• Electrical & Electronic Materials
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• v.9 no.3
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• pp.251-258
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• 1996

Sol-Gel derived ferroelectric Pb(Z $r_{0.52}$ $Ti_{0.48}$) $O_{3}$ thin films have been fabricated on Pt/Ti/ $SiO_{2}$/Si substrate. Two kinds of fast annealing methods, F-I (six times of intermediate and final annealing) and F-II(one final annealing after six times of intermediate annealing) were used for preparation of multi-coated PZT thin films. As the annealing temperature was increased, high capacitance could be obtained, for instance, 2700.angs.-thick PZT thin film annealed at 680.deg. C had a capacitance value of approximately 20nF at 1kHz. In addition, it is found that the dielectric constant is a function of the perovskite phase fraction. In case of F-I method, PZT thin film had a remanent polarization(Pr) of 8-15.mu.C/c $m^{2}$ and a coercive field( $E_{c}$) of 35-44kV/cm according to annealing temperature, whereas PZT film fabricated by F-II method had as high as 24-25.mu.C/c $m^{2}$ and 48-59kV/cm, respectively. As a result of measuring Curie temperature, PZT thin film had a range of 460-480.deg. C by F-I method and more or less higher range of 525-530.deg. C by F-II method, which implied that different microstructures could cause the different Curie temperature. Through I-V measurement, leakage current of PZT thin film fabricated by F-I and F-II methods was 64nA/c $m^{2}$ and 2.2.mu.A/c $m^{2}$ in the electric field of 100kV/cm, respectively.y.y.y.

• Electrical & Electronic Materials
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• v.9 no.5
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• pp.455-462
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• 1996

Automobile Fuel Shortage Detecting Sensor, in this paper, was fabricated by using heat dissipation coefficient difference between gasoline and air condition the NTC thermistor of Mn-Ni Co system with the composition ratio of Mn$_{3}$O$_{4}$ : 9wt%, NiO : 28wt%, and CO$_{3}$O$_{4}$ : 61wt%. The condition of sensor operation is that, for turn-on characteristics, the time of arriving at 135mA must be less than 180 second when the DC voltage of 11V is applied in the air condition of -10.deg. C and that, for turn-off characteristics, the saturation current must be less than 60mA when the DC voltage of 15V is applied in the gasoline condition of 60.deg. C. It is known, from the experimental results, that the resistance range and B-constant for the Automobile Fuel Shortage Detecting Sensor with dimension of 5*3*0.9mm were 850-1150.ohm. and 1150-1250.deg. C, respectively and the resistance range and B-constant were agree with that of sensor operation condition. When Bi$_{2}$O$_{3}$ of 0-0.5wt% was added to Mn$_{3}$O$_{4}$ : 9wt%, NiO : 28wt%, and CO$_{3}$O$_{4}$ : 61wt% composition, the resistivity and B-value were 380-430(.ohm.-cm) and 1930 - 2030, respectively. Particularly, for Bi$_{3}$O$_{3}$ of 0.25-0.5wt%, the sintering density of over 90% and the operation characteristics necessary to Automobile Fuel Shortage Detecting Sensor were obtained. The difference of heat dissipation coefficient gasoline and air condition was 15 times.

• Electrical & Electronic Materials
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• v.9 no.5
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• pp.463-469
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• 1996

The double insulating layer consisting of anodic oxide and ZnS was formed for HgCdTe metal insulator semiconductor(MIS) structure. ZnS was evaporated on the anodic oxide grown in H$_{2}$O$_{2}$ electrolyte. Recently, this insulating mechanism for HgCdTe MIS has been deeply studied for improving HgCdTe surface passivation. It was found through TEM observation that an interface layer is formed between ZnS and anodic oxide layers for the first time in the study of this area. EDS analysis of chemical compositions using by electron beam of 20.angs. in diameter and XPS depth composition profile indicated strongly that the new interface is composed of ZnO. Also TEM high resolution image showed that the structure of oxide layer has been changed from the amorphous state to the microsrystalline structure of 100.angs. in diameter after the evaporation of ZnS. The double insulating layer with the resistivity of 10$^{10}$ .ohm.cm was estimated to be proper insulating layer of HgCdTe MIS device. The optical reflectance of about 7% in the region of 5.mu.m showed anti-reflection effect of the insulating layer. The measured C-V curve showed the large shoft of flat band voltage due to the high density of fixed oxide charges about 1.2*10$^{12}$ /cm$^{2}$. The oxygen vacancies and possible cationic state of Zn in the anodic oxide layer are estimated to cause this high density of fixed oxide charges.

