• Electrical & Electronic Materials
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• v.5 no.3
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• pp.284-294
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• 1992

합성용질확산법으로 GaP단결정을 성장시키고 몇가지 성질을 조사하였다. 정지상태에서 결정의 성장속도는 1.75[mm/day]이었고 결정성장용 석영관을 전기로내에서 하강시키므로써 양질의 GaP 단결정을 성장하였다. 에치피트밀도는 결정의 성장축 방향으로 3.8*$10^{4}$[$cm^{-2}$]부터 2.3*$10^{5}$[$cm^{-2}$] 까지 증가하였다. 성장된 GaP결정의 이동도와 캐리어농도는 실온에서 197.49[$cm^{2}$/V.sec]와 6.75*$10^{15}$[$cm^{-3}$]이었고 77K의 온도에서는 266.91[$cm^{2}$ /V.sec]와 3.13*$10^{14}$[$cm^{-3}$]이었다. 에너지갭의 온도의존성은 실험적으로 $E_{g}$(T)=2.3383-(6.082*$10^{-4}$) $T^{2}$/(373.096+T)[eV]로 구하여졌다. 저온에서 측정된 광루미네센스 스펙트럼은 구속된 여기자의 복사재결합과 재결합 과정에 포논의 참여로 인하여 에너지갭 부근의 복잡한 선 스펙트럼이 나타났고 얕은 준위의 Si도너와 Zn억셉터준위 사이에서의 복사재결합 및 이에 대한 1LO, 2LO의 포논복제가 나타났으며 S $i_{Ga}$ -S $i_{p}$의 쌍방출에 의하여 1.8932[eV]에서 넓은 반치전폭의 피크가 나타났다. GaP의 적외선 흡수는 TO, LO, LA, T $A_{1}$, T $A_{2}$ 포논들의 이중결합모드와 G $a_{2}$O의 진동모드 및 Si도너와 Zn억셉터들에 의하여 일어났다. Zn를 확산시키어 제작한 p-n GaP발광다이오드는 실온에서의 발광중심피크가 6250[.angs.]이었고 최대광출력은 0.0916[mW], 양자효율은 0.51%이었다.이었다.

• Electrical & Electronic Materials
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• v.9 no.9
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• pp.885-890
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• 1996

Undoped p-type and Te doped n-type GaSb crystals were grown by the vertical Bridgman method. The lattice constant of the GaSb crystals was 6.096.+-.000373.angs.. The carrier concentration, the resistivity, and the carrier mobility measured by the van der Pauw method were p.iden.8*10$^{16}$ c $m^{-3}$ , .rho..iden.0.20 .ohm.-cm, .mu.$_{p}$ .iden.400c $m^{2}$ $V^{-1}$ se $c^{-1}$ for p-type, n.iden.1*10$^{17}$ c $m^{-3}$ , .rho..iden.0.15 .ohm.-cm, .mu.$_{n}$ .iden.500c $m^{2}$ $V^{-1}$ se $c^{-1}$ for n-type at 300K. In case of treatment with metal ion of R $u^{+3}$, P $t^{+4}$, the carrier concentration, resistivity and carrier mobility of the GaSb crystals were p.iden.2*10$^{17}$ c $m^{-3}$ , .rho..iden.0.08.ohm.-cm, .mu.$_{p}$ .iden.420c $m^{2}$ $V^{-1}$ se $c^{-1}$ for p-type, n.iden.2.5*10$^{17}$ c $m^{-3}$ , .rho..iden.0.07.ohm.-cm, .mu.$_{n}$ .iden.520c $m^{2}$ $V^{-1}$ se $c^{-1}$ for n-type respectively. GaSb crystals had a tendency to lower resistivity and higher mobility, for surface treatment with metal ion effectively diminished surface recombination centers.s.

• Electrical & Electronic Materials
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• v.10 no.8
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• pp.819-829
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• 1997

The microwave dielectric materials of the BaO-Nd$_2$O$_3$-TiO$_2$and BaO-(Sm, Nd)$_2$O$_3$-TiO$_2$system were synthesized by conventional ceramic processing and sintered 1220 to 140$0^{\circ}C$ for 2 hours respectively. Their crystallization and dielectric properties were examined. In the BaO-Nd$_2$O$_3$-TiO$_2$ and BaO-(Sm, Nd)$_2$O$_3$-TiO$_2$system. Nd$_2$Ti$_2$O$_{7}$ and (Sm, Nd)$_2$Ti$_2$O$_{7}$ were observed as a second phase respectively. The maximum relative dielectric constant were 79,99 for the BaO-Nd$_2$O$_3$-TiO$_2$system and 105.07 for the BaO-(Sm,Nd)$_2$O$_3$-TiO$_2$system and their Q-value were over 2000 at 3GHz.GHz.

