• Journal of Sensor Science and Technology
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• v.29 no.4
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• pp.243-248
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• 2020

In this study, we applied transition-frequency modulation to prevent the flickering of light-emitting diodes (LEDs) in visible light communication (VLC). In the VLC transmitter, rectangular waveforms with transition frequencies of four and two in each bit time were used for the high and low bits, respectively, in the non-return-to-zero data. In the VLC receiver, an RC-high-pass filter (HPF) was used to eliminate the interference of the 120 Hz noise light from the adjacent lighting lamps, and an SR-latch circuit was used to recover the transmitted signal using spikes from the output of the RC-HPF. This configuration is useful for constructing VLC systems that are flicker-free and resistant to adjacent noise light interference.

• Proceedings of the KIEE Conference
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• 1997.11a
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• pp.476-478
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• 1997

A new speed detection method using low resolution incremental encoders, especially excellent in the low speed region and in the transient state, is proposed. The half period error of an incremental encoder is greater than the period error. So it's not recommended to quadruple the number of pulses per revolution, because it increase the ripple of speed. To overcome this restriction a speed detection, method has been proposed. But it requires so many latch circuits. Therefore we propose a new speed detection method that has different concept and has fewer latch circuits.

• Transactions of the Korean Society of Machine Tool Engineers
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• v.15 no.6
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• pp.121-126
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• 2006

Snap-fit is being used in manufacture of plastic products. Integral features using snap-fit are classified as locks, locators and enhancements. Locking features complete the process of attachment by providing physical interference to prevent separation. Looking feature pairs consist of two components, i.e., a flexible latch and a rigid catch and require particular care and attention for their selection. We can make several locking feature pairs by selecting latch and catch, but some parts restrict freedom of selection. Therefore, part designers must know the characteristic properties of generic locking feature forms as considering a specific design problem. In this paper, it has been presented about problem of small size products using locking feature and then introduced new locking feature applicable to small parts.

• 한국컴퓨터산업교육학회:학술대회논문집
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• 2003.11a
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• pp.79-82
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• 2003

The electrothermal simulation of high voltage LIGBT(Lateral Insulated Gate Bipolar Transistor) in thin Silicon on insulator (SOI) and Silicon on sapphire (SOS) for thermal conductivity and sink is performed by means of MEDICI. The finite element simulations demonstrate that the thermal conductivity of the buried oxide is an important parameter for the modeling of the thermal behavior of silicon-on-insulator (SOI) devices. In this paper, using for SOI LIGBT, we simulated electrothermal for device that insulator layer with $SiO_2$ and $Al_2O_3$ at before and after latch up to measured the thermal conductivity and temperature distribution of whole device and verified that SOI LIGBT with $Al_2O_3$ insulator had good thermal conductivity and reliability.

• Journal of the Korea Institute of Military Science and Technology
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• v.11 no.3
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• pp.161-168
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• 2008

The deployable space structure is necessary to minimize the satellite volume and launch cost. For the deployment, passive deployment mechanism has widely been used to attenuate a latch shock induced when the structure is just fully deployed. To reduce the latch shock, viscous damper is applied to the passive deployment mechanism and it can control the deployment speed of the structure. In this paper, dynamic analysis of the deployable space structure using the passive deployment mechanism with the viscous damper has been performed. The viscous damping values have been optimized through numerical simulation. The satellite's attitude influenced by pyro activation for the release of the structure has also been investigated.

• Proceedings of the Korean Information Science Society Conference
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• 2000.10a
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• pp.30-32
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• 2000

최근 메타데이타의 주요 논쟁점으로 메타데이타의 표준화 문제가 등장하고 있다. 새로운 표준화 방향으로 인한 메타데이타의 확장성은 기존 메타데이타 관리 기법의 변화를 요구하게 되었다. 즉, 사용자의 질의에 대한 신속한 정보 제공과 동적인 자료의 일관성 있는 저장과 유지방 안을 필요로 한다. 이에 본 논문에서는 디지털 라이브러리 환경에서 메타데이타 속성을 정의하고, 이러한 요구사항을 만족하는 병행수행 제어 기법인 2VL(Two Version using the Latch)을 제안한다. 2VL은 래치를 사용하여 2버전을 유지함으로써 판독과 기록 연산간의 충돌로 인한 지연을 최소화하며 판독 연산에 있어서의 빠른 응답시간과 높은 최근성 반영율을 보인다.

• Journal of the Korean Society for Precision Engineering
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• v.33 no.8
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• pp.655-660
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• 2016

Self-closing drawers are used in high-end products, such as furniture, home appliances, and a range of other storage devices. In this study, a self-closing mechanism is proposed. A system consisting of a friction latch, constant force spring, rotary damper with rack, and pinion is developed. The retracting drawer can be latched at any position and can be reactivated by simple touch. The constant force spring and rotary damper offer smooth closing action. The ergonomic quality of the closing action is quantified by an index based on velocity-time behavior. The effects of various design parameters are analyzed with a dynamics model and experimentally validated by prototype testing.

• The Transactions of the Korean Institute of Electrical Engineers C
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• v.49 no.9
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• pp.523-526
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• 2000

A dual gate trench emitter IGBT structure is proposed and studied numerically using the device simulator MEDICI. The on-state forward voltage drop latch-up current density turn-off time and breakdown voltage of the proposed structure are compared with those of the conventional DMOS-IGBT and trench gate IGBT structures. The proposed structure forms an additional channel and increases collector current level resulting in reduction of on -state forward voltage drop. In addition the trench emitter increases latch-up current density by 148% in comparison with that for the conventional DMOS-IGBT and by 83% compared with that for the trench gate IGBT without degradation in breakdown voltage when the half trench gate width(Tgw) and trench emitter depth(Ted) are fixed at $1.5\mum\; and\; 2\mum$, respectively

• Journal of Power Electronics
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• v.12 no.6
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• pp.947-953
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• 2012

The latch-up immunity of the high voltage power clamps used in high voltage ESD protection devices is very becoming important in high-voltage applications. In this paper, a stacking structure with a high holding voltage and a high failure current is proposed and successfully verified in 0.18um CMOS and 0.35um BCD technology to achieve the desired holding voltage and the acceptable failure current. The experimental results show that the holding voltage of the stacking structure can be larger than the operation voltage of high-voltage applications. Changes in the characteristics of the stacking structure under high temperature conditions (300K-500K) are also investigated.

• Proceedings of the KIEE Conference
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• 2007.07a
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• pp.1315-1316
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• 2007

This is paper, a new structure to effectively improve the Vce(sat) voltage and latch-up current in NPT type IGBTs with hole barrier layer and diverter. The hole barrier layer acts as a barrier to prevent the holes from flowing into the p-layer and stores them in the n-layer. And the diverter significantly reduce hole current from flowing into the p-layer and improve latch up current. Analysis on the Breakdown voltage shows identical values compared to existing Conventional IGBT structures. This shows an improvement on Vce(sat) and Latct-up current without lowering other characteristics of the device. The electrical characteristics were studied by MEDICI simulation results.