• Journal of the Korean Magnetics Society
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• v.25 no.5
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• pp.156-161
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• 2015

The electronic structures of the potential candidate semiconductor nanoparticles for dye-sensitized solar cell (DSSC), such as $ZnSnO_3$ and $Zn_2SnO_4$, have been investigated by employing X-ray photoemission spectroscopy (XPS). The measured X-ray diffraction patterns show that $ZnSnO_3$ and $Zn_2SnO_4$ samples have the single-phase ilmenite-type structure and the inverse spinel structure, respectively. The measured Zn 2p and Sn 3d core-level XPS spectra reveal that the valence states of Zn and Sn ions are divalent (Zn 2+) and tetravalent (Sn 4+), respectively, in both $ZnSnO_3$ and $Zn_2SnO_4$. On the other hand, the shallow core-level measurements show that the binding energies of Sn 4d and Zn 3d core levels in $ZnSnO_3$ are lower than those in $Zn_2SnO_4$. This work provides the information on the valence states of Zn and Sn ions and their chemical bonding in $ZnSnO_3$ and $Zn_2SnO_4$.

• Journal of the Korean Ceramic Society
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• v.31 no.2
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• pp.213-219
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• 1994

The formations of spinel and colors of ZnO-Fe2O3-TiO2-SnO2 system have been researched on the basis of ZnO-Fe2O3 system. Specimens were prepared by substituting Fe3+, with Ti4+ or Sn4+ when mole ratios between Fe3+ and Ti4+ or between Fe3+ and Sn4+ were 0.2 mole. The reflectance measurement and X-ray diffraction analysis of the formation of spinel and the colors of there specimens were carried out. ZnO-Fe2O3 system in which Fe2O3 was substituted with SnO2 and TiO2 was formed the spinel structure of 2ZnO.TiO2, 2ZnO.SnO2, ZnO.Fe2O3. The stable stains which were colored with yellow and brown could be manufactured.

• Journal of Sensor Science and Technology
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• v.11 no.3
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• pp.155-162
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• 2002

The sensing properties of carbon monooxide were investigated as a function of mixing ratio and the lamination structure of 3mol% ZnO-doped $SnO_2$ and 3mol% $SnO_2$-doped ZnO. The lamination structures were fabricared monolayer, double layer, and hetero layer of $SnO_2$, Zno, and theirs mixture composition using thick film process. There was no second phase by the reaction of $SnO_2$ and ZnO. The conductance was decreased by the addition of ZnO in $SnO_2$, but it was increased with the addition of $SnO_2$ in ZnO. The conductance was increased with temperature and the inlet of CO. There was no improvement of sensitivity in the structure of mono- and double-layer. The hetero-layer structure, however, of $SnO_2$ 3ZnO-ZnO $3SnO_2$ showed the higher resistivity and the highest sensitivity. Ohmic characteristics was confirmed by the linear properties for I-V measurements.

• Journal of Electrochemical Science and Technology
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• v.12 no.2
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• pp.173-187
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• 2021

In the present research, a simple electrochemical sensor based on a carbon paste electrode (CPE) modified with ZnO-Zn₂SnO₄-SnO₂ and graphene (ZnO-Zn₂SnO₄-SnO₂/Gr/CPE) was developed for the direct, simultaneous and individual electrochemical measurement of Acetaminophen (AC), Caffeine (Caf) and Ascorbic acid (AA). The synthesized nano-materials were investigated using scanning electron microscopy, X-ray Diffraction, Fourier-transform infrared spectroscopy, and electrochemical impedance spectroscopy techniques. Cyclic voltammetry and differential pulse voltammetry were applied for electrochemical investigation ZnO-Zn₂SnO₄-SnO₂/Gr/CPE, and the impact of scan rate and the concentration of H⁺ on the electrode's responses were investigated. The voltammograms showed a linear relationship between the response of the electrode for individual oxidation of AA, AC and, Caf in the range of 0.021-120, 0.018-85.3, and 0.02-97.51 μM with the detection limit of 8.94, 6.66 and 7.09 nM (S/N = 3), respectively. Also, the amperometric technique was applied for the measuring of the target molecules in the range of 0.013-16, 0.008-12 and, 0.01-14 μM for AA, AC and, Caf with the detection limit of 6.28, 3.64 and 3.85 nM, respectively. Besides, the ZnO-Zn₂SnO₄-SnO₂/Gr/CPE shows an excellent selectivity, stability, repeatability, and reproducibility for the determination of AA, AC and, Caf. Finally, the proposed sensor was successfully used to show the amount of AA, AC and, Caf in urine, blood serum samples with recoveries ranging between 95.8% and 104.06%.

