• 제목/요약/키워드: $ZnIn_2S_4$

검색결과 1,095건 처리시간 0.03초

CIGS 박막태양전지용 Cd free형 ZnS(O, OH) 버퍼층 제조 및 특성평가

  • Kim, Hye-Jin;Kim, Jae-Ung;Kim, Gi-Rim;Jeong, Deok-Yeong;Jeong, Chae-Hwan
    • Proceedings of the Korean Vacuum Society Conference
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    • 한국진공학회 2015년도 제49회 하계 정기학술대회 초록집
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    • pp.257.1-257.1
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    • 2015
  • Cu(In,Ga)Se2 (CIGS) 박막 태양 전지에서 buffer layer는 CIGS 흡수층과 TCO 사이의 밴드갭 차이에 대한 문제점과 lattice mismatch를 해결하기 위해 필수적이다. 흔히 buffer layer 물질로는 CdS가 가장 많이 사용되고 있으나 Cd의 독성에 관한 문제가 야기되고 있다. 따라서 ZnS(O, OH) buffer layer가 친환경 물질로 기존의 CdS 버퍼 층의 대체 물질로 각광 받고 있으며, 단파장 범위에서 높은 투과율로 인해 wide band gap의 Chalcopyrite 태양 전지에 응용되는 buffer layer로 많은 연구가 이루어지고 있다. 또한 buffer layer를 최적화 하여 carrier lifetime과 양자 효율이 증가시킬 수 있는 특성을 가지고 있다. 이 연구에서는 Cu(In,Ga)Se2 (CIGS) 박막에 화학습식공정 (CBD) 방법을 이용하여 최적화된 ZnS(O, OH)의 증착 조건을 찾고, 고품질의 buffer layer를 제조하기 위한 실험에 초점을 맞췄다. 또한, buffer layer의 막질을 개선하고 균일한 막을 제조하기 위해 processing parameters인 시약의 농도, 제조 시간 및 온도 등의 다양한 변화를 통해 실험을 진행하였다. 그 후 최적화된 ZnS(O, OH) buffer layer의 특성 분석을 위해 X-ray diffraction(XRD), photoluminescence (PL), scanning electron microscope (SEM) and GD-OES을 이용하였고, 이를 통해 제조된 CIGS 박막 태양전지는 light induced current-voltage (LIV) and external quantum efficiency (EQE)를 통해 특성 분석을 실시 하였다. 결과적으로, 제조된 ZnS(O, OH) buffer layer의 $ZnSO4{\cdot}7H2O$의 농도는 0.16 M, Thiourea는 0.5 M, NH4OH는 7.5 M, 그리고 반응 온도는 77.5 oC의 조건 하에 CIGS 기판 위에 균일하고 균열이 없는 ZnS(O, OH) 박막을 제조하였으며 이때 제조된 태양전지의 소자 특성은 Voc = 0.478 V, Jsc = 35.79 mA/cm2, FF = 47.77%, ${\eta}=8,18 %$이다.

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Effect of sulfur addition on Cu2ZnSnSe4 thin film by Pulsed Laser Deposition (PLD를 이용한 CZTS의 박막의 S 첨가의 영향)

  • Jang, Yun-Jung;Amal, M. Ikhlasul;Alfaruqy, M. Hilmy;Kim, Kyoo Ho
    • 한국신재생에너지학회:학술대회논문집
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    • 한국신재생에너지학회 2010년도 춘계학술대회 초록집
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    • pp.86.1-86.1
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    • 2010
  • Cu2ZnSnSe4는 CIS 태양전지의 In 대체 물질계로 주목을 받고 있는 저가형 태양전지 재료로 장차 차세대 태양전지 재료로 응용이 기대되고 있다. 그러나 에너지 밴드갭이 0.9~1.1eV로 다소 낮아 태양전지 광흡수층 재료로 사용하기 위해서는 wide band gab화 처리가 필요하다. 본 연구에서는 CZTSe에 S를 첨가하여 에너지 밴드갭을 확장하고자 하며, S의 첨가가 CZTSe 박막의 특성에 미치는 영향에 대하여 조사하였다. 실험의 편의성을 도모하고자 펄스레이저 법을 사용하여 증착하였다. 박막 조성 제어에는 Cu, Zn, Sn, Se, S 분말을 볼밀로 분쇄, 혼합하여 균질 혼합상 프리커서를 제조하고 이를 Cold Isostatic Press(CIP) 성형하여 Source target을 사용하였다. Pulsed YAG-Laser를 사용하여 soda lime glass상에 증착하고 조성, 구조, 조직을 관찰하고 에너지 밴드갭, 광흡수계수, 면저항, 전하밀도 등 특성을 조사하였다.

