• Journal of Korean Vacuum Science & Technology
• /
• 제4권1호
• /
• pp.11-17
• /
• 2000

The low temperature electron mobilities were investigated in Si/$Si_{1-x}Ge_{x}$ modulation Doped (MOD) quantum well structure with thermally grown oxide. N-type Si/$Si_{1-x}Ge_{x}$ structures were fabricated by a gas source MBE. Thermal oxidation was carried out in a dry $O_2$ atmosphere at $700^{\circ}C$ for 7 hours. Electron mobilities were measured by a Hall effect and a magnetoresistant effect at low temperatures down to 0.4 K. Pronounced Shubnikov-de Haas (SdH) oscillations were observed at a low temperature showing two dimensional electron gases (2 DEG) in a tensile strained Si quantum well. The electron sheet density ($n_{s}$) of 1.5${\times}$$10^{12}$[$cm^{-2}$] and corresponding electron mobility of 14200 [$cm^2$$V^{-1}$$s^{-1}$] were obtained at low temperature of 0.4 K from Si/$Si_{1-x}Ge_{x}$ MOD quantum well structure with thermally grown oxide.

• 한국수소및신에너지학회논문집
• /
• 제19권5호
• /
• pp.386-393
• /
• 2008

The Sulfur-iodine(SI) thermochemical cycle is one of the most promising methods for massive hydrogen production. For the purpose of continuous operation of SI cycle, phase separation characteristics into two liquid phases ($H_2SO_4$-rich phase and $HI_x$-rich phase) were directly investigated via Bunsen reaction. The experiments for Bunsen reaction were carried out in the temperature range, from 298 to 333 K, and in the $I_2/H_2O$ molar ratio of $0.109{\sim}0.297$ under a continuous flow of $SO_2$ gas. As the results, solubility of $SO_2$, decreased with increasing the temperature, had considerable influence on the global composition in the Bunsen reaction system. The amounts of impurity in each phase(HI and $I_2$ in $H_2SO_4$-rich phase and $H_2SO_4$ in $HI_x$-rich phase) were decreased with increasing $H_2SO_4$ molar ratio and temperature. To control the amounts of impurity in $HI_x$-rich phase, temperature is a factor more important than $I_2/H2_O$ molar ratio. On the other hand, the affinity between $HI_x$ and $H_2O$ was increased with increasing $I_2/H2_O$molar ratio.

• 대한전기학회:학술대회논문집
• /
• 대한전기학회 1998년도 하계학술대회 논문집 D
• /
• pp.1456-1458
• /
• 1998

The $(Sr_{1-x}Ca_x)TiO_3(SCT)$ thin films were deposited at various substrate temperature using rf magnetron sputtering method on optimized Pt-coated electrodes ($Pt/TiN/SiO_2/Si$). The dielectric constant changes almost linearly in the temperature region of $-80{\sim}+90[^{\circ}C]$, the temperature characteristics of the dielectric loss exhibited a stable value within 0.1. The capacitance characteristics appears a stable value within ${\pm}5$[%]. The drastic decrease of dielectric constant and increase of dielectric loss in SCT thin films is observed above 200[kHz]. Dielectric constant of SCT thin films deposited on Si wafer substrate are larger with the increase of deposition temperature.

• 대한화학회지
• /
• 제50권3호
• /
• pp.232-236
• /
• 2006

형광체의 특성을 향상시키기 위하여 Y1.99-xMxCe0.01SiO5(M=Li, La, Nd, and Gd)를 환원분위기에서 1350oC, 10시간동안 고상반응법으로 합성하였다. 상용품인 청색 형광체와 비교를 했을 때, 다양한 원소를 치환한 Y2SiO5:Ce 청색 형광체의 발광 특성이 우수 하다는 것을 관찰 할 수 있었다. 특히, 1mol%의 Li 이온이 도핑된 Y2SiO5:Ce 청색 형광체의 광 발광 특성이 가장 높았다. Y2SiO5:(Ce,Li) 청색 형광체의 입도형상을 주사전자현미경으로 분석한 결과, 입자의 크기가 약 3m인 유사구형임을 확인하였다.

