumyl)porphyrin (n = 2,3,4), respectively referred to as o-, m- and p-CuTMPyP, and DNA, poly$[d(A-T)_2]$ and poly$[d(G-C)_2]$ were investigated by circular and linear dichroism (CD and LD). In the o-CuTMPyP case, in which the rotation of the pyridinium ring is prevented, the shape of the CD spectrum when associated to DNA and poly$[d(A-T)_2]$ resembles and is characterized by a positive band at a low drug to DNA concentration ratio (R ratio) and is bisignate at a high R ratio. The former CD spectrum shape has been attributed to porphyrin that is bound monomerically outside of DNA while the latter can be attributed to those that are stacked. When o-CuTMPyP is bound to poly$[d(G-C)_2]$, the excitonic CD appeared at a relatively high R ratio. In contrast, a characteristic negative CD band in the Soret region was apparent for both m- and p-CuTMPyP when bound to DNA and poly$[d(G-C)_2]$ at the low R ratios, indicating that the porphyrin molecule intercalates. However, the DNA is bent near the intercalation site and the plane of the porphyrin molecule tilts relative to the DNA helix axis, as judged by the magnitude of the reduced LD. Various stacking patterns were identified by the shape of the CD spectrum for m- and p-CuTMPyP when bound to poly$[d(A-T)_2]$. Three species for the former complex and two for the latter complex were found which may reflect the extent of the stacking.

• Proceedings of the Korean Society Of Semiconductor Equipment Technology
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• 2002.11a
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• pp.85-90
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• 2002

$RuO_2$/GaN and related contacts were investigated for Schottky contacts in GaN-Based optical and electronic devices. We demonstrated that an $RuO_2$ film forms a stable Schottky contact on a GaN layer with a barrier height (${\Phi}_B$) of 1.46 eV and transmittance of 70% in the visible and near UV region. $RuO_2$/GaN Schottky diode showed a breakdown at over -50V and leakage current of only 0.3 nA at -5V. The $RuO_2$/GaN Schottky type photodetector had the UV/Visible rejection ratio of over $10^5$ and the responsivity of 0.23 A/W at 330 nm. The $RuO_2$ gate AlGaN/GaN EFET exhibited high drain current ($I_d$) of 689.3 mA/mm and high transconductance ($g_m$) of 197.4 mS/mm. Cut-Off frequency ($f_t$) and maximum operating frequency ($f_{max}$) were measured as 27.0 GHz and 45.5 GHz, respectively.

• Proceedings of the Korean Institute of Surface Engineering Conference
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• 2014.11a
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• pp.14-14
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• 2014

STT-MRAM의 구성물질인 magnetic tunnel junction의 효과적인 식각을 위하여 다양한 가스 조합을 연구하였다. 그 결과 $CH_4/N_2O$ gas 조합보다는 $CH_3OH$ gas 가 보다 향상된 식각 특성을 나타내었고 pulse duty ratio 변화와 기판온도 변화가 식각특성 향상에 영향을 주었음을 알 수 있었다.

• Journal of the Microelectronics and Packaging Society
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• v.21 no.1
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• pp.13-17
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• 2014

The direct-patternable $SnO_2$ thin film was successfully fabricated by photochemical metal-organic deposition. The composition and chemical bonding state of $SnO_2$ thin film were analyzed by using X-ray photoelectron spectroscopy (XPS) from the surface to the interface with Si substrate. XPS depth profiling analysis allowed the determination of the atomic composition in $SnO_2$ film as a function of depth through the evolution of four elements of C 1s, Si 2p, Sn 3d, and O 1s core level peaks. At the top surface, nearly stoichiometric $SnO_2$ composition (O/Sn ratio is 1.92.) was observed due to surface oxidation but deficiency of oxygen was increased to the interface of patterned $SnO_2/Si$ substrate where the O/Sn ratio was about 1.73~1.75 at the films. This O deficient state of the film may act as an n-type semiconductor and allow $SnO_2$ to be applied as a transparent electrode in optoelectronic applications.

• Proceedings of the KSME Conference
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• 2004.11a
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• pp.1128-1133
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• 2004

A comprehensive experimental and numerical study has been conducted to understand the influence of $CH_{3}Cl$ addition on $CH_{4}/O_{2}/N_{2}$ premixed flames under the oxygen enrichment. The laminar flame speeds of $CH_{4}/CH_{3}Cl/O_{2}/N_{2}$ premixed flames at room temperature and atmospheric pressure are experimentally measured using Bunsen nozzle flame technique, varying the amount of $CH_{3}Cl$ in the fuel, the equivalence ratio of the unburned mixture, and the level of the oxygen enrichment. The flame speeds predicted by a detailed chemical kinetic mechanism employed are found to be in excellent agreement with those deduced from experiments. As $CH_{3}Cl$ addition is increased temperature at the postflame is not almost varied but the heat release rate and $EI_{NO}$ are decreased. The function of $CH_{3}Cl$ as inhibitor on hydrocarbon flames becomes weakened as the level of the oxygen enrichment is increased from 0.21 to 0.5.

