• 한국진공학회:학술대회논문집
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• 한국진공학회 2011년도 제41회 하계 정기 학술대회 초록집
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• pp.370-370
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• 2011

ZnO 나노 라드 위에 Quantum dot을 형성하고 최종적으로 TiO2를 Atomic Layer Deposition방법으로 증착하여, 그 passivation 효과가 solar cell의 효율에 미친 영향에 대한 실험을 진행하였다. 암모니아 솔루션을 이용한 Hydrothermal 방법으로 수직한 1차원 형태의 ZnO 나노라드를 TCO 기판 위에 성장시킨다. 여기에 잘 알려진 SILAR와 CBD 방법으로 CdS, CdSe 양자점을 증착한다. 그리고 amorphous TiO2로 표면을 덮는 과정을 거치는데, TiO2가 좁은 간격으로 형성된 ZnO라드 구조 위에서 균일하고 정밀하게 증착되도록 하기 위해 Atomic Layer Deposition을 이용하였다. 사용된 precursor는 Titanium isopropoxide와 H2O이며, 실험상에서 0~5 nm 두께의 TiO2 박막을 형성해 보았다. 다양한 분석 방법을 통해 TiO2/QDs/ZnO의 shell-shell-core 구조를 조사했다. (Scanning Electron Microscopy (SEM), Transmission Electron Microscopy (TEM), X-Ray Diffraction (XRD), and X-ray Photoelectron Spectroscopy (XPS)). 이를 solar cell에 적용하고 I-V curve를 통해 그 효율을 확인하였으며, Electrochemical Impedance Spectroscopy (EIS)를 통해서 재결합 측면에서 나타나는 변화 양상을 확인하였다.

• Journal of Magnetics
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• 제8권4호
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• pp.138-141
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• 2003

$Ni_{0.65}Zn_{0.35}Fe_2O_4$thin films were prepared by using a sol-gel method. Their crystallographic, dielectric and magnetic properties were investigated as a function of Cu contents by means of an X-ray diffractometer (XRD), X-ray reflectivity, LCZ meter (NF2232), a vibrating sample magnetometer (VSM), and an atomic force microscope (AFM). From typical C-V measurements for $Ni_{0.65}Zn_{0.35}Fe_2O_4$ thin films on p-type silicon substrate, the surface charge density was calculated as 1.4 ${\mu}$C/$m^2$. The dielectric constant evaluated from the capacitance at the accumulation state was 28. The high $H_{c}$ and low $M_{sat}$ at x=0.0 and 0.1 were due to the growth of the ${\alpha}$-$Fe_2O_3$ phase having antiferromagnetic properties. The rapidly decreased $H_{c}$ and increased $M_{sat}$ at x=0.2 and 0.3 can be explained that the ${\alpha}$-$Fe_2O_3$ phases have completely disappeared at x=0.3 and so, non-magnetic defects are minimized. The $M_{sat}$ was slightly decreased and the $H_{c}$ was increased above at x=0.3 because the increase of grain boundary due to smaller grain size acts as defects during magnetization process.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2011년도 제40회 동계학술대회 초록집
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• pp.450-450
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• 2011

This study reports the hydrogen sulfide gas sensing properties of ZnO nanorods bundle and the investigation of gas sensing mechanism. Also the improvement of sensing properties was also studied through the application of ZnO heterstructured nanorods. The 1-Dimensional ZnO nano-structure was synthesized by hydrothermal method and ZnO nano-heterostructures were prepared by sonochemical reaction. Scanning electron microscopy (SEM) and X-ray diffraction (XRD) spectra confirmed a well-crystalline ZnO of hexagonal structure. The gas response of ZnO nanorods bundle sensor increased with increasing temperature, which is thought to be due to chemical reaction of nanorods with gas molecules. Through analysis of X-ray photoelectron spectroscopy (XPS), the sensing mechanism of ZnO nanorods bundle sensor was explained by well-known surface reaction between ZnO surface atoms and hydrogen sulfide. However at high sensing temperature, chemical conversion of ZnO nanorods becomes a dominant sensing mechanism in current system. In order to improve the gas sensing properties, simple type of gas sensor was fabricated with ZnO nano-heterostructures, which were prepared by deposition of CuO, Au on the ZnO nanorods bundle. These heteronanostructures show higher gas response and higher current level than ZnO nanorods bundle. The gas sensing mechanism of the heteronanostructure can be explained by the chemical conversion of sensing material through the reaction with target gas.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2011년도 제41회 하계 정기 학술대회 초록집
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• pp.359-359
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• 2011

