• 한국표면공학회:학술대회논문집
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• 한국표면공학회 2015년도 춘계학술대회 논문집
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• pp.103-104
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• 2015

정확한 두께와 조성 제어, 훌륭한 재현성의 박막을 형성할 수 있는 Atomic layer deposition 방법으로 증착시킨 ZnO 박막은 여러 분야에 적용될 수 있기 때문에 최근 많은 주목을 받고 있다. ALD-ZnO 박막을 형성하기 위하여 가장 흔히 사용되는 전구체 (precursor)와 반응체 (reactant)는 DEZ(DiethylZinc)와 $H_2O$이다. 그러나 DEZ 전구체를 사용한 ALD-ZnO 박막은 낮은 열적 안정성이 문제로 지적되어져 왔으며, 또한 여러 분야의 적용 및 산업화를 위해서는 높은 증착률, 큰 범위의 전기적 저항, 높은 투과도가 필요로 한다. 본 연구에서는 atomic layer deposition 기법을 통해 열적 안정성을 가진 새로운 전구체인 DEZDMEA ($Et_2Zn:NEtMe_2$)을 사용하여 ZnO 박막을 증착하였다. DEZDMEA ($Et_2Zn:NEtMe_2$) 및 $H_2O$ 주입 시간에 따른 증착률와 전기적 성질, 투과도를 조사하였다.

• Journal of Electrochemical Science and Technology
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• 제14권2호
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• pp.162-173
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• 2023

Aqueous zinc-ion batteries are considered as promising alternatives to lithium-ion batteries for energy storage owing to their safety and cost efficiency. However, their lifespan is limited by the irreversibility of Zn anodes because of Zn dendrite growth and side reactions such as the hydrogen evolution reaction and corrosion during cycling. Herein, we present a strategy to restrict direct contact between the Zn anode and aqueous electrolyte by fabricating a protective layer on the surface of Zn foil via phosphidation method. The Zn₃(PO₄)₂ protective layer effectively suppresses Zn dendrite growth and side reactions in aqueous electrolytes. The electrochemical properties of the Zn₃(PO₄)₂@Zn anode, such as the overpotential, linear polarization resistance, and hydrogen generation reaction, indicate that the protective layer can suppress interfacial corrosion and improve the electrochemical stability compared to that of bare Zn by preventing direct contact between the electrolyte and the active sites of Zn. Remarkably, MnO₂ Zn₃(PO₄)₂@Zn exhibited enhanced reversibility owing to the formation a stable porous layer, which effectively inhibited vertical dendrite growth by inducing the uniform plating of Zn²⁺ ions underneath the formed layer.

• 한국진공학회지
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• 제19권5호
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• pp.385-390
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• 2010

원자층 증착법(Atomic Layer Deposition, ALD)을 이용하여 ZnO 나노막대에 ZnO:Al과 $Al_2O_3$를 코팅하여 coaxial 형태의 나노선 구조를 제작하여 광학적 특성을 분석하였다. 반도체인 ZnO:Al을 코팅하는 경우 Al이 ZnO층에 확산되어 ZnO에 도핑이 되는 효과를, $Al_2O_3$를 코팅하는 경우 반도체-절연체 계면 상태가 존재함을 광전이 특성을 이용하여 확인하였다.

• 한국세라믹학회지
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• 제38권12호
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• pp.1093-1096
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• 2001

ZnO내 $Al_2$ $O_3$의 고용은 $Al^{3+}$ 의 ZnO 결정의 $Zn^{2+}$자리, 즉 wurtizite 구조에서 4개의 산소가 만드는 4면체 공간자리로서 치환반응으로 정의될 수 있다. 이 반응은 아연-빈자리 혹은 산소-빈자리와 연관되어 일어나므로 ZnO의 비화학량론성 및 결정결함반응들과 상관관계를 가진다. 이러한 상호연관성은 아연-빈자리 및 산소분압(P $o_2$) 의존성을 낳으며, 결과적으로 ZnO내 Al 용해도([Al/sug zn/]$_{max}$)의 산소분압 의존성을 야기한다. 본 논문은 ZnO내에 Al의 용해도는 산소분압이 증가하면 감소한다는 것을 처음으로 곗나하여 보고한다. [A $l_{zn}$ ]$_{max}$ $P_{o2}$$^{-1}$4/./.

• 분석과학
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• 제14권3호
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• pp.259-265
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• 2001

ZnO, CdS, rutile-$TiO_2$ 및 혼합 rutile-$TiO_2$/ZnO와 같은 여러 반도체를 이용하여 Congo Red를 광 촉매 분해시켰다. 연구 결과 ZnO, CdS, rutile-$TiO_2$ 중에서는 CdS의 광 촉매 효과가 제일 컸는데 이것은 CdS가 제일 작은 band gap 에너지를 가지고 있기 때문이었다. 또한 혼합 촉매에서는 ZnO의 함량이 rutile-$TiO_2$에 비하여 상대적으로 높을수록 분해 반응을 촉진하였다. 이것은 $Zn^{2+}$ 가수분해 생성물이 구조적으로 안정한 화합물인 rutile-$TiO_2$의 표면을 덮음으로서 자외선 흡수를 차단하기 때문에 라디칼 생성을 저해하기 때문이었다.

