• Bulletin of the Korean Chemical Society
• /
• 제22권11호
• /
• pp.1231-1235
• /
• 2001

Pseudotetragonal ZrO0.75S whose space group is P212121 was synthesized and the cell dimensions were a=5.110(2) $\AA$, b=5.110(7) $\AA$, and c=5.198(8) $\AA.$ The space group P212121 seems to be resulted from lowering the symmetry of cubic ZrOS structure with P213 space group by lattice distortion due to the oxygen defects. In the distorted structure, bond shortening between metal-nonmetal by reduction of cell volume and alternation of Zr-Zr distance were observed. Dielectric constant and loss data of the bulk material in temperature range -170 to 20 $^{\circ}C$ and frequency range 50 Hz to 1 MHz showed that there was dielectric transition at around -70 $^{\circ}C$ originated from the relaxation of Zr-S segment. Comparing with ZrO2 exhibited the dielectirc constants, 9.0 at room temperature, ZrO0.75S showed high dielectric constant, k = 200.2 at 100 kHz. The activation energy of relaxation time due to dielectric relaxation of Zr-S was 0.47 eV (11.3 kcal/mole). According to the impedance spectra, ZrO0.75S showed more parallel circuit character between the resistance and capacitance components at the temperature (-70 $^{\circ}C)$ that the Zr-S dielectric relaxation was observed.

• 한국세라믹학회지
• /
• 제32권12호
• /
• pp.1357-1368
• /
• 1995

Nasigels of composition Na0.75Zr2PSi2O12 and Na3Zr2PSi2O12 have been synthesized by the sol-gel technique using metal alkoxide precursors. The monolithic dry gels of Na0.75Zr2PSi2O12 with no crack have been prepared by the control of the shrinkage rte, but gels of Na3Zr2PSi2O12 were impossible to prepare without cracking. The gels treated up to 80$0^{\circ}C$ led to the formtion of glass but the glasses were converted to the crystalline phases at above this temperature. Crystaline phases precipitated from the Na0.75Zr2PSi2O12 glass were NASICON-like phase, Na2Si2O5, and free Zirconia. Phase that precipitated from the Na3Zr2PSi2O12 was only rhombohedral NASICON. For Na0.75Zr2PSi2O12 gels, framework of PO4 tetrahedra and SiO4(PO4) tetrahedra formed at low temperature but changed to that of SiO4 and SiO4(PO4) tetrahedras as it were crystallized. In the case of Na3Zr2PSi2O12 gel, framework of isolated PO4 and SiO4 tetrahedras formed at low temperature but changed to SiO4(PO4) tetrahedra framework which usually formed in the NASICON crystal after crystallization at high temperature. The gels treated up to 80$0^{\circ}C$ contained the residual water. The ionic conduction was attributed to the motion of proton and Na+ ion at low (up to 150~20$0^{\circ}C$) and high temperatures, respectively. As the temperature of heat treatment increased, ionic conductivity gradaully increased with the extent of precipitation of crystalline phase.

• 자원환경지질
• /
• 제37권6호
• /
• pp.603-612
• /
• 2004

고준위 폐기물 내에 함유된 핵종을 고정화시킬 수 있는 매트릭스로써 파이로클로어$(pyrochlore;\;CaCeZr_xTi_{2-x}O_7,\;x=0.2\~2.0)$를 합성하여 상평형 관계 및 특성을 연구하였다. 합성방법은 CPS법이었으며, $1100\~1600^{\circ}C$에서 20시간 동안 가열하였다. 실험결과, 최적 합성조건은 각각의 조성에 따라 $1300\~1600^{\circ}C$로 다양하였다. 최적 합성조건에서 파이로클로어 또는 형석구조를 나타내는 산화물(이하 '형석'으로 기재)은 소량의 페롭스카이트와 더불어 $CeO_2$ 또는 $Ce_{0.75}Zr_{0.25}O_2$와 공존하였다. 또한 원조성인 $CaCeZr_xTi_{2-x}O_7$중 $x\leq0.6$인 경우 파이로클로어 구조가, 그리고 $x\geq0.6$에서는 형석구조가 안정한 것을 확인하였다. 특히 x값의 증가에 따라, Ca 및 Ti 성분이 결핍되었으며, 이와는 대조적으로 Zr과 Ce가 초과됨으로써 비화학양론적 조성을 나타내었다. 이러한 특성은 팔배위와 육배위를 차지하고 있는 원소들의 거동에 의한 것으로, 파이로클로어 또는 형석이 단일상이 아니라 페롭스카이트, $CeO_2$ 및 $Ce_{0.75}Zr_{0.25}O_2$와 공존하는 원인이 된 것으로 사료된다.