• Current Photovoltaic Research
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• v.3 no.2
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• pp.54-60
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• 2015

ZnSnO thin films were deposited by atomic layer deposition (ALD) process using diethyl zinc ($Zn(C_2H_5)_2$) and tetrakis (dimethylamino) tin ($Sn(C_2H_6N)_4$) as metal precursors and water vapor as a reactant. ALD process has several advantages over other deposition methods such as precise thickness control, good conformality, and good uniformity for large area. The composition of ZnSnO thin films was controlled by varying the ratio of ZnO and $SnO_2$ ALD cycles. The ALD ZnSnO film was an amorphous state. The band gap of ZnSnO thin films increased as the Sn content increased. The CIGS solar cell using ZnSnO buffer layer showed about 18% energy conversion efficiency. With such a high efficiency with the ALD ZnSnO buffer and no light soaking effect, AlD ZnSnO buffer mighty be a good candidate to replace Zn(S,O) buffer in CIGSsolar cells.

• Journal of the Microelectronics and Packaging Society
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• v.12 no.1 s.34
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• pp.35-40
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• 2005

The oxidation of pure Sn and Sn-0.7Cu, Sn-3.5Ag, Sn-lZn, and Sn-9Zn alloys at $150^{\circ}C$ was investigated. Both the chemical nature and the amount of oxides were characterized using electrochemical reduction analysis by measuring the electrolytic reduction potential and total transferred electrical charges. X-ray photoelectron spectroscopy (XPS) was also conducted to support the results of reduction analysis. The effect of Cu, Ag and Zn addition on surface oxidation of Sn alloys is reported. For Sn, Sn-0.7Cu and Sn-3.5Ag, SnO grew first and then the mixture of SnO and $SnO_2$ was found. $SnO_2$ grew predominantly for a long-time aging. For Zn containing Sn alloys, both ZnO and $SnO_2$ were formed. Zn promotes the formation of $SnO_2$. Sn oxide growth rate of Pb-free solder alloys was also discussed in terms of alloying elements.

• Proceedings of the Korean Vacuum Society Conference
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• 2010.02a
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• pp.198-198
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• 2010

