• Journal of the Korean Ceramic Society
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• v.37 no.1
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• pp.50-56
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• 2000

Precursor gels with the composition of xZrO2·(100-x)SiO2 systems (x=10, 20 and 30 mol%) were prepared by the sol-gel method. Kinetic parameters, such as activation energy, Avrami's exponent, n, and dimensionality crystal growth value, m, have been simultaneously calculated from the DTA data using Kissinger and Matusita equations. The crystallite size dependence of tetragonal to monoclinic transformation of ZrO2 was investigated using XRD, in relation to the fracture toughness. The crystallization of tetragonal ZrO2 occurred through 3-dimensional diffusiion controlled growth(n=m=2) and the activation energy for crystallization was calculated using Kissinger and Matusita equations, as about 310∼325±10kJ/mol. The growth of t-ZrO2, in proportion to the cube of radius, increased with increasing heating temperature and hteat-treatment time. It was suggested that the diffusion of Zr4+ ions by Ostwald ripening was rate-limiting process for thegrowth of t-ZrO2 crystallite size. The fracture toughness of xZrO2·(100-x)SiO2 systems glass ceramics increased with increasing crystallite size of t-ZrO2. The fracture toughness of 30ZrO2·70SiO2 system glass ceramics heated at 1,100℃ for 5h was 4.84 MPam1/2 at a critical crystaliite size of 40 nm.

• Journal of Sensor Science and Technology
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• v.22 no.3
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• pp.233-237
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• 2013

We fabricated electrolyte-insulator-semiconductor (EIS) devices using a solution process and measured the sensing properties of EIS devices according to the thicknesses of sensing membrane. For high pH sensitivity and better stability properties, we used $SiO_2/HfO_x$ (OH) layer as a sensing membrane. In this work, $HfO_x$ sensing membranes were deposited on 5 nm thick $SiO_2$ buffer layer by spin coater with thicknesses of 15, 31, 42, 55 nm, respectively. As a result, we founded that the thickness of $HfO_x$ sensing membrane affects to sensitivity and chemical stability of EIS device. Especially, the EIS device with 42 nm thick $HfO_x$ membrane showed superior sensing ability in terms of pH-sensitivity, linearity, hysteresis voltage and drift rate characteristics than the other devices. In conclusion, we confirmed that it is possible to improve the sensing ability and the chemical stability properties using optimized thickness of sensing membrane and proper annealing process.

• Journal of the Korean Ceramic Society
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• v.24 no.1
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• pp.23-32
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• 1987

Synthesis of high purity ultrafine Si3N4 and ${\beta}$-Sialon powders was investigated via the simultaneous reduction and nitriding of amorphous SiO2, SiO2-Al2O3 system prepaerd by hydrolysis of alkoxides, using carbonablack as a reducing agent. In Si(OC2H5)4-C2H5 OH-H2 O-NH4OH system, hydrolysis rate increased with increasing reaction temperature and pH. Pure ${\alpha}$-Si3N4 was formed at 1350$^{\circ}C$ for 5 hrs in N2 atmosphere. In Si(OC2H5)4-Al(OC3H7)3-C6H6-H2 O-NH4OH system, weight loss increased as Si/Al ratio decreased. Single phase ${\beta}$-Sialon consisted of Si/Al=2 was formed at 1350$^{\circ}C$ in N2 and minor phases of ${\alpha}$-Si3N4, AIN, and X-phase were existed besides theSialon phase at other Si/Al ratios. The Si3N4 and Sialon powders synthesized from alkoxides consisted of uniform find particles of 0.05-0.2$\mu\textrm{m}$ in diameter, respectively.

• Korean Chemical Engineering Research
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• v.47 no.4
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• pp.424-429
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• 2009

The effects of $Na_2O$, $SiO_2$ and $H_2O$ contents of the synthetic mixtures prepared from water glass on the crystallinity and crystallite size of sodalite were studied. The composition of the synthetic mixtures described by $x\;Na_2O{\cdot}y\;SiO_2{\cdot}Al_2O_3{\cdot}z\;H_2O$ was varied within x=2.5~7.5, y=1.4~3.0, z=140~400. The hydrothermal reaction was carried out at $140^{\circ}C$ for 2 days. High content of $Na_2O$ resulted in the high crystallinity and small crystallite of sodalite. The $SiO_2/Al_2O_3$ molar ratios of around 2 were suitable for the synthesis of sodalite, and produced zeolite species were varied by the $H_2O$ content. Sodalite was mainly obtained with a high crystallinity from the synthetic mixtures with $SiO_2/Al_2O_3$ molar ratio of around 2 and high content of $Na_2O$. The high content of sodium ions caused a decrease in the particle sizes because of their role of structure directing agent.

• Electrical & Electronic Materials
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• v.7 no.4
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• pp.294-299
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• 1994

CHF$_{3}$/CH$_{4}$Ar 플라즈마에 의해 형성된 산화막 식각 잔류물의 화학구조와 이 잔류물의 제거를 위한 세정방법을 x-ray photoelectron spectroscopy를 이용하여 조사하였다. 잔류무르이 구조는 CF$_{x}$-polymer와 Si-C, Si-O 결합으로 이루어진 SiO$_{y}$ C$_{z}$ 이었다. CF$_{4}$O$_{2}$ 플라즈마에 의한 silicon light etch는 산화막 식각 잔류물인 SiO$_{y}$ C$_{z}$ 층과 손상된 실리콘 표면을 제거하엿으며 NH$_{4}$OH-H$_{2}$O$_{2}$과 HF용액으로 완전히 제거되는 CF$_{x}$-polymer/SiO$_{x}$층을 남겼다. 100.angs.정도의 silicon light etch는 minority carrier life time과 thermal wave signal값을 초기 웨이퍼 수준까지 회복시켰으며 접합누설 전류도 거의 습식 식각 공정수준까지 감소시켰다.

