• Title/Summary/Keyword: [$320{\times}256$] 초점면배열

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Fabrication of High Performance and Low Power Readout Integrated Circuit for $320{\times}256$ IRFPA ($320{\times}256$ 초점면배열 적외선 검출기를 위한 고성능 저 전력 신호취득회로의 제작)

  • Kim, Chi-Yeon
    • Journal of the Korea Institute of Military Science and Technology
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    • v.10 no.2
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    • pp.152-159
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    • 2007
  • This paper describes the design, fabrication, and measurement of ROIC(ReadOut Integrated Circuit) for $320{\times}256$ IRFPA(InfraRed Focal Plane Array). A ROIC plays an important role that transfer photocurrent generated in a detector device to thermal image system. Recently, the high performance and low power ROIC adding various functions is being required. According to this requirement, the design of ROIC focuses on 7MHz or more pixel rate, low power dissipation, anti-blooming, multi-channel output mode, image reversal, various windowing, and frame CDS(Correlated Double Sampling). The designed ROIC was fabricated using $0.6{\mu}m$ double-poly triple-metal Si CMOS process. ROIC function factors work normally, and the power dissipation of ROIC is 33mW and 90.5mW at 7.5MHz pixel rate in the 1-channel and 4-channel operation, respectively.

Fabrication of [320×256]-FPA Infrared Thermographic Module Based on [InAs/GaSb] Strained-Layer Superlattice ([InAs/GaSb] 응력 초격자에 기초한 [320×256]-FPA 적외선 열영상 모듈 제작)

  • Lee, S.J.;Noh, S.K.;Bae, S.H.;Jung, H.
    • Journal of the Korean Vacuum Society
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    • v.20 no.1
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    • pp.22-29
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    • 2011
  • An infrared thermographic imaging module of [$320{\times}256$] focal-plane array (FPA) based on [InAs/GaSb] strained-layer superlattice (SLS) was fabricated, and its images were demonstrated. The p-i-n device consisted of an active layer (i) of 300-period [13/7]-ML [InAs/GaSb]-SLS and a pair of p/n-electrodes of (60/115)-period [InAs:(Be/Si)/GaSb]-SLS. FTIR photoresponse spectra taken from a test device revealed that the peak wavelength (${\lambda}_p$) and the cutoff wavelength (${\lambda}_{co}$) were approximately $3.1/2.7{\mu}m$ and $3.8{\mu}m$, respectively, and it was confirmed that the device was operated up to a temperature of 180 K. The $30/24-{\mu}m$ design rule was applied to single pixel pitch/mesa, and a standard photolithography was introduced for [$320{\times}256$]-FPA fabrication. An FPA-ROIC thermographic module was accomplished by using a $18/10-{\mu}m$ In-bump/UBM process and a flip-chip bonding technique, and the thermographic image was demonstrated by utilizing a mid-infrared camera and an image processor.