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Mössbauer Studies on Magnetoresistance in Chalcogenide Fe0.9M0.1Cr2S4 (M=Co, Ni, Zn) (Chalcogenide Fe0.9M0.1Cr2S4(M=Co, Ni, Zn)의 자기저항에 관한 Mössbauer 분광연구)

  • Park, Jae Yun;Lee, Byoung-Seob
    • Journal of the Korean Magnetics Society
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    • 제23권2호
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    • pp.43-48
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    • 2013
  • The Jahn-Teller distortion of chalcogenide $Fe_{0.9}M_{0.1}Cr_2S_4$ (M=Co, Ni, Zn) have been investigated by M$\ddot{o}$ssbauer spectroscopy. The crystal structures of $Fe_{0.9}M_{0.1}Cr_2S_4$ (M=Co, Ni, Zn) are cubic spinel at room temperature. Magnetoresistance measurements indicate these system is conducting-semiconducting transistion around $T_C$. Below $T_C$, the asymmetric line broadening is observed and considered to be dynamic Jahn-Teller distortion. Isomer shift value of the samples at room temperature was about 0.5 mm/s, which means that charge state of Fe ions is ferrous in character. The Ni substitutions for Fe occur to increase the Jahn-Teller relaxation. CMR properties could be explained with magnetic polaron due to Jahn-Teller effect, which is different from both the double exchange interactions of manganite system and the triple exchange interactions of chalcogenide $Cu_xFe_{1-x}Cr_2S_4$.

Highly Luminescent (Zn0.6Sr0.3Mg0.1)2Ga2S5:Eu2+ Green Phosphors for a White Light-Emitting Diode

  • Jeong, Yong-Kwang;Cho, Dong-Hee;Kim, Kwang-Bok;Kang, Jun-Gill
    • Bulletin of the Korean Chemical Society
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    • 제33권8호
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    • pp.2523-2528
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    • 2012
  • Green phosphors $(Zn_{1-a-b}M_aM^{\prime}_b)_xGa_yS_{x+3y/2}:Eu^{2+}$ (M, M' = alkali earth ions) with x = 2 and y = 2-5 were prepared, starting from ZnO, MgO, $SrCO_3$, $Ga_2O_3$, $Eu_2O_3$, and S with a flux $NH_4F$ using a conventional solidstate reaction. A phosphor with the composition of $(Zn_{0.6}Sr_{0.3}Mg_{0.1})_2Ga_2S_5:Eu^{2+}$ produced the strongest luminescence at a 460-nm excitation. The observed XRD patterns indicated that the optimized phosphor consisted of two components: zinc thiogallate and zinc sulfide. The characteristic green luminescence of the $ZnS:Eu^{2+}$ component on excitation at 460 nm was attributed to the donor-acceptor ($D_{ZnGa_2S_4}-A_{ZnS}$) recombination in the hybrid boundary. The optimized green phosphor converted 17.9% of the absorbed blue light into luminescence. For the fabrication of light-emitting diode (LED), the optimized phosphor was coated with MgO using magnesium nitrate to overcome their weakness against moisture. The MgO-coated green phosphor was fabricated with a blue GaN LED, and the chromaticity index of the phosphor-cast LED (pc-LED) was investigated as a function of the wt % of the optimized phosphor. White LEDs were fabricated by pasting the optimized green (G) and the red (R) phosphors, and the commercial yellow (Y) phosphor on the blue chips. The three-band pc-WLED resulted in improved color rendering index (CRI) and corrected color temperature (CCT), compared with those of the two-band pc-WLED.

A study on the Microstructure and electrical characteristics of ZnO varistors for arrester (피뢰기용 ZnO 바리스터 소자의 미세구조 및 전기적 특성에 관한 연구)

