• Proceedings of the Korean Society for Technology of Plasticity Conference
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• 2008.10a
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• pp.253-253
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• 2008

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.25 no.3
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• pp.218-223
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• 2012

A rigorous electro-optical simulation and ray tracing for an electric field driven liquid crystal Fresnel lens was proposed to obtain design parameters of the electrode pattern of the Fresnel lens. The optimal design was carried out using Taguchi's experimental method for 17.1"($368{\times}229.5$ mm) wide LCD panels with 9 views. For the calculation of the distribution of liquid crystal molecules and the optical transmission of the panel, finite difference method and extended Jones matrix method were used to deal effectively with highly nonlinear and complicated motional equations of the liquid crystal molecules and to obtain the oblique transmission characteristics of the LCD panel. As simulation results, the optimal lengths of the 3 electrodes of the Fresnel lens are 4.0 ${\mu}m$, 30 ${\mu}m$ and 83 ${\mu}m$, respectively, and the locations of the second and third electrodes are 32.9-33.0 ${\mu}m$ and 45.9-46.0 ${\mu}m$, respectively. The optimal applied voltage of the 3 electrodes are found to be 5.75 V, 7.80 V and 11.9 V, respectively.

• Electrical & Electronic Materials
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• v.9 no.9
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• pp.885-890
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• 1996

Undoped p-type and Te doped n-type GaSb crystals were grown by the vertical Bridgman method. The lattice constant of the GaSb crystals was 6.096.+-.000373.angs.. The carrier concentration, the resistivity, and the carrier mobility measured by the van der Pauw method were p.iden.8*10$^{16}$ c $m^{-3}$ , .rho..iden.0.20 .ohm.-cm, .mu.$_{p}$ .iden.400c $m^{2}$ $V^{-1}$ se $c^{-1}$ for p-type, n.iden.1*10$^{17}$ c $m^{-3}$ , .rho..iden.0.15 .ohm.-cm, .mu.$_{n}$ .iden.500c $m^{2}$ $V^{-1}$ se $c^{-1}$ for n-type at 300K. In case of treatment with metal ion of R $u^{+3}$, P $t^{+4}$, the carrier concentration, resistivity and carrier mobility of the GaSb crystals were p.iden.2*10$^{17}$ c $m^{-3}$ , .rho..iden.0.08.ohm.-cm, .mu.$_{p}$ .iden.420c $m^{2}$ $V^{-1}$ se $c^{-1}$ for p-type, n.iden.2.5*10$^{17}$ c $m^{-3}$ , .rho..iden.0.07.ohm.-cm, .mu.$_{n}$ .iden.520c $m^{2}$ $V^{-1}$ se $c^{-1}$ for n-type respectively. GaSb crystals had a tendency to lower resistivity and higher mobility, for surface treatment with metal ion effectively diminished surface recombination centers.s.

• Proceedings of the KIEE Conference
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• 1996.07c
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• pp.1787-1790
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• 1996

• Journal of the Korean Professional Engineers Association
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• v.16 no.3
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• pp.5-23
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• 1983

On the Seoul Metropolitan Subway Construction of No. 3, 4 Line, the total length is 57 Km and it is now undergoing almost 55％ progress. The working method is classified into Open Cut of 70% and the rest of 30% tunnelling method in the 48 job site. Above tunnelling method is execute by American Steel Support System and the rest of 10 job site carried out by New Austria Tunnelling Method. This paper describes Blasting Standardizations works on the above Tunnelling ' Open Cut Method under big slogan, first safety, second execution. As a superintendent, I strived standardization of works with Better powder, Better Drills ' Better Pattern. Geological structure of Seoul area is composed by Jurassic Granite and also the above rockgroup are over burden by Alluviums as a Unconformity. First of all, I carried out the standard amount of powder and burden through experimental standard blasting by each powder as following Blasting works in the subway construction is surrounding shop Building, under pass the city river and also under pass highest building basement floor. I made allowable Blasting Vibration Value by West-Germany Vornorm DIN 4150, Teil 3 and should measure each blasting works as fellows all of powder is used basically Low-Gravity and Low Velocity such as Slurry, Ammonium Nitrate ' Finex I, II. for Smooth Blasting Instead of Gelatin Dynamite. Electric Detonation Cap is used basically M/S Delay Cup instead of Electric delay ' Simultaneous cap. I applied following formula V=KW3/4 $D^{-2}$ V=Particle Velocity (Cm/sec) K=Ginh Huh's Value W=Delay Charge (Kg) D=Distance(m) In the Open Cut, within 1m distance from H-pile I made to use the Concrete breaker, as following V=7W/$^{0.5}$V/$^{-1.75}$ On the Concentrate Building area, I advise to use Light class drill ø36m Bit and advance 1.1m per round blasting the three boom jumbo drill over ø45mm used only suburb of city.e Light class drill ø36m Bit and advance 1.1m per round blasting the three boom jumbo drill over ø45mm used only suburb of city.

