• 제목/요약/키워드: $YBa_{2}Cu_{3}O_{7-x}$ films

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Reactor design of PECVD system using a liquid aerosol feed method (미립액상법을 위한 PECVD 반응로설계)

  • 정용선;오근호
    • Journal of the Korean Crystal Growth and Crystal Technology
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    • v.7 no.2
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    • pp.235-243
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    • 1997
  • The high-$T_c$ superconducting phase, $YBa_2Cu_3O_x$, was deposited on the single crystal MgO substrate, using a liquid aerosol feed method in a plasma enhanced chemical vapor deposition(PECVD) reactor. The effect of the plasma distribution depending on the design of a reactor was studied by the analysis of the microstructures of thin films. The particles landed were frequently observed on the films and the two causes that were responsible for the particle deposition were explained. The particles were deposited by the unstable and non-uniform plasma and the low evaporation rate of the precursors. Also, the thin film deposition rate decreased significantly as the distance between the evaporating location and the substrate increased.

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Accurate Measurements of the Unloaded Q of a Dielectric-loaded High-Q $TE_{01{\delta}}$ mode Cavity Resonator with HTS Endplates

  • Kwon, H.J.;Hur, Jung;Lee, Sang-Young
    • Progress in Superconductivity
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    • v.1 no.1
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    • pp.36-41
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    • 1999
  • Methods for mode identification and accurate measurements of the unloaded Q ($Q_0$) of a dielectric-loaded $TE_{01{\delta}}$ mode cavity resonator with HTS endplates are proposed. A resonator with a sapphire rod and $YBa_2Cu_3O_{7-x}$(YBCO) endplates was prepared and its microwave properties were studied at temperatures above 30 K. The $TE_{01{\delta}}$ mode $Q_0$ of the resonator, designed to work as a tunable resonator with variations in the gap distance (s) between the sapphire rod and the top YBCO, was more than 1000000 at s = 0 mm and at 30 K with the resonant frequency of 19.56 GHz. The $TE_{01{\delta}}$ mode $Q_0$ decreases as s increases for s < 2 mm until mode couplings between the $TE_{01{\delta}}$ mode and other modes appeared at s = 2 mm. Significant dependence of the $TE_{01{\delta}}$ mode $Q_0$ on the input and output coupling constants was also observed. Applications of the open-ended $TE_{01{\delta}}$ mode cavity resonator for a tunable resonator with a very high Q as well as a characterization tool for the surface resistance measurements of HTS films are described.

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Characteristics of Double-junction of High-$\textrm{T}_{c}$ Superconducting $\textrm{YBa}_{2}\textrm{Cu}_{3}\textrm{O}_{7-x}$ Step-edge Junctions (고온 초전도 $\textrm{YBa}_{2}\textrm{Cu}_{3}\textrm{O}_{7-x}$ 계단형 모서리 접합의 이중접합 특성)

  • Hwang, Jun-Sik;Seong, Geon-Yong;Gang, Gwang-Yong;Yun, Sun-Gil;Lee, Gwang-Ryeol
    • Korean Journal of Materials Research
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    • v.9 no.1
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    • pp.86-91
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    • 1999
  • We have fabricated high-$\textrm{T}_c$ superconducting $\textrm{YBa}_{2}\textrm{Cu}_{3}\textrm{O}_{7-x}$(YBCO) grain boundary junctions at a step-edge on (001) $\textrm{SrTiO}_3$(STO) substrates. A diamond-like carbon (DLC) film grown by plasma enhanced chemical vapor deposition were used as an ion milling mask to make steps on the STO (100) single crystal and was removed by an oxygen reactive ion etch process. The c-axis oriented YBCO and TO thin films were deposited epitaxially on the STO substrate with a step-edge by pulsed laser deposition. The grain boundary junctions were formed at the top and the bottom of the step. The junctions worked at temperatures above 77 K, and had I\ulcornerR\ulcorner products of 7.5mV at 16K and 0.3 mV at 77K, respectively. The I-V characteristics of these junctions showed the shape of the two noisy resistively shunted junction model.