산화물 반도체는 넓은 밴드갭을 가지고 있어 가시광에서 투명하며 높은 이동도로 디스플레이 구동 회로 집적에 유리하다. 또한 가격 및 공정 측면에서도 기존의 Si 기판 소자에 비해 여러 장점을 가지고 있어 차세대 디스플레이의 핵심 기술로 산화물반도체에 대한 관심이 높아지고 있다. 본 연구는 RF 동시 스퍼터링법을 이용하여 Zn-Sn-O 박막을 제조하고, 그 전기적, 광학적, 구조적 특성에 대해 조사하였다. 일정한 증착 온도($100^{\circ}C$)에서 ZnO와 $SnO_2$ 타켓의 인가 파워를 조절하여 Sn/(Zn+Sn) 성분비가 약 40~85%인 Zn-Sn-O 박막을 제조하였다. Sn 함량이 증가할수록 박막의 비저항은 약 $2{\times}10^{-1}$ (Sn 45%)에서 약 $2\;{\times}\;10^{-2}\;{\Omega}{\cdot}cm$ (Sn 67%)까지 감소하다가 다시 증가하는 경향을 보였다. 이 때 캐리어 농도는 $3\;{\times}\;10^{18}$에서 $4\;{\times}\;10^{19}\;cm^{-3}$으로 증가하였으며, 이동도는 11에서 $8\;cm^2/V{\cdot}s$로 약간 감소하였다. XRD분석결과, 제조된 모든 Zn-Sn-O 박막은 비정질 구조를 가짐을 확인하였다. 투과율은 박막 내 Sn함량 증가에 따라 감소하나 모든 시편이 약 70%이상의 투과도를 나타내었다. Zn-Sn-O 박막의 Ga 도핑 영향을 확인하기 위해 ZnO 타켓 대신 갈륨이 5.7 wt.% 도핑된 GZO 타켓을 사용하여 동일한 공정조건에서 박막을 제조하였다. Ga이 첨가된 Zn-Sn-O 박막은 구조적 특성과 광학적 특성에서는 큰 차이를 보이지 않았으나, 전기적 특성의 뚜렷한 변화가 관찰되었다. Sn 함량이 45%인 Zn-Sn-O 박막의 경우, 캐리어 농도가 $3.1\;{\times}\;10^{18}$에서 Ga 도핑 효과로 인해 $1.7\;{\times}\;10^{17}\;cm^{-3}$으로 크게 감소하고 이동도는 11에서 $20\;cm^2/V{\cdot}s$로 증가하였다. 따라서 본 연구는 Zn-Sn-O 비정질 박막에 Ga을 도핑함으로써 산화물 반도체재료로서 요구되는 물성을 만족시킬 수 있다는 가능성을 제시하였다.

• Journal of the Korean Ceramic Society
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• v.38 no.3
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• pp.287-292
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• 2001

본 실험은 목적은 CRT(Cathode Ray Tube)용 청색 형광체인 ZnS:Ag 분말 표면에 액상법으로 SnO$_2$를 균일하게 코팅하는 공정조건을 연구하는 것이다. 용매로서 물을 사용하고, Sn의 공급물질로서 SnCl$_4$.4$H_2O$, 침전 촉매로서 CO(NH$_2$)$_2$를 각각 사용하여, 균일 침전 방법으로 ZnS:Ag 분말표면에 SnO$_2$를 코팅할 수 있었다. 초기에 첨가되는 SnCl$_4$.4$H_2O$의 량이 Sn/Zn의 몰비기준으로 0.017인 경우에 ZnS:Ag 분말표면에 Sn(OH)$_4$가 균일하게 코팅되지만, 그 이상 첨가되면 과량의 Sn(OH)$_4$가 입자들 사이에 응집되었다. 코팅된 Sn(OH)$_4$는 비정질 구조로 규명되었으며, 이를 SnO$_2$결정상으로 전이시키기 위하여 300~$700^{\circ}C$ 범위 내에서 열처리를 행하였다. 비정질 Sn(OH)$_4$는 20$0^{\circ}C$이하에서 탈수되었고 45$0^{\circ}C$부터 SnO$_2$로 결정화되기 시작하였다. 순수한 ZnS의 경우, 50$0^{\circ}C$이하에서는 상변화가 없으나, $600^{\circ}C$에서 일부 산화되었으며 $700^{\circ}C$에서는 완전히 ZnO로 산화되므로, ZnS의 산화방지 및 SnO$_2$의 결정화를 동시에 만족하는 최고 열처리온도는 50$0^{\circ}C$로 규명되었다. 그러나 ZnS에 SnO$_2$가 코팅된 시편의 경우에는 $600^{\circ}C$가 되어도 ZnS 상이 거의 산화되지 않았고, $700^{\circ}C$에서도 ZnS와 ZnO 상이 공존한 것으로 보아 SnO$_2$코팅이 ZnS의 산화를 억제하는 것으로 나타났다.

