• Title/Summary/Keyword: $ZnCo_2O_4$

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Electrical Properties and Stability of ZPCE Based Varistors (ZPCE계 바리스터의 전기적 성질 및 안정성)

  • Nahm, Choon-Woo;Yoon, Han-Soo;Ryu, Jung-Sun
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2000.05b
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    • pp.190-195
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    • 2000
  • The electrical properties and stability of ZPCE varistors consisted of $ZnO-Pr_6O_{11}-CoO-Er_2O_3$ ceramics were investigated. $ZnO-Pr_6O_{11}-CoO-Er_2O_3$ based ceramics were sintered at $1300^{\circ}C$ and $1350^{\circ}C$, respectively, without and with 0.5 mol% $Er_2O_3$. The varistors sintered at $1300^{\circ}C$ exhibited a better nonlinearity than that $1350^{\circ}C$. The varistors with $Er_2O_3$ of 0.5 mol% exhibited a high nonlinear exponent of 52.8. However, they easily degraded due to the low density below 85% of TD. On the other hand, the varistors sintered at $1350^{\circ}C$ without $Er_2O_3$ exhibited an extremely poor nonlinearity, but the varistors with $Er_2O_3$ of 0.5 mol% exhibited a relatively good nonlinearity, which the nonlinear exponent is 34.8 and the leakage current is $7.4\;{\mu}A$ Morever, they exhibited a very high stability, which the variation rate of varistor voltage, nonlinear exponent, and leakage current are -0.9%, -2.9%, and +2.7%, respectively, under the third stress $(0.80 V_{1mA}/90^{\circ}C/12h)$ + $(0.85 V_{1mA}/115^{\circ}C/12h)$ + $(0.90 V_{1mA}/120^{\circ}C/12h)$. Consequently, it was estimated that $ZnO-Pr_6O_{11}-CoO-Er_2O_3$ ceramics will be usefully applied to develop the advanced $Pr_6O_{11}$-based ZnO varistors.

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Synthesis of Mn-doped Zn2SiO4 phosphor particles by solid-state method at relatively low temperature and their photoluminescence characteristics (상대적으로 낮은 온도에서의 고상법에 의한 망간이 도핑된 Zn2SiO4 형광체 입자의 제조 및 형광특성)

  • Lee, Jin-Hwa;Choi, Seung-Ok;Lee, Dong-Kyu
    • Journal of the Korea Academia-Industrial cooperation Society
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    • v.11 no.1
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    • pp.228-233
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    • 2010
  • Mn-doped $Zn_2SiO_4$ phosphor particles having submicrometer sizes were synthesized by a solid-state reaction method using methyl hydrogen polysiloxane-treated ZnO, fumed $SiO_2$ and various Mn sources. The crystallization and photoluminescent properties of the phosphor particles were investigated by X-ray diffraction(XRD), scanning electron microscope(SEM), and by their photoluminescence(PL) spectra. Due to the effect of the dispersion and coherence of the methyl hydrogen polysiloxane-treated ZnO, the Mn-doped $Zn_2SiO_4$ particles were successfully obtained by a solid state method at $1000^{\circ}C$, and the maximum PL intensity of the prepared particles under vacuum ultra violet(VUV) excitation occurred at a Mn concentration of 0.02mol and a sintering temperature of $1000^{\circ}C$.

First Principles Calculations on Electronic Structure and Magnetism of Transition Metal Doped ZnO (전이금속이 도핑된 ZnO의 전자구조와 자성에 대한 제일원리계산)

  • Yun, Sun-Young;Cha, Gi-Beom;Hong, Sun-C.
    • Journal of the Korean Magnetics Society
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    • v.15 no.1
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    • pp.1-6
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    • 2005
  • In this study we investigate the electronic structure and magnetism of transition metal (TM = Ti, Cr, Mn, Fe, Co, Ni, Ru, Pd, Ag ) deped ZnO($TM_{0.25}Zn_{0.75}O$), which are expected to have Curie temperature. Full-potential Linearized Augmented Plane Wave(FLAPW) metod is adopted with exchange-correlation potential expressed as general gradient approximation(GGA). The calculated magnetic moments of ($TM_{0.25}Zn_{0.75}O$) are 0.83, 3.03, 4.03, 3.48, 2.47, 1.56, 0.43, 0.75, 0.01 ${\mu}_B$ for TM = Ti, Cr, Mn, Fe, Co, Ni, Ru, Pd, Ag, respectively. The nearest neighbor O atom to the transition metal is calculated to have a significant magnetic moment of about 0.1${\mu}_B$, ?? 새 strong hybridization between O-p and TM-d bands. As the results, the systems may have larger magnetic moments in total, compared to the corresponding isolated atoms. The 3d TM doped systems exhibit the half-metallic character except Co, wheres the 4d TM doped systems behave like normal metals and low spin polarization at the Fermi levels.

