• Bulletin of the Korean Chemical Society
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• v.31 no.2
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• pp.355-359
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• 2010

A $Li[Co_{1/3}Ni_{1/3}Mn_{1/3}]O_2$ cathode was modified by applying a $ZrF_x$ coating. The surface-modified cathodes were characterized by XRD, SEM, EDS, TEM techniques. XRD patterns of $ZrF_x$-coated $Li[Co_{1/3}Ni_{1/3}Mn_{1/3}]O_2$ revealed that the coating did not affect the crystal structure of the parent powder. SEM and TEM images showed that $ZrF_x$ nano-particles were formed as a coating layer, and EDS data confirmed that $ZrF_x$ distributed uniformly on the surface the powder. Capacity retention of coated samples at high C rates was superior to that of pristine sample. However, as the coating concentration increases beyond the optimum concentration, the rate capability was deteriorated. Whereas, as the increase of coating concentration to 2.0 wt %, the cyclic performances of the electrodes under the severe conditions (high cut-off voltage, 4.8 V, and high measurement temperature, $55^{\circ}C$) were improved considerably.

• Journal of the Korean Ceramic Society
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• v.38 no.11
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• pp.1042-1045
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• 2001

Microwave dielectric properties of Ba(Zn$_{1}$3/Nb$_{2}$3/) $O_3$-Sr(Zn$_{1}$3/Nb$_{2}$3/) $O_3$(BZN-SZN) system were investigated as a function of sintering temperature and Zr $O_2$content. Density was increased and the temperature coefficient of resonant frequency (TCF, $\tau$$_{f}$) decreased with increasing sintering temperature. However dielectric constant (K) and Q$\times$f value did not change markedly with the sintering temperature. For the samples sintered at the same temperature, density, dielectric constant, and Q$\times$f value were increased and TCF was decreased with increasing Zr $O_2$concentration. Especially, the dielectric constant of the sample increased with x and exhibited the maximum value ($\varepsilon$$_{r}$=41) when x=0.6 at 1575$^{\circ}C$ sintered. TCF decreased with x and exhibited the minimum value ($\tau$$_{f}$=+0.8ppm/$^{\circ}C$) when x=1.0..0.

• The Korean Journal of Ceramics
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• v.5 no.4
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• pp.375-378
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• 1999

In tho XRD study of $56ZrF_4 \cdot34BaF_2 \cdot4AIF_3 \cdot(6-x)LaF_3 \cdotxLnF_3$ glassdLn=Ce, Nd, Gd, Th), halo pattern charactarktic fo an amorphous sample appeared. When the halo peak angle ($\theta_p$) was converted into a wavenumber with $Qp=4\pi sinG\pi/\lambda(\lambda$ is the wavolongth of the radialion used), it was found that the Qp values varied almost liuearly with the concentration 01 $LnF_3$. The emissiou spect1.a of $Ce^{3-}$-containing fluoride glasses nnder 273 nm excitation had a peak maximum at ea. 300 nm $(Ce^{3+}$ 5d-4f- transition). The maximal intensity of the fluorescence was observed when the $CeF_3$, content was extremely low (ca. 1 mol%j. DTA measurement revealed tbat these fluoride glasses had two crystallization temperatures. In $56ZrF_4. 34BaF_2. 4NF_3. (6-x)LaF_3 .xNdF_3$ glasses, the actmation energies of crystallization obtained from a Kssinger plot were 1.7 and 5.0 eV for the glass with x=2, and 1.9 and 5.6 eV for the glass with x=4.

• Korean Journal of Materials Research
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• v.10 no.9
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• pp.607-611
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• 2000

Zr modified $(Ba_{1-x},Sr_x)TiO_3$ thin films as capacitor for high density DRAM were deposited by r.f. magnetron sputtering. The films deposited at various chamber pressure exhibited a polycrystalline structure. The Zr/Ti ratio of the films increased significantly with decreasing the chamber pressure and this variation affected the microstructure and surface roughness of films When chamber pressure increased dielectric constant of the films effected due to decrease of Zr. The thin films prepared in this study show dielectric constant of 380 to 525 at 100KHz. The variation of capacitance and polarization measured as a function of bias voltage suggested that all films were paraelectric phases. Leakage current exhibited smaller value as chamber pressure decrease and the leakage current density of the films deposited above 10mTorr was $10^{-7}~10^{-8}A/cm^2$ order at 200kV/cm. $(Ba_{1-x},Sr_x)(Ti_{1-y},Zr_y)O_3$ thin films in this study appeared to be potential thin film capacitor for high density DRAM.