• Journal of Adhesion and Interface
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• v.6 no.2
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• pp.6-12
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• 2005

The plasma generally, ionized gas state, is the 4th material state composed the universe. Generating the plasma artificially has been studied by spending energy and it has a lot of applications in human's life. There are several merits to modify the surface of polymer using plasma. Above all, plasma maintains the property of polymer because of it changes the property of surface only. Also, it doesn't use a organic solvent and it is the environment friendship because of there are no waste under processing. Furthemore, in case of high-pressure plasma, it is possible that automated-processing continuously. In this study, we tried the reforming of surface to rise the adhesive strength between the material of polymer, experimented the rising of adhesive strength through a experiment of peel strength by virtue of processing time and using gas, confirmed the change of polymer's surface through measuring the surface contact angle analyzer and scanning electron microscopy (SEM).

• Electrical & Electronic Materials
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• v.7 no.2
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• pp.138-144
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• 1994

Electrical conduction phenomena of $C_{22}$-quinolium(TCNQ) Langmuir- Blodgett(LB) films are reported through a study of current-voltage(I-V) characteristics along a perpendicular direction. The I-V characteristics were investigated by applying a step or a pulse voltage to the specimen as well as changing temperatures in the range of 20-250[.deg. C] It show an ohmic behavior in low-electric field, and a nonohmic behavior in high-electric field. This nonohmic behavior has been interpreted in terms of a conduction mechanism of space-charge limited current and Schottky effect. When the electric field is near the strength of 10$_{6}$ V/cm, there occur anomalous phenomena similar to breakdown. When step or pulse voltage is applied, the breakdown voltage shifts to the higher one as the step or pulse time width becomes shorter. To see the influence of temperature, current was measured as a function of temperature under the several bias voltages, which are lower than that of breakdown. It shows that the current increases to about 103 times near 60-70[.deg. C], and remains constant for a while up to around 150[.deg. C] and then suddenly drops. We have also performed a DSC(differential scanning calorimetry) measurement with $C_{22}$-quinolium(TCNQ) powder in the range of 30-300[.deg. C]. These results imply that the anomalous phenomena occuring in the high electric field are caused by the electrical and internal thermal effect such as a joule heating.ating.

• Electrical & Electronic Materials
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• v.3 no.2
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• pp.90-98
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• 1990

Y-Bi-Ba-Cu-O계 초전도체를 보통의 ceramic방법과 screen printing과 소결법으로 원판형과 후막형으로 제작하였다. B $i_{2}$ $O_{3}$를 첨가하여 소결한 $Y_{1}$B $a_{2}$C $u_{3}$ $O_{7-y}$의 초전도 성질은 전기저항측정과 자석위에 부상 유무로 조사하였다. 또한 B $i_{2}$ $O_{3}$를 첨가함에 따라 소결된 시편의 미세구조에 어떠한 영향을 주었는지 알아보았다. 전기저항 측정시 Yttrium 대신에 Bi로 부분적으로 치환한 경우인 $Y_{0.85}$B $i_{0.15}$B $a_{2}$C $u_{3}$ $O_{7-y}$의 상온 저항치가 기본조성인 $Y_{1}$B $a_{2}$C $u_{3}$ $O_{7-y}$의 그것보다 향상된 미세구조로 인해 더 작은 값을 나타낸다. 반면 $Y_{1}$B $a_{2}$C $u_{3}$ $O_{7-y}$에다가 초과로 B $i_{2}$ $O_{3}$를 첨가한 경우 오히려 미세구조는 불량하고 상온저항치도 더 높다. 이러한 사실은 입계에 잔류하는 이차상은 전기적 성질에는 크게 영향을 주나 자기적 성질에는 거의 영향을 주지않는 것으로 보인다. 후막으로 Y-Bi-Ba-Cu-O를 제작시 기판에 의해 좌우되는데 단지 magnesia 기판에서 소결시 bulk시편과 유사한 성질을 나타냈다.질을 나타냈다.다.

