• 제목/요약/키워드: (Ba, Sr)TiO$_3$

검색결과 494건 처리시간 0.021초

${Li_2}{CO_3}$와 MgO가 첨가된 ${Ba_{0.5}}{Sr_{0.5}}{TiO_3}$의 결정학적 전기적 특성 (Crystalline and electrical properties of ${Li_2}{CO_3}$ and MgO doped ${Ba_{0.5}}{Sr_{0.5}}{TiO_3}$ composites)

  • 유희욱;박용준;남송민;구상모;박재영;이영희;고중혁
    • 대한전기학회:학술대회논문집
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    • 대한전기학회 2006년도 추계학술대회 논문집 전기물성,응용부문
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    • pp.3-4
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    • 2006
  • ${Li_2}{CO_3}$ and MgO doped paraelectric ${Ba_{0.5}}{Sr_{0.5}}{TiO_3}$, materials were prepared and compared for LTCC applications. In these days LTCC (Low Temperature Co-fired Ceramics) technology has been widely employed for electronic modules for the communication systems such as front-end modules, antenna modules, and switching modules. In this paper, 1 ${\sim}$ 5 wt % of ${Li_2}{CO_3}$, and 30 wt % of MgO were added to ${Ba_{0.5}}{Sr_{0.5}}{TiO_3}$, respectively. The crystalline properties and electrical properties will be compared and discussed.

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MgO를 첨가한 $Ba_xSr_{1-x}TiO_3$ 후막의 소결거동과 가변 유전특성 (Effect of Sintering and Tunable Dielectric Properties of BST Thick Films with MgO addition)

  • 전소현;김인성;송재성;윤존도
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 2006년도 추계학술대회 논문집 Vol.19
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    • pp.205-206
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    • 2006
  • (BaSr)$TiO_3$ thick films were prepared by tape casting method, using $BaTiO_3$ and $SrTiO_3$ powder slurry in order to investigate dielectric properties. With MgO additives, the sintering density was 5.8 $g/cm^3$ and the BST sample exhibited the maximum dielectric constant, tunability at temperatures near phase transition point. Dielectric loss be on the decrease because the interface is not a pore. BST sample be applicable on tunable device.

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저온 액상 소결제 B$_2$O$_3$ 첨가에 의한 $Ba_{0.7}$Sr$_{0.3}$TiO$_3$ 세라믹스의 소결거동 및 유전 강유전 특성변화 (Effect of B$_2$O$_3$ Addition on the Sintering Behavior Dielectric and Ferroelectric Properties of $Ba_{0.7}$Sr$_{0.3}$TiO$_3$Ceramics)

  • 임성민;홍석민;박홍진;김옥경
    • 한국세라믹학회지
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    • 제36권7호
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    • pp.767-772
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    • 1999
  • The effect of B2O3 addition on the sintering behavior dielectric and ferroelectric properties of Ba0.7Sr0.3TiO3 ceramics were investigated. The sample with 0.5wt% B2O3 was sintered under 115$0^{\circ}C$. The dielectric and ferroelectric properties of BST with 0.5wt% B2O3 was as good as BST without B2O3 sintered at 135$0^{\circ}C$ and its dielectric loss was even better When B2O3 was added over 1.0wt% the overdoped B2O3 remained in the specimens and formed a second phase which degraded the sintering behaivor dielectric properties of BST.

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기판온도에 따른 (Ba,Sr)TiO$_3$ 박막의 구조와 유전특성 (The Structure and Dielectric Properties of the (Ba,Sr)TiO$_3$ Thin Films with the Substrate Temperature)

  • 이상철;이문기;이영희
    • 대한전기학회논문지:전기물성ㆍ응용부문C
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    • 제49권11호
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    • pp.603-608
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    • 2000
  • $(Ba, Sr)TiO_{3}$[BST] thin films were fabricated on the Pt/TiO$_2$/SiO$_2$/Si substrate by the RF sputtering. The structure and dielectric properties of the BST thin films with the substrate temperature were investigated. Increasing the substrate temperature, The BST phase increased and barium multi titanate phases decreased. Increasing the frequency, the dielectric constant decreased and the dielectric loss increased. The dielectric constant and dielectric loss of the BST thin films deposited at 50$0^{\circ}C$ were 300 and 0.018, respectively at 1 kHz. The leakage current density of the BST thin films deposited at 50$0^{\circ}C$ was $10^{-9}$ A/$\textrm{cm}^2$ with applied voltage of 3V. Because of the high dielectric constant(300), low dielectric loss(0.018) and low leakage current($10^{-9}$ A/$\textrm{cm}^2$), BST thin films deposited at 50$0^{\circ}C$ is expecting for the application of DRAM.

