• Korean Journal of Materials Research
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• v.5 no.7
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• pp.816-819
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• 1995

(Ba$_{1-x}$ , Sr$_{x}$)TiO/$_3$thin films on Pt/Ti/SiO$_2$/Si substrates were prepared by LP MOCVD(Low Pressure Metal-Organic Chemical Vapor Deposition). The crystalinity of BST deposit had a (100) preferred orientation with increasing deposition temperature due to surface diffusion. BST films deposited at 90$0^{\circ}C$ showed a dielectric constant of 365 and a dissipation factor of 0.052 at a frequency of 100kHz. The chance of capacitance of the films with applied voltage was small, showing paraelectric properties. BST film deposited at 90$0^{\circ}C$ had a charge storage density of 60 fc/${\mu}{\textrm}{m}$$^2$at a field of 0.2MV/cm and the leakage current density of 20 nA/$\textrm{cm}^2$ at a field of 0.15 MV/cm.cm.

• 한국초전도학회:학술대회논문집
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• v.9
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• pp.185-188
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• 1999

Biepitaxial Y$_1Ba_2Cu_3O_{7-x}$ (YBCO) and La$_{0.2}Sr_{0.8}MnO_3$ (LSMO) thin films have been prepared on SrTiO$_3$ buffer layer and MgO seed layer grown on Al$_2O_3$(11${\bar{2}}$0)substrates by dc-sputtering with hollow cylindrical targets, respectively. We charaterized Josephson properties and significantly large magnetoresistance in YBCO and LSMO films with 45$^{\circ}$ grain boundary junction, respectively. The observed working voltage (I$_cR_n$) at 77 K in grain boundary junction was below 10${\mu}$V, which is typical I$_cR_n$ value of single biepitaxial Josephson junction. The field magnetoresistance ratio (MR) of LSMO grain boundary juncoon at 77K was enhanced to 13%, which it was significant MR value with high magnetic field sensitivity at a low field of 250 Oe. These results indicate that inserting the insulating layer instead of the grain boundary layer with metallic phase can be possible to apply a new SIS Josephson junction and a novel magnetic device using spin-polarized tunneling junction.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2002.07b
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• pp.1148-1151
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• 2002

Dielectric ceramics with nominal composition of $(Ba_{0.93}Sr_{0.07}O)-0.5Sm_2O_3-4.5TiO_2$ was prepared using the conventional mixed oxide process-derived powder. Effect of $SiO_2$, $MnO_2$ and $Al_2O_3$ impurity addition on the microwave properties was examined in some detail. Measured relative permittivity $(\varepsilon_r)$ values were in the range of 53 to 59 and showed little dependence on impurity addition. In contrast, quality factor $(Q{\cdot}f)$ and temperature coefficient of resonant frequency $(\tau_f)$ values were greatly influenced by the type and the amount of impurities. It was found that 0.1~0.2wt% addition of $Al_2O_3$ was most effective for improving the properties, where ${\varepsilon}_r$, $Q{\cdot}f$ and $\tau_f$ values were 57.7, 10000, and +7ppm/$^{\circ}C$, respectively.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2005.11a
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• pp.202-203
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• 2005

To recognize whether admixture affects some $(Ba_{0.6}Sr_{0.4})TiO_3$, powder in this research $Li_2CO_3$, MgO, $MnO_2$ adding each 3 wt % by Tape casting method thick film make. Sitering temperature lowered 1300$^{\circ}C$ adding $Li_2CO_3$, and density is 5.942g/$cm^3$, and specific inductive capacity increases about decuple and displayed 4000. Climbed sitering temperature 1400$^{\circ}C$ adding MgO, specific inductive capacity reduced 1/2 times. Lowered sintering temperature 1325$^{\circ}C$ low adding $MnO_2$.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.13 no.1
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• pp.28-32
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• 2000

Structural and electrical properties of (Ba, Sr)TiO\ulcorner (BST) thin films prepared by pulsed laser depositon were investigated to verify the influences of post-annealing in oxygen ambient. Increase of post-anneal-ing time in oxygen ambient resulted in not only grain growth but also improvement of crystallinity of BST films. Although the post-annealing in oxygen ambient resulted in the increase of surface roughness, it assisted the dielectric constant increase by eliminating oxygen vacancies. The electrical property enhancement including high dielectric constant and low leakage current density was associated with introducing high pressure of oxygen during the post-annealing.