This study reports the H2S gas sensing properties of CuO / ZnO nano-hetero structure bundle and the investigation of gas sensing mechanism. The 1-Dimensional ZnO nano-structure was synthesized by hydrothermal method and CuO / ZnO nano-heterostructures were prepared by photo chemical reaction. Scanning electron microscopy (SEM) and X-ray diffraction (XRD) spectra confirmed a well-crystalline ZnO of hexagonal structure. In order to improve the H2S gas sensing properties, simple type of gas sensor was fabricated with ZnO nano-heterostructures, which were prepared by photo-chemical deposition of CuO on the ZnO nanorods bundle. The furnace type gas sensing system was used to characterize sensing properties with diluted H2S gas (50 ppm) balanced air at various operating temperature up to 500$^{\circ}C$. The H2S gas response of ZnO nanorods bundle sensor increased with increasing temperature, which is thought to be due to chemical reaction of nanorods with gas molecules. Through analysis of X-ray photoelectron spectroscopy (XPS), the sensing mechanism of ZnO nanorods bundle sensor was explained by well-known surface reaction between ZnO surface atoms and hydrogen sulfide. However at high sensing temperature, chemical conversion of ZnO nanorods becomes a dominant sensing mechanism in current system. Photo-chemically fabricated CuO/ZnO heteronanostructures show higher gas response and higher current level than ZnO nanorods bundle. The gas sensing mechanism of the heteronanostructure can be explained by the chemical conversion of sensing material through the reaction with H2S gas.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2008년도 추계학술대회 논문집 Vol.21
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• pp.256-256
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• 2008

We report epitaxial growth of ZnO thin films on (100) single-crystalline $LaAlO_3$ (LAO) substrates using pulsed laser deposition (PLD) at different substrate temperatures (400~$800^{\circ}C$). The structural and electrical properties of the films have been investigated by means of X-ray diffraction (XRD), atomic force microscope (AFM), transmission line method (TLM). The poly-crystalline of $\alpha$- and c-axis oriented ZnO film was formed at lower deposition temperature ($T_s$) of $400^{\circ}C$. At higher $T_s$, however, the films exhibit single-crystalline of $\alpha$-axis orientation represented by ZnO[$\bar{1}11$ || LAO <001>. The electrical properties of ZnO thin films depend upon their crystalline orientation, showing lower electrical resistivity values for $\alpha$-axis oriented ZnO films.

• 한국결정성장학회지
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• 제33권6호
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• pp.294-302
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• 2023

