• Journal of the Korean Vacuum Society
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• v.16 no.5
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• pp.359-365
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• 2007

In this paper we present a bottom-gate type of zinc oxide (ZnO) and Gallium (Ga) doped zinc oxide (GZO) based thin film transistors (TFTs) through applying a radio frequency (RF) magnetron sputtering method at room temperature. The gate leakage current can be reduced up to several ph by applying $SiO_2$ thermally grown instead of using new gate oxide materials. The root mean square (RMS) values of the ZnO and GZO film surface were measured as 1.07 nm and 1.65 nm, respectively. Also, the transmittances of the ZnO and GZO film were more than 80% and 75%, respectively, and they were changed as their film thickness. The ZnO and GZO film had a wurtzite structure that was arranged well as a (002) orientation. The ZnO TFT had a threshold voltage of 2.5 V, a field effect mobility of $0.027\;cm^2/(V{\cdot}s)$, a on/off ratio of $10^4$, a gate voltage swing of 17 V/decade and it operated in a enhancement mode. In case of the GZO TFT, it operated in a depletion mode with a threshold voltage of -3.4 V, a field effect mobility of $0.023\;cm^2/(V{\cdot}s)$, a on/off ratio of $2{\times}10^4$ and a gate voltage swing of 3.3 V/decade. We successfully demonstrated that the TFTs with the enhancement and depletion mode type can be fabricated by using pure ZnO and 1wt% Ga-doped ZnO.

• The Transactions of the Korean Institute of Electrical Engineers
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• v.43 no.6
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• pp.965-970
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• 1994

ZnO transparent conducting oxide thin films have been prepared by Pyrosol deposition method and the effects of the different experimental variables on the electrical resistivity and optical transmittance of the prepared films have been investigated in details. The best film with a resistivity of about 8 X 10S0-2TΩcm and transmittance about 80% has been obtained at the substrate temperature of 4$25^{\circ}C$ by using HS12T+CHS13TOH(1:3) solvent and NS12T carrier gas after annealing at 20$0^{\circ}C$ for 40 minutes in vacuum. Furthermore, We have also found the effect of substrate temperature on crystallographic orientation and surface morphology. Annealing of the as-deposited film in vacuum leads to a substantial reduction in resistivity without affecting the optical transmittance and crystallographic orientation.

• Journal of The Korean Society of Grassland and Forage Science
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• v.24 no.4
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• pp.271-280
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• 2004

This pot experiment was conducted to investigate the effects of systematic variation appling of Fe, Mn, Cu, and Zn on forage performance of orchardgrass and white clover. The treatments of systematic variation were 0/100, 25/75, 50/50, 75/25, and $100/0\%$ in the Fe/Cu(trial-1), Mn/Zn(trial-2), and Fe+Cu/Mn+Zn(trial-3), respectively. The treatments of Fe/Mn/Cu/Zn(trial-4) were $70\%$ in main-element and $10\% in other 3 sub-elements, respectively. 1. Compared with orchadgrass, white clover showed relatively consistent differences in the content of micronutrients as influenced by treatments of the systematic variation. The contents of Mn and Cu in the forages were significantly influenced by the application rates of Mn and Cu, respectively. The contents of Fe and Zn in the forages, however, were not significantly different among these treatments. 2. Compared with orchardgrass in the Fe/cu trial, white clover had not only the low content of Cu but also the Cu content and yield of white clover were greatly decreased by the low rate of application of Cu. In the Mn/Zn trial, the $0/100\%$ resulted in the severe decrease of Mn-content in both forages. The low content of Mn in white clover tended to be negatively correlated to the Mn-chlorosis, inferior growth and flowering, and low yield. 3. In the Fe+Cu/Mn+Zn trial, the application with $0/100\%$ and $0/100\%$ resulted in the relatively great decrease of Cu and Mn contents, respectively. These traits in white clover tended to be negatively correlated to the inferior growth and flowering, and low yield 4. In the Fe/Mn/Cu/Zn trial, the content of every main-elements in the forages were increased especially in Mn. In addition, the contents of sub-elements were likely to be somewhat negatively influenced by the treatment of main-element respectively.