• Electrical & Electronic Materials
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• v.10 no.8
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• pp.830-835
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• 1997

In this study an experimental investigation has been conducted to remove NOx and SO$_2$simultaneously from a combustion flue gases were consisted of NO-SO$_2$-$CO_2$-$N_2$-O$_2$([NO]o:200ppm and [SO$_2$]o:800ppm) and the injection gases used as radical source gases were NH$_3$-Ar-air and CH$_4$-Ar-air. NOx and SO$_2$removal efficiency and the other by-products were measured by Fourier Transform Infrared(FTIR) as well as SO$_2$, NOx and NO$_2$gas detectors. and SEM images after sampling. The results showed that a significant Nucleating Particle Counter(CNPC) and SEM images after sampling. The results showed that a significant aerosol particle formation was observed during a simultaneous NOx and SO$_2$removal operation in corona radical shower systems. The diameter of aerosol particles was in the range of 0.18 to 3.6${\mu}{\textrm}{m}$ with a maximum fraction of particles at particles diameter of 1${\mu}{\textrm}{m}$. The NOx removal efficiency significantly increased with increasing applied voltage and NH$_3$molecule ratio. The SO$_2$removal efficiency was not significantly effected by applied voltage and slightly increased with increasing NH$_3$molecule ratio. It could be found that it is possible to use CH$_4$for NOx and SO$_2$removal by corona radical shower systems.

• Journal of Integrative Natural Science
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• v.2 no.3
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• pp.177-184
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• 2009

신소재(고분자, 금속, 세라믹)는 기존의 재료와는 다른 우수한 특성과 새로운 기능이 있어 우리 인류 복지에 매우 중요하며 우리는 무한대 생존 경쟁에 몰리고 있다. 이 중 무기고분자는 유기고분자의 단점을 보완하는 동시에 새로운 기능성을 가지므로 산업발전에 매우 중요하다. 다양한 무기고분자의 응용분야 중 세라믹 전구체로의 사용은 첨단 산업 분야에 막대한 발전을 초래하였다. 특히 규소를 함유하는 비산화성 세라믹인 탄화규소 (SiC) 및 질화규소 ($Si_3N_4$) 세라믹은 그 산업적 용도가 다양하다. 규소 고분자는 원료 물질이 값싸고 중합 수율이 높아서 경제적이고, 분자 내 Si와 C 또는 N의 비율을 자유자제로 조정할 수가 있고, 용융성 또는 용해성이 있으므로 성형가공이 가능하며, 세라믹 잔여 수율을 증대시키기 위해서 여러 화학반응에 의해 가교도 시킬 수가 있다. 열분해 조건에 따라서 SiC와 $Si_3N_4$ 등 선택의 조절이 쉬우며, 금속과 섞어서 열분해 함으로서 세멧도 제조할 수가 있다. 이런 종류의 연구는 신소재의 총아인 금속, 고분자, 세라믹 연구들이 함께 어우러진 종합 작품이라 할 수 있겠다. 여러 유형의 유기규소 고분자들을 다양하게 합성해서 그 열분해 과정을 좀 더 면밀히 연구한다면 산업적 응용 가능성은 매우 크리라 기대된다.

• Journal of Welding and Joining
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• v.31 no.2
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• pp.26-29
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• 2013

The latest research & development trend on friction stir welding and friction stir processing technologies presented in the international symposium, 'Friction Stir Welding & Processing VII'. Papers and presentations about high temperature materials such as advanced high strength steel, stainless steel and titanum alloy shoot up this year. Papers on modeling of metal flow and control of process parameters also increased. The FSP technologies for manufacturing of carbon materials reinforced metal matrix composites were reported, too.

