• 한국전자거래학회지
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• 제6권3호
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• pp.115-126
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• 2001

In constructive view, acquiring knowledge is made by experiences among members or elements. The knowledge in e-learning system can be extended up to knowledge of teachers and knowledge. of operating managers. We have many difficult problems to develop and manage e-1earning system because demanders on e-learning system have various. requirements. In traditional education system demanders are learners but in constructive view demanders can be extended to learners and teachers, operating mangers on e-learning system., In this study, we design and implement e-learning system named kedu V.1. Kedu V.1 is developed considering interactions of extended demanders of e-learning system in constructive view. And this system based on Linux operation system and MySQL, PHP. Also this system have efficient transplantation and portability capabilities and reduced cost and labor in implementation of real e-learning system

• Journal of Electrical Engineering and Technology
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• 제13권1호
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• pp.220-225
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• 2018

A class E power oscillator is demonstrated for 6.78-MHz wireless power transfer system. The oscillator is designed with a class E power amplifier to use an LC feedback network with a high-Q inductor between the input and the output. Multiple capacitors are used to minimize the variation of the oscillation frequency by capacitance tolerance. The gate and drain bias voltages with opposite characteristics to make the frequency shift of the oscillator are connected in a resistance distribution circuit located at the output of the low drop-out regulator and supplied bias voltages for class E operation. The measured output of the class E power oscillator, realized using the co-simulation, shows 9.2 W transmitted power, 6.98 MHz frequency and 86.5% transmission efficiency at the condition with 20 V $V_{DS}$ and 2.4 V $V_{GS}$.

• 센서학회지
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• 제32권4호
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• pp.238-245
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• 2023

0.75(Bi_1/2Na_1/2)TiO₃-0.25SrTiO₃ (BNT-25ST) ceramics with high densities were successfully prepared at a sintering temperature of 1,000℃ by adding a mixture of 1 mol% CuO and 0.5 mol% Na₂CO₃ or 0.5 mol% CuO and 0.25 mol% Na₂CO₃. Double polarization-electric field (P-E) hysteresis curves and sprout-shaped bipolar strain-electric field (S-E) hysteresis curves with small negative strains were observed in the pristine and CuO-added BNT-25ST ceramics whereas the Na₂CO₃-added sample showed similar P-E and S-E curves to a typical ferroelectric. The pristine BNT-25ST ceramics showed an extremely large strain and a large-signal piezoelectric strain constant (d₃₃^*): 0.287 % at 80 kV/cm and 850 pm/V at 20 kV/cm. Similar values, 0.248 % at 80 kV/cm and 655 pm/V at 20 kV/cm, were obtained in the CuO-added sample. However, the pristine and CuO-added samples showed large hysteresis in unipolar S-E curves at an electric field of less than 20 kV/cm. The Na₂CO₃-added sample showed smaller values of the strain and d₃₃^* but displayed a linear change and small hysteresis in the unipolar S-E curve. The co-added sample with CuO and Na₂CO₃ displayed intermediate P-E and S-E hysteresis curves.

• 한국방사선학회논문지
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• 제14권5호
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• pp.669-676
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• 2020

본 연구의 목적은 Spectral CT에서 단색에너지(keV)와 조영제 희석비율의 변화에 따른 HU 값의 변화를 분석하고자 하였다. 검사장비로는 Spectral CT를 사용하였고, 20 cc syringe의 팬텀을 이용하여 조영제의 희석비율을 8:2, 7:3, 6:4, 5:5, 4:6, 3:7 총 6단계로 설정하였다. 이때 조영제는 비이온성 요오드 조영제(350 mg/ml)를 이용하였다. 획득한 데이터를 IQon-Spectral CT V4.7.5 프로그램을 사용하여 Monoenergy(MonoE) 40 keV, 45 keV, 50 keV, 55 keV, 60 keV, 65 keV, 70 keV, 75 keV, 80 keV 총 9단계로 변화시켜 syringe axial 영상을 재구성하였다. 재구성한 syringe axial 단면 영상의 세 위치에서 HU 값을 측정하였으며, 총 1,620회 측정하였다. keV와 조영제 희석비율의 변화에 따른 HU 값을 분석한 결과, MonoE별 희석비율에 따른 HU 비교에서 모든 MonoE에서의 HU 값이 희석비율 8:2에서 가장 높았으며 3:7에서 가장 낮았다(p<0.05). 희석비율별 MonoE에 따른 HU 비교에서 모든 희석비율에서의 HU 값이 40 keV에서 가장 높았으며 80 keV에서 가장 낮았다(p<0.05). 인자별 상관성은 keV에 따른 HU 값은 -15.014 ± 0.298의 음의 상관성(R²=0.519)이 있었고 희석비율에 따른 HU값 은 -61.372 ± 3.608의 음의 상관성(R²=0.152)이 있었다(p<0.05). 결론적으로 keV 값과 조영제 희석비율이 증가할수록 HU 값은 감소하는 것을 확인하였으며 본 연구가 Spectral CT의 HU 값 관련 인자 연구에 있어 기초자료를 제공할 수 있을 것이라 사료된다.

• 한국전자거래학회:학술대회논문집
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• 한국전자거래학회 2002년도 e-Biz World Conference
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• pp.287-292
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• 2002

ebXML BizServer - ebXML MSH v1.0 - ebXML CPP/CPA Builder v1.0 ebXML RegRep - ebXML Registry v1.0 ebXML BP - ebXML BP Modeller v1.0(omitted)

• 한국재료학회지
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• 제12권6호
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• pp.431-435
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• 2002

The dark current and photocurrent(PC) spectrum of Mg-doped GaN thin film were investigated with various bias voltages and temperatures. At high temperature and small bias, the dark current is dominated by holes thermally activated from an acceptor level Al located at about 0.16 eV above the valence band maximum $(E_v)$, The PC peak originates from the electron transition from deep level A2 located at about 0.34 eV above the $E_v$ to the conduction band minimum $(E_ C)$. However, at a large bias voltage, holes thermally activated from A2 to Al experience the field-in-duces tunneling to form one-dimensional defect band at Al, which determines the dark current. The PC peak associated with the transition from Al to $E_ C$ is also observed at large bias voltages owing to the extended recombination lifetime of holes by the tunneling. In the near infrared region, a strong PC peak at 1.20 eV appears due to the hole transition from deep donor/acceptor level to the valence band.