The Structura1 Properties of the $0.6Ba(Zn_{1/3}Ta_{2/3])O_3-0.4Ba(Co_{1/3}Nb_{2/3})O_3$Ceramics with the Sintering Temperature (소결온도에 따른 $0.6Ba(Zn_{1/3}Ta_{2/3])O_3-0.4Ba(Co_{1/3}Nb_{2/3})O_3$ 세라믹스의 구조적 특성)

  • 이상철;류기원;이성갑;배성기;이영희
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2000.07a
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    • pp.383-386
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    • 2000
  • The 0.6Ba(Zn$_{1}$3/Ta$_{2}$3/)O$_3$-0.4Ba(Co$_{1}$3/Nb$_{2}$3/)O$_3$ceramics were prepared by the conventional mixed oxide method. The structural properties of the 0.6BZT-0.4BCN ceramics with the sintering temperature were investigated by XRD, SEM. The 0.6BZT-0.4BCN ceramics had a complex-perovskite structure. Increasing the sintering temperature, the peak intensity of the superstructure reflection plane were increased and the density and ordering were increased. The density of the 0.6BZT-0.4BCN ceramics sintered at 1475$^{\circ}C$ was 6.455[g/cm$^3$].

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Microwave Properties of Ba-$Co_2Z$ Ferrite with Zn addition (Zn 첨가에 따른 Ba-$Co_2Z$ 페라이트의 마이크로파 특성)

  • Kim, Jae-Sik;Choi, Eui-Sun;Ryu, Ki-Won;Koh, Jung-Hyuk;Lee, Young-Hee
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2010.06a
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    • pp.299-299
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    • 2010
  • In this study, microwave properties with compositions and frequency of the $Ba_3Co_2Fe_{24}O_{41}$ ceramics with Zn substitution for Co were investigated. From the XRD patterns, hexagonal structure of Z-type phase was existed as main phase. Diffraction peaks of Z-type phase were shifted to lower angle by Zn substituted for Co site. The permittivity was increased with Zn additions. In all composition, loss tangent of permittivities were increased with frequency. Permeability and magnetic resonance frequency were increased with Zn additions. Permeability was increased and loss tangent of permeability was decreased rapidly over 600 MHz~800 MHz. The loss tangent of permeability did not changed with composition ratio. In the case of $Ba_3Co_{1.6}Zn_{0.4}Fe_{24}O_{41}$ ceramics sintered at $1250^{\circ}C$ for 3 hours, the permittivity, loss tangent of permittivity, permeability and loss tangent of permeability were 28.277, 0.193, 22.992 and 0.065 at 310 MHz, respectively.

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Electrical and Dielectric Properties of Zn-Pr-Co-Cr-Dy Oxides-based Varistors (Zn-Pr-Co-Cr-Dy 산화물계 바리스터의 전기적, 유전적 특성)

  • 남춘우;박종아;김명준;류정선
    • Journal of the Korean Ceramic Society
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    • v.40 no.10
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    • pp.943-948
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    • 2003
  • The microstructure and electrical characteristics of Zn-Pr-Co-Cr-Dy oxides-based varistors were investigated with Dy$_2$ $O_3$ content in the range of 0.0∼2.0 ㏖%. As Dy$_2$ $O_3$ content is increased, the average grain size was decreased in the range of 18.2∼4.6 $\mu\textrm{m}$ and the ceramic density was decreased in the range of 5.49∼4.64 g/㎤. The incorporation of Dy$_2$ $O_3$ markedly enhanced the nonlinear properties of varistors more than 9 times in nonlinear exponent, compared with the varistor without Dy$_2$ $O_3$ The varistor with 0.5∼1.0 ㏖% Dy$_2$ $O_3$ exhibited the high nonlinearity, in which the nonlinear exponent is above 55 and the leakage current is below 1.0 ${\mu}\textrm{A}$. The donor concentration and the density of interface states were decreased in the range of (4.66∼0.25)${\times}$10$\^$18//㎤ and (5.70∼1.39)${\times}$10$\^$12//$\textrm{cm}^2$, respectively, with increasing Dy$_2$ $O_3$ content. The minimum dielectric dissipation factor of 0.0023 was obtained for 0.5 ㏖% Dy$_2$ $O_3$, but further addition of Dy$_2$ $O_3$ increased it.