• 한국신재생에너지학회:학술대회논문집
• /
• 한국신재생에너지학회 2010년도 춘계학술대회 초록집
• /
• pp.63.2-63.2
• /
• 2010

삼중접합 태양전지에 상부전지로 이용되는 a-SiO:H 태양전지는 PECVD(Plasma Enhanced Chemical Vapour Deposition)을 이용하여 증착하였다. i a-SiO:H는 $CO_2/SiH_4$ 비율을 변화하여 밴드갭을 조절하였다. $CO_2/SiH_4$가 0에서 0.43으로 증가 할수록 밴드갭이 1.74 eV에서 1.94 eV로 증가하는 경향을 보였다. 이는 FTIR에서 나타난 결과인 Si-O-Si 결합의 증가 때문인 것으로 판단한다. 그에 반해서 광 전도도는 감소하는 경향을 보였다.그러나 암전도도와 광전도도의 비율인 광민감도는 $10^5$에서 $10^4$의 값으로 비정질 태양전지에 적용가능한 값을 보였다. 이러한 박막 특성을 가진 i a-SiO:H를 이용하여 비정질 실리콘 태양전지를 제작한 결과 $CO_2/SiH_4$의 비율이 증가함에 따라 태양전지의 $V_{oc}$가 0.8 V에서 0.5 V로 현저하게 감소하였고, $J_{sc}$와 FF 역시 11 $mA/cm^2$에서 4 $mA/cm^2$, 69%에서 50%로 감소하였다. 단위박막 결함을 측정하는 CPM(Constant Photocurrent Method)을 이용하여 i a-SiO:H 내부에 $10^{16}cm^{-3}$ 정도의 내부 결함을 관찰하였고 이는 태양전지의 특성 감소와 관련이 있는 것으로 판단한다.

• Corrosion Science and Technology
• /
• 제9권2호
• /
• pp.81-86
• /
• 2010

The mechanisms of selective oxidation of intercritically annealed CMnAl TRIP steels in a Continuous Galvanizing Line (GCL) were studied by cross-sectional observation of the surface and sub-surface regions by means of High Resolution Transmission Electron Microscopy (HR-TEM). The selective oxidation and nitriding of an intercritically annealed CMnAl TRIP steel in a controlled dew point 10%$H_2+N_2$ atmosphere resulted in the formation of c-xMnO.$MnO_2$ (1${\leq}$x<3) and c-xMnO.$Al_2O_3$ ($x{\geq}1$) particles on the steel surface. Single crystal c-xMnO.$SiO_2$ ($2{\leq}x{\leq}4$) oxide particles were also observed on the surface. A thin film of crystalline c-xMnO.$SiO_2$ (2${\leq}$x<3) and c-xMnO.$Al_2O_3$ ($x{\geq}1$) was present between these particles. In the sub-surface region, internal oxidation, nitriding and intermetallic compound formation were observed. In the first region, large crystalline c-xMnO.$SiO_2$ ($1{\geq}x{\geq}2$) and c-xMnO.$Al_2O_3$ ($x{\geq}1$) oxides particles were present. In the second region, c-AlN particles were observed, and in a third region, small $MnAl_x$ (x>1) intermetallic compound particles were observed.

• 한국세라믹학회지
• /
• 제39권6호
• /
• pp.594-597
• /
• 2002

플라즈마 화학기상증착(PECVD)법을 이용하여 p-type Si(100) 웨이퍼에 Silicon Oxynitride(SiON) 후막을 SiH$_4$ , $N_2$O, $N_2$ 가스를 혼합하여 증착하였다. Prism coupler측정을 통해 SiON 후막의 굴절률 1.4620~1.5312을 얻었으며, rf power가 180 W에서 5.92$\mu$m/h의 증착률을 나타내었다. 증착변수에 따른 화학적 조성의 영향은 X-ray Photoelectron Spectroscopy(XPS) 을 통하여 관찰하였다. 또한, SiON 후막 증착후에 $1.5\mu$m 부근의 흡수띠를 제거하기 위해 105$0^{\circ}C$의 $N_2$ 분위기에서 2시간 동안 열처리를 행하였다.