• Journal of the Microelectronics and Packaging Society
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• v.22 no.3
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• pp.45-50
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• 2015

The goal of this research is the create novel magnets with no rare-earth contents, with larger energy product by comparison with currently used ferrites. For this purpose we developed nano-sized hard-type/soft-type composite ferrite in which high remanent magnetization (Mr) and high coercivity (Hc). Nano-sized Ba-ferrite, Ni-Zn ferrite and $BaFe_{12}O_{19}/Ni_{0.5}Zn_{0.5}Fe_2O_4$ composite ferrites were prepared by sol-gel combustion method by use of glicine-nitrate and citric acid. Nanocomposite ferrites were calcined at temperature range $700-900^{\circ}C$ for 1h. According to the X-ray diffraction patterns and FT-IR spectra, single phase of NiZn-ferrite and Ba-ferrite were detected and hard/soft nanocomposite ferrite was indicated to the coexistence of the magnetoplumbite-structural $BaFe_{12}O_{19}$ and spinel-structural $Ni_{0.5}Zn_{0.5}Fe_2O_4$ that agreed with the standard JCPDS 10-0325 data. The particle size of nanocomposite turn out to be less than 120 nm. The nanocomposite ferrite shows a single-phase magnetization behavior, implying that the hard magnetic phase and soft magnetic phase were well exchange-coupled. The specific saturation magnetization ($M_s$) of the nanocomposite ferrite is located between hard ($BaFe_{12}O_{19}$) and soft ferrite($Ni_{0.5}Zn_{0.5}Fe_2O_4$). The remanence (Mr) of nanocomposite ferrite is much higher than that of the individual $BaFe_{12}O_{19}$ and $Ni_{0.5}Zn_{0.5}Fe_2O_4$ ferrite, and $(BH)_{max}$ is increased slightly.

• Journal of the Korean Institute of Illuminating and Electrical Installation Engineers
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• v.26 no.4
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• pp.41-47
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• 2012

This paper deals with the electrical characteristics related to power loss, equivalent resistance, and leakage currents flowing through new and deteriorated zinc oxide(ZnO) arrester elements subjected to the mixed DC and 60[Hz] AC voltages. The test specimens were deteriorated by 8/20[${\mu}s$] impulse current of 2.5[kA]. The leakage current-applied voltage($I-V$) characteristic curves of ZnO surge arrester elements were measured as a parameter of the ratio of the peak of 60[Hz] AC voltage to the peak of total voltage. As a consequence of test results, in case of the same applied voltage, the leakage currents flowing through the deteriorated ZnO arrester elements were higher than those flowing through the new ZnO surge arrester elements. The cross-over phenomenon in $I-V$ curves of ZnO surge arrester elements measured as a parameter of the mixed ratio of DC and AC voltages was observed at the low current domain. The effect of DC voltage on the leakage current flowing through ZnO surge arrester elements is pronounced at the same magnitude of test voltages. In addition, the larger the applied number of 8/20[${\mu}s$] impulse current of 2.5[kA] is, the greater the power loss is, in particular, the more severe the power loss increases at higher applied voltages.

• Journal of Korean Society of Environmental Engineers
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• v.22 no.7
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• pp.1319-1330
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• 2000