• Journal of the Korean Ceramic Society
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• v.14 no.3
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• pp.187-192
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• 1977

For the purpose researching to the influence of tetrahedral and octahedral preference of cations of $Ni^{2+}$, $Ti^{4+}$ upon the formation and the color development of the $ZnO-SnO_2$ spinel containing $Ni^{2+}$ and $Ti^{4+}$ ions, the gradual substitution of $Ni^{2+}$ ions for $Zn^{2+}$ ions and of $Ti^{4+}$ ions for $Sn^{4+}$ ions of the spinel in NiO-ZnO-$SnO_2$-$TiO_2$ system was carried out. On samples prepared by calcining the oxide and basic cabonate mixtures at $1300^{\circ}C$ for 2 hours, the X-ray analysis, measurement of reflectance and the test of their stabilaity as a glaze pigment were also carried out. The results are summarized as follows 1) Single spinel was formed completely to x=1 in the $xNiO\cdot(2-x)ZnO\cdot{SnO}_2$system, and gave brilliant lightgreen hue. Moreover, $NiO\cdot{ZnO}\cdot{SnO}_2$ formed easily spinel than $NiO\cdot{MgO}\cdot{SnO}_2$ because Zn^{2+}$ ions had more strong tetrahedral preference than $Mg^{2+}$ ions. 2) As the gradual substitution of $Ti^{4+}$ ions for $Sn^{4+}$ ions in $NiO\cdot{MgO}\cdot{SnO}_2$ system, the spinels formed well and was nearly not changed in the hue. 3) The results of glaze test. (1) As the gradual substitution of $Ni^{2+}$ ions for $Zn^{2+}$ ions, the color changed from dull white to graish broun gradually in calcium-zinc glaze and calcium glaze, and from white to beige in tile glaze. (2) As the gradual substitution of $Ti^{4+}$ ions for $Sn^{4+}$ ions in $NiO-ZnO-SnO_2-TiO_2$ system, the color was become dull generally and was not change in tile glaze.

• Proceedings of the Korean Vacuum Society Conference
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• 2010.02a
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• pp.183-183
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• 2010

본 연구에서는 기존의 투명전도박막(ITO) 재료인 Sn 성분을 Zn로 치환하여, Zn의 성분함량 변 화에 따른 투명전도박막의 특성을 조사하기 위하여, Zn이 100% 치환된 $In_2O_{3(90wt%)}-ZnO_(10wt%)$ (IZO) 그리고 Zn이 3 %와 7 % 치환된 $In_2O_{3(90wt%)}-ZnO_{(3wt%)}-SnO_{2(7wt%)}$, $In_2O_{3(90wt%)}-ZnO_{(7wt%)}-SnO_{2(3wt%)}$ (IZTO) 등의 타겟을 제작하여 RF-magnetron sputtering 법으로 투명전도박막을 성장하였다. 각각의 박막에 대해서 전기적 특성조사와 가시광선영역에서의 광투과도 특성, 성막 특성, 그리고 구조적 특성을 조사하였다. Sn이 100% Zn으로 치환된 IZO 박막의 경우 조성 성분비가 90 : 10 wt.%에서 비저항 값이 $5.2{\times}10^{-4}\;{\Omega}cm$ 정도로 전기전도성이 매우 우수한 것으로 나타났으며, 또한 X-ray 회절패턴 분석결과 성분비에 관계없이 비정질구조임을 확인 하였다. Sn이 일부 Zn으로 치환된 IZTO 박막의 경우 성분비가 90(In) : 7(Zn) : 3(Sn) wt%의 경우 비저항 값은 $6.5{\times}10^{-4}\;{\Omega}cm$ 정도로 우수한 것으로 나타났으며, X-ray 회절패턴 분석결과 비정질 구조임을 확인하였다. 광학적 특성으로는 가시광선영역(400~780nm)에서 IZO, IZTO 박막은 85% 이상의 매우 우수한 투과율을 나타내었다.