• Journal of the Korean Ceramic Society
• /
• v.32 no.4
• /
• pp.448-454
• /
• 1995

The effect of WO3 addition on microwave dielectric properties of BaTiO3-3{(1-x)TiO2-xWO3} system was studied. Addition of WO3 to this system resulted in the formation of BaWO4 and Ba2Ti9O20 phases. Both the dielectric constant (K) and the temperature coefficientof resonant frequency (Tf) were decreased with the amount of WO3 addition. The value of Q$\times$f0 was increased as the amount of WO3 was increased up to x=0.0275, and then decreased when x exceeded 0.03. At x=0.0275, this ceramic showed excellent microwave proprties of K=34-35, Q$\times$f0=50,000-53,000, and near zero ppm/$^{\circ}C$ of Tf.

• Bulletin of the Korean Chemical Society
• /
• v.28 no.10
• /
• pp.1763-1770
• /
• 2007

Strong solid acid catalysts, NiO/Al2O3-TiO2/WO3 for ethylene dimerization were prepared by the addition of Al2O3 and the modification with WO3. The acid sites and acid strength were increased by the inductive effect of WO3 species bonded to the surface of catalysts. The larger the dispersed WO3 amount, the higher both the acidity and catalytic activity for ethylene dimerization. The addition of Al2O3 to TiO2 up to 5 mol% enhanced acidity and catalytic activity gradually due to the interaction between Al2O3 and TiO2 and consequent formation of Al-O-Ti bond.

• Journal of the Korean Ceramic Society
• /
• v.34 no.3
• /
• pp.281-288
• /
• 1997

The effects of 0 to 6 mol% excess 91PbO-9WO3 addition on the microstructure and the dielectric pro-perties in 40Pb(Mg1/3Nb2/3)O3-30PbTiO3-30Pb(Mg1/2W1/2)O3 ternary system were investigated. Excess 91PbO-9WO3 addition enhanced densification at relatively lower temperature due to the formation of liquid phase. The dielectric constant of the specimen with standard composition was 16,400 and that of specimen with 1 mol% excess additive was the maximum of 18,500. And more than 2 mol% excess addition decreased dielec-tric constant. Specimens with 2~4 mol% 91PbO-9WO3 addition showed dual peak maxima in the tem-perature dependence of dielectric constant. In the specimens which have more than 5 mol% excess addition a new phase with W-rich composition was formed at grain boundary.

• Journal of Ceramic Processing Research
• /
• v.19 no.5
• /
• pp.434-438
• /
• 2018

The sintering behavior of $BaFe_{12}O_{19}$ with the addition of one and three weight % of $CuWO_4$ as a liquid phase sintering aid is studied. Samples are sintered in the temperature range $900-1250^{\circ}C$ and the effect of $CuWO_4$ addition on density, microstructure, phase composition and magnetic properties is examined. Compared to $BaFe_{12}O_{19}$ with no sintering aid addition, addition of 1 wt % $CuWO_4$ retards densification. Addition of 3 wt % $CuWO_4$ promotes densification at lower sintering temperatures but retards densification at temperatures > $1050^{\circ}C$. Three wt % $CuWO_4$ addition induces the formation of $BaWO_4$ and $Ba_3WFe_2O_9$ secondary phases at temperatures ${\geq}1100^{\circ}C$. Addition of $CuWO_4$ causes a decrease in saturation magnetization, remanent magnetization and coercivity.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
• /
• v.15 no.9
• /
• pp.794-797
• /
• 2002

Piezoelectric properties of PZT-PSN ceramics were investigated as a function of WO$_3$ addition from 0 wt% to 6.0 wt%. The dielectric and piezoelectric characteristics of PZT-PSN ceramics have been investigated at different calcination (80$0^{\circ}C$~90$0^{\circ}C$) and sintering (110$0^{\circ}C$~130$0^{\circ}C$) temperatures. The grain size was increased with the addition of WO$_3$and the sintering temperatures. Anisotropic properties of electromechanical coupling coefficient and piezoelectric coefficient are proven to be dependent on processing temperatures and amount of addition. At the specimen with 0.6 wt% WO$_3$ addition, using calcination temperature of 80$0^{\circ}C$ and sintering temperature of 110$0^{\circ}C$ , mechanical quality factor(Q$_{m}$) and electromechanical coupling coefficient(k$_{p}$) showed the excellent results of 1560 and 0.48, respectively Experimental results indicated that the PZT-PSN system ceramics with WO$_3$impurity could be effectively used for the microtransformer and actuator applications, etc.etc.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
• /
• v.20 no.2
• /
• pp.130-134
• /
• 2007