Oxidation Reaction of CO and $C_2H_4$ on Zinc Oxide (산화아연에서의 CO, $C_2H_4$의 산화반응)

  • Chong Soo Han;Hakze Chon
    • Journal of the Korean Chemical Society
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    • v.24 no.3
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    • pp.218-224
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    • 1980
  • The surface reactions of CO and $C_2H_4$ with adsorbed oxygen on ZnO were studied by means of EPR spectroscopy. The EPR spectra of $O_2$ adsorbed ZnO at various temperatures were compared, and the signal at g = 2.014 was characterized as trapped $O^-$ at oxygen vacancy. CO and $C_2H_4$ react with $O^-$ at $25^{\circ}C$ and desorbed as $CO_2$ and $H_2O$ above $200^{\circ}C$. $O_2^-$ species interact with $C_2H_4$ about $100^{\circ}C$, but desorption of partial oxidation products also was not observed until the temperature was raised to $200^{\circ}C$.

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Synthesis and Optical Characteristics of Green-Emitting (Mg,Zn)$Al_2O_4:Mn^{2+}$ Phosphor for 3D- PDP Applications

  • Han, Bo-Yong;Yoo, Jae-Soo;Heo, Eun-Gi;Yoo, Young-Gil
    • 한국정보디스플레이학회:학술대회논문집
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    • 2009.10a
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    • pp.272-275
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    • 2009
  • A new green phosphor, ($Mg_{1-x-yZnx)$)$Al_2O_4:Mn^{2+}{_y}$ (0 x 0.6, 0.001 y 0.01), was synthesized by a flux-assisted solid reaction and its vacuum ultraviolet (VUV) excitation and emission characteristics were examined in this study. The chromaticity and peak intensity of the $(Mg_{0.79}Zn_{0.2})Al_2O_4:Mn^{2+}{_{0.01}}$ (x = 0.177, y = 0.745) phosphor were found to be more desirable than that of $Zn_2SiO_4:Mn^{2+}$ (x = 0.216, y = 0.72) phosphor as a green primary color.

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Effect of Dy addition on $Zn_2SiO_4:Tb$ green Phosphor ($Zn_2SiO_4:Tb$ 녹색 형광체의 Dy 첨가 효과)

  • Im, Won-Bin;Kang, Jong-Hyuk;Lee, Dong-Chin;Jeon, Duk-Young
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2003.07b
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    • pp.968-971
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    • 2003
  • Due to a low efficiency of phosphor with large Stoke shift in Vacuum Ultra Violet (VUV) excitation environment, new PDP phosphors which can be excited in UV excitation environment need to be developed. In this study, $Zn_2SiO_4:Tb$ phosphor was synthesized by solid-state reaction method at $1300^{\circ}C$ with varying Tb concentration, and its cross relaxation effect was observed by Photoluminescence (PL) measurement. In order to decrease $^5D_3{\to}7F_j$ transition with blue emission in $Zn_2SiO_4:Tb$ phosphor, Dy, co-activator element, was added to $Zn_2SiO_4:Tb$ phosphor. In 254nm excitation environment, broad-emission peak was observed around 524nm, green emission.

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The Single Crystal Growth Method of undoped and Co-doped $Zn_4SnSe_6$ ($Zn_4SnSe_6:Co^{2+}$ 단결정의 성장방법에 관한 연구)

  • Kim, D.T.;Park, K.H.;Hyun, S.C.;Bang, T.H.;Kim, N.O.;Kim, H.G.
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2006.05a
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    • pp.27-30
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    • 2006
  • In this paper, the undoped and Co-doped $Zn_4SnSe_6$ single crystals grown by the chemical transporting reaction(CTR) method using iodine as a transporting agent are investigated. For the crystal growth, the temperature gradient of the CTR furnace was kept at $680^{\circ}C$ for the source zone and at $780^{\circ}C$ for the growth zone for 7days. It was found from the analysis of x-ray diffraction that the $Zn_4SnSe_6$ and $Zn_4SnSe_6Co^{2+}$ compounds have a monoclinic structure. The direct optical energy band gap of the $Zn_4SnSe_6$ and $Zn_4SnSe_6Co^{2+}$ single crystals at 300K were found to be 2.146eV and 2.042eV.

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