• Electrical & Electronic Materials
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• v.9 no.10
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• pp.991-1000
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• 1996

PbTiO$_{3}$-PbZrO$_{3}$-Pb(Ni$_{1}$3/Nb$_{2}$3/O$_{3}$) (PZT-PNN) thin films were prepared from corresponding metal organics partially stabilized with diethanolamine by the sol-gel spin coating method. Each mol ratio of PT:PZ:PNN solutions were #1(50:40:10), #2(50:30:20), #3(45:35:20), #4(40:40:20), #5(40:50:10), #6(35:45:20) and #7(30:50:20) respectively. The spin-coated PZT-PNN films were heat-treated at 350.deg. C for decomposition of residual organics, and were sintered from 450.deg. C to 750.deg. C for crystallization. The substrates, such as Pt and Pt/TiN/Ti/TiN/Si were used for the spin coating of PZT PNN films. The perovskite phase was observed in the PZT-PNN films heat-treated at 500.deg. C. The crystalline of the PZT-PNN films was optimized at the sintering of 700.deg. C. By the result of AES analysis, It is confirmed that the films of TiN/Ti/TiN was a good diffusion barrier and that co-diffusion into the each films was not observed.

• Proceedings of the Korean Institute Of Construction Engineering and Management
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• 2007.11a
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• pp.343-346
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• 2007

Recent advances in automation and robotic technologies in the manufacturing industry suggest that the greater level of automation may be extremely beneficial for the construction industry. However, only some of the high-technology advances may be applied to the construction industry due to the fast-changing construction environment in which work locations are constantly changing and material, equipment, and workers are always moving. The earthwork operation for site development is a good candidate for applying automation technology, because it is a very repetitive and tedious task and needs lots of construction equipment. This paper presents the model of a construction environment and a moving plan for an automated earthwork system, which can produce an effective moving path of an excavator platform with an Octree model. To generate the moving path, the know-how of skilled operators and construction managers is added in the proposed model.

• Electrical & Electronic Materials
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• v.8 no.5
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• pp.619-625
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• 1995

Polycrystalline CdTe thin film has been studied for photovoltaic application due to the 1.45 eV band gap energy ideal for solar energy conversion and high absorption coefficient. The formation of low resistance contact to p-CdTe is difficult because of large work function(>5.5eV). Common methods for ohmic contact to p-CdTe are to form a p+ region under the contact by in-diffusion of contact material to reduce the barrier height and modify a p-CdTe surface layer using chemical treatment. In this study, the surface chemical treatment of p CdTe was carried out by H$\_$3/PO$\_$4/+HNO$\_$3/ or K$\_$2/Cr$\_$2/O$\_$7/+H$\_$2/SO$\_$4/ solution to provide a Te-rich surface. And various thin film contact materials such as Cu, Au, and Cu/Au were deposited by E-beam evaporation to form ohmic contact to p-CdTe. After the metallization, post annealing was performed by oven heat treatment at 150.deg. C or by RTA(Rapid Thermal Annealing) at 250-350.deg. C. Surface chemical treatments of p-CdTe thin film improved metal/p-CdTe interface properties and post heat treatment resulted in low contact resistivity to p-CdTe.Of the various contact metal, Cu/Au and Cu show low contact resistance after oven and RTA post-heat treatments, respectively.

• Electrical & Electronic Materials
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• v.9 no.7
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• pp.690-695
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• 1996

We have systematically investigated the characterization of V$_{2}$O$_{5}$ thin films as a counter electrode for lithium based complementary electrochromic devices. The V$_{2}$O$_{5}$ thin films were prepared by thermal vacuum evaporation with varing the substrate temperature and film thickness. In electrochromic devices for smart windows, the WO$_{3}$ thin films with 400-800 nm thickness require to be capable of reversibly injection 10-15 mC/cm$^{2}$ of lithium, which is readily accomplished charge-balanced switching in a V$_{2}$O$_{5}$ thin films with 100-150nm thick. The V$_{2}$O$_{5}$ thin films produces considerably small changes in optical modulation properties in the visible and near infrared region(500-1100 nm) compared to the amorphous WO$_{3}$ thin films on 10-15 mC/cm$^{2}$ of lithium injection and the V$_{2}$O$_{5}$ thin films can therefore act as a counter electrode to WO$_{3}$ in a lithium based complementary clectrochromic devices. After 10$^{5}$ coloration/bleaching switching time, the degradation does not occurs and the devices exhibit a stable optical modulation in V$_{2}$O$_{5}$ thin films. It has shown that the injected lithium ion amounts in crystalline V$_{2}$O$_{5}$ thin films with the same thickness is large by 3-5 mC/cm$^{2}$ of lithium compared to the amorphous thin films in the same driving conditions. Therefore, to optimize the device performance, it is necessary to choose an appropriate film thickness and crystallinity of V$_{2}$O$_{5}$ for amorphous WO$_{3}$ film thickness as a working electrode.