• Korean Journal of Materials Research
• /
• v.17 no.2
• /
• pp.61-67
• /
• 2007

The magnetron reactive sputtering was adopted to deposit CuO buffer layers on the polyimide surfaces for increasing the adhesion strength between Cu thin films and polyimide, varying $O_2$ gas flow rate from 1 to 5 sccm. The CuO oxide was formed through all the $O_2$ gas flow rates of 1 to 5 sccm, showing the highest value at the 3 sccm $O_2$ gas flow rate. The XPS analysis revealed that the $Cu_2O$ oxide was also formed with a significant ratio during the reactive sputtering. The adhesion strength is mainly dependent on the amount of CuO in the buffer layers, which can react with C-O-C or C-N bonds on the polyimide surfaces. The adhesion strength of the multi-layered Cu/buffer layer/polyimide specimen decreased linearly as the heating temperature increased to $300^{\circ}C$, even though there showd no significant change in the chemical state at the polyimide interface. This result is attributed to the decrease in surface roughness of deposited copper oxide on the polyimide, when it is heated.

• Journal of the Microelectronics and Packaging Society
• /
• v.20 no.4
• /
• pp.25-30
• /
• 2013

Pb-free ferroelectric $(Na_{0.5}Bi_{0.5})TiO_3$ (NBT) thin films were prepared by a modified sol-gel process. Their structural, dielectric and pyroelectric properties were investigated as a function of the excess Na/Bi ratio and the annealing temperature. In the case of thin films containing no excess Na and Bi, only partial amounts of the perovskite NBT were crystallized, where the films consisted mainly of the pyrochlore phase of $Bi_2Ti_2O_7$ for annealing conditions of $600{\sim}800^{\circ}C$. With increasing excess Na/Bi ratio, the proportion of the perovskite phase effectively increased due to the compensation of the volatile Na and Bi components. For a Na/Bi ratio of 2.0, the thin film with single NBT perovskite phase was obtained within XRD detection limit after annealing at $700^{\circ}C$ for 10 min and it showed the excellent dielectric properties, ${\varepsilon}r$ of ~550 and tan ${\delta}$ of 0.03. While these properties were degraded for Na/Bi ratio of 2.5 despite the existence of pure perovskite phase. The NBT thin film with Na/Bi ratio of 2.0 are also promising candidates for applications requiring pyroelectric devices because it was found to have pyroelectric coefficients of $1.3{\sim}7nC/cm^2K$ in the temperature range of $30{\sim}100^{\circ}C$.

• Journal of the Korean Ceramic Society
• /
• v.34 no.10
• /
• pp.1021-1026
• /
• 1997

RuO2 thin film has reasonably good conductivity and stiffness and it is thought to substitute for the cantilever beam made up of Pt and Si3N4 double layers in microactuators. Therefore, anisotopic Si etching was performed using RuO2 thin film as a mask layer in 25 wt. % TMAH water solution. In the etching temperature ranging from 6$0^{\circ}C$ to 75$^{\circ}C$, the etch rates of all the crystallographic directions increased linearly as the etching temperature increased. The etch rate ratio(selectivity) of [111]/[100] which varied from 0.08 to 0.14, was not sensitive to temperature. The activation energies for [110] direction, [100] direction and [111] direction were 0.50, 0.66 and 1.04eV, respectively. RuO2 cantilever beam with a clean surface was formed at the etching temperatures of 6$0^{\circ}C$ and $65^{\circ}C$. But the damages due to formation of pin holes on RuO2 surface were observed beyond 7$0^{\circ}C$. The tensile stress of RuO2 thin films caused the cantilever bending upward. As a result, it was demonstrated that the formation of conducting oxide RuO2 cantilever beam which can replace the role of an electrode and supporting layer could be possible by TMAH solution.

• Journal of the Korean Solar Energy Society
• /
• v.39 no.1
• /
• pp.33-40
• /
• 2019

Al-doped ZnO (AZO) thin films were synthesized on Si(100) wafers via plasma enhanced metal organic chemical vapor deposition (PE-MOCVD) method using diethyl zinc (DEZ) and N-methylpyrrolidine alane (MPA) as precursors. Effects of Al/Zn mixing ratio, plasma power on the surface morphology, crystal structure, and electrical property were investigated with SEM, XRD and 4-point probe measurement respectively. Growth rate of the film decreased slightly with increasing the Al/Zn mixing ratio, however electrical property was enhanced and resistivity of the film decreased greatly about 2 orders from $9.5{\times}10^{-1}$ to $8.0{\times}10^{-3}{\Omega}cm$ when the Al/Zn mixing ratio varied from 0 to 9 mol%. XRD analysis showed that the grain size increased with increasing the Al/Zn mixing ratio. Growth rate and electrical property were enhanced in a mild plasma condition. Resistivity of AZO film decreased down to $7.0{\times}10^{-4}{\Omega}cm$ at an indirect plasma of 100 W condition which was enough value to use for the transparent conducting oxide (TCO) material.

• Journal of the Korean Institute of Telematics and Electronics
• /
• v.26 no.7
• /
• pp.73-82
• /
• 1989

We developed a photo-CVD equipment for the deposition of silicon based insulating materials. Silicon dioxide thin films were deposited at various process conditions especially low temperature range $50-250^{\circ}C$. Low pressure mercury lamp was used in the direct excitation of $SiH_4/N_2O$ mixture gas without mercury sensitization. AES and ESCA analysis showed that oxygen to silicon atomic ratio and binding state of Si-O bond was nearly 2.0 and $SiO_2$ type, respectively. The refractive indices were measured to be 1.39-1.44, indicating that films were in relatively low density.