• Korean Chemical Engineering Research
• /
• 제59권2호
• /
• pp.281-295
• /
• 2021

Si/(Si + Al) 몰비를 30 몰%까지 변화시켜 제조한 SiO2-Al2O3 복합 산화물(SA) 상에 니켈을 함침법으로 제조한 촉매 상에서 에탄올의 아민화반응에 미치는 영향을 연구하였다. 제조된 촉매의 물리·화학적 특성을 알아보기 위하여 X-선 회절분석(XRD), N2 흡착분석, 이소프로판올 승온탈착(IPA-TPD), 에탄올 승온탈착(EtOH-TPD), 수소 승온환원(H2-TPR), H2 화학흡착, 투과전자현미경(TEM) 분석을 수행하였다. SA 복합 산화물 상에서 Si/(Si + Al) = 30 몰%가 될 때까지 지속적으로 산점이 증가하였다. 담지된 Ni 금속의 분산도, 비표면적 및 산 특성 등이 촉매 반응활성에 복합적으로 영향을 미쳤다. 산점 증가와 니켈 산화물의 낮은 환원 온도는 아세토니트릴 생성에 유리하게 작용하는 것으로 사료된다. 에탄올의 전환율 측면에서는 10 wt% Ni이 담지된 Si/(Si + Al) = 10 몰% 촉매가 가장 높은 전환율을 보였으며 이를 기준으로 화산형 형태를 나타냈고, Ni 금속 분산도와 경향이 일치했다.

• 한국전기전자재료학회논문지
• /
• 제26권1호
• /
• pp.22-26
• /
• 2013

PTCR ceramics of $(Ba_{0.998}Sm_{0.002})TiO_3+0.001MnCO_3+xSiO_2$ (x=1, 2, 3, 4, 5, 6 mol%) were fabricated by solid state method. Disk samples of diameter 5 mm and thickness about 1mm were sintered at $1,290^{\circ}C$ for 2 h in reduced atmosphere of $5%H_2-95%N_2$ followed by re-oxidation at $600^{\circ}C$ for 30 min. in $20%O_2-80%N_2$.and their microstructures and electrical properties were investigated with SEM and Multimeter. The color of sintered samples was strongly dependent on $SiO_2$ content showing that the color of samples with $SiO_2$ of 1~2 mol% was gray but that of samples with $SiO_2$ of 4~6 mol% was changed from gray to blue, which seems to be related with the reduction of samples due to the oxygen vacancies created during the sintering in reduced atmosphere. $SiO_2$ content had a great influence on the microstructure and the electrical properties. With increasing $SiO_2$ content, the grain size of samples increased and the resistivity as well as the resistivity jump ($R_{285}/R_{min}$) decreased, which is considered to be attributed to the resistivity change at grain interior and grain boundary due to the fast mass transfer through $SiO_2$ liquide phase during the sintering. Samples with 2 mol% $SiO_2$ has the resistivity of $202{\Omega}cm$ and the resistivity jump of 3.28. It is expected that $SiO_2$ doped $BaTiO_3$ based PTC ceramics can be used for multilayered PTC thermistor due to the resistance to the sintering in reduced atmosphere.

• Bulletin of the Korean Chemical Society
• /
• 제16권10호
• /
• pp.923-929
• /
• 1995

Four crystal structures of M3-A (M3Na9-xHx-A, M=Rb or K and x=1 or 0), Rb3Na8H-A(a=12.228(1) Å and R1=0.046), Rb3Na9-A (a=12.258(3) Å and R1=0.058), K3Na8H-A (a=12.257(3) Å and R1=0.048) and K3Na9-A (a=12.257(3) Å and R1=0.052), have been determined by single crystal x-ray diffraction technique in the cubic space group Pm3^m at 21 ℃. In all structures, each unit cell contained three M+ ions all located at one crystallographically distinct position on 8-rings. Rb+ ions are 3.12 and 3.21 Å away respectively from O(1) and O(2) oxygens, about 0.40 Å away from the centers of the 8-rings, and K+ ions are 2.87 and 2.81 Å apart from the corresponding oxygens. These distances are the shortest ones among those previously found for the corresoponding ones. Eight 6-rings per unit cell are occupied by eight Na+ ions, each with a distance of 2.31 Å to three O(3) oxygens. The twelfth cation per unit cell is found as Na+ opposite 4-ring in the large cavities of M3Na9-A and assumed to be H+ for M3Na8H-A. With these noble non-framework cationic arrangements, larger M+ ions preferably on all larger 8-rings and the compact Na+ ions on all 6-rings, the bond angles in the 8-rings of M3-A, 145.1 and 161.0 respectively for (Si,Al)-O(1)-(Si,Al) and (Si,Al)-O(2)-(Si,Al), turned out to be remarkably stable and smaller, by more than 12 to 17°, than the corresponding angles found in the crystal structures of zeolites A with high concentration of M+ ions. It is to achieve these remarkably relaxed 8-rings, the main windows for the passage of gas molecules, with simultaneously maximized cavity volumes that M3-A have been selected as one of the efficient zeolite A systems for gas encapsulation.