• Bulletin of the Korean Chemical Society
• /
• 제6권6호
• /
• pp.344-347
• /
• 1985

Perovskite type oxides of $SrTiO_3,SrZrO_3,and\;SrTi_{1-x}Zr_xO_3$ have been systematically synthesized at $1250^{\circ}C$and $1550^{\circ}C$ with specimens containing additions of up to x=0.9 of zirconium by solid state reactions and characterized by X-ray diffraction. X-ray diffraction studies showed that the compound $SrTi_{1-x}Zr_xO_3$ has cubic structure. The lattice paramters of $SrTi_{1-x}Zr_xO_3$ solid solutions obey the Vegard's law and fairly large increase in volume can acompany the formation of this solution with increasing Zr content(X). Assuming the lattice constants of perovskite type compounds $A(B_{1-x}B'_x)O_3$where $B_{1-x}B'_x$ is $Ti_{1-x}Zr_x$, to be a linear function of the ionic radii of B and B' ions, the disordered ion pair of $Ti^{4+}$and $Zr^{4+}$ was verified from the lattice constants of a series compounds varying x=0,0.05, 0.25, 0.5, 0.75, 0.9, and 1.0 with known isovalent pairs.

• Korean Chemical Engineering Research
• /
• 제46권1호
• /
• pp.69-75
• /
• 2008

Mechanochemical process로 제조된 $LiCoO_2$ 전극의 경우에 4.3 V 이상의 전위영역에서 용량감소현상이 두드러지게 나타난 반면에, Zr을 피복한 $LiCoO_2$의 경우에는 4.5 V의 전위에서도 안정성을 유지하였다. 본 연구에서 제작한 Zr이 피복된 $LiCoO_2$ 전극은 3.0~4.5 V 구간에서 197 mAh/g의 용량을 나타내었으며, 50 사이클 후에 96%의 방전용량을 유지하므로 전지의 안정성을 확보하였다.

• 한국세라믹학회지
• /
• 제42권9호
• /
• pp.624-630
• /
• 2005

To investigate the possibility of the $ZrO_2$ buffer layer as the insulator for the Metal-Ferroelectric-Insulator-semiconductor (MFIS) structure, $ZrO_2$ and $SrBi_2Ta_2O_9$ (SBT) thin films were deposited on the P-type Si(111) wafer by the R.F. magnetron-sputtering method. According to the process with and without the post-annealing of the $ZrO_2$ buffer layer and SBT thin film, the diffusion amount of Sr, Bi, Ta elements show slight difference through the Glow Discharge Spectrometer (GDS) analysis. From X-ray Photoelectron Spectroscopy (XPS) results, we could confirm that the post-annealing process affects the chemical binding condition of the interface between the $ZrO_2$ thin film and the Si substrate. Compared to the MFIS structure without the post-annealing of the $ZrO_2$ buffer layer, memory window value of MFlS structure with post-annealing of the $ZrO_2$ buffer layer were considerably improved. The window memory of the Pt/SBT (260 nm, $800^{\circ}C)/ZrO_2$ (20 nm) structure increases from 0.75 to 2.2 V under the applied voltage of 9 V after post-annealing.

• 한국세라믹학회지
• /
• 제20권4호
• /
• pp.289-296
• /
• 1983

The Wetting of fusion cast $Al_2O_3$ brick and $Al_2O_3 -ZrO_2$ brick by liquid Ag was studied by the sessile drop technique in Ar atmosphere. In this experiment the specimens were photographed per 2$0^{\circ}C$with increasing temperature from 96$0^{\circ}C$ melting point of Ag. And the method of photographing was carried out by shadow technique. The cosine of the contact angle increased linearly with increasing temperature in both systems. And the relation between the cosine of the contact angle and the temperature was Cos$\theta$=1.132+$0.75{\times}10^{-3}T$ for $Al_2O_3$ brick and Cos$\theta$=-1.706+$1.125{\times}10^{-3}T$ for $Al_2O_3 -ZrO_2$ brick In both systems the contact angle decreased as the surface of substrate became smoother. The work of adhesion which was 503.5ergs/$cm^2$ for $Al_2O_3$brick and 393.6 ergs/cm2 for $Al_2O_3 -ZrO_2$ brick at 96$0^{\circ}C$ increased parabolically with increasing temperature in both system.

