• 한국전기전자재료학회논문지
• /
• 제16권4호
• /
• pp.272-279
• /
• 2003

In this work Zn$_4$GeSe$_{6}$ :CO$^{2+}$ single crystals were grown by the chemical transport reaction method in which the iodine was used as the transporting agent. The Zn$_4$GeSe$_{6}$ :CO$^{2+}$ single crystal was found to have a monoclinic structure. The optical absorption spectra of grown crystals were investigated using a temperature-controlled UV-VIS -NIR spectrophotometer. The temperature dependence of band-edge absorption was in a good agreement with the Varshni equation. The observed impurity absorption peaks could be explained as arising from the electron transition between energy levels of Co$^{2+}$ ion sited at the T$_{d}$ symmetry point.

• E2M - 전기 전자와 첨단 소재
• /
• 제10권2호
• /
• pp.105-112
• /
• 1997

Undoped and Co$^{2+}$-doped Zn$_{4}$GeSe$_{6}$ single crystals were grown by the Chemical Transport Reaction method using iodine as a transporting agent. The crystal structure of these compounds determined by X-ray diffraction analysis was monoclinic structure. The direct energy gaps of these compounds were measured and the temperature dependence of the optical energy gap were closely investigated over the temperature range 10-290K. The temperature dependence of the optical energy gap is well presented by the Varshni equation. Also the optical absorption peaks of Zn$_{4}$GeSe$_{6}$ :Co$^{2+}$ single crystal observed, centered at 5437, 6079, 7142, 12950, 13462, 14786 and 15735 $cm^{-1}$ /, can be explained in terms of the electronic transitions of Co$^{2+}$ ions located at Td symmetry of the host materials. According to the crystal-field theory, the crystal-field, Racah and spin-orbit coupling parameters obtained from the absorption bands are given by Dq = 361$cm^{-1}$ /, B = 655$cm^{-1}$ / and .lambda. = 284$cm^{-1}$ / respectively.ively.

• 한국전기전자재료학회:학술대회논문집
• /
• 한국전기전자재료학회 2002년도 제4회 영호남학술대회 논문집
• /
• pp.25-30
• /
• 2002

The ternary semiconducting compounds of the $A_{4}BX_{6}$(A=Cd, Zn, Hg; B=Si, Sn, Ge; X=S, Se, Te) type exhibit strong fluorescence and high photosensitivity in the visible and near infrared ranges, so these are supposed to be materials applicable to photoelectrical devices. These materials were synthesized and single crystals were first grown by Nitsche, who identified the crystal structure of the single crystals. In this paper. author describe the undoped and $Co^{2+}$-doped $Zn_{4}SnSe_{6}$ single crystals were grown by the chemical transport reaction(CTR) method using iodine of $6mg/cm^{3}$ as a transport agent. For the crystal. growth, the temperature gradient of the CTR furnace was kep at $700^{\circ}C$ for the source aone and at $820^{\circ}C$ for the growth zone for 7-days. It was found from the analysis of x-ray diffraction that undoped and $Co^{2+}$-doped $Zn_{4}SnSe_{6}$ compounds have a monoclinic structure. The optical absorption spectra obtained near the fundamental absorption edge showed that these compounds have a direct energy gaps. These temperature dependence of the optical energy gap were closely investigated over the temperature range 10[K]~300[K]

• 한국광학회지
• /
• 제2권4호
• /
• pp.179-185
• /
• 1991

적외선 광원으로 $CO_2$ 레이저를 사용하였고 광속을 2.5 cm의 직경으로 확대하여 Twyman-Green 간섭계를 구성하였다. 각종 렌즈는 Ge 렌즈로, 광속분리기는 ZnSe 평행판으로 택하였다. Pyro-electric vidicon camera에 의해 CRT monitor에 간섭무늬를 제시하며 image card에 의해 digitize되고 PC로 강도분포가 입력되어 data처리된다. 여기서, 적외선 간섭무늬는 thermal paper 상에 기록하였다. 가시영역에서는 He-Nefp이저를 광원으로 하고 CCD 카메라로 검출하여 CRT monitor에 제시하였다. 파면수차함수, PSF, OTF가 계산되어 3차원 그래프로 제시되며 프린트 된다.