• 한국전기전자재료학회논문지
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• 제26권2호
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• pp.83-86
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• 2013

The optical properties of ZnO thin film have been studied using photoluminescence(PL) spectroscopy with the change of sample temperatures from 10 K to 290 K. The spectrum at 10 K showed the characteristic emission lines of ZnO which were as follows: free exciton(FX) at 3.369 eV, neutral donor-bound exciton($D^0X$) at 3.360 eV, two electron satellite(TES) at 3.332 eV, $D^0X$-1LO at 3.289 eV, and donor-acceptor pair(DAP) transiton at 3.217 eV. From the spectral evolution with temperatures, two features could be identified as temperature went higher: (1) the bound excitons changed gradually into free excitons, (2) DAP turned into free electron-acceptor transition(e,$A^0$). The PL intensity of free exciton increased with the increase of temperatures, which was accompanied by the decrease of the intensity of bound excitions and bound excition-related transitons such as TES and $D^0X$-1LO. At 80 K DAP transition disappeared, while (e,$A^0$) transition started to appear at 30 K.

• 대한설비공학회:학술대회논문집
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• 대한설비공학회 2009년도 하계학술발표대회 논문집
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• pp.284-292
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• 2009

The stack-effect in high-rise buildings in winter causes many problems such as difficulties in opening or closing doors, infiltration, energy loss, noise and fire protection. Stack effect is influenced by temperature difference between the interior and exterior of building and the height of building. As an attenuation method for stack effect, the architectural methods are generally used. However, as though architectural methods were fully adopted, the problems are reported as ever in tall building. In this study, a new method to reduce stack effect will be suggested. As an active control method against the stack effect, E/V shaft natural cooling method is suggested. In this paper, the concept of E/V shaft natural cooling system and its reduction performance of stack effect by simulation and field measurement will be reported.

• 한국정보전자통신기술학회논문지
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• 제12권3호
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• pp.312-320
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• 2019

본 논문에서는 110nm eFlash 셀을 사용한 512Kb eFlash IP를 설계하였다. eFlash 셀의 프로그램, 지우기와 읽기 동작을 만족시키는 row 구동회로(CG/SL 구동회로), write BL 구동회로( write BL 스위치 회로와 PBL 스위치 선택 회로), read BL 스위치 회로와 read BL S/A 회로와 같은 eFlash 코어회로(Core circuit)를 제안하였다. 그리고 프로그램 모드에서 9.5V와 erase 모드에서 11.5V의 VPP(Boosted Voltage) 전압을 공급하는 VPP 전압 발생기회로는 기존의 단위 전하펌프 회로로 cross-coupled NMOS 트랜지스터를 사용하는 대신 body 전압을 ground에 연결된 12V NMOS 소자인 NMOS 프리차징 트랜지스터의 게이트 노드 전압을 부스팅하는 회로를 새롭게 제안하여 VPP 단위 전하펌프의 프리차징 노드를 정상적으로 VIN(Input Voltage) 전압으로 프리차징 시켜서 VPP 전하펌프 회로의 펌핑 전류를 증가시켰다. 펌핑 커패시터로는 PMOS 펌핑 커패시터에 비해 펌핑전류가 크고 레이아웃 면적이 작은 12V native NMOS 펌핑 커패시터를 사용하였다. 한편 110nm eFlash 공정을 기반으로 설계된 512Kb eFlash 메모리 IP의 레이아웃 면적은 $933.22{\mu}m{\times}925{\mu}m(=0.8632mm^2)$이다.

• 대한기계학회논문집
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• 제19권1호
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• pp.87-98
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• 1995

When the crack in orthotropic material is propagating under dynamic model I load, influences of anisotropic property ratio $E_{L}$/ $E_{T}$ on stress and displacement around propagating crack tip are studied in this paper. When M<0.55 and .alpha.=90.deg.(.alpha.; the angle of fiber direction with crack propagating direction, M; crack propagation velocity/shear stress wave velocity), the influence of $E_{L}$/ $E_{T}$ on stress .sigma.$_{x}$, .sigma.$_{y}$, .tau.$_{xy}$ and .sigma.$_{\theta}$ is the greast on .sigma.$_{y}$. Except M<0.55 and .alpha.=90.deg., it is the greast on .sigma.$_{x}$ in any situation. Increasing $E_{L}$/ $E_{T}$, stress components are increased or decreased. When maximum stress is based, the stress .sigma.$_{x}$(.alpha.=90.deg.), .sigma.$_{y}$(.alpha.=0.deg.) and .tau.$_{xy}$ (.alpha.=90.deg.) are decreased with increment of $E_{L}$/ $E_{T}$ in M=0. any stresses except .sigma.$_{*}$x/(.alpha.=0.deg.) are decreased with increment of $E_{L}$/ $E_{T}$ in M=0.9. When .alpha.=90.deg., the influence of $E_{L}$/ $E_{T}$ on displacement U and V is V>U in any velocities of crack propagation, when .alpha.=0.deg., it is VU in M>0.75 and when $E_{L}$/ $E_{T}$ is increased, U and V are decreased in any conditions.sed in any conditions.tions.tions.tions.