• Bulletin of the Korean Chemical Society
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• v.22 no.11
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• pp.1231-1235
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• 2001

Pseudotetragonal ZrO0.75S whose space group is P212121 was synthesized and the cell dimensions were a=5.110(2) $\AA$, b=5.110(7) $\AA$, and c=5.198(8) $\AA.$ The space group P212121 seems to be resulted from lowering the symmetry of cubic ZrOS structure with P213 space group by lattice distortion due to the oxygen defects. In the distorted structure, bond shortening between metal-nonmetal by reduction of cell volume and alternation of Zr-Zr distance were observed. Dielectric constant and loss data of the bulk material in temperature range -170 to 20 $^{\circ}C$ and frequency range 50 Hz to 1 MHz showed that there was dielectric transition at around -70 $^{\circ}C$ originated from the relaxation of Zr-S segment. Comparing with ZrO2 exhibited the dielectirc constants, 9.0 at room temperature, ZrO0.75S showed high dielectric constant, k = 200.2 at 100 kHz. The activation energy of relaxation time due to dielectric relaxation of Zr-S was 0.47 eV (11.3 kcal/mole). According to the impedance spectra, ZrO0.75S showed more parallel circuit character between the resistance and capacitance components at the temperature (-70 $^{\circ}C)$ that the Zr-S dielectric relaxation was observed.

• Journal of the Korean Ceramic Society
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• v.32 no.12
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• pp.1357-1368
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• 1995

Nasigels of composition Na0.75Zr2PSi2O12 and Na3Zr2PSi2O12 have been synthesized by the sol-gel technique using metal alkoxide precursors. The monolithic dry gels of Na0.75Zr2PSi2O12 with no crack have been prepared by the control of the shrinkage rte, but gels of Na3Zr2PSi2O12 were impossible to prepare without cracking. The gels treated up to 80$0^{\circ}C$ led to the formtion of glass but the glasses were converted to the crystalline phases at above this temperature. Crystaline phases precipitated from the Na0.75Zr2PSi2O12 glass were NASICON-like phase, Na2Si2O5, and free Zirconia. Phase that precipitated from the Na3Zr2PSi2O12 was only rhombohedral NASICON. For Na0.75Zr2PSi2O12 gels, framework of PO4 tetrahedra and SiO4(PO4) tetrahedra formed at low temperature but changed to that of SiO4 and SiO4(PO4) tetrahedras as it were crystallized. In the case of Na3Zr2PSi2O12 gel, framework of isolated PO4 and SiO4 tetrahedras formed at low temperature but changed to SiO4(PO4) tetrahedra framework which usually formed in the NASICON crystal after crystallization at high temperature. The gels treated up to 80$0^{\circ}C$ contained the residual water. The ionic conduction was attributed to the motion of proton and Na+ ion at low (up to 150~20$0^{\circ}C$) and high temperatures, respectively. As the temperature of heat treatment increased, ionic conductivity gradaully increased with the extent of precipitation of crystalline phase.

• Economic and Environmental Geology
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• v.37 no.6 s.169
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• pp.603-612
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• 2004

Pyrochlore is known as one of the most promising materials for the immobilization of radionuclide in high level waste. This study included the synthesis, phase relation and characteristics of $pyrochlore(CaCeZr_xTi_{2-x}O_{7,\;x=0.2\~2.0)$ in the system of Ca-Ce-Zr-Ti-O. Using the CPS(Cold pressing and sintering) method, the mixtures of $CaCO3_,\;CeO_2,\;ZrO_2\;and\;TiO_2$ oxides were pressed, and sintered at $1100\~1600^{\circ}C$ for 20 hours. The optimal synthetic conditions at various compositions were differed from 1300 to $1600^{\circ}C$ Even in the optimal temperatures, pyrochlore or fluorite coexisted with minor amount of perovskite, $CeO_2\;or\;Ce_{0.75}Zr_{0.25}O_2$. It was confirmed that pyrochlore and fluorite structures were stable at $x\leq0.6\;and\;x\geq1.0$, respectively. Especially, the compositions of pyrochlore or fluorite showed non-stoichiometric compositions in that contents of Ca and Ti were more deficient and those of Zr and Ce were more excess than batch compositions with the increase of x value. These characteristics stemmed from the behavior of elements occupied at eight- and six-coordinated site, and then caused the coexistence of perovskite, $CeO_2\;or\;Ce_{0.75}Zr_{0.25}O_2$ along with pyrochlore or fluorite.

