• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2004년도 추계학술대회 논문집 Vol.17
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• pp.439-442
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• 2004

The effects of sintering additives on the low-temperature sintering and microwave dielectric properties of $Mg_4Nb_2O_9$ dielectric ceramics were studied. When $3{\sim}20wt%$ of $0.242Bi_2O_3-0.758V_2O_5$ was added, the sintering temperature decreased from $1100{\sim}1300^{\circ}C$ to $950^{\circ}C$ and high density was obtained. When $Mg_4Nb_2O_9$ was sintered at $950^{\circ}C$ with 10wt% of sintering additive, the microwave dielectric properties of $Q{\times}f_0\;=\;80.035GHz,\;\epsilon_r\;=\;13.3\;and\;\tau_f\;=\;-12.9\;ppm/^{\circ}C$ were obtained.

• 한국표면공학회지
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• 제44권3호
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• pp.89-94
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• 2011

In this study, the photocurrent characteristics of plasma sprayed $TiO_2$ coatings have been investigated according to additive transition metal (Fe, Mn, Nb powder) and heat treatment conditions. The plasma sprayed $TiO_2$ coatings by heat treatment at $400^{\circ}C$ and 90 min had the higher photocurrent at ultraviolet light, no photocurrent at visible light. The photocurrent of plasma sprayed $TiO_2$ coatings added by Fe, Mn, Nb (named by plasma sprayed $TiO_2$ composite coatings) was lower than that of plasma sprayed $TiO_2$ coatings at ultraviolet light, as was low in intensity ratio of XRD(101)/(110). and the atomic percentage of oxygen by plasma sprayed $TiO_2$ composite coatings was higher than that by plasma sprayed $TiO_2$ coatings. The photocurrent of plasma sprayed $TiO_2$ composite coatings in heat treatment at $400^{\circ}C$ and 90 min was higher than that of plasma sprayed $TiO_2$ coatings in same heat treatment conditions at ultraviolet and visible light, as was high in oxygen affinity by heat treatment.

• 전기화학회지
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• 제18권1호
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• pp.7-16
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• 2015

전기도금공정을 이용하여 상온에서 제조된 Cu박막의 특성에 미치는 피로인산구리용액의 화학성분($Cu^{2+}$ 농도, $K_4P_2O_7$ 농도, 첨가제 농도)의 영향에 대한 연구를 수행하였다. 전류효율은 도금용액의 $Cu^{2+}$ 농도가 0.3 M까지 높아짐에 따라 거의 100%까지 증가하는 경향을 나타내었다. $K_4P_2O_7$ 농도는 1.5~1.8 M 농도에서 전류효율의 감소를 나타내었으나, 0.9~1.3 M과 2.1~2.4 M에서는 거의 100%의 전류효율을 나타내었다. 첨가제의 농도 변화는 전류효율에는 거의 영향을 미치지 않았다. 전기도금 된 Cu 박막의 잔류응력은 도금용액의 $Cu^{2+}$ 농도가 0.15 M 이하에서는 약 20 MPa로 측정되었으나, $Cu^{2+}$ 농도가 증가함에 따라 증가하다가 0.25 M 에서 약 120 MPa의 최대치를 나타내었다. 한편 도금용액의 $K_4P_2O_7$ 농도가 0.9 M로부터 2.4M로 증가할수록 잔류 응력은 80MPa로부터 0 MPa까지 감소하는 경향을 나타내었으며, 첨가제의 농도는 잔류응력에 영향을 미치지 않은 것으로 관찰되었다. 표면형상의 경우 $Cu^{2+}$ 농도와 $K_4P_2O_7$ 농도는 상당한 영향을 미쳤으나, 첨가제는 약간의 영향만을 나타내었다. XRD 분석 결과 $Cu^{2+}$ 농도와 $K_4P_2O_7$ 농도는 Cu 박막의 미세조직에 상당한 영향을 미쳤으나, 첨가제는 거의 영향을 미치지 않는 것으로 나타났다. $Cu^{2+}$ 농도와 $K_4P_2O_7$ 농도가 증가할수록 (111) 피크의 강한 우선방향성이 나타내었다.

