• Journal of Sensor Science and Technology
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• v.12 no.1
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• pp.16-23
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• 2003

Thermoluminescent properties of $Li_2B_4O_7$ single crystal grown by Czochralski method have been investigated. The high quality $Li_2B_4O_7$ single crystal without core was obtained at rotation speed of 10 rpm for seed crystal and pulling speed below $0.18\;mm{\cdot}h^{-1}$. The structure of $Li_2B_4O_7$ single crystal was classified as tetragonal by XRD analysis. The TL glow curve was composed with three overlapped peaks which can be easily deconvoluted and the TL response of $Li_2B_4O_7$ single crystal TLD to X-ray radiation is linear within the range of $50\;mGy{\sim}1.5\;Gy$. Activation energies of three TL glow peaks analyzed by the various heating rates method and PL spectrum were 0.93, 1.78 and 2.25 eV, respectively.

• Journal of the Korean Vacuum Society
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• v.16 no.1
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• pp.27-32
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• 2007

We have investigated photoluminescence(PL) spectra of four $In_xGa_{1-x}N(x=0.15)/GaN$ multiple quantum well(MQW) structures with different well widths in order to study a phenomenon on crystal phase separation. The asymmetic behavior of PL spectra becomes stronger with increase of the well width from 1.5 nm to 6.0 nm, which indicates dual-peak nature. Analyzing the dual-peak fit PL spectra, we have observed that the intensity of low-energy shoulder peak rapidly becomes stronger, compared to that of high-energy peak corresponding to a transition in InGaN QW. It suggests that InGaN QW has two phases with tiny different In compositions, and that In-rich(InN-like) phase forms more and more relatively than stoichiometric InGaN(x=0.15) phase by the InN phase separation mechanism as the QW width increases. PL spectrum of 6.0-nm sample shows an additional peak at low-energy lesion(${\sim}2.0\;eV$) whose energy position is almost the same as a defect band of yellow luminescence frequently observed in GaN epilayers. It may be due to a defect resulted from In deficiency formed with development of the phase separation.

• Proceedings of the Korean Vacuum Society Conference
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• 2013.02a
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• pp.345-346
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• 2013

InGaN material is being studied increasingly as a prospective material for solar cells. One of the merits for solar cell applications is that the band gap energy can be engineered from 0.7 eV for InN to 3.4 eV for GaN by varying of indium composition, which covers almost of solar spectrum from UV to IR. It is essential for better cell efficiency to improve not only the crystalline quality of the epitaxial layers but also fabrication of the solar cells. Fabrication includes transparent top electrodes and surface texturing which will improve the carrier extraction. Surface texturing is one of the most employed methods to enhance the extraction efficiency in LED fabrication and can be formed on a p-GaN surface, on an N-face of GaN, and even on an indium tin oxide (ITO) layer. Surface texturing method has also been adopted in InGaN-based solar cells and proved to enhance the efficiency. Since the texturing by direct etching of p-GaN, however, was known to induce the damage and result in degraded electrical properties, texturing has been studied widely on ITO layers. However, it is important to optimize the ITO thickness in Solar Cells applications since the reflectance is fluctuated by ITO thickness variation resulting in reduced light extraction at target wavelength. ITO texturing made by wet etching or dry etching was also revealed to increased series resistance in ITO film. In this work, we report a new way of texturing by deposition of thickness-optimized ITO films on ITO nano dots, which can further reduce the reflectance as well as electrical degradation originated from the ITO etching process.

• Journal of the Earthquake Engineering Society of Korea
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• v.11 no.1 s.53
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• pp.67-77
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• 2007

Site coefficients in IBC and KBC codes have some limits to predict the rational seismic responses of a structure, because they take into account only the effect of the soil amplification without the effects of the structure-soil interaction. In this study, upper and lower limits of the site coefficients are estimated through the pseudo 3-D elastic seismic response analyses of structures built on the linear or nonlinear soil layers taking Into account the effects of the structure-soil interaction. Soil characteristics of site classes of A, B and C were assumed to be linear, and those of site classes of D and E were done to be nonlinear and the Ramberg-Osgood model was used to evaluate shear modulus and damping ratio of a soil layer depending on the shear wave velocity of the soil layer, Seismic analyses were performed with 12 weak or moderate earthquake records scaled the peak acceleration to 0.1g or 0.2g and deconvoluted as earthquake records at the bedrock located at 30m deep under the outcrop. With the study results of the elastic seismic response analyses of structures, new standard response spectrum and upper and lower limits of the site coefficients of $F_{a}\;and\;F_{v}$ at the short period range and the period of 1 second are suggested including the effects of the structure-soil interaction, and new site coefficients for the KBC code are also suggested.