• 한국재료학회지
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• 제23권2호
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• pp.98-103
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• 2013

$Mg_{3-x}Zn_xSb_2$ powders with x = 0-1.2 were fabricated by mechanical alloying in a planetary ball mill with a speed of 350 rpm for 24 hrs and then hot pressed under a pressure of 70 MPa at 773 K for 2 hrs. It was found that there were systematic shifts in the X-ray diffraction peaks of $Mg_3Sb_2$ (x = 0) toward a higher angle with increasing Zn for both the powder and the bulk sample and finally the phase of $Mg_{1.86}Zn_{1.14}Sb_2$ was formed at the Zn content of x = 1.2. The $Mg_{3-x}Zn_xSb_2$ compounds had nano-sized grains of 21-30 nm for the powder and 28-66 nm for the hot pressed specimens. The electrical conductivity of hot pressed $Mg_{3-x}Zn_xSb_2$ increased with increasing Zn content and temperature from 33 $Sm^{-1}$ for x = 0 to 13,026 $Sm^{-1}$ for x = 1.2 at 323 K. The samples for all the compositions from x = 0 to x = 1.2 had positive Seebeck coefficients, which decreased with increasing Zn content and temperature, which resulted from the increased charge carrier concentration. Most of the samples had relatively low thermal conductivities comparable to the high performance thermoelectric materials. The dimensionless figure of merit of $Mg_{3-x}Zn_xSb_2$ was directly proportional to the Zn content except for the compound with Zn = 1.2 at high temperature. The $Mg_{3-x}Zn_xSb_2$ compound with Zn = 0.8 had the largest value of ZT, 0.33 at 723 K.

• 한국세라믹학회지
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• 제36권10호
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• pp.1108-1114
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• 1999

Microstructure and electrical properties of ZnO-doped (0-5 mol%) 0.05 Pb(Mn1/3Sb2/3)O3-0.95 PZT ceramics were investigated. Sintering temperature was decreased to 100$0^{\circ}C$ due to eutetic reaction between PbO and ZnO. Grain-size increased up to adding 1mol% ZnO and then decreased. Compositions of grain and grain-boundary were investigated by WDS. Lattice parameter was decreased with ZnO addition. Density increased with ZnO addition and reached to the maximum of 7.84(g/cm2) at 2 mol% ZnO. The effect of ZnO on electrical properties of PMS-PZT was investigated. At 3mol% ZnO addition electromechanical coupling factor(kp) was about 50% and relative dielectric constant($\varepsilon$33/$\varepsilon$0) was 997 Mechanical quality factor(Qm) decreased with ZnO addition. Lattice parameters and tetragonality(c/a) were measured to investigate relationship between the electric properties and substitution of Zn2+. At 3 mol% ZnO tetragonality was maximiged at c/a=1.0035 Curie temperature (Tc) decreased slightly with ZnO addition.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2006년도 영호남 합동 학술대회 및 춘계학술대회 논문집 센서 박막 기술교육
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• pp.23-24
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• 2006

We have synthesized electroluminescence materials. including [2-(2-hydroxyphenyl)benzoxazole] (Zn(HPB)$_2$), [(2-(2-hydroxyphenyl)benzoxazole)(8-hydoxyquinoline)] (Zn(HPB)q) and [(1, 10-phenanthroline)(8-hydroxyquinoline)] Zn(phen)q. The ionization potential (IP) and electron affinity (EA) of each Zn-complex was measured using cyclic-voltammetry (C-V). Basing on the consideration of matched in the energy levels of the materials. We investigated the electron transporting properties of Zn(HPB)q and Zn(phen)q compared with $Alq_3$, and also we investigated the hole blocking properties of Zn(HPB)$_2$, compared with BCP. As a result, we used Zn-complex to enhance the performance of OLED. Therefore, we demonstrate that Zn(HPB)q and Zn(phen)q are useful as an electron transporting material. Zn(HPB)$_2$ is also good a hole blocking material.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2006년도 하계학술대회 논문집 Vol.7
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• pp.416-417
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• 2006

Organic light emitting diodes (OLEDs) show a lot of advantages for display purposes. Because OLEDs provide white light emission with a high efficiency and stability, it is desirable to apply OLEDs as an illumination light source and back light in LCD displays. We synthesized new emissive materials, namely [2-(2-hydroxyphenyl)benzoxazole] ($Zn(HPB)_2$) and [(2-(2-hydroxyphenyl)benzoxazole)(8-hydoxyquinoline)] (Zn(HPB)q), which have a low molecular compound and thermal stability. We studied white OLEDs using $Zn(HPB)_2$ and Zn(HPB)q. The fundamental structures of the white OLEDs were ITO/PEDOT:PSS (23 nm)/NPB (40 nm)/$Zn(HPB)_2$ (40 nm)/Zn(HPB)q (20 nm)/$Alq_3$ (10 nm)/LiAl (120 nm). As a result, we obtained a maximum luminance of $15325\;cd/m^2$ at a current density of $997\;mA/cm^2$. The CIE(Commission International de l'Eclairage) coordinates are (0.28, 0.35) at an applied voltage of 9.75 V.

• 한국전기전자재료학회논문지
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• 제23권9호
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• pp.681-684
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• 2010

The $TiO_2$/ZnS/Ag/ZnS/$TiO_2$ multilayered structure for the transparent electrodes in plasma display panel was designed by essential macleod program (EMP) and the multilayered film was deposited on a glass substrate by direct-current (DC)/radio-frequency (RF) magnetron sputtering system. During film deposition process, the Ag layer in $TiO_2$/Ag/$TiO_2$ structure became oxidized and the filter characteristic was degraded easily. In this study, ZnS layer was adopted as a diffusion blocking layer between $TiO_2$ and Ag to prevent the oxidation of Ag layer efficiently in $TiO_2$/ZnS/Ag/ZnS/$TiO_2$ structure. Based on the AES depth profiling analysis, the Ag layer was effectively protected by the ZnS layer as compared with the $TiO_2$/Ag/$TiO_2$ multilayered films without ZnS as an antioxidant layer. The 3 times stacked $TiO_2$/ZnS/Ag/ZnS/$TiO_2$ films have low sheet resistance of $1.22{\Omega}/{\square}$ and luminous transmittance was as high as 62% in the visible ranges.