• Journal of the Korean Crystal Growth and Crystal Technology
• /
• v.10 no.3
• /
• pp.189-198
• /
• 2000

The stochiometric mixture of evaporating materials for the $CuGaSe_2$single crystal thin films were prepared from horizontal furnace. Using extrapolation method of X-ray diffraction patterns for the polycrystal $CuGaSe_2$, it was found tetragonal structure whose lattice constant $a_0}$ and $c_0$ were 5.615 $\AA$ and 11.025 $\AA$, respectively. To obtains the single crystal thin films, $CuGaSe_2$mixed crystal was deposited on throughly etched GaAs(100) by the Hot Wall Epitaxy (HWE) system. The source and substrate temperature were $610^{\circ}C$ and $450^{\circ}C$ respectively, and the growth rate of the single crystal thin films was about 0.5$\mu\textrm{m}$/h. The crystalline structure of single crystal thin films was investigated by the double crystal X-ray diffraction (DCXD). Hall effect on this sample was measured by the method of van der Pauw and studied on carrier density and mobility depending on temperature. From Hall data, the mobility was likely to be decreased by pizoelectric scattering in the temperature range 30 K to 150 K and by polar optical scattering in the temperature range 150 K to 293 K. The optical energy gaps were found to be 1.68 eV for CuGaSe$_2$sing1e crystal thin films at room temperature. The temperature dependence of the photocurrent peak energy is well explained by the Varshni equation then the constants in the Varshni equation are given by $\alpha$ = $9.615{\times}10^{-4}$eV/K, and $\beta$ = 335 K. From the photocurrent spectra by illumination of polarized light of the $CuGaSe_2$single crystal thin films. We have found that values of spin orbit coupling $\Delta$So and crystal field splitting $\Delta$Cr was 0.0900 eV and 0.2498 eV, respectively. From the PL spectra at 20 K, the peaks corresponding to free bound excitons and D-A pair and a broad emission band due to SA is identified. The binding energy of the free excitons are determined to be 0.0626 eV and the dissipation energy of the acceptor-bound exciton and donor-bound exciton to be 0.0352 eV, 0.0932 eV, respectively.

• Electrical & Electronic Materials
• /
• v.3 no.2
• /
• pp.138-146
• /
• 1990

볼츠만 수송방정식에 관한 홀스타인의 식을 사용하여 온도는 273.deg.K, 상대전계의 세기가 1.leq.E/P..leq.30(V/cm Torr)인 때의 Na와 He 단일기체중을 통과하는 전자의 에너지분포함수와 수송계수를 계산하였다. 그리고 전자 이동속도의 결과치를 실험값과 비교하였으며 실험치와 계산치가 일치하도록 충돌단면적을 수정하여 계산에 적용하였다. 이러한 방법으로 Hesms 0.1[eV]-50[eV]까지 Na는 0.1[eV]-5[eV]까지의 에너지범위에서 결정된 운동량변환단면적의 값은 제한된 범위에서 Crompton 및 Nakamura의 값과 거의 일치하였다. 또한 이와 같이하여 계산된 Na와 He 단일기체의 충돌단면적을 이용하여 온도는 273.degK, 상대전계의 세기는 1.leq.E/P$_{o}$ .leq.30(V/cm Torr)의 범위에서 Na-He 혼합증기의 혼합비율을 He:Na는 99.5:0.5, 99:1, 9:1. 1:1로 변화시켜 특성에너지, 평균에너지, 전자이동속도, 전자에너지 분포함수를 게산하였다.

• Journal of the Korean Mathematical Society
• /
• v.48 no.1
• /
• pp.105-115
• /
• 2011

Let f be a function which assigns a positive integer f(v) to each vertex v $\in$ V (G), let r, s and t be non-negative integers. An f-coloring of G is an edge-coloring of G such that each vertex v $\in$ V (G) has at most f(v) incident edges colored with the same color. The minimum number of colors needed to f-color G is called the f-chromatic index of G and denoted by ${\chi}'_f$(G). An [r, s, t; f]-coloring of a graph G is a mapping c from V(G) $\bigcup$ E(G) to the color set C = {0, 1, $\ldots$; k - 1} such that |c($v_i$) - c($v_j$ )| $\geq$ r for every two adjacent vertices $v_i$ and $v_j$, |c($e_i$ - c($e_j$)| $\geq$ s and ${\alpha}(v_i)$ $\leq$ f($v_i$) for all $v_i$ $\in$ V (G), ${\alpha}$ $\in$ C where ${\alpha}(v_i)$ denotes the number of ${\alpha}$-edges incident with the vertex $v_i$ and $e_i$, $e_j$ are edges which are incident with $v_i$ but colored with different colors, |c($e_i$)-c($v_j$)| $\geq$ t for all pairs of incident vertices and edges. The minimum k such that G has an [r, s, t; f]-coloring with k colors is defined as the [r, s, t; f]-chromatic number and denoted by ${\chi}_{r,s,t;f}$ (G). In this paper, we present some general bounds for [r, s, t; f]-coloring firstly. After that, we obtain some important properties under the restriction min{r, s, t} = 0 or min{r, s, t} = 1. Finally, we present some problems for further research.