• The Korean Journal of Nuclear Medicine
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• v.29 no.4
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• pp.526-532
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• 1995

Introduction : $^{99m}Tc$-(V)-DMSA is a tumor seeking agent that has been used to image medullary carcinoma of thyroid, soft tissue sarcoma and lung cancer. This study was designed to assess the clinical role of $^{99m}Tc$-(V)-DMSA in the diagnosis of head and neck cancers. We has evaluated the diagnostic efficacy of planar and SPECT imaging using $^{99m}Tc$-(V)-DMSA. Patients and Method : Sixty-eight patients with head and neck mass were included in this study. All subjects were diagnosed by biopsy or surgery. Planar and SPECT images were obtained at 2 or 3 hour after intravenous injection of 740 MBq(20 mCi) $^{99m}Tc$-(V)-DMSA. Seventeen patients also underwent SPECT in aging using dual head camera. Result : The diagnostic sensitivity of $^{99m}Tc$-(V)-DMSA planar and SPECT imaging was 65% and 90%, and specificity was 80% and 66%, respectively. The sensitivity of planar imaging in squamous cell carcinoma was similar to overall sensitivity Six metastatic lesion were first diagnosed by scintigraphy. But benign lesions such as Kikuchi syndrome, tuberculous lymphadenitis also revealed increased uptake. Conclusion : $^{99m}Tc$-(V)-DMSA imaging seems to be a promising method in the evaluation of patients with head and neck mass. We recommend SPECT imaging to delineate anatomic localization of the lesion.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.48 no.6
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• pp.25-32
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• 2011

This paper proposes high efficiency current-mode DC-DC buck converter that are suitable for portable devices. The current-mode DC-DC buck converter using adjustable Dead-time control method improves the power efficiency 2~5%. The buck converter has been implemented with a standard 0.35${\mu}m$ CMOS process. The size of this chip is 0.97$mm^2$. The input range of the fabricated DC-DC buck converter is 2.5V~3.3V, and the output is 1.8V. The maximum loading current of the converter is 500mA and the peak efficiency is 93% at 200mA loads.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.8 no.5
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• pp.1068-1073
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• 2004

5 V/500 mA transless type power module was designed by using a semiconductor switching technique for a small-sized electric power source. It used voltage drop type chopper method, and is composed of switching circuit, control circuit, voltage detect circuit, and constant voltage circuit. The switching power module which is designed in this study, showed load regulation of 0.2 V, line regulation of 0.1 V, output ripple of 85 mVp-p, switching frequency of 64.7 kHz, maximum power efficiency of 58 %, and satisfied its reliability and EMC test.

• Proceedings of the Korean Society for Technology of Plasticity Conference
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• 2008.10a
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• pp.249-252
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• 2008

Micro V-notching process has been used to manufacturing the safety component in Li-Ion battery. These kinds of safety component in Li-Ion battery plays an important role in the explosion from excessive overheating. Therefore, it is very crucial to estimate accurately the working pressure range of the safety component with micro V-notch. In this study, the relationship with the working internal pressure in Li-Ion battery and fracture phenomenon in micro V-notch was investigated through the numerical analysis. The numerical analysis is especially adopted the finite element method with ductile fracture criteria.

• Proceedings of the IEEK Conference
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• 1998.06a
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• pp.530-533
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• 1998

In this paper, a new scheme of a boosted voltage generator (BVG) is designed for low powr DRAM's. The designed BVG can supply stable $V_{pp}$ using a new circuit operting method. This method controls charge pumping capability by switching the supply voltage and ring oscillator frequency of driving circuit, so the BVG can save area and reduce the powr dissipation during $V_{pp}$ maintaining period. The charge pumping circuit of the BVG suffers no $V_{T}$ loss and is to be applicable to low-voltage DRAM's. $V_{pp}$ level detecting circuit can detect constant value of $V_{pp}$ against temperature variation. The level of $V_{pp}$ varies -0.55%~0.098% during its maintaining period. Charge pumping circuit can make $V_{pp}$ level up to 2.95V with $V_{cc}$ =1.5V. The degecting level of $V_{pp}$ level detecting circuit changes -0.34% ~ 0.01% as temperature varies from -20 to 80.deg. C. The powr dissipation during V.$_{pp}$ maintaining period is 4.1mW.W.1mW.