In this study, in order to. develop the low temperature sintering ceramics for multilayer piezoelectric actuator, PMN-PNN-PZT ceramics using CuO, $Bi_{2}O_{3}\;and\;Li_{2}CO_{3}$ as sintering aids were manufactured with the amount of $WO_{3}$ addition. The ceramics were sintered at $900,\;930,\;960^{\circ}C$, respectively. Thereafter, their microstructural, dielectric and piezoelectric properties were investigated. The $WO_{3}$ was proved to lower the sintering temperature of piezoelectric ceramics due to the effects of PbO and $WO_{3}$ liquid phase. At 0.3 wt% $WO_{3}$ added specimen sintered at $930^{\circ}C$, electromechanical coupling factor($k_{p}$), mechanical quality factor($Q_{m}$), dielectric constant and $d_{33}$ showed the optimum values as the values of 0.60, 1,402, 1,440 and 360 pC/N, respectively, for multilayer piezoelectric actuator application.

• Proceedings of the KIEE Conference
• /
• 2006.10a
• /
• pp.61-62
• /
• 2006

In this study, in order to develop the low temperature sintering ceramics for multilayer piezoelectric actuator, PMN-PNN-PZT ceramics using ${Fe_2}{O_3}$ and $WO_3$ as sintering aids were manufactured with the amount of $WO_3$ addition, and the specimens were sintered at 900, 930, $960^{\circ}C$, respectively. Thereafter, their dielectric and piezoelectric properties were investigated. The sintering aids were proved to lower the sintering temperature of piezoelectric ceramics due to the effects of ${Fe_2}{O_3}$ and $WO_3$ liquid phase. At 0.3wt% $WO_3$ added specimen sintered at $930^{\circ}C$, kp, Qm, dielectric constant and $d_{33}$ showed the optimum values of 0.60, 1402, 1440 and 360[pC/N], respectively, for multilayer piezoelectric actuator application.

• Korean Journal of Materials Research
• /
• v.15 no.7
• /
• pp.486-490
• /
• 2005

Thin films of tungsten oxide and nickel oxide were deposited on $Al_2O_3/Si-substrate$ by high vacuum thermal evaporation. The properties of microstructure and crystallinity were analyzed by SEM and XRD respectively. $WO_3$ films without addition of NiO showed polycrystalline structure after annealing at $500^{\circ}C$ for SO min. There were the cracks between the polycrystalline grains and the crack width was increased with the thickness of $WO_3$ films. The cracks in the $WO_3$ films could be controlled by an optimum deposition of NiO on $WO_3$ films and either less or more than the optimum addition fails to suppress the cracks. A process mechanism to suppress the crack has been discussed.

• Journal of the Korean Crystal Growth and Crystal Technology
• /
• v.24 no.5
• /
• pp.213-218
• /
• 2014

An investigation of the influence of $WO_3$ addition with different precursors and preparation methods on the phase formation and selective catalytic reduction (SCR) efficiency of anatase-$TiO_2$ powders has been carried out. An anatase-$TiO_2$ synthesized by precipitation process was used as a catalyst support. For $WO_3(10wt%)/TiO_2$, the W loading to the $TiO_2$ support led to the lower in anatase to rutile transition temperature to ${\sim}900^{\circ}C$ from $1200^{\circ}C$ of the $TiO_2$ support alone. In the case of $WO_3(10wt%)/TiO_2$ SCR powders obtained from a wet process with ammonium meta-tungstate (AMT) precursor, the highest $NO_X$ conversion efficiency was achieved at $450^{\circ}C$ remaining high efficiency at $500^{\circ}C$, while the same composition prepared from a dry process with $WO_3$ addition showed the lowered efficiency with temperature after reaching the efficiency maximum at $350^{\circ}C$. The same tendency has been found that the $V_2O_5(5wt%)-WO_3(10wt%)/TiO_2$ SCR powders obtained from the wet process with AMT precursor has shown the superior $NO_X$ conversion efficiency over 90 % in a wider temperature range of $300{\sim}500^{\circ}C$.

• Journal of Sensor Science and Technology
• /
• v.15 no.2
• /
• pp.120-126
• /
• 2006

Physicochemical and electrical properties for hydrogen gas sensors based on Pd-deposited $WO_3$ thin films were investigated as a function of Pd thickness, annealing temperature, and operating temperature. $WO_3$ thin films were deposited on an insulating material by thermal evaporator. XRD, FE-SEM, AFM, and XPS were used to evaluate the crystal structure, microstructure, surface roughness, and chemical property, respectively. The deposited films were grown $WO_3$ polycrystalline with rhombohedral structure after annealing at $500^{\circ}C$. The addition effect of Pd is not the crystallinity but the suppression of grain growth of $WO_3$. Pd was scattered an isolated small spherical grain on $WO_3$ thin film after annealing at $500^{\circ}C$ and it was agglomerated as an irregular large grain or diffused into $WO_3$ after annealing at $600^{\circ}C$. 2 nm Pd-deposited $WO_3$ thin films operated at $250^{\circ}C$ showed good response and recovery property.