• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.11 no.3
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• pp.242-247
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• 1998

In this study, we have synthesized $ZnGa_2O_4$:Mn,X powder doped with Mn, MnO, $MnF_2$ and $MnCl_2$, low voltage green emitting phosphor, in vacuum atmosphere. From PL spectra, the intensity of the emission peak, the brightness with coactivator show that $ZnGa_2O_4$:Mn,Cl > $ZnGa_2O_4$:Mn,F > $ZnGa_2O_4$:Mn,O > $ZnGa_2O_4$:Mn. These improvement of the brightness are caused by the increase of the concentration of $Mn^{2+}$ ion. In case of $ZnGa_2O_4$:Mn,Cl and ZnGa$_2$O$_4$:Mn,F, the brightness is enhanced much more, which is owed to the decrease of defect of host material. For $ZnGa_2O_4$:Mn,Cl phosphor fabricated with optimized condition, the decay time becomes short from 30 ms of the $ZnGa_2O_4$:Mn and $ZnGa_2O_4$:Mn,O to 6 ms and the brightness of CL at 1 kV, 1 mA is 60 cd/$m^2$.

• Journal of the Korean Ceramic Society
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• v.33 no.5
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• pp.531-535
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• 1996

ZnGa2O4 and Mn-doped ZnGa2O4 were synthesized using the state reaction method to investigate their photoluminescence characteristics depending on Mn concentration. Under 254nm excitation, ZnGa2O4 exhibited a broad-band emission extending from 330 nm to 610 nm peaking at 450nm. On the other hand Mn-doped ZnGa2O4 showed a new strong narrow-band emission peaking at 504 nm and maximum intensity at the doping concentration of 0.006 mole Mn.

• Transactions on Electrical and Electronic Materials
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• v.4 no.6
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• pp.13-16
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• 2003

Mn-doped $ZnGa_{2}O_{4}$:$Mn^{2+}$ (M=S, Se) thin film phosphors have been grown using a pulsed laser deposition technique under various growth conditions. The structural characterization carr~ed out on a series of $ZnGa_{2}O_{4}$:$Mn^{2+}$ (M=S, Se) films grown on MgO(l00) substrates usmg Zn-rich ceramic targets. Oxygen pressure was varied from 50 to 200 mTorr and Zn/Ga ratio was the function of oxygen pressure. XRD patterns showed that the lattice constants of the $ZnGa_{2}O_{4}$:$Mn^{2+}$ (M=S, Se) thin film decrease with the substitution of sulfur and selenium for the oxygen in the $ZnGa_2O_4$. Measurements of photoluminescence (PL) properties of $ZnGa_{2}O_{4}$:$Mn^{2+}$ (M=S, Se) thin films have indicated that MgO(100) is one of the most promised substrates for the growth of high quality $ZnGa_2O_{4-x}M_{x}$:$Mn^{2+}$ (M=S, Se) thin films. In particular, the incorporation of Sulfur or Selenium into $ZnGa_2O_4$ lattice could induce a remarkable increase in the intensity of PL. The increasing of green emission intensity was observed with $ZnGa_2O_{3.925}Se_{0.075}:$Mn^{2+}$ and $ZnGa_2O_{3.925}S_{0.05}$:$Mn^{2+}$ films, whose brightness was increased by a factor of 3.1 and 1.4 in comparison with that of $ZnGa_{2}O_{4}$:$Mn^{2+}$ films, respectively. These phosphors may promise for application to the flat panel displays.

• Journal of the Korean Institute of Illuminating and Electrical Installation Engineers
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• v.24 no.4
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• pp.10-16
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• 2010

In this paper, synthesis here Mn add to Ar injection the state and a vacuum an atomosphere $ZnGa_2O_4$ : Mn, ZnO and $Ga_2O_3$ power of 1 : 1 mole ratio mixture. Manufacture a close examination of oxygen a component variation luminescence a specific character reach an in fluence of $ZnGa_2O_4$ : Mn, luminescence spectrum observation also an explanation of Mn site symmetry and at luminescence spectrum reach an influence from low temperature photoluminescence spectrum.

• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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• 2009.05a
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• pp.703-708
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• 2009

In this paper, synthesis here Mn add to Ar any a vacuum an atomosphere $ZnGa_2O_4$ : Mn, ZnO and $Ga_2O_3$ power of 1:1 mole ratio mixture. Manufacture a close examination of oxygen a component variation luminescence a specific character reach an in fluence of $ZnGa_2O_4$ : Mn, luminescence spectrum, the surface a picture and a component ratio measurement, also an explanation of Mn site symmetry and at luminescence spectrum reach an influence from low temperature photoluminescence spectrum.