• 한국세라믹학회지
• /
• 제38권9호
• /
• pp.860-865
• /
• 2001

본 논문은 출발물로서 2mol% CdO가 치환된 $0.05Pb(Mn_{1/3}Sb_{2/3})O_3-0.95Pb(Zr_{0.52}Ti_{0.48})O_3$ 분말을 제조 후, 닥터 블레이드 방법으로 green sheet를 제조하기 위한 slurry의 최적 공정첨가제 조성에 관한 연구를 수행하였다. 또한, 제조된 green sheet에 대하여 소결 특성과 두께 변환에 따른 유전 및 압전 특성을 관찰하였다. 공정첨가제의 첨가에 따른 점도거동을 통하여 slurry를 최적화하였고, TGA 분석으로 소결조건을 정하였으며, sheet의 특성에 미세구조와 XRD 등으로 측정하였다. 최적의 slurry는 고형분량 30vol%에 대해 분산제 3.0wt%에서 가장 안정화되었고, 이후 바인더/가소제(0.75/0.25) 3.0wt% 첨가시 점도는 7.55Pa${\cdot}$s이었다. Green sheet의 유전 및 압전 특성들은 각각 900$^{\circ}$C, 950$^{\circ}$C, 1000$^{\circ}$C로 소결온도를 증가함에 따라 다소 증가하였지만, 두께에 따른 특성들은 큰 변화가 관찰되지 않음을 확인하였다.

• Transactions on Electrical and Electronic Materials
• /
• 제16권1호
• /
• pp.1-4
• /
• 2015

(111)-oriented and random oriented $Pb_{0.8}Ba_{0.2}ZrO_3$ (PBZ) perovskite relaxor ferroelectric thin films were fabricated on Pt(111)/$TiO_x$/$SiO_2$/Si substrate by sol-gel method. Nano-scaled antiferroelectric and ferroelectric two-phase coexisted in both (111)-oriented and random oriented PBZ thin film. High dielectric tunability (${\eta}=75%$, E = 560 kV/cm) and figure-of-merit (FOM ~ 236) at room temperature was obtained in (111)-oriented thin film. Meanwhile, giant electrocaloric effect (ECE) (${\Delta}T=45.3K$ and ${\Delta}S=46.9JK^{-1}kg^{-1}$ at $598kVcm^{-1}$) at room temperature (290 K), rather than at its Curie temperature (408 K), was observed in random oriented $Pb_{0.8}Ba_{0.2}ZrO_3$ (PBZ) thin film, which makes it a promising material for the application to cooling systems near room temperature. The giant ECE as well as high dielectric tunability are attributed to the coexistence of AFE and FE phases and field-induced nano-scaled AFE to FE phase transition.

• 마이크로전자및패키징학회지
• /
• 제2권1호
• /
• pp.69-75
• /
• 1995

압전세라믹스를 제조하여 발음체 소자의 두께 직경등의 칫수 변화에 따른 압전발을 체 소자의 전기적 특성 및 압전세라믹스와 금속진동판의 상관관계를 조사하고 공명용 수지 case등을 고려하여 공진 주파수에서 효율좋은 음을 발생시킬수 있는 압전발음체를 설계하였 다. 본 실험에서 사용딘 압전세라믹스 (Pb0.95Sr0.05)(Zr0.53Ti0.47)O3+0.8wt%Nb2O5의 특성은 전 기기계 결합계수(KP)가 69%이며 기계적 품질계수(Qm)은 87 비유전율은 2100 tan$\delta$는 0.016이었다. 금속진동판의 공진주파수는 사용되는 재료의 stiffness와 관계가 있고 주파수 -impedance 특성은 재질의 음속, 밀도, Young율 등에 크게 의존하였다. 주파수 대역 2.0~ 2.2khz에서 공진시키기 위한 공명체의 설계에서 압전세라믹스의 외경과 두께가 각각 14mm, 0.1mm 이고 금속진동판의 그것이 각각 20mm, 0.1mmdlfEo 공명기는 방음공의 직경이 3.0mm, cavity의 직경이 18.5mm, cavity의 높이가 4.5mm의 구조로 설계되었을때가 최적조 건이었다.