• Journal of the Korean Ceramic Society
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• v.31 no.2
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• pp.220-226
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• 1994

The hydrolysis and condensation reactions in the mixed alkoxide solutions of Si(OC2H5)4 and Zr(O-nC3H7)4 with various water contents (1, 2, 4, and 8 in molar ratio to alkoxide, r) and catalysts were examined by rheological measurements and the number average molecular weight in order to explain the shape of the polymer in the mixed alkoxide solutions. It was found that fibers could be drawn in the viscosity range of 1∼100P from the acid-catalyzed solutions with lower water contents of the mole ratio H2O/alkoxide, r 2. On the other hand, crack free bulk gel was formed from the acid-catalyzed solutions including a large amount of water (r 4), and the base-catalyzed solutions. The relation between the intrinsic viscosity [{{{{ eta }}] and the number average molecular weight n, namely [{{{{ eta }}]=Knα, has shown that the acid-catalyzed spinnable solutions (r=1 and 2) have linear polymers and the exponent α's are about 0.56 and 0.81, whereas non-spinnable solutions (r=4 and 8) have three dimensional network polymers or spherical particles and the exponent α's are 0.41∼0.51 and 0.35.

• Journal of the Korean Ceramic Society
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• v.41 no.3
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• pp.197-201
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• 2004

SiO$_2$ and SiON thick films were deposited by Plasma Enhanced Chemical Vapor Deposition (PECVD) technique on silicon wafer (100) using SiH$_4$ and $N_2$O as precursor gases. In this work, the influence of rf power, and rf bias power on the optical and physical properties of SiO$_2$ and SiON thick films is presented. The refractive index decreases with increasing rf power, and rf bias power. The refractive index of the films varied from 1.4493 to 1.4952 at wavelength at 1552 nm, with increasing rf power, the nitrogen content decreases while the oxygen content increases, in a manner that the O/N ratio increases approximately linearly.

• Journal of IKEEE
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• v.27 no.4
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• pp.399-404
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• 2023

In this paper, we analyzed the current path in the O/N/O (Oxide/Nitride/Oxide) structure of 3D NAND Flash memory and in the O/N/F (Oxide/Nitride/Ferroelectric) structure where the blocking oxide is replaced by a ferroelectric. In the O/N/O structure, when V_read is applied, a current path is formed on the backside of the channel due to the E-fields of neighboring cells. In contrast, the O/N/F structure exhibits a current path formed on the front side due to the polarization of the ferroelectric material, causing electrons to move toward the channel front. Additionally, we performed an examination of device characteristics considering channel thickness and channel length. The analysis results showed that the front electron current density in the O/N/F structure increased by 2.8 times compared to the O/N/O structure, and the front electron current density ratio of the O/N/F structure was 17.7% higher. Therefore, the front current path is formed more effectively in the O/N/F structure than in the O/N/O structure.

• Membrane Journal
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• v.17 no.3
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• pp.254-268
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• 2007

Sodium type faujasite(FAU) zeolite layers with diverse materials characteristics(Si/Al ratio, thickness, and structural discontinuity) were hydrothermally grown on a porous $\alpha-Al_2O_3$ tube, and then the $CO_2/N_2$ separation was evaluated at $30^{\circ}C$ for an equimolar mixture of $CO_2$ and $N_2$. Among hydrothermal conditions, $SiO_2$ content in hydrothermal solution seriously affected materials characteristics: with an increment in the $SiO_2$ content, Si/Al ratio, thickness, and structural discontinuity of grown FAU zeolite layer simultaneously increased. The present study reveals that structural discontinuity(intercrystalline voids due to an incomplete densification and cracks induced by GIS Na-P1 phase) is the most important variable affecting the $CO_2/N_2$ separation. Also, it was suggested that the $CO_2$ desorption in permeate side be the rate-determining(slowest) step in the overall $CO_2$ permeation.

• 한국연소학회:학술대회논문집
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• 2001.11a
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• pp.90-96
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• 2001

Catalytic ignition of $H_2/O_2/CO_2$ mixtures over platinum catalyst is experimentally investigated by using microcalorimetry. For comparison, $N_2$ and Ar is also used as diluent gas. The gas mixture flows toward platinum foil heated by electric current at atmosphere pressure and ambient temperature. The ignition temperature range 350-445K according to the fuel ratio, dilution ratio and diluent gas. It increases as the fuel ratio and dilution ratio increase. $H_2/O_2$ mixture with $CO_2$ ignites at higher temperature than with other diluents by 30-50K. Several experimental evidences show the inhibition effects of $CO_2$ in $H_2-O_2$ heterogeneous reaction is considerable