• Korean Journal of Materials Research
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• v.11 no.3
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• pp.171-177
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• 2001

The thermal and mechanical properties of amorphous Z $r_{62-x}$N $i_{10}$C $u_{20}$A $l_{8}$ $Ti_{x}$ (x=3, 6, 9at%) alloys were investigated. The crystallization process was confirmed as amorphous longrightarrow amorphous + Z $r_2$A $l_3$+ Zr + (Ni,Ti) longrightarrow Z $r_2$Cu + Al + (Ni,Ti) for 3at%Ti, amorphous longrightarrow amorphous + Al longrightarrow $Al_2$Ti + NiZr + CuTi for 6at%Ti and amorphous longrightarrow amorphous + Zr + Al longrightarrow Zr + $Al_2$Zr + Al $Ti_3$+ CuTi for 9at%Ti. lickers hardness ( $H_{v}$ ) increased with increasing volume fraction( $V_{f}$ ) of pricipitates for all concerned compositions. Tensile fracture strength ($\sigma_{f}$ ) showed a maximum value 1219MPa at $V_{f}$ = 38% for 3at%Ti, 1203MPa at $V_{f}$ = 2% for 6at%Ti and 1350MPa at $V_{f}$ = 5% for 9at%Ti. The $\sigma_{f}$ was rapidly decreased after showing the maximum value. The $V_{f}$ corresponding to rapidly decreased $\sigma_{f}$ coincided with the $V_{f}$ transited from ductile to brittle fracture surface.ace.

• Proceedings of the Korean Institute of Surface Engineering Conference
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• 2006.04a
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• pp.125-126
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• 2006

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.13 no.8
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• pp.675-680
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• 2000

In this study the temperature coefficient of resonant frequency(TC $F_{r}$) dielectric and piezoelectric properties of Pb[(S $b_{1}$2//N $b_{1}$2/)$_{0.065}$)-(Z $r_{x}$, $Ti_{1-x}$ )$_{0.90}$] $O_3$ceramics were investigated with Zr/Ti ratio. The compositions near the morphotropic phase boundary (MPB) appeared when Zr/Ti ratio was 49.5/50.5 The dielectric constant and electromechanical coupling factor( $k_{p}$) also showed the highest values of 1,257, 0.653 respectively when the Zr/Ti ratio was 49.5/50.5 Moreover the mechanical quality factor( $Q_{m}$) showed th lowest value of 713 when the Zr/Ti ratio. The temperature coefficient of resonant frequency(TC $F_{r}$) abruptly change at the morphotropic phase boundary(MPB) which existed between the rhombohedral phase with highly negative TC $F_{r}$ of -106ppm/$^{\circ}C$ and the tetragonal phase with highly positive TC $F_{r}$ of +64pp $m^{\circ}C$ as Zr/Ti ratio varied from 50/50 to 49.5/50.5.50.5..50.5.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.4 no.3
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• pp.252-261
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• 1994

The $(Ba_{1-X}Sr_X)ZrO_3$ powder showing chemically pure and fine particle size was attempted to be synthesized by the oxalate method. The objective of this study is to determine the optimum synthesis condition of stable $(Ba_{1-X}Sr_X)ZrO_3$ powder in terms of the temperatures coefficient of resonant frequency ${\tau}_f$ by examining the microstructure and dielectric properties of the synthesized powder. The six compounds (x=0, 0.2, 0.4, 0.6, 0.8, 1) of $(Ba_{1-X}Sr_X)ZrO_3$ were prepared by the oxalate method, and then calcined at $1000^{\circ}C$ to obtain the crystalline $(Ba_{1-X}Sr_X)ZrO_3$ powder. The synthesized powder showed the globular-shape and average particle size of less than $0.2 \mu\textrm{m}$. The composition of x=0.5, i.e., half of Ba was replaced by Sr, is experted to show the zero value of temperatures coefficient of capacitance ${\tau}_c$.

• Journal of the Korean Ceramic Society
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• v.31 no.2
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• pp.201-205
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• 1994

Glasses being prepared, measurements and investigations of glass transition temperature and IR edge optical absorption have been performed for the compositions of 56ZrF4-14BaF2-6LaF3-4AlF3-(20-x)NaF-xLiF. Values for transition temperature of these glasses decrease in proportion to increasing LiF mol%(x) in the range of 0

• Applied Science and Convergence Technology
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• v.26 no.4
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• pp.70-73
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• 2017

The dielectric constant and loss of poling/non-poling was measured in the $Pb_{1-3x/2}La_x[(Mg_{1/3}Ta_{2/3})_{0.66}Zr_{0.34}]O_3$ samples. The addition of $La^{3+}$ to the $Pb_{1-3x/2}La_x[(Mg_{1/3}Ta_{2/3})_{0.66}Zr_{0.34}]O_3$ did not cause a large change in grain size. But the addition of $La^{3+}$ did show transition temperature, which shifted toward low temperature in the $Pb[(Mg_{1/3}Ta_{2/3})Zr]O_3$ systems. In addition, the dielectric and pyroelectric properties (${\varepsilon}{\sim}20000$, $p{\sim}0.03C/m^2K$) of this system using $La^{3+}$ have been greatly improved. Pyroelectrics $Pb_{0.97}La_{0.02}(Mg_{1/3}Ta_{2/3})_{0.66}Zr_{0.34}]O_3$ system was found to have a relatively high ferroelectric FOMs ($F_V{\sim}0.035m^2/C$, $F_D{\sim}0.52{\times}10^{-4}Pa^{-1/2}$) at room temperature. Spontaneous polarization showed a value of $0.27{\sim}0.35C/m^2$ in the composition added to $La^{3+}$. The piezoelectric constant ($d_{33}=350{\sim}490pC/N$) and electromechanical coupling factor ($k_P=0.25{\sim}0.35$) are obtained in $Pb_{1-3x/2}La_x[(Mg_{1/3}Ta_{2/3})_{0.66}Zr_{0.34}]O_3$ compositions with $La^{3+}$ dopant.