  • 김석수;조한구;박태곤;박춘현
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 한국전기전자재료학회 2001년도 하계학술대회 논문집
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    • pp.489-494
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    • 2001
  • In this thesis, the microstructure and electrical properties of ZnO varistors were investigated according to ZnO varistors with various formulation. A∼E's ZnO varistor ceramics were exhibited good density, 95% of theory density and low porosity, 5%, wholly. The average grain size of A-E's ZnO varistor ceramics exhibited 11.89$\mu\textrm{m}$, 13.57$\mu\textrm{m}$, 15.44$\mu\textrm{m}$, 11.92$\mu\textrm{m}$, 12.47$\mu\textrm{m}$, respectively. Grain size of C's ZnO varistor is larger and grain size of A and D's are smaller than other varistors. In the microstructure, A∼E's ZnO varistor ceramics sintered at l130$^{\circ}C$ was consisted of ZnO grain(ZnO), spinel phase(Zn$\sub$2.33/Sb$\sub$0.67/O$_4$), Bi-rich Phase(Bi$_2$O$_3$) and inergranular phase, wholly. Reference voltage of A∼E's ZnO varistor sintered at 1130$^{\circ}C$ decreased in order D, E > A > B > C's ZnO varistors. Nonlinear exponent of varistors exhibited high characteristics, above 30, wholly. Consequently, C's ZnO varistor exhibited good nonlinear exponent, 68. Lightning impulse residual voltage of A, B, C and E's ZnO varistors suited standard characteristics, below 12kV at current of 5kA.

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Application of Mechanical Alloying Method on the Fabrication of Zinc Sulfide Photo-luminescence Powders (ZnS 형광체 분말제조를 위한 기계적합금화법의 응용 연구)

  • Ahn In-Shup;Chong Woo-Hyun;Bae Sung-Yeal;Sung Tek-Kyoung;Park Dong-Kyu
    • Journal of Powder Materials
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    • 제12권4호
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    • pp.279-283
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    • 2005
  • In this study, the ZnS composite powders for host material in phosphor was synthesized in situ by mechanical alloying. As the mechanical alloying time increases, particle size of ZnS decreases. ZnS powders of $1.85\;\mu{m}$ in a mean size was fabricated by mechanical alloying for 10h. The crystal structures of ZnS powders were investigated by X-ray diffraction and the photo-luminescence properties was evaluated with the optical spectra analyzer. The steady state condition of mechanically alloyed ZnS was obtained as a mean particle size of $2\;\mu{m}$ in 5h milling. The sphalerite and wurtize structures coexist in the ZnS mechanically alloyed for 5h. The ZnS powder mechanically alloyed for 10h grows to the sphalerite structure. And the strong emission peaks of ZnS are observed at 480 nm wave length at the powders of mechanically alloyed for 10h, but the sphalerite and wurtize structures in ZnS coexist and emission peaks are not appeared at the powders of mechanically alloyed for 10h.

Characteristics and Preparation of Gas Sensor Using Nano Indium Coated ZnO:In (나노 Indium을 부착한 ZnO:In 가스센서의 제작 및 특성)

  • Jung, Jong-Hun;Yu, Yun-Sik;Yu, Il
    • Korean Journal of Materials Research
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    • 제21권9호
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    • pp.486-490
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    • 2011
  • Nano-indium-coated ZnO:In thick films were prepared by a hydrothermal method. ZnO:In gas sensors were fabricated by a screen printing method on alumina substrates. The gas sensing properties of the gas sensors were investigated for hydrocarbon gas. The effects of the indium concentration of the ZnO:In gas sensors on the structural and morphological properties were investigated by X-ray diffraction and scanning electron microscopy. XRD patterns revealed that the ZnO:In with wurtzite structure was grown with (1 0 0), (0 0 2), and (1 0 1) peaks. The quantity of In coating on the ZnO surface increased with increasing In concentration. The sensitivity of the ZnO:In sensors was measured for 5 ppm $CH_4$ gas and $CH_3CH_2CH_3$ gas at room temperature by comparing the resistance in air with that in target gases. The highest sensitivity to $CH_4$ gas and $CH_3CH_2CH_3$ gas of the ZnO:In sensors was observed at the In 6 wt%. The response and recovery times of the 6 wt% indiumcoated ZnO:In gas sensors were 19 s and 12 s, respectively.

Synthesis and physicochemical characterization of NixZnx-Fe2O4/MWCNT nanostructures as enzyme mimetics with peroxidase-like catalytic activity