• Journal of Korean Ophthalmic Optics Society
• /
• v.4 no.2
• /
• pp.141-146
• /
• 1999

We measured and analyzed thermoluminescence spectra of $LaAlO_3$, single crystal by 3 dimensional data for temperature, wavelength and luminescence intensity. $LaAlO_3$, has used as the substrates of YBCO(superconductor) or semiconductors. We could determined the energy of recombination center, that is impossible through analysis of glow curve data. We could obtained the energy through analysis of the spectrum data at peak temperature by Franck-Condon model. The total glow curve was deconvoluted to three glow curves by curve fitting method. The activation energies were 0.54eV, 0.91eV and 1.02eV respectively. The energies of recombination centers were determined with 2.04eV and 2.75eV from the analysis of luminescence intensity data for wavelength.

• Journal of the Korean Crystal Growth and Crystal Technology
• /
• v.4 no.1
• /
• pp.83-91
• /
• 1994

We have constructed a vertical gradient freeze (VGF) grower for GaAs single crystals 2 inch in diameter and have grown semi-insulating GaAs co-doped with Cr and In. For the co-doped crystal, the segregation coefficients of the dopants remain unchanged when compared to those doped with only Cr or In. The concentration of Cr and in atoms range from about $2{\Times}10_{16} to 3{imes}10^{17} cm^{-3}$ and $2{\Times}10^{19} to 3{\Times}10^{20} cm^{-3}$ at the seed to the tail part of the grown crystal, respectively. The averaged dislocation etch pit density is found to be less than $8000 cm^{-2}$ throughout the ingot. It is also found that there is some evidence of lattice hardening for the crystal in which the dislocation density is decreased to less than $1000 cm^{-2}$ as In concentration increases. The resistivity increases abruptly from $10^{-2}$ up to $10^8$ Ohm-cm, while the carrier concentration decreases from $10^{16}$ to $10^8 cm^{-3}$ along the growth direction of the GaAs crystal. Semi-insulating properties can be obtained above a critical concentration of Cr of about $6{\Times}10{^16} cm^{-3}$ in the crystal. The main deep levels existing in the GaAs: Cr,In sample are two electron traps at $E_C-0.81eV, E_C-0.35eV$, and two hole traps at $E_V+0.89eV, E_V+0.65eV$.

• Electrical & Electronic Materials
• /
• v.10 no.8
• /
• pp.800-806
• /
• 1997

The behavior of de levels in rapid thermal annealed Fe-doped semi-insulating InP(100) was studied by photoinduced current transient spectrocopy(PICTS). In bulk InP, T2(Ec-0.24 eV), T3(Ec-0.30 eV) and T5(Ec-0.62 eV) traps were observed. After annealing the T2 trap was annihilated at 20$0^{\circ}C$ and recreated at 35$0^{\circ}C$. T3 trap was not affected below 40$0^{\circ}C$. With increasing temperature the concentration of T5 trap reduced and it was annihilated at 30$0^{\circ}C$. However the T1(Ec-0.16 eV) and T4(Ec-0.42 eV) traps were began to appear at 40$0^{\circ}C$and these concentrations were increased with annealing temperature. The T1 and T4 traps seem to be related to the isolated phosphorus vacancy( $V_{p}$) and $V_{p}$-indium antisite( $V_{p}$- $P_{in}$ ) or $V_{p}$-indium interstitial( $V_{p}$-I $n_{I}$) respectiely.respectiely.

• Journal of the Korean Crystal Growth and Crystal Technology
• /
• v.8 no.2
• /
• pp.211-220
• /
• 1998

The stochiometric composition of $AgGaS_2$polycrystal source materials for the single crystal thin films were prepared from horizontal furnace. From the extrapolation method of X-ray diffraction patterns, it was found that the polycrystal $AgGaS_2$has tetragonal structure of which lattice constant $a_0\;and \;c_0$ were 5.756 $\AA$ and 10.305 $\AA$, respectively. $AgGaS_2$single crystal thin film was deposited on throughly etched GaAs(100) substrate from mixed crystal $AgGaS_2$by the Hot Wall Epitaxy (HWE) system. The source and substrate temperature were $590^{\circ}C$ and $440^{\circ}C$ respectively, and the growth rate of the single crystal thin films was about 0.5 $mu \textrm{m}$/h. The crystallinity of the grown single crystal thin films was investigated by the DCRC (double crystal X-ray diffraction rocking curve). The optical energy gaps were found to be 2.61 eV for $AgGaS_2$single crystal thin films at room temperature. The temperature dependence of the photocurrent peak energy is well explained by the Varshni equation, then the constants in the Varshni equation are given by${\Alpha};=;8.695{\times}10^{-4};eV/K,and;{\beta};=;332;K$. from the photocurrent spectra by illumination of polarized light of the $AgGaS_2$single crystal thin film, we have found that crystal field splitting $\Delta$Cr was 0.28 eV at 20 K. From the PL spectra at 20 K, the peaks corresponding to free and bound excitons and a broad emission band due to D-A pairs are identified. The binding energy of the free excitons are determined to be 0.2676 eV and 0.2430 eV and the dissociation energy of the bound excitons to be 0.4695 eV.

