• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1998.11a
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• pp.339-342
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• 1998

Ferroelectric L $a_2$ $Ti_2$ $O_{7}$(LTO) thin films were prepared by chemical solution deposition processes. Acetylacetone was used as chelating agent and nitric acid was added in the stock solution to control hydrolysis and condensation reaction rate. The LTO thin films were spin-coated on Pt/Ti/ $SiO_2$/(100)Si and Pt/Zr $O_2$/ $SiO_2$/(100)Si substrates. After multiple coating, dried thin films were heat-treated for decomposition of residual organics and crystallization. The role of acetylacetone in Ti iso-propoxide stabilization by possibly substituting $O^{i}$Pr ligand was studied by H-NMR. B site-rich impurity phase, i.e. L $a_4$ $Ti_{9}$ $O_{24}$, was found after annealing, where its appearance was dependent on process temperature indicating the possible reaction with substrate. Dielectric and other relevant electrical properties were measured and the results were compared between modified sol-gel and MOD processes.s.s.

• Korean Journal of Materials Research
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• v.6 no.5
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• pp.504-514
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• 1996

고상반응법과 sol-gel법으로 제조된 NASICON의 상온과 25$0^{\circ}C$에서의 X선 회절 데이터를 리트벨트 분석을 행하였다. monoclinic에서 rhombohedral로 상전이가 일어나도 원자들의 변위는 매우 작았다. 이들 상간의 ZrO6 팔면체와 Si(P)O4 사면체고 구성된 골격은 다소 다르게 나타남으로 인하여 Na 이온의 자리도 변하였다. 이들 방법으로 제조된 NASICON은 Zr이 부족한 비화학양론 화학식, Na 1+x+4yZr2-xSixP3-xO12으로 표현될 수 있었다. 제조법에 따라 Na 이온들의 자리 점유율이 변화하였다. 상온에서는 Na(1)과 Na(3)자리의 자리 점유율의 합이 거의 1에 가까웠으나, 25$0^{\circ}C$에서는 Na(1)과 mid Na 자리를 단위 화학식 당 한 개를 약간 상회하는 Na 이온이 점유하였다. 상온과 25$0^{\circ}C$에서의 Na 이온의 이동 경로가 다름을 알 수 있었다. 또한 25$0^{\circ}C$에서는 Na(1)자리와 Na(2)자리 사이에 mid Na가 존재하며, 이 자리가 Na 이온의 이동에 중요한 역할을 함을 알 수 있었다.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.24 no.6
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• pp.458-462
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• 2011

Soution-processed ZrInZnO (ZIZO) thin-film transistors (TFTs) with varying Zr content were fabricated. The ZIZO TFT (Zr=20 at. %/Zn) has an optimal performance with the saturation field effect mobility of 0.77 $cm^2/Vs$, the threshold voltage (Vth) of 2.1 V, the on/off ratio of $4.95{\times}10^6$, and subthreshold swing (S.S) of 0.73 V/decade. Using this optimized ZIZO TFT, the positive and negative gate bias stress according to annealing temperature was also investigated. While the Vth shifts dramatically after 1,000 s of both gate bias stresses, variations in the S.S are negligible. It suggests that electrons or holes are tem porarily trapped in the gate insulator, the semiconductor, or the interface between both layers.

• The Journal of Engineering Geology
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• v.32 no.2
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• pp.295-310
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• 2022

The Weolaksan and Sokrisan granites yield high SiO₂ and alkali (Na₂O+K₂O) contents and low CaO and P₂O₅ contents. The Al saturation index is ≥1.3, which indicates that the granites are peraluminous. The mean U and Th contents are 8.3 and 39.3 ppm, respectively, higher than typical Mesozoic granites in South Korea and about twice the global mean for granitic rocks. The causes of such high radioelement contents are related to high degrees of fractionation and the crustal origin of the granites. U- and Thbearing radioactive minerals occur in the granites include zircon, thorite, monazite, xenotime, fergusonite and uraninite. The fact that the mean Th/U ratio of the granites (5.4) is similar to the global average crustal value suggests that the radioelement contents of granite were controlled by the crustal source material. Given the correlation of Zr, Y, and heavy rare earth elements for U and Th, radioelements are more likely hosted by xenotime than zircon and monazite.

• The Transactions of the Korean Institute of Electrical Engineers C
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• v.54 no.1
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• pp.13-17
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• 2005

The Pb(Zr/sub 0.52/Ti/sub 0.48/)O₃/(Ba/sub 0.6/Sr/sub 0.4/)TiO₃[PZT/BST] heterolayered thin films were deposited on Pt/Ti/SiO₂/Si substrates by using the RF sputtering method with different RF power. The PZT/BST heterolayered thin films had the tetragonal structure of the PZT phase and BST phase. Increasing the RF power. the intensity of the PZT (100), (110) peaks and BST (111) peaks were decreased and the intensity of the BST (100), (110) peaks were increased. The thickness ratio of the top layered BST thin film and the bottom layered PZT thin film was 2 to1. The atomic concentration of the Ba, Sr, Pb. Zr, Ti atoms were constant in the PZT thin films and BST thin films, respectively. The Pt atom was diffused to the PZT region in the PZT/BST heterolayered thin films deposited at condition of 60[W] RF power. Increasing the frequency, dielectric constant and loss of the PZT/BST heterolayered thin films were decreased. The dielectric constant and loss of the PZT/BST heterolayered thin films deposited with RF power of 90[W] were 406 and 3%, respectively.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2006.11a
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• pp.370-371
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• 2006