• Bulletin of the Korean Chemical Society
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• v.6 no.6
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• pp.344-347
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• 1985

Perovskite type oxides of $SrTiO_3,SrZrO_3,and\;SrTi_{1-x}Zr_xO_3$ have been systematically synthesized at $1250^{\circ}C$and $1550^{\circ}C$ with specimens containing additions of up to x=0.9 of zirconium by solid state reactions and characterized by X-ray diffraction. X-ray diffraction studies showed that the compound $SrTi_{1-x}Zr_xO_3$ has cubic structure. The lattice paramters of $SrTi_{1-x}Zr_xO_3$ solid solutions obey the Vegard's law and fairly large increase in volume can acompany the formation of this solution with increasing Zr content(X). Assuming the lattice constants of perovskite type compounds $A(B_{1-x}B'_x)O_3$where $B_{1-x}B'_x$ is $Ti_{1-x}Zr_x$, to be a linear function of the ionic radii of B and B' ions, the disordered ion pair of $Ti^{4+}$and $Zr^{4+}$ was verified from the lattice constants of a series compounds varying x=0,0.05, 0.25, 0.5, 0.75, 0.9, and 1.0 with known isovalent pairs.

• Korean Chemical Engineering Research
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• v.46 no.1
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• pp.69-75
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• 2008

Discharge capacity of $LiCoO_2$ in preparation by mechanochemical process decreased remarkably over 4.3V. However, Zr coating of $LiCoO_2$ showed very stable electrochemical properties up to 4.5V. Zr coating of $LiCoO_2$ in this experiment showed the discharge capacity of 197 mAh/g at 3.0-4.5V, and it maintained 96% of the initial discharge capacity after 50 cycle of charge/discharge.

• Journal of the Korean Ceramic Society
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• v.42 no.9 s.280
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• pp.624-630
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• 2005

To investigate the possibility of the $ZrO_2$ buffer layer as the insulator for the Metal-Ferroelectric-Insulator-semiconductor (MFIS) structure, $ZrO_2$ and $SrBi_2Ta_2O_9$ (SBT) thin films were deposited on the P-type Si(111) wafer by the R.F. magnetron-sputtering method. According to the process with and without the post-annealing of the $ZrO_2$ buffer layer and SBT thin film, the diffusion amount of Sr, Bi, Ta elements show slight difference through the Glow Discharge Spectrometer (GDS) analysis. From X-ray Photoelectron Spectroscopy (XPS) results, we could confirm that the post-annealing process affects the chemical binding condition of the interface between the $ZrO_2$ thin film and the Si substrate. Compared to the MFIS structure without the post-annealing of the $ZrO_2$ buffer layer, memory window value of MFlS structure with post-annealing of the $ZrO_2$ buffer layer were considerably improved. The window memory of the Pt/SBT (260 nm, $800^{\circ}C)/ZrO_2$ (20 nm) structure increases from 0.75 to 2.2 V under the applied voltage of 9 V after post-annealing.

• Journal of the Korean Ceramic Society
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• v.20 no.4
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• pp.289-296
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• 1983

The Wetting of fusion cast $Al_2O_3$ brick and $Al_2O_3 -ZrO_2$ brick by liquid Ag was studied by the sessile drop technique in Ar atmosphere. In this experiment the specimens were photographed per 2$0^{\circ}C$with increasing temperature from 96$0^{\circ}C$ melting point of Ag. And the method of photographing was carried out by shadow technique. The cosine of the contact angle increased linearly with increasing temperature in both systems. And the relation between the cosine of the contact angle and the temperature was Cos$\theta$=1.132+$0.75{\times}10^{-3}T$ for $Al_2O_3$ brick and Cos$\theta$=-1.706+$1.125{\times}10^{-3}T$ for $Al_2O_3 -ZrO_2$ brick In both systems the contact angle decreased as the surface of substrate became smoother. The work of adhesion which was 503.5ergs/$cm^2$ for $Al_2O_3$brick and 393.6 ergs/cm2 for $Al_2O_3 -ZrO_2$ brick at 96$0^{\circ}C$ increased parabolically with increasing temperature in both system.