• Electrical & Electronic Materials
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• v.8 no.1
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• pp.56-63
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• 1995

MESFETs of the Ti/Au and Ti/Pd/Au gate were fabricated on n-type GaAs. Interdiffusion at Schottky interfaces, Schottky contact properties, and MESFET characteristics with heat treatment were investigated. Ti of Ti/Au contact and Pd of Ti/Pd/Au contact acted as a barrier metal against interdiffusion of Au at >$220^{\circ}C$. Pd of Ti/Pd/Au contact acted as a barrier metal even at >$360^{\circ}C$, however, Ti of Ti/Au contact promoted interdiffusion of Au instead of role of barrier metal. As the heat treatment temperature increases, in the case of both contact, saturated drain current and pinch off voltage decreased, open channel resistance increased, and degree of parameter variation in Ti/Au gate was higher than in Ti/Pd/Au gate at >$360^{\circ}C$ Schottky barrier height of Ti/Au and Ti/Pd/Au contacts was 0.69eV and 0.68eV in the as-deposited state, respectively, and Fermi level was pinned in the vicinity of 1/2Eg. As the heat treatment temperature increases, barrier height of Ti/Pd/Au contact increased, however, decreased at >$360^{\circ}C$ in the case of Ti/Au contact. Ideality factor of Ti/Au contact was nearly constant regardless of heat treatment, however, increased at >$360^{\circ}C$ in the case of Ti/Au contact. From the results above, Ti/Pd/Au was stable gate metal than Ti/Au.

• Electrical & Electronic Materials
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• v.10 no.3
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• pp.226-232
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• 1997

Ternary semiconductor $Al_{x}$G $a_{1-x}$ Sb crystals which have energy gap of 0.7eV-1.6 eV at room temperature according to the composition ratios were grown by the vertical Bridgman method. The characteristics of the crystals were investigated by XRD, HRTEM and Hall effect. The lattice constants of $Al_{x}$G $a_{1-x}$ Sb crystals were varied from 6.096A over .deg. to 6.135A over .deg. with the composition ratio x. The Hall effect of the $Al_{x}$G $a_{1-x}$ Sb crystals were measured by van der Pauw method with the magnetic field of 3 kilogauss at room temperature. The resistivities of Te-doped $Al_{x}$G $a_{1-x}$ Sb crystals were increased from 0.071 to 5 .OMEGA.-cm at room temperature according to the increment of the composition ratio x. The mobilies of $Al_{x}$G $a_{1-x}$ Sb crystals varied with the composition ratio x resulted in the following three different regions of GaSb-like (0.leq.x.leq.0.3), intermediate (0.3.leq.x.leq.0.4) and AlSb-like (0.4.leq.x.leq.l).q.l).q.l).q.l).

• Electrical & Electronic Materials
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• v.10 no.3
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• pp.239-246
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• 1997

The ZnO is stabilize dielectric constant over a broad temperature range because its addition makes the relaxation time short. In this study, the composite oxide material (B $a_{0.85}$ $Ca_{0.15}$)Ti $O_{3}$ was mixed by ZnO additive material and the dielectric polarization characteristics was studied. The relative density was over 90[%] at all specimen in the structural characteristics. Among of the specimen, the relative density of (B $a_{0.85}$ $Ca_{0.15}$)Ti $O_{3}$ with ZnO (0.4mol) has a 95[%]. The grain size of composite oxide material with an increasing ZnO increased and it was 1.0[.mu.m]-1.22[.mu.m]. In the electrical characteristics, the charge and discharge current was increased by ZnO addition. The dielectric relaxation time was increased by space charge polarization at above 110[.deg. C] and the dielectric relaxation time was fixed by space charge polarization of para-dielectric layer at below 110[.deg. C]. The dielectric relaxation time was maximum when the grain size was small. The dielectric relaxation time is decreased with an additive material ZnO and interface polarization, existing void at the grain and grain boundary. The remnant polarization is increased and the coercive electric field is decreased by ZnO.

• Electrical & Electronic Materials
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• v.10 no.3
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• pp.274-283
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• 1997

These days, according to surprising development of communication enterprises, every soft of devices is getting smaller and cheaper. Among these Devices, microwave dielectric ceramics are studied and progressed briskly as the materials of dielectric resonator. Dielectric properties of BaO-S $M_{2}$ $O_{3}$-Ti $O_{2}$, one of the BaO Lnsub 2/ $O_{3}$-Ti $O_{2}$ (Ln=La, Sm, Nd, Pr…) system, synthesized by solid-reaction and coprecipitation method were investigated. Disk-type samples were sintered at 1250-1400.deg. C for 2hrs. As a result, single phase was not synthesized in both method. First created the second phase of S $M_{2}$ $Ti_{2}$ $O_{7}$, and then the last phase of $Ba_{3.75}$S $m_{9.5}$ $Ti_{18}$ $O_{54}$, Ti $O_{2}$, and $Ba_{2}$ $Ti_{9}$ $O_{20}$. When the sample was sintered at 1280.deg. C (in solid reaction method) and at 1310.deg. C (in coprecipitation method), it obtained highest dielectric constant (72.96 and 71.70, respectively) and high Q value. Above that temperature, dielectric constant and Q value decreased because of lattice defect according to oxygen vacancies........