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HTS Josephson Junctions with Deionized Water Treated Interface (증류수 계면처리를 이용한 고온초전도체 죠셉슨 접합 제작)

  • Moon, S.H.;Park, W.K.;Kye, J.I.;Park, J.D.;Oh, B.
    • Progress in Superconductivity
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    • v.2 no.2
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    • pp.76-80
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    • 2001
  • We have fabricated YBa$_2$Cu$_3$$O_{7-x}$ (YBCO) ramp-edge Josephson junctions by modifying ramp edges of the base electrodes without depositing any artificial barrier layer. YBa$_2$Cu$_3$O/7-x//SrTiO$_3$ (YBCO/STO) films were deposited on SrTiO$_3$(100) by on-axis KrF laser deposition. After patterning the bottom YBCO/STO layer, the ramp edge was cleaned by ion-beam and then reacted with deionized water under various conditions prior to the deposition of counter-electrode layers. The top YBCO/STO layer was deposited and patterned by photolithography and ion milling. We measured current-voltage (I-V) characteristics, magnetic field modulation of the critical current at 77 K. Some showed resistively shunted junction (RSJ)-type I-V characteristics, while others exhibited flux-flow behaviors, depending on the dipping time of the ramp edge in deionized water. Junctions fabricated using optimized conditions showed fairly uniform distribution of junction parameters such as I$_{c}$R$_{n}$ values, which were about 0.16 mV at 77 K with 1$\sigma$~ 24%. We made a dc SQUID with the same deionized water treated junctions, and it showed the sinusoidal modulation under applied magnetic field at 77 K. 77 K.

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Effects of High-temperature Annealing of CeO$_2$ Buffer Layers on the Surface Morphology of YBa$_2Cu_3O_{7-{\delta}}$ Films on CeO$_2$-buffered R-cut Sapphire Substrates (CeO$_2$ 완충층에 대한 고온 열처리가 CeO$_2$ 완충층을 지닌 R-cut 사파이어 기판 우에 성장된 YBa$_2Cu_3O_{7-{\delta}}$ 박막의 표면상태에 미치는 영향)

  • Lee, Jae-Hun;Yang, Woo-Il;Jang, Jeong-Mun;Ryu, Jae-Su;Komashko, V.A.;Lee, Sang-Yeong
    • 한국초전도학회:학술대회논문집
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    • v.9
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    • pp.152-159
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    • 1999
  • YBa$_2Cu_3O_{7-{\delta}}$ (YBCO) films grown on CeO$_2$-buffered r-cut sapphire substrates (CbS's) were prepared and their structural and electrical properties were measured. Post-annealed CeO$_2$ films were used as buffer layers for the experiments. It turned out that the YBCO films grown on post-annealed CbS's had the rms roughness of less than 20 ${\AA}$ and peak-to-peak roughness of about 30 ${\AA}$ when the YBCO film thickness was 3000 ${\AA}$. Meanwhile, YBCO films on in-situ grown CeO$_2$ buffer layers on r-cut sapphire substrates appeared to have the peak-to-peak roughness of more than 450 ${\AA}$. X-ray diffraction data revealed that the YBCO flms were epitaxially grown along the c-axis with the typical FWHM of(005) ${\theta}$ -2 ${\theta}$ peak about 0. 16 $^{\circ}$ and ${\Delta}$ ${\omega}$ of the (005) peak about 0.5 $^{\circ}$. T$_c$ > 87 K, ${\Delta}$T < 1 K and R(look)/R(100K) ${\ge}$3 were observed from the YBCO films. Applicability of the YBCO films for high-frequency applications was described.

