• 한국세라믹학회지
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• 제32권4호
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• pp.448-454
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• 1995

The effect of WO3 addition on microwave dielectric properties of BaTiO3-3{(1-x)TiO2-xWO3} system was studied. Addition of WO3 to this system resulted in the formation of BaWO4 and Ba2Ti9O20 phases. Both the dielectric constant (K) and the temperature coefficientof resonant frequency (Tf) were decreased with the amount of WO3 addition. The value of Q$\times$f0 was increased as the amount of WO3 was increased up to x=0.0275, and then decreased when x exceeded 0.03. At x=0.0275, this ceramic showed excellent microwave proprties of K=34-35, Q$\times$f0=50,000-53,000, and near zero ppm/$^{\circ}C$ of Tf.

• Bulletin of the Korean Chemical Society
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• 제28권10호
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• pp.1763-1770
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• 2007

Strong solid acid catalysts, NiO/Al2O3-TiO2/WO3 for ethylene dimerization were prepared by the addition of Al2O3 and the modification with WO3. The acid sites and acid strength were increased by the inductive effect of WO3 species bonded to the surface of catalysts. The larger the dispersed WO3 amount, the higher both the acidity and catalytic activity for ethylene dimerization. The addition of Al2O3 to TiO2 up to 5 mol% enhanced acidity and catalytic activity gradually due to the interaction between Al2O3 and TiO2 and consequent formation of Al-O-Ti bond.

• 한국세라믹학회지
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• 제34권3호
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• pp.281-288
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• 1997

유전율이 높고 온도안정성이 우수하다고 알려져 있는 40Pb(Mg1/3Nb2/3)O3-30PbTiO3-30Pb(Mg1/2W1/2)O3계 세라믹스에 소결온도를 낮추기 위하여 저온에서 액상을 형성하는 91PbO-9WO3를 과잉첨가하여 소결성, 미세구조 및 유전성의 변화에 대하여 조사하였다. 91PbO-9WO3의 첨가량이 증가함에 따라 소결온도가 저하하였으며 6 mol%첨가시는 875$^{\circ}C$에서 소결이 가능하였다. 유전율은 기본조성에서 16,400이었고, 첨가제가 1 mol% 과잉첨가된 경우 18,500으로 최대값을 나타냈으며 이후 첨가량이 증가함에 따라 감소하였다. 첨가제의 첨가량이 2~4mol%인 시편의 온도에 따른 유전율 변화곡선에서 double peak maxima가 나타났으나, 첨가량이 5 mol% 이상인 시편에서는 입계에 텅스텐을 많이 포함하고 있는 결정상이 생성되었고 double peak maxima는 나타나지 않았다.

• Journal of Ceramic Processing Research
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• 제19권5호
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• pp.434-438
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• 2018

The sintering behavior of $BaFe_{12}O_{19}$ with the addition of one and three weight % of $CuWO_4$ as a liquid phase sintering aid is studied. Samples are sintered in the temperature range $900-1250^{\circ}C$ and the effect of $CuWO_4$ addition on density, microstructure, phase composition and magnetic properties is examined. Compared to $BaFe_{12}O_{19}$ with no sintering aid addition, addition of 1 wt % $CuWO_4$ retards densification. Addition of 3 wt % $CuWO_4$ promotes densification at lower sintering temperatures but retards densification at temperatures > $1050^{\circ}C$. Three wt % $CuWO_4$ addition induces the formation of $BaWO_4$ and $Ba_3WFe_2O_9$ secondary phases at temperatures ${\geq}1100^{\circ}C$. Addition of $CuWO_4$ causes a decrease in saturation magnetization, remanent magnetization and coercivity.

• 한국전기전자재료학회논문지
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• 제15권9호
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• pp.794-797
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• 2002

Piezoelectric properties of PZT-PSN ceramics were investigated as a function of WO$_3$ addition from 0 wt% to 6.0 wt%. The dielectric and piezoelectric characteristics of PZT-PSN ceramics have been investigated at different calcination (80$0^{\circ}C$~90$0^{\circ}C$) and sintering (110$0^{\circ}C$~130$0^{\circ}C$) temperatures. The grain size was increased with the addition of WO$_3$and the sintering temperatures. Anisotropic properties of electromechanical coupling coefficient and piezoelectric coefficient are proven to be dependent on processing temperatures and amount of addition. At the specimen with 0.6 wt% WO$_3$ addition, using calcination temperature of 80$0^{\circ}C$ and sintering temperature of 110$0^{\circ}C$ , mechanical quality factor(Q$_{m}$) and electromechanical coupling coefficient(k$_{p}$) showed the excellent results of 1560 and 0.48, respectively Experimental results indicated that the PZT-PSN system ceramics with WO$_3$impurity could be effectively used for the microtransformer and actuator applications, etc.etc.

