• Journal of the Korean Chemical Society
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• v.39 no.1
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• pp.47-56
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• 1995

Tridentate Schiff base molybdenum(V) complexes such as [Mo(Ⅴ)2O(SOHB)4], [Mo(Ⅴ)2O3(SOIP)2(NCS)2] and [Mo(Ⅴ)2O3(SOTB)2(H20)2](SOHB: Salicylidene-o-imino hydroxybenzene, SOIP; Salicylidene-o-imino pyridine, SOTB; Salicylidene-o-imino thiolbenzene) were synthesized and identified by elemental analysis, spectroscopy, and thermogravimetric analysis (TGA). It was found that the mole ratio of Schiff base ligand to the metal in these complexes is 1 : 1 or 1 : 2. The redox processes of the complexes were investigated by cyclic voltammetric and differential pulse polarographic techniques in nonaquous solvent containing 0.1 M tetraethylammonium perchlorate (TEAP) as supporting electrolyte at glassy carbon electrode. It was found that diffusion controlled reduction processes with one electron were Mo(Ⅴ)Mo(Ⅴ)e-→ Mo(Ⅴ)Mo(Ⅳ)e-→Mo(Ⅳ)Mo(Ⅳ)e-→Mo(Ⅳ)Mo(Ⅲ).

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.7 no.3
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• pp.514-520
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• 1997

A single component of $Sb_2O_3$ glass has been obtained by a rapid quenching method in vacuum. The linear refractive indices were measured as a function of wavelength from 500 nm to 1060 nm. The refractive index at $n_{3{\omega}}$/(633 nm) was as high as 2.00. The optical band gap was estimated as 3.38 eV from the optical absorption spectrum. The third-order nonlinear optical intensity was determined by the third harmonic generation (THG) method. The $\chi^{(3)}$value was as high as $5.68{\times}10^{-13}$esu, about 20 times larger than that of $SiO_2$ glass.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.5 no.3
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• pp.240-249
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• 1995

Rutile type of $TiO_{2}$ single crystal was grown by floating zone method in order to obtain the highly transparent and contamination-free single crystal. The linear refractive index of perpendicular and parallel to c-axis was measured as a function o f wavelength from 500 to 1000nm. The optical energy band gap was estimated as 2.99 eV from the absorption spectrum. The theoretical $\chi^{(3)}$} value of $TiO_{2}$ was discussed in comparison with that of $SiO_{2}$ quartz single crystal on the basis of semiempirical model. On the other hand, the second-hyperpolarizability, ${\gamma}({Ti}^{4+})$ was calculated in order to describe the effect of $Ti_{4}$ ion on the third order nonlinear optical properties.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.04c
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• pp.58-61
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• 2008

$TiO_2$ is a wide band-gap semiconductor (3.4 eV) and can only absorb about 5% of sun light in the ultraviolet light region, which largely limits its practical applications because of the lower utility of sun light and quantum yield. In order to move the absorption edge of $TiO_2$ fims to visible spectrum range, we have made the impurity level within a band-gap of $TiO_2$ thin film by introduction of oxygen vacancy. Oxygen-defected $TiO_2$ thin film have prepared by reactive sputtering with the partial pressure of $Ar:O_2=10:90{\sim}99.33:0.66$ ratio. As a result, we could have the impurity level of about 2.75 eV on condition that oxygen partial pressure is below 7%.

• Proceedings of the KIEE Conference
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• 1999.11a
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• pp.10-12
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• 1999

Optical properties of $Zn_2AgGaSe_4$ and $Zn_2AgGaSe_4$:$Co^{2+}$ crystals are investigated in the visible and near-infrared regions at 298K. The direct band gap at 298K is 1.630eV for the $Zn_2AgGaSe_4$ and 1.567eV for the $Zn_2AgGaSe_4$:$Co^{2+}$ crystals, respectively. In the optical absorption and PAS spectrum of the $Zn_2AgGaSe_4$:$Co^{2+}$, we observed five impurity absorption peaks at $4220cm^{-1}$, $5952cm^{-1}$, $12422cm^{-1}$, $12987cm^{-1}$ and $14184cm^{-1}$. These impurity absorption peaks are attributed to the electronic transitions between the split energy levels of $Co^{2+}$ ions with Td symmetry of $Zn_2AgGaSe_4$ host lattice. The crystal field parameter Dq, the Racah parameter B and the spin-orbit coupling parameter $\lambda$ are given by $442cm^{-1}$, $425cm^{-1}$ and $440cm^{-1}$, respectively.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.13 no.6
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• pp.279-283
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• 2003

In this study, ZnTe : S single crystal thin films substituted by sulfur were grown on GaAs (100) substrates by hot-wall epitaxy. The photoluminescence (PL) characteristics of ZnTe : S single crystal thin films was measured to investigate the effects due to sulfur atoms in the ZnTe layer. The Peak of 2.339 eV identified as the isoelectronic center was observed in low temperature PL spectrum, but PL spectra which the origin had not been well-explained were not observed. Temperature dependence of PL intensities of the light hole free exciton was explained by extrinsic self-trapping. Besides it is reported that the emission lines near absorption edge at room temperature were observed.