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Interface Characterization of Supeconducting Thin Film on Sapphire Grown by an Excimer Laser (액시머 레이저로 증착된 초전도박막과 사파이어 기판간 계면 특성 분석)

  • 이상렬;박형호;강광용
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 1995.11a
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    • pp.148-151
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    • 1995
  • Excimer laser has been used to fabricate superconducting YBa$_2$Cu$_3$O$\sub$7-x/(YBCO) thin films on various substrates. An XeCl excimer laser with an wavelength of 308 nm was used to deposit both buffer layer and superconducting thin film on sapphire substrate. The characterizations of the interface between thin film and substrate were performed. The interfacial properties of thin films on buffered sapphire and on bare sapphire were compared. With a 20 nm PrBa$_2$Cu$_3$O$\sub$7-x/(PBCO) buffer layer, no diffusion layer was observed between film and substrate while the diffusion layer with about 30 nm thickness was observed between film and sapphire without buffer layer.

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Fabrication and Characterization of High Temperature Superconducting Thin Film on Metallic Substrate Using Laser Ablation (레이저 증착법을 이용한 금속기판상 고온초전도 박막증착 및 특성분석)

  • Lee, Sang-Yeol
    • Proceedings of the KIEE Conference
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    • 1995.11a
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    • pp.329-331
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    • 1995
  • Laser ablation was used to fabricate superconducting $YBa_2Cu_3O_{7-x}$ (YBCO) thin films on metallic substrates with an YSZ buffer layer. An ArF excimer laser with an wavelength of 193 nm was used to deposit both YSZ buffer layer and superconducting thin film. The characterizations of thin films were performed and compared. With a 200 nm YSZ buffer layer, c-axis orientation and $T_c$=85 K were obtained for a 200 nm-thick YBCO film.

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Prepatation of$(Ba_{0.5}, Sr_{0.5}) Tio_3$thin folms by Laser Ablation technique and their electrical properties with different electrodes (Laser Ablation에 의한 $(Ba_{0.5}, Sr_{0.5}) Tio_3$박막의 제조와 전극에 따른 전기적 특성)

  • Yun, Sun-Gil;Safari, A.
    • Korean Journal of Materials Research
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    • v.4 no.4
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    • pp.401-405
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    • 1994
  • The chemical composition and electrical properties were investigated for epitaxially crystallized $(Ba_{0.5}Sr_{0.5})Tio_3$ (BST) films deposited on Pt and $YBa_Cu_3O_{7-x}$(YBCO) electrodes by laser ablation technique. The crystalline quality of the heteroepitaxial BST films deposited on Pt bottom electrode was found to be better than that of BST film on YBCO electrode by the RBS analysis. Films deposited at $600^{\circ}C$ on Pt electrode showed a dielectric constant of 320 and a dissipation factor of 0.023 at 100kHz. Leakage current density of BST films on Pt electrode was smaller than that on YBCO bottom electrode. Their leakage current density was about 0.8$\mu \; A/ \textrm{cm}^2$ at an applied electric field of 0.15MV/cm.

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Microwave Properties of Tunable Phase Shifter Using High Temperature Superconducting Thin Film (고온초전도 박막을 이용한 튜너블 이상기의 마이크로파 특성)

  • Kwak Min Hwan;Kim Young Tae;Moon Seong Eon;Ryu Han Cheol;Lee Su Jae;Kang Kwang Yong
    • Progress in Superconductivity and Cryogenics
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    • v.7 no.1
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    • pp.13-16
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    • 2005
  • High temperature superconductor, $\YBa_2Cu_3O_{7-x}$ (YBCO) and ferroelectric, $\Ba_{0.1}Sr_{0.9}TiO_{3}$ (BST) multilayer thin films were deposited using on MgO(100) substrates pulsed laser deposition. The thin films exhibited only (001) peaks of YBCO and 1357 The HTS thin films demonstrated excellent zero resistance temperature of 92.5 K. We designed and fabricated HTS ferroelectric phase shifter using high frequency system simulator and standard photolithography method, respectively The HTS phase shifter shows a low insertion loss (2.97 dB) and large phase change ($\162^{circ}$) with 40 V do bias at 10 GHz. The HTS phase shifter shows 54 of figure of merit. These results can be applicable to phased anay antenna system for satellite communication services.