  • Salarizadeh, Navvabeh;Sadri, Minoo;Hosseini, Hassan;Sajedi, Reza. H.
    • Carbon letters
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    • 제24권
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    • pp.103-110
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    • 2017
  • Carbon-based magnetic nanostructures in several instances have resulted in improved physicochemical and catalytic properties when compared to multi-wall carbon nanotubes (MWCNTs) and magnetic nanoparticles. In this study, magnetic MWCNTs with a structure of $Ni_xZn_xFe_2O_4/MWCNT$ as peroxidase mimics were fabricated by the one-pot hydrothermal method. The structure, composition and morphology of the nanocomposites were characterized with X-ray diffraction (XRD), Fourier transform infrared spectroscopy and transmission electron microscopy. The magnetic properties were investigated with a vibrating sample magnetometer. The peroxidase-like catalytic activity of the nanocomposites was investigated by colorimetric and electrochemical tests with 3,3',5,5'-tetramethylbenzidine (TMB) and $H_2O_2$ as the substrates. The results show that the synthesis of the nanocomposites was successfully performed. XRD analysis confirmed the crystalline structures of the $Ni_xZn_xFe_2O_4/MWCNT$ nanohybrids and MWCNTs. The main peaks of the $Ni_xZn_xFe_2O_4/MWCNT$s crystals were presented. The $Ni_{0.25}Zn_{0.25}Fe_2O_4/MWCNT$ and $Ni_{0.5}Zn_{0.5}Fe_2O_4/MWCNT$ nanocatalysts showed nearly similar physicochemical properties, but the $Ni_{0.5}Zn_{0.5}Fe_2O_4/MWCNT$ nanocatalyst was more appropriate than the $Ni_{0.25}Zn_{0.25}Fe_2O_4/MWCNT$ nanocatalyst in terms of the magnetic properties and catalytic activity. The optimum peroxidase-like activity of the nanocatalysts was obtained at pH 3.0. The $Ni_{0.5}Zn_{0.5}Fe_2O_4/MWCNT$ nanocatalyst exhibited a good peroxidase-like activity. These magnetic nanocatalysts can be suitable candidates for future enzyme-based applications such as the detection of glucose and $H_2O_2$.

Fabrication of Cu2ZnSnS4 Films by Rapid Thermal Annealing of Cu/ZnSn/Cu Precursor Layer and Their Application to Solar Cells

  • Chalapathy, R.B.V.;Jung, Gwang Sun;Ko, Young Min;Ahn, Byung Tae;Kwon, HyukSang
    • Current Photovoltaic Research
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    • 제1권2호
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    • pp.82-89
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    • 2013
  • $Cu_2ZnSnS_4$ thin film have been fabricated by rapid thermal annealing of dc-sputtered metal precursor with Cu/ZnSn/Cu stack in sulfur ambient. A CZTS film with a good uniformity was formed at $560^{\circ}C$ in 6 min. $Cu_2SnS_3$ and $Cu_3SnS_4$ secondary phases were present at $540^{\circ}C$ and a trace amount of $Cu_2SnS_3$ secondary phase was present at $560^{\circ}C$. Single-phase large-grained CZTS film with rough surface was formed at $560^{\circ}C$. Solar cell with best efficiency of 4.7% ($V_{oc}=632mV$, $j_{sc}=15.8mA/cm^2$, FF = 47.13%) for an area of $0.44cm^2$ was obtained for the CZTS absorber grown at $560^{\circ}C$ for 6 min. The existence of second phase at lower-temperature annealing and rough surface at higher-temperature annealing caused the degradation of cell performance. Also poor back contact by void formation deteriorated cell performance. The fill factor was below 0.5; it should be increased by minimizing voids at the CZTS/Mo interface. Our results suggest that CZTS absorbers can be grown by rapid thermal annealing of metallic precursors in sulfur ambient for short process times ranging in minutes.

Study on UV Opto-Electric Properties of ZnS:Mn/ZnS Core-Shell QD

  • Lee, Yun-Ji;Cha, Ji-Min;Yoon, Chang-Bun;Lee, Seong-Eui
    • Journal of the Korean Ceramic Society
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    • 제55권1호
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    • pp.55-60
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    • 2018
  • In this study, quantum dots composed of $Mn^{2+}$ doped ZnS core and ZnS shell were synthesized using MPA precursor at room temperature. The ZnS: Mn/ZnS quantum dots were prepared by varying the content of MPA in the synthesis of ZnS shells. XRD, Photo-Luminescence (PL), XPS and TEM were used to characterize the properties of the ZnS: Mn/ZnS quantum dots. As a result of PL measurement using UV excitation light at 365 nm, the PL intensity was found to greatly increase when MPA was added at 15 ml, compared to the case with no MPA; the PL peaks shifted from 603 nm to 598 nm. A UV sensor was fabricated by using a sputtering process to form a Pt pattern and placing a QD on the Pt pattern. To verify the characteristics of the sensor, we measured the electrical properties via irradiation with UV, Red, Green, and Blue light. As a result, there were no reactions for the R, G, and B light, but an energy of 3.39 eV was produced with UV light irradiation. For the sensor using ZnS: Mn/ZnS quantum dots, the maximum current (A) value decreased from $4.00{\times}10^{-11}$ A to $2.62{\times}10^{-12}$ A with increasing of the MPA content. As the MPA content increases, the PL intensity improves but the electrical current value dropped because of the electron confinement effect of the core-shell.