Activated carbons prepared by chemical activation of organic waste sludges with $ZnCl_2$ and $K_2S$ have been studied in terms of their pore development and adsorptivity. Pore development of the carbons prepared from organic waste sludges was characterized by the nitrogen adsorption at 77K. The $ZnCl_2$-activated carbon produced by chemical activation with zinc chloride exhibited type I isotherm characteristics according to the BDDT classification, suggesting the presence of micropores formed by activation process. The isotherms of the commercial powdered activated carbon and $K_2S$-activated carbon reveal a hysteresis similar to that of type IV in BDDT classification, indicating the formation of mesopores. This result implies that the major pores of $K_2S$-activated carbon are composed of meso and micropores, and a macropores are minor. The adsorptive capacities of metal on the $K_2S$-activated carbon prepared from organic waste sludges were found to be superior to those on a commercial granular activated carbon. The Langmuir and Freundlich isotherms yield a fairly good fit to the adsorption data, indicating a monolayer adsorption of metals onto $K_2S$-activated carbon. The adsorptive capacity of the $K_2S$-activated carbon was superior to $ZnCl_2$-activated carbon for $PO_4$-P, and vice versa for $NO_3$-N. From the results of the studies reported here, it can be concluded that activated carbons with adsorptivity superior to commercial granular activated carbons can be produced from organic waste sludge using a two-step carbonization/activation procedure with zinc chloride or potassium sulfide as the activating agents.

• Korean Journal of Materials Research
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• v.23 no.1
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• pp.7-12
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• 2013

The $Cu_2ZnSnS_4$ (CZTS) thin film solar cell is a candidate next generation thin film solar cell. For the application of an absorption layer in solar cells, CZTS thin films were deposited by pulsed laser deposition (PLD) at substrate temperature of $300^{\circ}C$ without post annealing process. Deposition time was carefully adjusted as the main experimental variable. Regardless of deposition time, single phase CZTS thin films are obtained with no existence of secondary phases. Irregularly-shaped grains are densely formed on the surface of CZTS thin films. With increasing deposition time, the grain size increases and the thickness of the CZTS thin films increases from 0.16 to $1{\mu}m$. The variation of the surface morphology and thickness of the CZTS thin films depends on the deposition time. The stoichiometry of all CZTS thin films shows a Cu-rich and S-poor state. Sn content gradually increases as deposition time increases. Secondary ion mass spectrometry was carried out to evaluate the elemental depth distribution in CZTS thin films. The optimal deposition time to grow CZTS thin films is 150 min. In this study, we show the effect of deposition time on the structural properties of CZTS thin film deposited on soda lime glass (SLG) substrate using PLD. We present a comprehensive evaluation of CZTS thin films.

• 한국정보디스플레이학회:학술대회논문집
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• 2008.10a
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• pp.993-994
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• 2008

Electrochromic (EC) devices are capable of reversibly changing their optical properties upon charge injection and extraction induced by the external voltage. The characteristics of the EC device, such as low power consumption, high coloration efficiency, and memory effects under open circuit status, make them suitable for use in a variety of applications including smart windows and electronic papers. Coloration due to reduction or oxidation of redox chromophores can be used for EC devices (e-paper), but the switching time is slow (second level). Recently, with increasing demand for the low cost, lightweight flat panel display with paper-like readability (electronic paper), an EC display technology based on dye-modified $TiO_2$ nanoparticle electrode was developed. A well known organic dye molecule, viologen, was adsorbed on the surface of a mesoporous $TiO_2$ nanoparticle film to form the EC electrode. On the other hand, ZnO is a wide bandgap II-VI semiconductor which has been applied in many fields such as UV lasers, field effect transistors and transparent conductors. The bandgap of the bulk ZnO is about 3.37 eV, which is close to that of the $TiO_2$ (3.4 eV). As a traditional transparent conductor, ZnO has excellent electron transport properties, even in ZnO nanoparticle films. In the past few years, one-dimension (1D) nanostructures of ZnO have attracted extensive research interest. In particular, 1D ZnO nanowires renders much better electron transportation capability by providing a direct conduction path for electron transport and greatly reducing the number of grain boundaries. These unique advantages make ZnO nanowires a promising matrix electrode for EC dye molecule loading. ZnO nanowires grow vertically from the substrate and form a dense array (Fig. 1). The ZnO nanowires show regular hexagonal cross section and the average diameter of the ZnO nanowires is about 100 nm. The cross-section image of the ZnO nanowires array (Fig. 1) indicates that the length of the ZnO nanowires is about $6\;{\mu}m$. From one on/off cycle of the ZnO EC cell (Fig. 2). We can see that, the switching time of a ZnO nanowire electrode EC cell with an active area of $1\;{\times}\;1\;cm^2$ is 170 ms and 142 ms for coloration and bleaching, respectively. The coloration and bleaching time is faster compared to the $TiO_2$ mesoporous EC devices with both coloration and bleaching time of about 250 ms for a device with an active area of $2.5\;cm^2$. With further optimization, it is possible that the response time can reach ten(s) of millisecond, i.e. capable of displaying video. Fig. 3 shows a prototype with two different transmittance states. It can be seen that good contrast was obtained. The retention was at least a few hours for these prototypes. Being an oxide, ZnO is oxidation resistant, i.e. it is more durable for field emission cathode. ZnO nanotetropods were also applied to realize the first prototype triode field emission device, making use of scattered surface-conduction electrons for field emission (Fig. 4). The device has a high efficiency (field emitted electron to total electron ratio) of about 60%. With this high efficiency, we were able to fabricate some prototype displays (Fig. 5 showing some alphanumerical symbols). ZnO tetrapods have four legs, which guarantees that there is one leg always pointing upward, even using screen printing method to fabricate the cathode.