• Journal of the Korea Academia-Industrial cooperation Society
• /
• v.14 no.7
• /
• pp.3570-3576
• /
• 2013

This paper calculated advanced sewage treatment efficiency and reduction pollution loads to estimation contribution ratio of for community sewerage in Hongcheon-gun County. The A2/O and SBR methods showed overall high treatment efficiency of 95% and 94% respectively, and SS was 80%. On the other hand, T-N and T-P showed relatively low processing efficiency of 56% and 60% respectively, but it was observed that SS showed high 96% in the MBR method. Next, by the result of yearly water change analysis on water quality of Hongcheon River which is the discharge river of community sewerage, it was observed that water quality was greatly deteriorated by COD, T-N and T-P. However, installation and operation of community sewerage showed high pollution load reduction in general water quality item by more than 80%, and in T-N and T-P by 58% and 68% respectively. It is expected that community sewerage will greatly contribute in water quality improvement of Hongcheon River.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
• /
• v.22 no.10
• /
• pp.821-825
• /
• 2009

Recently, transparent ZnO-based TFTs have attracted much attention for flexible displays because they can be fabricated on plastic substrates at low temperature. We report the fabrication and characteristics of ZnO TFTs having different channel thicknesses deposited at low temperature. The ZnO films were deposited as active channel layer on $Si_3N_4/Ti/SiO_2/p-Si$ substrates by RF magnetron sputtering at $100^{\circ}C$ without additional annealing. Also, the ZnO thin films deposited at oxygen partial pressures of 40%. ZnO TFTs using a bottom-gate configuration were investigated. The $Si_3N_4$ film was deposited as gate insulator by PE-CVD at $150^{\circ}C$. All Processes were processed below $150^{\circ}C$ which is optimal temperature for flexible display and were used dry etching method. The fabricated devices have different threshold slop, field effect mobility and subthreshold slop according to channel thickness. This characteristics are related with ZnO crystal properties analyzed with XRD and SPM. Electrical characteristics of 60 nm ZnO TFT (W/L = $20\;{\mu}m/20\;{\mu}m$) exhibited a field-effect mobility of $0.26\;cm^2/Vs$, a threshold voltage of 8.3 V, a subthreshold slop of 2.2 V/decade, and a $I_{ON/OFF}$ ratio of $7.5\times10^2$.

• Asian Journal of Turfgrass Science
• /
• v.22 no.2
• /
• pp.141-148
• /
• 2008

This study was conducted to investigate nutrient content at shoot and root(contained runner in zoysiagrass) in creeping bentgrass, kentucky bluegrass and zoysiagrass before turfgrass dormancy. The shoot ratio of dry weight in creeping bentgrass, kentucky bluegrass and zoysiagrass was 12%, 27% and 25% and root ratio was 88%, 73% and 75%, respectively. The orders of nutrients contained in turf-grass were N>K>Ca>P>Mg>Na in plant tissues. The proportion of nutrients in tissue of creeping bentgrass, kentucky bluegrass and zoysiagrass was 17%, 28% and 34% in shoot and 83%, 72% and 66% in root, respectively. These results showed that nutrients in turf-grass tissue was contained more than 70% in root before grasses dormancy. In turf grass management, all grasses were required to fertilize sufficiently N, $K_2O$, CaO and $P_2O_5$ before winter.

• Journal of Mushroom
• /
• v.10 no.1
• /
• pp.9-14
• /
• 2012

This study was carried out to investigated optimum mixing ratio of Korean natural Lindera glauca for production of functional oyster mushroom. Total nitrogen and carbon source of Lindera glauca was 0.16% and 40.9%, respectively and C/N ratio was 215. Total nitrogen source and pH of substrate mixed with Lindera glauca was 2.8~3.0 and 4.8~5.0, respectively. The contents of $P_2O_5$, CaO, MgO and $Na_2O$ were increased by increasing Lindera glauca, but there was no significant difference in $K_2O$ content. Mycerial growth was faster at Lindera glauca treatments than that of control. Yields of fruiting body was the highest at Lindera glauca 20%, and dimeter and thick of pileus were increased according to increase of Lindera glauca addition ratio. The L value of pileus was the highest at the Lindera glauca 10% during mushroom harvest, but there was no significant difference in the a-value and the b-value.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 1995.11a
• /
• pp.44-47
• /
• 1995

In this study, dielectric and piezoelectric properties of 0.4[0.1Bi(Ni$\_$1/2/Ti$\_$1/2/)O$_3$0.9Pb(Ni$\_$1/3/Nb$\_$2/3/)O$_3$]-0.6(PbZr$\_$y/Ti$\_$1-y/)O$_3$ceramics with Zr/Ti ratio were observed. As a results, structure of the ceramics with ZrO$_2$(y) 0.425 and 0.45 was MPB. Electromechanical coupling coefficients k$\_$p/, k$\_$31/ of the BN$\_$162/ specimen were 57.2%, 35.6% and piezoelectric constants d$\_$33/, d$\_$31/ were 720, 298[x10$\_$-12/C/N).