• Journal of the Korean Chemical Society
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• v.24 no.1
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• pp.44-52
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• 1980

Ionic dissociation rates of $\alpha$-chlorobenzyl ethyl ether in each solvent of toluene-$d_8$ and carbon tetrachloride were measured by the method of dynamic NMR spectroscopy. The spin system of these 1H NMR spectra was $AB_3$. The theoretical spectrum was calculated by computer simulation of dynamic NMR spectra, which agreed very well with observed spectra. From this computer simulation, the ionic dissociation rate constant k was obtained, and by Eyring plot with it, slope and intercept length was gained, from which kinetic parameters were calculated.The easiness of ionic dissociation depended upon solvent polarity. Activation enthalpy was 4.7 kcal/mole in toluene-$d_8$, 10.7 kcal/mole in carbon tetrachloride, and activation entropy was -35. 8 e.u. in toluene-$d_8$, -14.4 e.u. in carbon tetrachloride. It was understood that though the ${\Delta}H^{neq}$ value was small, this ionic dissociation had an easier procession in nonpolar solvents with increasing temperatures. Considering that the ionic dissociation could be thought as the first step of $S_N1$ mechanism, attention might be paid to the results that the value of ${\Delta}S^{neq}$ had a large negative value in comparison with a small ${\Delta}H^{neq}$.

• Journal of the Korean Vacuum Society
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• v.15 no.6
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• pp.581-586
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• 2006

We have generated the argon plasma in the diode chamber based on the established coaxial electrode type and investigated the emitted visible light for emission spectroscopy. We applied various voltages $2\sim3.5kV$ to the device by 0.5kV, and obtained the emission spectrum data for the focused plasma in the diode chamber on the argon pressure of 330 mTorr. The Ar I and Ar II emission line are observed. The electron temperature and ion density have been measured by the Boltzmann plot and Saha equation from assumption of local thermodynamic equilibrium (LTE) The Ar I and Ar II ion densities have been calculated to be $\sim10^{15}/cc\;and\;~10^{13}/cc$, respectively, from Saha equation.

• The Proceedings of the Korean Institute of Illuminating and Electrical Installation Engineers
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• v.10 no.6
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• pp.62-72
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• 1996

In this paper, ozonizer using U-type lamp(Olamp) has been designed and manufactured, which can perform a role of lighting source and ozonizer by using photo and chemical methods. The discharge, spectrum, illuminance, ozone concentration, ozone generation, ozone yield and sterilization characteristics of Olamp have been studied. The important conclusions obtained from this paper can be summa'||'&'||'not;rized as follows. As a result of spectrum characteristics for Olamp, ultraviolet ray of a short wave'||'&'||'not;lengths and a visible ray are radiated. The illuminance of Olamp was found to be useful for "color distinctive and intermittent works in the dark working spaces" in accordance with KS A 3011. The ozone concentration of gaseous phase is inversely proportional to quality of supplied gas. Also, ozone conce tration and generation of gaseous phase are rised more commercial oxygen gas than those trial air gas for constant quality of supplied gas. Ozone generation and ozone yield of gaseous phase are proportion'||'&'||'not;al to ozone concentration of gaseous phase. The characteristics of liquid ozone concentration at distilled water are proportional to circulating velocity of fermentation chamber and ozone concentration of gas'||'&'||'not;eous phase. As a result, the sterilization characteristics of Escherichia coli have been obtained more than 97[ % J.

