• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
• /
• 2013.05a
• /
• pp.772-775
• /
• 2013

We have grown a p-GaN film on sapphire by MOCVD and explored the post-annealing effort on the film after depositing a $2500{\AA}$ thick $SiO_2$ protective layer on it. By etching the $SiO_2$ protective film after the heat treatment, the hole concentration was measured, and compared with the data values before the heat treatment. In addition to the concentration, the hole mobility was also monitored while varying the atmospheric gas ratio of $N_2$ and $O_2$, the rapid thermal annealing temperatures ($750^{\circ}C$ and $650^{\circ}C$) and times (1 to 15 min.) In order to investigate the optical and structural properties of the film, room temperature and low temperature PL measurements were conducted.

• The Journal of Natural Sciences
• /
• v.8 no.1
• /
• pp.47-51
• /
• 1995

Several intermediate glasses are investigated to bond the alumina and the hydroxyapatite (HAp). The chemical compositions of the intermediate glasses are chosen as $CaO-Al_2O_3$. The mole ratio of CaO/$Al_2O_3$ is changed from 0.5 to 3.0. The lowest melting is observed at $1355^{\circ}C$ in the specimen of CaO/$Al_2O_3$ at the mole ratio of 2. With increasing contents of $Al_2O_3$, the melting temperatures gradually increase and a number of pores are observed. The sectional microstructure shows that the good wetability is observed in higher contents of CaO specimens. This implies that the good wetability is obtained in the mole ratio range of CaO/$Al_2O_3geq2$. The phase transformations are observed after treatment but the major peaks of HAp still exist.

• Journal of the Korean Magnetics Society
• /
• v.16 no.5
• /
• pp.240-244
• /
• 2006

In this paper, magnetic properties and annealing behavior of spin valve structures using Mo(MoN) layers as underlayers were studied varying the thickness of the underlayers. The spin valve structure was consisted of Si substrate/$SiO_2(2,000{\AA})/Mo(MoN)(t{\AA})/NiFe(21\;{\AA})/CoFe(28\;{\AA})/Cu(22\;{\AA})/CoFe(18\;{\AA})/IrMn(65\;{\AA})/Ta(25\;{\AA})$. Also, MoN films were deposited on Si substrates and their thermal annealing behavior was analyzed. The resistivity of the MoN film increased as the $N_2$ gas flow rate was increased. After annealing at $600^{\circ}C$, XRD results did not show peaks of silicides. XPS results indicated MoN film deposited with 5 sccm of $N_2$ gas flow rate was more stable than the film deposited with 1 sccm of $N_2$ gas flow rate. The variations of MR ratio and magnetic exchange coupling fold were small for the spin valve structures using Mo(MoN) underlayers up to thickness of45 ${\AA}$. MR ratio of spin valves using MoN underlayers deposited with various $N_2$ gas flow rate was about 7.0% at RT and increased to about 7.5% after annealing at $220^{\circ}C$. Upon annealing at $300^{\circ}C$, the MR ratio decreased to about 3.5%. Variation of $N_2$ gas flow rate up to 5 sccm did not change the MR ratio and $H_{ex}$ appreciably.

• Proceedings of the KIEE Conference
• /
• 2004.11a
• /
• pp.72-74
• /
• 2004

In this study, we used a inductively coupled plasma (ICP) source for etching $Al_2O_3$ thin films because of its high plasma density, low process pressure and easy control bias power. $Al_2O_3$ thin films were etched using $Cl_2/BCl_3$, $N_2/Cl_2/BCl_3$, and Ar/$Cl_2/BCl_3$ plasma. The experiments were carried out measuring the etch rates and the selectivities of $Al_2O_3$ to $SiO_2$ as a function of gas mixing ratio, rf power, and chamber pressure. When $Cl_2$ 50% was added to $Cl_2/BCl_3$ plasma, the etch rate of the $Al_2O_3$ films was 118 nm/min. We also investigated the effect of gas addition. In case of $N_2$ addition, the etch rate of the $Al_2O_3$ films decreased while $N_2$ was added into $Cl_2/BCl_3$ plasma. However, the etch rate increased slightly as Ar added into $Cl_2/BCl_3$ plasma, and then further increase of Ar decreased the etch rate. The maximum etch rate was 130 nm/min at Ar 20% in $Cl_2/BCl_3$ plasma, and the highest etch selectivity was 0.81 in $N_2$ 20% in $Cl_2/BCl_3$ plasma. And, we obtained the results that the etch rate increases as rf power increases and chamber pressure decreases. The characteristics of the plasmas were estimated using optical emission spectroscopy (OES).

• Proceedings of the PSK Conference
• /
• 2003.10b
• /
• pp.94.2-94.2
• /
• 2003

CJ-11668 is a new potent and selective COX-2 inhibitor. CJ-11668 showed COX-2 inhibition (IC50) of 65nM and selectivity ratio (COX-l/COX-2) of 770 in the cell based assay. In the human whole blood assay, CJ-11668 showed COX-2 inhibition (IC50) of 370nM and selectivity ratio (COX-l/COX-2), 135. The treatment of CJ-11668 (5 mg/kg, p.o) produced a significant inhibition (35%) of inflamed rat paw volume in the carrageenan-induced acute inflammation. CJ-11668 also suppressed the PGE2 level (69% inhibition, 1 mg/kg, p.o) in the zymosan-induced mouse air pouch model after 3 hrs. (omitted)