• Bulletin of the Korean Mathematical Society
• /
• v.49 no.3
• /
• pp.465-479
• /
• 2012

For $0<p{\leq}{\infty}$ and a convex body $K$ in $\mathbb{R}^n$, Lutwak, Yang and Zhang defined the concept of dual $L_p$-centroid body ${\Gamma}_{-p}K$ and $L_p$-John ellipsoid $E_pK$. In this paper, we prove the following two results: (i) For any origin-symmetric convex body $K$, there exist an ellipsoid $E$ and a parallelotope $P$ such that for $1{\leq}p{\leq}2$ and $0<q{\leq}{\infty}$, $E_qE{\supseteq}{\Gamma}_{-p}K{\supseteq}(nc_{n-2,p})^{-\frac{1}{p}}E_qP$ and $V(E)=V(K)=V(P)$; For $2{\leq}p{\leq}{\infty}$ and $0<q{\leq}{\infty}$, $2^{-1}{\omega_n}^{\frac{1}{n}}E_qE{\subseteq}{\Gamma}_{-p}K{\subseteq}{2\omega_n}^{-\frac{1}{n}}(nc_{n-2,p})^{-\frac{1}{p}}E_qP$ and $V(E)=V(K)=V(P)$. (ii) For any convex body $K$ whose John point is at the origin, there exists a simplex $T$ such that for $1{\leq}p{\leq}{\infty}$ and $0<q{\leq}{\infty}$, ${\alpha}n(nc_{n-2,p})^{-\frac{1}{p}}E_qT{\supseteq}{\Gamma}_{-p}K{\supseteq}(nc_{n-2,p})^{-\frac{1}{p}}E_qT$ and $V(K)=V(T)$.

• KSBB Journal
• /
• v.28 no.1
• /
• pp.54-59
• /
• 2013

Three isolates, E. faecium P1, P2 and P3, from intestinal drugs of three phamaceutical companies, four clinical vancomycin resistant isolates, E. faecium V1, V2, V3 and E. faecalis V4, and three isolates, E. faecalis DW01, DW07 and DW14, from infant feces were tested for the presence of virulence genes, ace, agg, esp, efaA, gelE, sprE, vanA and vanB as well as fsrABC, regulatory genes of gelE and sprE, cylMBA, cytolysin activation genes and cpd, cob and ccf, pheromone genes by PCR and for their phenotype activities such as protease, biofilm formation, cell clumping and hemolysis. The genes encoding cell surface adherence proteins, ace, agg, esp and efaA, were predominantly amplified from the vancomycin resistant strain V4 and the fecal isolates DW01, DW07 and DW14. Both protease and biofilm formation activity were detected only from E. faecalis V4 from which the PCR products of gelE and spreE as well as fsrABC were amplified. The pheromone genes were amplified from the V4, DW01, DW07 and DW14 strains and these strains showed clumping activity. Biofilm formation was observed from the strains DW01, DW07 and DW14, all of which produced PCR products of pheromone, and V4 as well. Whole cytolysin regulator genes were amplified from DW01, DW07 and DW14 and ${\beta}$-hemolysis activity was detected from these strains. Any virulence genes or activities except the pheomone gene ccf were not detected from the pharmaceutical isolates, E. faecium P1, P2 and P3.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
• /
• v.20 no.3
• /
• pp.207-212
• /
• 2007

The concentration profiles of deep energy levels($E_c$ -0.23e V, $E_v$+0.36e V and $E_c$ -0.23e V) in platinum-diffused silicon have generally a sharp gradient in the vicinity of the surface of the silicon wafer. In this work two efficient methods are proposed to obtain the uniform concentration profiles throughout the silicon wafer. One is that the platinum diffusion is carried out at $1000^{\circ}C$ for 1h in oxygen atmosphere. In this case the values of obtained uniform concentration, $1{\times}10^{15}cm^{-3}$ for the $E_c$ -0.23e V level, and 1{\times}10^{14}cm^{-3}$ for the $E_c$ -0.52e V level, are very restricted, respectively. The other is two-step annealing process. The platinum diffusion is carried out at $850{\sim}1100^{\circ}C$ in a nitrogen ambient for 1h and then the annealing is performed at $1000^{\circ}C$ in oxygen ambient after removing platinum-source from the platinum diffused samples. The advantage of this method is that the uniform concentration of these levels required power devices can be controlled by setting the desired temperatures when the platinum diffusion is carried out in nitrogen ambient.