• Proceedings of the KIEE Conference
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• 1994.11a
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• pp.190-192
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• 1994

Microwave dielectric properties of $0.15(Ba_xSr_{0.05})O-0.15(Sm_{2(1-y)}Nd_{2y})O_3-0.7TiO_2$ ($x=0.9{\sim}1.0[mol.]$, y=6[m/0]) and $0.15(Ba_{0.95}Sr_{0.05})O-0.15(Sm_{2(1-y)}Nd_{2y})O_3-zTiO_2$(y=6[m/o], $z=0.66{\sim}0.7[mol.]$) ceramics were investigated with the contents of BaO and $TiO_2$. In the specimen with contents of BaO (0.975[mol.]), dielectric constant, quality factor and temperature coefficient of resonant frequency have good values of 76.52, 3001(at 3[GHz]), +0.71[ppm/$^{\circ}C$], respectively. In the specimen with contents of $TiO_2$(0.69[mol.]), dielectric constant, quality factor and temperature coefficient of resonant frequency showed the maximum values of 80.89, 3057(at 3[GHz]), +26.12[ppm/$^{\circ}C$], respectively.

• Journal of the Korean Institute of Telematics and Electronics A
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• v.33A no.2
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• pp.114-121
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• 1996

Thin film Ba$^{0.7}Sr^{0.3}TiO^{3}$ (BST) capacitors were fabricated on SiO$_{2}$/Si substrates by RF magnetron sputtering method and characterized at microwave frequencies ranging from 40 MHz to 1GHz to examine the dielectric dispersion of the capacitors. The BST thin films were electrode material of BST thin films capacitor which is known as one of the best electrode materials for BST films. 50$\AA$-thick titanium (Ti) layers were introduced to increase adhesion between bottom Pt and SiO$_{2}$. The leakage current density of the capacitors was about 1.7${\times}10^{7}A/cm^{2}$ at 1.5V and the dielectric constant was about 140 at 1MHz. Microwave measurement patterns having a coplanar waveguide type were fabricated and their S parameters were measured using network analyzer. After de-embedding parasitic components in microwave measurement patterns nearly frequency-invariant dielectric constant of about 120 was extracted in the measurement range of 40 MHz to 1 GHz.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.35 no.5
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• pp.516-521
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• 2022

We investigated the microstructure, crystal structure, dielectric, and elecromechanical strain properties of lead-free BaTiO₃ (BT)-modified (Bi_1/2Na_1/2)TiO₃-SrTiO₃ (BNT-ST) piezoelectric ceramics. Samples were prepared by a conventional ceramic processing route. Temperature dependent dielectric properties confirmed that a phase transition from a nonergodic relaxor to an ergodic relaxor was induced when the BT concentration reached 1.5 mol%, interestingly, where the average grain size reached a maximum value of 4.5 ㎛. At the same time, enhanced electromechanical strain (S_max/E_max = 600 pm/V) was obtained. It is suggested that the induced ferroelectric-relaxor phase transition by the BT modification is responsible for the enhancement of electromechanical strain in 1.5 mol% BT-modified BNT-ST ceramics.

• Korean Journal of Materials Research
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• v.16 no.12
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• pp.747-753
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• 2006

(BaSr)$TiO_3$ (BST) thick films were prepared by tape casting method, using $BaTiO_3$ and $SrTiO_3$ powder slurry and their dielectric properties were investigated. With an additive, $Li_2CO_3$, the sintering temperature was lowered by $200^{\circ}C$. Sintering density was 5.7 g/$cm^3$ and the BST thick films exhibited a maximum dielectric constant, tunability at temperatures near phase transition point. Whilst their characteristics were deteriorated above the phase transition temperature, they were unchanged below the phase transition temperature, which is presumedly due to the acceleration of $90^{\circ}$ domain formation, its contribution to the relaxation of internal stress and the increase in sintering according to the replacement of Li.

• The Transactions of the Korean Institute of Electrical Engineers C
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• v.55 no.12
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• pp.555-559
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• 2006

Using the $Ba_{0.5}Sr_{0.5}TiO_3$(BST) powders prepared by the Sol-Gel method, the BST thick films were fabricated on the $Al_2O_3 $substrates coated with Pt by the screen printing method. Compared with pure BST thick films, the structural and dielectric properties of the BST thick films doped with $1{\sim}10$ wt % MgO were investigated. It was observed that the Mg substitution into BST causes a shift in the cubic-tetragonal BST phase transition peak to a lower temperature. The microstructure of the BST substituted with Mg was homogeneous and dense. Mg substitution into BST had a significant effect on the grain size reduction. Dielectric constant was decreased with increasing the MgO content and temperature. In the case of BST thick films doped with 1 wt% MgO, the relative permittivity and dielectric loss were 1581 and 1.4 % at 1 MHz.