• 한국전기전자재료학회논문지
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• 제20권2호
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• pp.130-134
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• 2007

In this study, in order to. develop the low temperature sintering ceramics for multilayer piezoelectric actuator, PMN-PNN-PZT ceramics using CuO, $Bi_{2}O_{3}\;and\;Li_{2}CO_{3}$ as sintering aids were manufactured with the amount of $WO_{3}$ addition. The ceramics were sintered at $900,\;930,\;960^{\circ}C$, respectively. Thereafter, their microstructural, dielectric and piezoelectric properties were investigated. The $WO_{3}$ was proved to lower the sintering temperature of piezoelectric ceramics due to the effects of PbO and $WO_{3}$ liquid phase. At 0.3 wt% $WO_{3}$ added specimen sintered at $930^{\circ}C$, electromechanical coupling factor($k_{p}$), mechanical quality factor($Q_{m}$), dielectric constant and $d_{33}$ showed the optimum values as the values of 0.60, 1,402, 1,440 and 360 pC/N, respectively, for multilayer piezoelectric actuator application.

• 대한전기학회:학술대회논문집
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• 대한전기학회 2006년도 추계학술대회 논문집 전기물성,응용부문
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• pp.61-62
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• 2006

In this study, in order to develop the low temperature sintering ceramics for multilayer piezoelectric actuator, PMN-PNN-PZT ceramics using ${Fe_2}{O_3}$ and $WO_3$ as sintering aids were manufactured with the amount of $WO_3$ addition, and the specimens were sintered at 900, 930, $960^{\circ}C$, respectively. Thereafter, their dielectric and piezoelectric properties were investigated. The sintering aids were proved to lower the sintering temperature of piezoelectric ceramics due to the effects of ${Fe_2}{O_3}$ and $WO_3$ liquid phase. At 0.3wt% $WO_3$ added specimen sintered at $930^{\circ}C$, kp, Qm, dielectric constant and $d_{33}$ showed the optimum values of 0.60, 1402, 1440 and 360[pC/N], respectively, for multilayer piezoelectric actuator application.

• 한국재료학회지
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• 제15권7호
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• pp.486-490
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• 2005

Thin films of tungsten oxide and nickel oxide were deposited on $Al_2O_3/Si-substrate$ by high vacuum thermal evaporation. The properties of microstructure and crystallinity were analyzed by SEM and XRD respectively. $WO_3$ films without addition of NiO showed polycrystalline structure after annealing at $500^{\circ}C$ for SO min. There were the cracks between the polycrystalline grains and the crack width was increased with the thickness of $WO_3$ films. The cracks in the $WO_3$ films could be controlled by an optimum deposition of NiO on $WO_3$ films and either less or more than the optimum addition fails to suppress the cracks. A process mechanism to suppress the crack has been discussed.

• 한국결정성장학회지
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• 제24권5호
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• pp.213-218
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• 2014

Anatase $TiO_2$에 각기 다른 텅스텐(W) 함유원료와 제조방법을 적용하여 $WO_3$ 촉매가 첨가된 SCR(selective catalytic reduction)용 분말을 합성하였으며, W 촉매 첨가가 합성분말의 상합성 및 SCR 촉매능에 미치는 영향에 대해 연구하였다. 촉매의 지지체인 $TiO_2$는 침전법으로 anatase 상으로 합성되었으며, anatase에서 고온상인 rutile로의 상전이 온도는 $1200^{\circ}C$였으나, $WO_3$를 10 wt% 첨가할 경우 이 상전이 온도는 $900^{\circ}C$로 낮아졌다. 건식으로 $WO_3$ 분말을 직접 첨가하여 $WO_3(10wt%)/TiO_2$를 제조한 경우 $350^{\circ}C$에서 $NO_X$ 제거 촉매능이 최고점에 이르나 온도증가에 따라 그 효율이 상당히 감소하였다. 암모늄-메타-텅스테이트를 습식으로 첨가하여 제조한 경우, 보다 고온인 $450^{\circ}C$에서 촉매능이 최고점에 이르렀으며 온도에 따른 효율감소 폭도 적었다. 이와 같은 경향은 $WO_3$와 $V_2O_5$를 동시 첨가하여 제조한 $V_2O_5(5wt%)-WO_3(10wt%)/TiO_2$ 촉매에서도 나타났다. 즉, 암모늄-메타-텅스테이트를 습식으로 첨가한 경우, $WO_3$를 직접 첨가한 경우에 비해 넓은 온도범위($300^{\circ}C{\sim}500^{\circ}C$)에 걸쳐 90 %에 이상의 우수한 $NO_X$ 변환효율을 보였다.

• 센서학회지
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• 제15권2호
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• pp.120-126
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• 2006

Physicochemical and electrical properties for hydrogen gas sensors based on Pd-deposited $WO_3$ thin films were investigated as a function of Pd thickness, annealing temperature, and operating temperature. $WO_3$ thin films were deposited on an insulating material by thermal evaporator. XRD, FE-SEM, AFM, and XPS were used to evaluate the crystal structure, microstructure, surface roughness, and chemical property, respectively. The deposited films were grown $WO_3$ polycrystalline with rhombohedral structure after annealing at $500^{\circ}C$. The addition effect of Pd is not the crystallinity but the suppression of grain growth of $WO_3$. Pd was scattered an isolated small spherical grain on $WO_3$ thin film after annealing at $500^{\circ}C$ and it was agglomerated as an irregular large grain or diffused into $WO_3$ after annealing at $600^{\circ}C$. 2 nm Pd-deposited $WO_3$ thin films operated at $250^{\circ}C$ showed good response and recovery property.