• Analytical Science and Technology
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• v.11 no.2
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• pp.79-87
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• 1998

Consumers have recently preferred to purchase extensive UV intercepting products, which are waterproof and free from side effects on skin. During the testing of cytotoxicity (in-vitro) in neutral red (NR) method, cell survival ratio of UV-B interceptors decreased to just above 0.08 w/v%, and it was observed that the UV-A interceptors the ratio also decreased to just above 0.06 w/v%. In addition patch-tests of inorganic UV interceptors resulted in no skin irritation even below 10.0 and 11.25. In absorption curves, UV-B was most suitable for octyl methoxycinnamate (OMC) and UV-A for butyl methoxy dibenzoylmethane (BMDM). For this reason, $Nylonpoly^{TM}$ UVA/UVB the material of OMC and BMDM coated with Nylon & polyethylene, was used as the organic UV interceptor. Zinc oxide (ZnO) and titanium dioxide ($TiO_2$) was used as inorganic UV interceptors. The appropriate mixture ratio of ZnO and $TiO_2$ was 6 to 4:6% of ZnO, 4% of $TiO_2$ and 5% of $Nylonpoly^{TM}$ UVA/UVB were all combined and added to our sunscreen cream. The SPF value of in-vitro was 38.9. In practical application, each sun protection factor (SPF) duration of oil-in-water (O/W) emulsion and water-in-silicone (W/S) emulsion containing sunscreen cream of the same content showed that W/S type of sunscreen cream was 5 times as durable as the other. Therefore, this product is fit for use in swimming, climbing or skiing. This research is to minimize skin trouble caused by UV interceptors and to make one with proper softness, skin safety and UV intercepting efficiency.

• Journal of Korean Ophthalmic Optics Society
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• v.4 no.2
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• pp.97-103
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• 1999

Zinc sulfide is a ll-VI compound with a large direct band gap in the near-UV region and a promising material for blur-light emitting diode and laser diode. It was identified that the structure had zinc blonde structure through the analysis of X-ray diffraction patterns. It's lattice constant was measured to be $a_o=5.411{\AA}$. The optical absorption, photocurrent, and photoluminescence spectra were measured to investigate the optical properties of zinc sulfide single crystal. The optical energy band gap measured at room temperature was 3.61eV The energy band gap of zinc sulfide annealed in zinc vapor at $800^{\circ}C$ was lower 0.1eV than that of as-grown zinc sulfide through the analysis of the photocurrent spectra. The photoluminescence spectra were measured ranging from 30K to 293K for the two cases of as-grown and annealed zinc sulfide. As-grown ZnS single crystal had peaks at 350nm, 392nm, 465nm, and annealed zinc sulfide had peaks at 349nm.