• Electrical & Electronic Materials
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• v.10 no.3
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• pp.217-225
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• 1997

In this study, the PVDF organic thin film was fabricated by the physical vapor deposition method to be dry-process. The distance of heat source and substrate was 5[cm] and the temperature of substrate was 30[.deg. C], when the pressure had reached 2.0 x 10$^{-5}$ [Torr], the temperature of heat source was reached to 285[.deg. C] to heat at 6-8[.deg. C/min] rate, the shutter was opened and deposition was started. TG-DTA(Thermogravimetric-Differential Thermal Analysis) spectrum of PVDF pellets showed that endothermic peak arose at 170[.deg. C] and exothermic peak at 524[.deg. C], but that of thin PVDF film showed that endothermic peak arose at 145[.deg. C] and exothermic peak at 443[.deg C]. The current density was increased linearly with increasing voltage but increased nonlinearly with higher electric field than 250[kV/cm] and activation energy was about 0.667[eV] at the temperature of 30-90[.deg. C].

• Proceedings of the Korean Society of Medical Physics Conference
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• 2002.09a
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• pp.216-218
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• 2002

Fluence and LET spectrum for 290,400 MeV/u $\^$12/C and 400 MeV/u $\^$20/Ne beams have been measured by a $\Delta$E-E counter telescope. Total charge-changing cross sections are deduced from measured fluence. The measured cross sections agree with previous measurements, however, they are disagreement with a model calculation. To dose-averaged LETs, the model calculation can reproduce the measured LETs except for peak LETs at Bragg peak region.

• Proceedings of the Korean Vacuum Society Conference
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• 2014.02a
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• pp.166.1-166.1
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• 2014

We have controlled the graphene surface in two ways to improve the device performance of optoelectronics based on graphene transparent conductive films. We controlled multilayer graphene (MLG) work function and localized surface plasmon resonance wavelength using a silver nanoparticles formed on graphene surface. Graphene substrates were prepared using a chemical vapor deposition and transfer process. Various size of silver nanoparticles were prepared using a thermal evaporator and post annealing process on graphene surface. Silver nanoparticles were confirmed by using scanning electron microscopy (SEM). Work functions of graphene surface with various sizes of Ag nanoparticles were measured using ultraviolet photoelectron spectroscopy (UPS). The result shows that the work functions of MLG could be controlled from 4.39 eV to 4.55 eV by coating different amounts of silver nanoparticles while minimal changes in the sheet resistance and transmittance. Also the Localized surface plasmon resonance (LSPR) wavelength was investigated according to various sizes of silver nanoparticles. LSPR wavelength was measured using the absorbance spectrum, and we confirmed that the resonance wavelength could be controlled from 396nm to 425nm according to the size of silver nanoparticles on graphene surface. To confirm improvement of the device performance, we fabricated the organic solar cell based on MLG electrode. The results show that the work function and plasmon resonance wavelength could be controlled to improve the performance of optoelectronics device.

• Korean Journal of Materials Research
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• v.25 no.12
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• pp.708-712
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• 2015

This study reports the effects of $H_2S$ gas concentration on the properties of $Cu_2ZnSnS_4(CZTS)$ thin films. Specifically, sulfurization process with low $H_2S$ concentrations of 0.05% and 0.1%, along with 5% $H_2S$ gas, was studied. CZTS films were directly synthesized on Mo/Si substrates by chemical bath deposition method using copper sulfate, zinc sulfate heptahydrate, tin chloride dihydrate, and sodium thiosulfate pentahydrate. Smooth CZTS films were grown on substrates at optimized chemical bath deposition condition. The CZTS films sulfurized at low $H_2S$ concentrations of 0.05 % and 0.1% showed very rough and porous film morphology, whereas the film sulfurized at 5% $H_2S$ yielded a very smooth and dense film morphology. The CZTS films were fully crystallized in kesterite crystal form when they were sulfurized at $500^{\circ}C$ for 1 h. The kesterite CZTS film showed a reasonably good room-temperature photoluminescence spectrum that peaked in a range of 1.4 eV to 1.5 eV, consistent with the optimal bandgap for CZTS solar cell applications.