본 연구에서는 PZT박막의 강 유전 캐패시터 제작을 위한 연구로, 4-inch크기의 $SiO_2$/Pt/Ti/Si가 증착된 웨이퍼를 습식 식각하여 $SiO_2$ 패턴(0.8um)을 형성하였고, PZT박막의 캐패시터 제작을 위해 패턴 웨이퍼에 $Pb_{1.1}$($Zr_{0.52}Ti_{0.48}$)$O_3$조성을 갖는 PZT를 증착하였다. $600^{\circ}C$에서 열처리 후 페로브스카이트 구조를 가지는 PZT 박막의 CMP(chemical mechanical polishing) 공정에 따른 전기적 특성을 연구하였다. 강유전체 소자 적용을 위한 CMP 공정으로 제조된 PZT 박막 캐패시터의 P-E특성, I-V특성, 피로특성 등의 전기적 특성을 측정하였다.

• Analytical Science and Technology
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• v.21 no.2
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• pp.123-128
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• 2008

The golden turbid solution of cordierite precursor was obtained by using magnesium ethoxide in sol-gel method, while the clear solution of cordierite precursor was obtained when 5%-$Zr(OC_3H_7)_4$ solution was used in the sol-gel reaction. $SiO_2$ component was confirmed by infrared spectra showing $1045cm^{-1}$ and the stretching vibration of gelish $SiO_4$ showed $1140cm^{-1}$ and $940cm^{-1}$. The component of $Al_2O_3$ showed at $580cm^{-1}$ and network structure of $Al_2O_6$ showed at $680cm^{-1}$. The component of MgO was confirmed at $575cm^{-1}$ as the stretching vibration. X-ray diffraction analysis showed ${\mu}$-cordierite crystal was showed up at temperature above $1000^{\circ}C$ at the mole ratio of cordierite precursor and water (1:5). ${\mu}$-Cordierite and ${\alpha}$-cordierite were coexisted at $1050^{\circ}C$ for the mole ratio of cordierite precursor and ammonia (1:5) while ${\alpha}$-cordierite was only existed at $1100^{\circ}C$ for the same mole ratio as mentioned above.

• Tribology and Lubricants
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• v.35 no.6
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• pp.356-361
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• 2019

The friction and wear between machine components directly influence the energy loss and failure in various machines. Therefore, there is always a demand for finding methods to reduce friction and wear. Of the possible methods, lubrication is a widely used method for reducing friction and wear. In the case of lubrication, it is important to analyze the tribological behavior in the boundary lubrication because most of friction and wear occurs in the boundary lubrication regime. Cast iron has been regarded as a good material for industrial applications due to the excellent mechanical properties and high productivity. Especially, nodular cast iron is a material that shows better mechanical properties and wear-resistance compared with cast iron due to inclusion of spheroidal graphite. In this work, we investigated the tribological characteristics of nodular cast iron with respect to different counter parts in boundary lubrication regime. Sliding tests were conducted with SUJ2, ZrO₂, Si₃N₄ balls as counter parts using a pin-on-disk type tribotester. The results showed different friction and wear behaviors with different counter parts. The case of ZrO₂ showed the lowest wear rate in specimen and no significant ball wear. In case of SUJ2, it showed similar wear rate with ZrO₂ case in specimen and the highest friction coefficient. The case of Si₃N₄ showed the lowest friction coefficient, 33% lower than the case of SUJ2. It showed 16.9 times larger wear rate in specimen and 43% larger wear rate in ball compared to that of the SUJ2 case.

• The Korean Journal of Ceramics
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• v.2 no.2
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• pp.76-82
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• 1996

PLZT ceramics having two nominal compositions, $Pb_{1-3x/2}La_xV_{x/2}(Zr_{03}Ti_{03})O_3$ and $Pb_{1-x}La_x(Zr_{0.2}Ti_{0.5})_{1-x/4}V_{x/4}O_3$ (V: vacancy) with x=0.00~0.30, were prepared. The physical, structural, and dielectric properties were investigated by X-ray diffraction, scanning electron microscopy, Raman spectroscopy, and measurements of bulk density and dielectric constant. The two series with A-stie and B-site vacancies showed different physical, structural, dielectric properties, and, specially, Curie temperature. In comparison to PLZT with B-site vacancies, PLZT with A-site vacancies showed high Curie temperatures and low maxima of dielectric constant. Consequently, it is evident that the properties of PLZT ceramics depend on the vacancy formula adopted as a batch composition in preparation.

• Tribology and Lubricants
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• v.23 no.6
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• pp.278-282
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• 2007

Friction characteristics of a low-steel friction material were examined to investigate creep groan phenomena. The amount of three ingredients (steel fiber, $ZrSiO_4$, cashew) were changed to produce test specimens using a constrained mixture design. Tribological properties of the friction material specimens were obtained by using a 1/5 scale dynamometer. Results showed that the amount of three different ingredients strongly affected the level of friction coefficient and the difference between the static friction coefficient and the kinetic friction coefficient $({\Delta}{\mu}).\;ZrSiO_4$ and steel fiber tended to increase the average friction coefficient and aggravated the stick-slip phenomena suggesting high creep groan propensity. On the other hand, cashew tended to decrease average friction coefficient and ${\Delta}{\mu}$.