• Journal of the Korean Ceramic Society
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• v.35 no.2
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• pp.145-150
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• 1998

ZnGa2O4 thin film phosphors were deposited on Si(100) (111) wafers by rf magnetron sputtering. The ef-fects of substrates and deposition parameters on the growing mechanisms were studied. As a results of the effect of substrate temperature tranistions of growth orientation and different growing behaviors were ob-served. Also polycrystalline ZnGa2O4 thin film could not be achieved without oxygen gas. PL spectrum of ZnGa2O4 thin films were analyzed and showed broad band luminescence spectrum.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.17 no.12
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• pp.1347-1351
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• 2004

The ZnGa$_2$O$_4$ phosphor target was synthesized through solid-state reactions as calcine and sintering temperature in order to deposit ZnGa$_2$O$_4$ Phosphor thin film by rf magnetron sputtering system. The x-ray diffraction patterns of ZnGa$_2$O$_4$ phosphor target showed the position of (311) main peak. The cathodoluminescence(CL) spectrums of ZnGa$_2$O$_4$ phosphor target showed main peak of 370 nm to 400 nm, and maximum intensity at the calcine temperature of $700^{\circ}C$ and sintering temperature of 130$0^{\circ}C$. It was possible to prepare The ZnGa$_2$O$_4$ phosphor thin film with synthesized ZnGa$_2$O$_4$ phosphor target and The prepared ZnGa$_2$O$_4$ phosphor thin film showed the position of (311) main peak.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.19 no.5
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• pp.432-436
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• 2006

The $ZnGa_2O_4$ and Mn, Cr-doped $ZnGa_2O_4$ Phosphors were synthesized through conventional solid state reactions. The XRD patterns show that the $ZnGa_2O_4$ has a (3 1 1) main peak and a spinel phase. The emission wavelength of $ZnGa_2O_4$ showed main peak of 420 nm and maximum intensity at the sintering temperature of $1100^{\circ}C$. In the crystalline $ZnGa_2O_4$, the Mn shows green emission (510 nm, $^4T_1-^6A_1$) with a quenching concentration of 0.6 mol%, and the Cr shows red emission (705 nm, $^4T_2-^4A_2$) with a quenching concentration of 2 mol%. These results indicate that $ZnGa_2O_4$ Phosphors hold promise for potential applications in field emission display devices with high brightness operating in full color regions.

• Electrical & Electronic Materials
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• v.10 no.1
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• pp.33-38
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• 1997

The green emitting phosphors of the Field Emission Display(FED), Al codoped ZnGa$_{2}$O$_{4}$:Mn, were synthesized and sintered at high temperature. From X-ray diffraction measurements, it was confirmed that poly crystalline ZnGa$_{2}$O$_{4}$ and ZnAI$_{2}$O$_{4}$ solid solution coexist in Al codoped ZnGa$_{2}$O$_{4}$:Mn. Photoluminescence spectra of Al codoped ZnGa$_{2}$O$_{4}$:Mn show that the main peak position is shifted from 504 nm to 513 nm with the increase of Al concentration. The brightness was improved with the amount of Al dopant. It showed the maximum value at the doping level of 0.03 mole and then, it degraded rapidly. These results are due to the superposition of emission from . ZnGa$_{2}$O$_{4}$:Mn and ZnAI$_{2}$O$_{4}$:Mn.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2004.07b
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• pp.1092-1095
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• 2004

The $ZnGa_2O_4$ phosphor target is synthesized through solid-state reactions as calcine and sintering temperature in order to deposit $ZnGa_2O_4$ phosphor thin film by rf magnetron sputtering system. The $ZnGa_2O_4$ phosphor thin film is deposited on $Pt/Ti/SiO_2/Si$ substrate and prepared $ZnGa_2O_4$ Phosphor thin film is annealed by rapid thermal processor(RTP) at $750^{\circ}C$, 10 sec. The x-ray diffraction patterns of $ZnGa_2O_4$ phosphor target and thin film show the position of (311) main peak. The cathodolumincsccnce(CL) succtrums of $ZnGa_2O_4$ phosphor target show main peak of 360nm and broad bandwidth of about 180nm.