• Journal of the Korean Chemical Society
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• v.55 no.4
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• pp.570-574
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• 2011

Large colorless single crystals of analcime with diameters up to 0.20 mm have been synthesized from gels with the composition of $3.00SiO_2$ : $1.50NaAlO_2$ : 8.02NaOH : $454H_2O$ : 5.00TEA. The fully $Na^+$-exchanged analcime have been prepared with aqueous 0.1 M NaCl (pH adjusted from 6 to 11 by dropwise addition of NaOH). The single-crystal structure of hydrated $|Na_{0.94}(H_2O)|[Si_{2.06}Al_{0.94}O_6]$-ANA per unit cell, a=13.703(3) ${\AA}$, has been determined by single-crystal X-ray diffraction technique in the orthorhombic space group Ibca at 294 K. The structure was refined using all intenties to the final error indices (using only the 1,446 reflections for which $F_o$ > $4{\sigma}(F_o))R_1/wR_2$ = 0.054/0.143. About 15 $Na^+$ ions are located at three nonequivalent positions and octahedrally coordinated. The chemical composition is $Na_{0.94}(H_2O)Si_{2.06}Al_{0.94}O_6$. The Si/Al ratio of synthetic analcime is 2.19 determined by the occupations of cations, 14.79, in the single-crystal determination work.

• Membrane Journal
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• v.14 no.4
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• pp.312-319
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• 2004

The porous SiO$_2$-B$_2$O$_3$ membrane was prepared from Si(OC$_2$$H_5$)$_4$-($CH_3$O)$_3$B-C$_2$$H_5$OH-$H_2O$ system by sol-gel method. In order to investigate the characteristics of this membrane, we examined that using BET, IR spectrophotometer, X-ray diffractometer, SEM and TEM. At $700^{\circ}C$, the surface area of SiO$_2$-B$_2$O$_3$ membrane was 354.398 $m^2$/, the median pore diameter was 0.0048 ${\mu}{\textrm}{m}$, and the particle size of SiO$_2$-B$_2$O$_3$ membrane was 7 nm. The separation properties of the gas mixture ($H_2$/$N_2$) through the SiO$_2$-B$_2$O$_3$ membrane was studied as a function of pressure. The real separation factor($\alpha$) of SiO$_2$-B$_2$O$_3$ membrane for $H_2$/$N_2$ gas mixture was 4.68 at 155.15 cmHg and $25^{\circ}C$. The real separation factor($\alpha$), head separation factor($\beta$) and tail separation factor((equation omitted)) were increased as the pressure of permeation cell increased.

• Korean Journal of Materials Research
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• v.17 no.8
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• pp.414-419
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• 2007

We report the electrical conductivity of the mixed alkali silicate glasses in the system (60-x)$SiO_2-40Na_2O-xCaO(x=0\sim15wt%)$ in the temperature range from $150^{\circ}C$ to $620^{\circ}C$. In the range from $150^{\circ}C$ to glass transition temperature$(T_g)$, the electrical conductivities of glass samples had a tendency to be proportion with temperature. The glasses of containing over 7.5wt% CaO showed lower conductivities than the glasses of containing 0 and 5wt% CaO because two kinds of alkali ions$(Na^+,\;Ca^{2+})$ were obstructed each other. On the other hand, in the range from $T_g$ to $620^{\circ}C$, the electrical conductivity of glasses($7.5{\leq}x{\leq}12.5$) was unstable and decreased in some region. From XRD results, the $Na_4Ca(SiO_3)_3$ phase were observed in these glasses. This means the alkali ions didn't behave as carrier, it seems that this caused the conductivities decrease. In case of glass of containing 15wt% CaO, any crystal phase were not observed. This means the alkali ions behaved as carrier, it consequently seems the conductivity increased.

• Journal of information and communication convergence engineering
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• v.5 no.3
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• pp.215-218
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• 2007

In this paper, amorphous semiconductor and insulator thin film are etched using reactive ion etcher. At that time, we experiment in various RIE conditions (chamber pressure, gas flow rate, rf power, temperature) that have effects on quality of thin film. The using gases are $CF_4,\;CF_4+O_2,\;CCl_2F_2,\;CHF_3$ gases. The etching of a-Si:H thin film use $CF_4,\;CF_4+O_2$ gases and the etching of $a-SiO_2,\;a-SiN_x$ thin film use $CCl_2F_2,\;CHF_3$ gases. The $CCl_2F_2$ gas is particularly excellent because the selectivity of between a-Si:H thin film and $a-SiN_x$ thin film is 6:1. We made precise condition on dry etching with uniformity of 5%. If this dry etching condition is used, that process can acquire high yield and can cut down process cost.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.9 no.1
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• pp.6-13
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• 1999

NaX zeolite crystal were grown from seed elements of synthetic NaX(2~3$\mu\textrm{m}$) Powder in a mother liquor having an approximate reactant composition ${4.12{Na}_{2}O{\cdot}{Al}_{2}{O}_{3}{\cdot}3.5{SiO}_{2}{\cdot}593{H}_{2}O$.The result was that crystallization time of NaX zeolite was reduced with adding seed materials to the initial mixture and crystal size was reduced . but with increasing crystallization time, NaX zeolite. In this study, We investigated detailed factors which NaX crystal has been determined by a combination of SEM, XRD, FT-IR, and BET.