• Journal of the Korea Academia-Industrial cooperation Society
• /
• v.19 no.1
• /
• pp.69-74
• /
• 2018

With the increasing development of industrial society and the availability of high quality electrical energy, the simplification of operation and maintenance procedures is required, in order to ensure the reliability and safety of electrical systems. In this paper, the dielectric breakdown characteristics of $N_2-O_2$ mixed gas solid insulation, which is used as an alternative to SF6 in various electric power facilities, are verified. When the gas mixture has a composition ratio similar to that of the atmosphere, the dielectric breakdown characteristics are relatively stabilized. It was confirmed that the breakdown voltage of the gas in the electrode near an equal electric field increased with increasing pressure according to Paschen's rule. The breakdown voltage of the surface increased linearly with increasing pressure, and the difference was caused by the mixing ratio of $O_2$ gas. This change in the surface insulation breakdown voltage was caused by the influence of the electrically negative $O_2$ gas and the intermolecular collision distance. In this study, the influence of the intermolecular impact distance was larger (than that in the absence of the electrically negative $O_2$ gas). The breakdown voltage relation applicable to Teflon according to the surface insulation characteristics was calculated. The characteristics of the surface insulation properties of Teflon, which is used as a solid insulation material, were derived as a function of pressure. It is thought that these results can be used as the basic data for the insulation design of electric power facilities.

• Journal of the Korean institute of surface engineering
• /
• v.25 no.5
• /
• pp.235-252
• /
• 1992

(Ti, Al)N films were deposited on 304 stainless steel sheet by D.C. magnetron sputtering using Al target and Ti plate. The high temperature oxidation of (T, Al)N films with the variation of composition has been investigated. The chemical composition of (Ti, Al)N films with the variation of composition has been investigated. The chemical composition of (Ti, Al)N films was similar to the sputter area ratio of titanium to aluminum target by means of EDS and AES survey. The high temperature oxidation test of (Ti, Al)N showed that (Ti, Al)N has better high temperature resistance than TiN and TiC films. TiC films were cracked at 40$0^{\circ}C$ in air TiN films quickly were oxidised at $600^{\circ}C$, were spalled more than $700^{\circ}C$. But (Ti, Al)N films are relatively stable to$ 900^{\circ}C$. The good resistance to high temperature oxida-tion of (Ti, Al)N films are due to the formation of dense Al2O3 and TiO2 oxide layer. Especially, Al2O3 oxide layer is more important. The results obtained from this study show, it is believe that the (Ti, Al)N film by D.C. magnetron sputtering is promising for the use of high temperature and wear resistance mate-rials.

• Bulletin of the Korean Chemical Society
• /
• v.31 no.9
• /
• pp.2593-2597
• /
• 2010

Second-order rate constants ($k_N$) have been measured spectrophotometrically for reactions of 2,4-dinitrophenyl X-substituted benzoates (X = 4-MeO, H and 4-$NO_2$) with a series of Z-substituted pyridines in 80 mol % $H_2O$/20 mol % DMSO at $25.0{\pm}0.1^{\circ}C$. The Br${\o}$nsted-type plots exhibit downward curvature (e.g., $\beta_2$ = 0.89 ~ 0.96 when $pK_a$ < 9.5 while $\beta_1$ = 0.38 ~ 0.46 when $pK_a$ > 9.5), indicating that the reaction proceeds through a stepwise mechanism with a change in rate-determining step (RDS). The ${pK_a}^o$, defined as the $pK_a$ at the center of Br${\o}$nsted curvature, has been analyzed to be 9.5 regardless of the electronic nature of the substituent X in the benzoyl moiety. Dissection of $k_N$ into the microscopic rate constants $k_1$ and $k_2/k_{-1}$ ratio has revealed that $k_1$ is governed by the electronic nature of the substituent X but the $k_2/k_{-1}$ ratio is not. Theoretical calculations also support the argument that the electronic nature of the substituent X in the benzoyl moiety does not influence the $k_2/k_{-1}$ ratio.

• Proceedings of the IEEK Conference
• /
• 2000.06b
• /
• pp.318-321
• /
• 2000

We showed that the change of Ar to $N_2$flow during the TiN deposition by the reactive sputtering decides the crystallinity of LPCVD W, as well as the electrical properties of the W-TiN/SiO$_2$Si capacitor. In particular, the threshold voltage can be controlled by the Ar to $N_2$ratio. As compared to the results obtained from the LPCVD W/SiO$_2$/Si MOS capacitor, the insertion of approximately 50 nm TiN film effectively prohibits the fluorine diffusion during the deposition and annealing of W films, resulting in negligible leakage currents at the low electric fields.

• Transactions on Electrical and Electronic Materials
• /
• v.13 no.1
• /
• pp.6-9
• /
• 2012

In this study, we carried out an investigation of the etching characteristics (etch rate, selectivity to $SiO_2$) of ZnO thin films in $N_2/Cl_2$/Ar inductivity coupled plasma. A maximum etch rate and selectivity of 108.8 nm/min and, 3.21, respectively, was obtained for ZnO thin film at a $N_2/Cl_2$/Ar gas mixing ratio of 15:16:4 sccm. The plasmas were characterized by optical emission spectroscopy. The x-ray photoelectron spectroscopy analysis showed the efficient destruction of oxide bonds by ion bombardment. An accumulation of low volatile reaction products on the etched surface was also shown. Based on this data, an ion-assisted chemical reaction is proposed as the main etch mechanism for plasmas containing $Cl_2$.