• Journal of the Korean Ceramic Society
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• v.38 no.9
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• pp.860-865
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• 2001

After manufacturing 2mol% CdO substitute $0.05Pb(Mn_{1/3}Sb_{2/3})O_3-0.95Pb(Zr_{0.52}Ti_{0.48})O_3$ piezoelectric ceramics powder as starting material, to manufacture green sheets using Doctor Blade method. The optimum composition of slurry was studied. Moreover, the sintering properties and the dielectric and piezoelectric properties with variation a thickness of the manufactured sheets were investigated. The optimum of slurry was investigated by the rheology with addition of additives, the sintering condition was decided by TGA. And the properties of sheet were investigated through SEM. XRD. The optimum of slurry was the stablest at dispersant 3.0 wt% to solid loading 30vol%. After, at addition of binder/plasticizer(0.75/0.25) 3.0wt%, viscosity was 7.55Pa${\cdot}$s. The dielectric and piezoelectric properties of the sheet were increased a little with the increasing of sintering temperature but were not variable with variation of sheet thickness.

• Transactions on Electrical and Electronic Materials
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• v.16 no.1
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• pp.1-4
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• 2015

(111)-oriented and random oriented $Pb_{0.8}Ba_{0.2}ZrO_3$ (PBZ) perovskite relaxor ferroelectric thin films were fabricated on Pt(111)/$TiO_x$/$SiO_2$/Si substrate by sol-gel method. Nano-scaled antiferroelectric and ferroelectric two-phase coexisted in both (111)-oriented and random oriented PBZ thin film. High dielectric tunability (${\eta}=75%$, E = 560 kV/cm) and figure-of-merit (FOM ~ 236) at room temperature was obtained in (111)-oriented thin film. Meanwhile, giant electrocaloric effect (ECE) (${\Delta}T=45.3K$ and ${\Delta}S=46.9JK^{-1}kg^{-1}$ at $598kVcm^{-1}$) at room temperature (290 K), rather than at its Curie temperature (408 K), was observed in random oriented $Pb_{0.8}Ba_{0.2}ZrO_3$ (PBZ) thin film, which makes it a promising material for the application to cooling systems near room temperature. The giant ECE as well as high dielectric tunability are attributed to the coexistence of AFE and FE phases and field-induced nano-scaled AFE to FE phase transition.

• Journal of the Microelectronics and Packaging Society
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• v.2 no.1
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• pp.69-75
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• 1995

압전세라믹스를 제조하여 발음체 소자의 두께 직경등의 칫수 변화에 따른 압전발을 체 소자의 전기적 특성 및 압전세라믹스와 금속진동판의 상관관계를 조사하고 공명용 수지 case등을 고려하여 공진 주파수에서 효율좋은 음을 발생시킬수 있는 압전발음체를 설계하였 다. 본 실험에서 사용딘 압전세라믹스 (Pb0.95Sr0.05)(Zr0.53Ti0.47)O3+0.8wt%Nb2O5의 특성은 전 기기계 결합계수(KP)가 69%이며 기계적 품질계수(Qm)은 87 비유전율은 2100 tan$\delta$는 0.016이었다. 금속진동판의 공진주파수는 사용되는 재료의 stiffness와 관계가 있고 주파수 -impedance 특성은 재질의 음속, 밀도, Young율 등에 크게 의존하였다. 주파수 대역 2.0~ 2.2khz에서 공진시키기 위한 공명체의 설계에서 압전세라믹스의 외경과 두께가 각각 14mm, 0.1mm 이고 금속진동판의 그것이 각각 20mm, 0.1mmdlfEo 공명기는 방음공의 직경이 3.0mm, cavity의 직경이 18.5mm, cavity의 높이가 4.5mm의 구조로 설계되었을때가 최적조 건이었다.