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RF Magnetron Sputtering을 이용한 $Ba_{0.5}Sr_{0.5}TiO_3$박막 커패시터의 제작과 전기적 특성에 관한 연구 (Investigation on manufacturing and electrical properties of$Ba_{0.5}Sr_{0.5}TiO_3$thin film capacitors using RE Magnetron Sputtering)

  • 이태일;박인철;김홍배
    • 한국진공학회지
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    • 제11권1호
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    • pp.1-7
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    • 2002
  • RF Magnetron Sputtering 방법으로 $Ba_{0.5}Sr_{0.5}TiO_3$ 박막을 Pt/Ti/$SiO_2$/Si 기판위에 증착하였다. $Ba_{0.5}Sr_{0.5}TiO_3$ 박막 증착시 기판온도는 실온으로 고정시켜주었고, 작업 가스 유량(Ar:$O_2$)과 RF Power는 각각 90:10에서 60:40까지 그리고 50 W와 75 W로 하였다. 또한 박막 증착 후 RTA(Rapid Thermal Annealing)를 이용하여 산소분위기에서 $600^{\circ}C$로 고온 순간 열처리를 하였다. 커패시터 제작을 위해 UHV System의 E-beam evaporator를 이용하여 Pt를 증착하였다. XRD 측정을 통한 구조적 특성에서는 작업 가스 유량과 RF Power에 비해 고온 순간 열처리가 결정화에 기여도가 큼을 확인할 수 있었다. 전기적 특성에서는 RF Power가 50 W이고 열처리를 한 샘플에서 비교적 우수한 특성을 보여주었다.

$(Ba_xSr_{1-x})$TiO$_3$박막의 온도 변화에 따른 유전 특성 (Dielectric Properties with Temperature Variation of $(Ba_xSr_{1-x})$TiO$_3$Thin Films)

  • 김덕규;전장배;송민종;박춘배
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 1997년도 춘계학술대회 논문집
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    • pp.309-313
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    • 1997
  • (Ba$_{x}$Sr$_{l-x}$)TiO$_3$(BST) thin fi1ms with various Ba/Sr ratios were deposited on Pt(80nm)/SiO$_2$(100nm)/Si by RF magnetron sputtering. BST thin films which have x=0.6, 0.5, 0.4 were studied dielectric properties with temperature variation. The frequency was used from 100Hz to 1MHz for measuring dielectric constant. The measurement conditions of dielectric constant with Temperature Variation were 1KHz and 2$0^{\circ}C$. As a result, the dielectric constant of BST thin film was about 425 and loss factor was 0.013. Also, with increasing Temperature, the dielectric constants of BST thin films were gradually decreased.sed.

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불순물 첨가에 따른 $(Ba,Sr,Ca)TiO_{3}$ 세라믹의 유전특성 (Dielectric Properties of $(Ba,Sr,Ca)TiO_{3}$ Ceramics with Additon of Dopant)

  • 이성갑;이영희;임성수;박인길
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 2001년도 추계학술대회 논문집 Vol.14 No.1
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    • pp.42-45
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    • 2001
  • $(Ba_{0.6}Sr_{0.4}Ca_{x})TiO_{3}+yZrO_{2}$ wt% (x=0.10, 0.15, 0.20, y=0.5~3.0) specimens were fabricated by the mixed-oxide method and then the structural and dielectric properties as a function of the composition ratio and $ZrO_2$ contents were studied. All BSCT specimens showed dense and homogeneous structure without the presence of the seconds phase. The Curie temperature and the dielectric constant at room temperature decreased with increasing the Ca/Ba composition ratio and $ZrO_2$ content. The BSCT(50/40/10) specimens showed the excellent tunability property. And the tunability were increased with increasing the contents of $ZrO_2$.

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불순물 첨가에 따른 (Ba,Sr,Ca)$TiO_3$ 세라믹의 유전특성 (Dielectric Properties of (Ba,Sr,Ca)$TiO_3$ Ceramics with Addition of Dopant)

  • 이성갑;이영희;임성수;박인길
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 2001년도 추계학술대회 논문집
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    • pp.42-45
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    • 2001
  • (Ba$_{0.6-x}$Sr$_{0.4}$Ca$_{x}$)TiO$_3$+yZrO$_2$wt% (x=1.10, 0.15, 0.20, y=0.5~3.0) specimens were fabricated by the mixed and ZrO$_2$ contents were studied. All BSCT specimens contents were studied. All BSCT specimens showed dense and homogeneous structure without the presence of the seconds phase. The Curie temperature and the dielectric constant at room temperature decreased with increasing the Ca/Ba composition ratio and ZrO$_2$ content. The BSCT(50/40/10) specimens showed the excellent tunability property. And the tunability were increased with increasing the contents of ZrO$_2$./TEX>.

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