• 한국세라믹학회지
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• 제17권2호
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• pp.75-79
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• 1980

The effect of the additive on the dielectric property of $TiO_2$ containing 0-2.5wt %. $Sb_2O_3$ was investigated as a function of frequency from $5{\times}10^4$ to $6.3{\times}10^7$ cps and temperature from 25 to 375$^{\circ}C$. The dielectric constant increased with increasing $Sb_2O_3$ concentration from 0.25 to 0.5wt.% It is due to space charge polarization caused by increasing anion vacanices. The dielectric constant decreased for further increase in $Sb_2O_3$ concentration. It can be explained by increasing grain size effect rather than space charge polarization.

• 한국표면공학회지
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• 제34권5호
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• pp.403-408
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• 2001

In this work, the cyclic perfluorinated ether (c-C$_4$F$_{8}$O) with very high destructive removal efficiency (DRE) than other alternative gases, such as $C_3$F$_{8}$, c-C$_4$F$_{8}$ and NF$_3$ was used as an alternative process chemical. The plasma cleaning of silicon nitride using gas mixtures of c-C$_4$F$_{8}$O/O$_2$ and c-C$_4$F$_{8}$O/O$_2$+ $N_2$ was investigated in order to evaluate the effects of adding $N_2$ to c-C$_4$F$_{8}$O/O$_2$ on the global warming effects. Under optimum condition, the emitted net perfluorocompounds (PFCs) during cleaning of silicon nitride were quantified and then the effects of additive $N_2$ by obtaining the destructive removal efficiency (DRE) and the million metric tons of carbon equivalent (MMT-CE) were calculated. DRE and MMTCE were obtained by evaluating the volumetric emission using. Fourier transform-infrared spectroscopy (FT-IR). During the cleaning using c-C$_4$F$_{8}$O/O$_2$+$N_2$, DRE values as high as (equation omitted) 98% were obtained and MMTCE values were reduced by as high as 70% compared to the case of $C_2$F$_{6}$O$_2$. Recombination characteristics were indirectly investigated by combining the measurements of species in the chamber using optical emission spectroscopy (OES), before and after the cleaning, in order to understand any correlation between plasma and emission characteristics as well as cleaning rate of silicon nitride.silicon nitride.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2002년도 춘계학술대회 논문집 초전도 자성체
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• pp.64-67
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• 2002

The Physical and magnetic properties such as microstructure, permeability and power loss of Ni-Zn ferrite with composition of $Ni_{0.8}Zn_{0.2}Fe_2O_4$, were investigated as the function of $Bi_2O_3$ and CaO contents. The power loss increased in proportion to the amount of $Bi_2O_3$ up to 0.3 wt% but it decreased over than 0.3 wt% addition. The highest permeability of 134 was obtained to the specimen added 1.0 wt% $Bi_2O_3$ since $Bi_2O_3$ contents were strongly dominant to grain growth and size than that of CaO. $Bi_2O_3$ liquid phase created during sintering process promoted sintering and grain growth so that grain size and permeability increased compared to that of the specimens which were sintered with free-additive and CaO. Also, lots of pores existed in the specimen which was added $Bi_2O_3$ wt% with the biggest grain size.

• Journal of Korean Vacuum Science & Technology
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• 제3권1호
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• pp.24-29
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• 1999

The characteristic behaviors of CH3Br were examined first for the dry etching of polysilicon in a Cl2/CH3Br/O2 plasma. CH3Br is revealed one of the excellent additive gases to control anisotropy of etching profile and to give no undercutting for various typed of polysilicons. CH3Br acts as a passivation precursor on the side wall in etch cavity by forming polymer-like films such as CHxBry(x+y=1,2). The decrease of etch selectivity due to the reaction if the C-containing species from CH3Br with the surface O atoms of SiO2 was overcome by the addition of O2 into plasma, resulting that the selectivity increased by 2~3 times. According to the results of optical emission signals, CH3Br should be dissociated into several fragments to give more hydrogen atoms than bromine atoms in our helical resonator system.