Ni-Mn-Zn ferrite, Ni_0.5-xMn_xZn_0.5Fe₂O₄(0 ≤ x ≤ 0.5)를 sol-gel 법으로 합성하여 Mn 치환량 x에 따른 결정 구조와 미세구조, 자기적 특성, 고주파 특성, 그리고 전자기파 흡수 특성을 연구하였다. Mn의 함량이 증가함에 따라 보자력 (H_C)에 큰 변화 없이 포화자화값(M_S)이 연속적으로 감소하는 것을 확인하였다. Ni-Mn-Zn ferrite-epoxy(10 wt%) 복합체에 대하여 0.1~18 GHz 주파수 범위에서 고주파 복소 유전율(ε', ε'') 및 복소 투자율(µ', µ'') spectra를 측정하고 전송선 이론을 통하여 전자기파 흡수 특성을 평가하였다. 각 시료는 1.5~2.5 GHz 및 6~11 GHz 범위에서 최소 반사손실 RL_min < -40 dB를 만족하는 1, 2차 강한 전자기파 흡수 영역이 존재하였고, Mn이 치환됨에 따라 RL_min 주파수는 저주파 방향으로 이동하였다. 또한 Ni-Zn ferrite(x = 0) 시료에 대하여 자기장(H)을 100 Oe에서 최대 400 Oe까지 단계적으로 인가한 상태로 ε', ε'', µ', µ'' spectra를 얻고 전자기파 흡수 특성을 평가하였다. 인가자장의 증가에 따라 시료의 강자성 공명 주파수가 증가하기 때문에 µ', µ'' spectra도 고주파 방향으로 단계적으로 이동해갔으며 최대 전자기파 흡수 주파수도 이에 대응하여 이동하였다. 이는 Ni-Mn-Zn ferrite에서 전자기파의 흡수는 자기적 손실에 의존하기 때문이며 Mn의 치환이나 인가자장에 의해 µ', µ'' spectra를 조절하면 전자기파 흡수 주파수도 조절할 수 있음을 보여준다. Ni-Zn ferrite-epoxy는 2.8~11.6 GHz에서 RL < -10 dB를 만족하는 광대역 전자기파 흡수 특성을 보였다.

• Journal of the Korean Physical Society
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• 제73권10호
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• pp.1546-1549
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• 2018

We have investigated core-levels of ZnO thin films at the interface with the graphene on Cu foil using in-situ X-ray Photoelectron Spectroscopy (XPS). Spectral evolution of C 1s, Zn 2p, and O 1s are observed in real time during RF sputtering deposition. We found binding energy (BE) shifts of Zn 2p and 'Zn-O' state of O 1s depending on ZnO film thickness. Core-levels BE shifts of ZnO will be discussed on the basis of electron transfer at the interface and it may have an important role in the electronic transport property of the ZnO/graphene-based electronic device.

• 한국세라믹학회지
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• 제38권6호
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• pp.593-595
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• 2001

Zinc-phosphate glasses에 B$_2$O$_3$를 도입하여 borate, phosphate, boro-phosphate networks가 혼재되어 있는 highly cross-linked structures를 형성시켜 Phosphate glasses의 화학적 안정화를 검토하였다. Raman 측정 결과 B$_2$O$_3$와 P$_2$O$_{5}$는 잘 혼화된 polynary networks를 이루고 있으며, 이렇게 하여 증진된 구조적 cross-linking에 의하여 xB$_2$O$_3$.(1-x)Zn$_2$P$_2$O$_{7}$ glasses의 T$_{g}$, T$_{d}$는 증가하였고 동시에 CTE는 감소하는 결과를 가져왔다.

• 한국자기학회:학술대회 개요집
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• 한국자기학회 2002년도 동계연구발표회 논문개요집
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• pp.92-93
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• 2002

The substituted lithium ferrites combine useful ferromagnetic properties with high Curie temperature ranging from 55$0^{\circ}C$ to 85$0^{\circ}C$, [1] high saturation magnetization, [2] and low microwave dielectric loss.[3] Saturation magnetization of (Z $n_{1-x}$ F $e_{x}$)A[L $i_{0.5x}$F $e_{ 2-0.5x}$]$_{B}$ $O_4$ increased with zinc concentration, followed by a decrease at x = 0.7.[4] This is attributed to a dilution of the A-site with zinc which initially causes an increase in saturation magnetization due to the dominance of the B-site. (omitted)d))d)d))

• 한국자기학회:학술대회 개요집
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• 한국자기학회 2011년도 임시총회 및 하계학술연구발표회
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• pp.48-49
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• 2011