• Journal of Radiation Protection and Research
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• v.44 no.2
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• pp.64-71
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• 2019

Background: It is very difficult to distinguish between a radioactive contamination source and background radiation from natural radionuclides in the marine environment by means of online monitoring system. The objective of this study was to investigate a statistical process for triggering abnormal level of count rate data measured from our on-line seawater radioactivity monitoring. Materials and Methods: Count rate data sets in time series were collected from 9 monitoring posts. All of the count rate data were measured every 15 minutes from the region of interest (ROI) for $^{137}Cs$ ($E_{\gamma}=661.6keV$) on the gamma-ray energy spectrum. The Shewhart ($3{\sigma}$), CUSUM, and Bayesian S-R control chart methods were evaluated and the comparative analysis of determination methods for count rate data was carried out in terms of the false positive incidence rate. All statistical algorithms were developed using R Programming by the authors. Results and Discussion: The $3{\sigma}$, CUSUM, and S-R analyses resulted in the average false positive incidence rate of $0.164{\pm}0.047%$, $0.064{\pm}0.0367%$, and $0.030{\pm}0.018%$, respectively. The S-R method has a lower value than that of the $3{\sigma}$ and CUSUM method, because the Bayesian S-R method use the information to evaluate a posterior distribution, even though the CUSUM control chart accumulate information from recent data points. As the result of comparison between net count rate and gross count rate measured in time series all the year at a monitoring post using the $3{\sigma}$ control charts, the two methods resulted in the false positive incidence rate of 0.142% and 0.219%, respectively. Conclusion: Bayesian S-R and CUSUM control charts are better suited for on-line seawater radioactivity monitoring with an count rate data in time series than $3{\sigma}$ control chart. However, it requires a continuous increasing trend to differentiate between a false positive and actual radioactive contamination. For the determination of count rate, the net count method is better than the gross count method because of relatively a small variation in the data points.

• Progress in Superconductivity
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• v.14 no.2
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• pp.99-101
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• 2012

Fluorescent yield X-ray absorption fine structure (XAFS) spectroscopy is useful for analyzing local structure of specific elements in matrices. We developed an XAFS apparatus with a 100-pixel superconducting tunnel junction (STJ) detector array with a high sensitivity and a high resolution for light-element dopants in wide-gap semiconductors. An STJ detector has a pixel size of $100{\mu}m$ square, and an asymmetric layer structure of Nb(300 nm)-Al(70 nm)/AlOx/Al(70 nm)-Nb(50 nm). The 100-pixel STJ array has an effective area of $1mm^2$. The XAFS apparatus with the STJ array detector was installed in BL-11A of High Energy Accelerator Research Organization, Photon Factory (KEK PF). Fluorescent X-ray spectrum for boron nitride showed that the average energy resolution of the 100-pixels is 12 eV in full width half maximum for the N-K line, and The C-K and N-K lines are separated without peak tail overlap. We analyzed the N dopant atoms implanted into 4H-SiC substrates at a dose of 300 ppm in a 200 nm-thick surface layer. From a comparison between measured X-ray Absorption Near Edge Structure (XANES) spectra and ab initio FEFF calculations, it has been revealed that the N atoms substitute for the C site of the SiC lattice.

• Proceedings of the Materials Research Society of Korea Conference
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• 2011.10a
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• pp.27.1-27.1
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• 2011

The recent extensive research of one-dimensional (1D) nanostructures such as nanowires (NWs) and nanotubes (NTs) has been the driving force to fabricate new kinds of nanoscale devices in electronics, optics and bioengineering. We attempt to produce silicon oxide nanowires (SiOxNWs) in a simple way without complicate deposition process, gaseous Si containing precursors, or starting material of $SiO_2$. Nickel (Ni) nanoparticles (NPs) were applied on Si wafer and thermally treated in a furnace. The temperature in the furnace was kept in the ranges between 900 and $1,100^{\circ}C$ and a mixture of nitrogen ($N_2$) and hydrogen ($H_2$) flowed through the furnace. The SiOxNWs had widths ranging from 100 to 200 nm with length extending up to ~10 ${\mu}m$ and their structure was amorphous. Ni NPs were acted as catalysts. Since there were no other Si materials introduced into the furnace, the Si wafer was the only Si sources for the growth of SiOxNWs. When the Si wafer with deposition of Ni NPs was heated, the liquid Ni-Si alloy droplets were formed. The droplets as the nucleation sites induce an initiation of the growth of SiOxNWs and absorb oxygen easily. As the droplets became supersaturated, the SiOxNWs were grown, by the reaction between Si and O and continuously dissolving Si and O onto NPs. Photoluminescence (PL) showed that blue emission spectrum was centered at the wavelength of 450 nm (2.76 eV). The details of growth mechanism of SiOxNWs and the effect of Ni NPs on the formation of SiOxNWs will be presented.