• 디지털산업정보학회논문지
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• 제12권3호
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• pp.25-31
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• 2016

Mechanical properties of Y2O3-containing tetragonal ZrO2 polycrystals(Y-TZP) were investigated. Several additives were used to modify the hardness and fracture toughness of Y-TZP. The effects of these individual additives were discussed and their interactions were also analysed. Each additive, such as CoO, Fe2O3, MnO2 was found to deteriorate the mechanical properties of Y-TZP when it was used singly. But the fracture toughness of Y-TZP was significantly improved when these additives and Al2O3 were added in combination at a certain ratio. The addition of CoO, Fe2O3 and MnO2 into Y-TZP resulted in the more complex behavior of fracture toughness and hardness. The specimen with 1.5 wt%-Fe2O3, 3.0 wt% -Al2O3 and 1.5 wt%-CoO showed the monoclinic to tetragonal phase ratio of 18% and the highest toughness of $10.8MPa{\cdot}m1/2$ with Vickers hardness of 1201 kgf/mm2. However, the toughness decreased as the ratio increased and macrocracks developed beyond the ratio of 25%. Sample No. 16 is improved high Physical and Mechanical Properties.

• 한국세라믹학회지
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• 제27권6호
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• pp.799-807
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• 1990

In this study, effects of oxide additives on mechanical properties and microstructure of A1N and A1N polytype ceramics were investigated. Fine A1N powder was synthesized by nitriding alumiuim hydroxide prepared from Al-isopropoxide, at 1350$^{\circ}C$ for 10h in N2 atmosphere. By adding 3w/o Y2O3, 0.56w/o CaO, and 10w/o SiO2 to AlN powder, AlN and AlN polytype ceramics were prepared by hot-pressing under the pressure of 30 MPa at 1800$^{\circ}C$ for 1h. AlN ceramics with no additives formed considerable amount of AlON phase, while AlN ceramics doped with Y2O3 or CaO decreased AlON phase and formed Y-Al or Ca-Al oxide compound. AlN＋10w/o SiO2(＋3w/o Y2O3) composition produced AlON and AlN polytype compound having 21R as a major phase. Room temperature flexural strength of AlN ceramics with no additive was 246MPa, and room temperature flexural strength and critical temperature difference by thermal shock(ΔTc) of AlN ceramics dooped with Y2O3 or CaO were 532MPa/340$^{\circ}C$ and 423MPa/300$^{\circ}C$, respectively. Y2O3 and CaO used as sintering agent played roles of densification and oxygen removal of AlN ceramics, and affected grain growth/grain morphologies of AlN ceramics.

• 동굴
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• 제76호
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• pp.15-17
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• 2006

[ $YBa_2Cu_3O_{7-{\delta}}$ ] superconductor films have been prepared on silver substrates by electrophoretic deposition. As silver does not react with $YBa_2Cu_3O_{7-{\delta}}$ compound and has little influence on its superconductivity, it is usually doped in $YBa_2Cu_3O_7$ to improve the strength of the material and eliminate micro cracks. It has been proved that Ag additive can lower the melting temperature of $YBa_2Cu_3O_{7-{\delta}}$ and act as linking bridge among $YBa_2Cu_3O_{7-{\delta}}$ particles, thus in this paper Ag doped $YBa_2Cu_3O_{7-{\delta}}$ thick films are prepared by electrophoretic co deposition. As there are only some referenced experience formula and models for co electrophoretic deposition and does not exist unified explanation, the behavior of Ag particles during co electrophoretic deposition is also studied.