• Title/Summary/Keyword: $V_E$ Spectrum

Search Result 318, Processing Time 0.025 seconds

Clinical and Epidemiological Characteristics of Common Human Coronaviruses in Children: A Single Center Study, 2015-2019

  • Choi, Youn Young;Kim, Ye Kyung;Choi, Eun Hwa
    • Pediatric Infection and Vaccine
    • /
    • v.28 no.2
    • /
    • pp.101-109
    • /
    • 2021
  • Purpose: Common human coronaviruses (HCoVs) are relatively understudied due to the mild nature of HCoV infection. Given the lack of local epidemiology data on common HCoVs, we aimed to describe clinical and epidemiological characteristics of common HCoVs in children. Methods: Respiratory viral test results from 9,589 respiratory samples from Seoul National University Children's Hospital were analyzed from January 2015 to December 2019. Viral detection was done by the multiplex reverse transcription polymerase chain reaction. Demographics and clinical diagnosis were collected for previously healthy children tested positive for HCoVs. Results: Of the 9,589 samples tested, 1 or more respiratory viruses were detected from 5,017 (52.3%) samples and 463 (4.8%) samples were positive for HCoVs (OC43 2.8%, NL63 1.4%, 229E 0.7%). All 3 types co-circulated during winter months (November to February) with some variation by type. HCoV-OC43 was the most prevalent every winter season. HCoV-NL63 showed alternate peaks in late winter (January to March) and early winter (November to February). HCoV-229E had smaller peaks every other winter. Forty-one percent of HCoV-positive samples were co-detected with additional viruses; human rhinovirus 13.2%, respiratory syncytial virus 13.0%, influenza virus 4.3%. Common clinical diagnosis was upper respiratory tract infection (60.0%) followed by pneumonia (14.8%), croup (8.1%), and bronchiolitis (6.7%). Croup accounted for 17.0% of HCoV-NL63-positive children. Conclusions: This study described clinical and epidemiological characteristics of common HCoVs (OC43, NL63, 229E) in children. Continuing surveillance, perhaps by adding HKU1 in the diagnostic panel can further elucidate the spectrum of common HCoV infections in children.

Thermal Phenomenon of $BaMgAl_{10}O_{17}$:$Eu^{2+}$ Blue Phosphor by XANES and Rietveld Method

  • Kim, Kwang-Bok;Koo, Kyung-Wan;Chun, Hui-Gon
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
    • /
    • 2002.07a
    • /
    • pp.210-213
    • /
    • 2002
  • The blue phosphor, $BaMgAl_{10}O_{17}$:$Eu^{2+}$, showing a blue emission band at about 450 nm were prepared by solid state reaction of BaC $O_3$, A $l_2$ $O_3$, MgO and E $u_2$ $O_3$ with Al $F_3$ as a flux. The thermal quenching of BaMgAl $O_{17}$:E $u^{2+}$ phosphor significantly reduces the intensity of the blue emission. It is reduced by an amount of 50% after heating at around 800$^{\circ}C$ for 1 hr. The red emission in the 580∼720 nm region of $^{5}$ $D_{0}$\longrightarro $w^{7}$ $F_1$ and $^{5}$ $D_{0}$\longrightarro $w^{7}$ $F_2$ transition of $Eu^{3+}$ is produced from the phosphor heated above 1,100$^{\circ}C$. The EPR spectrum also reveals that some part of E $u^{2+}$ ions are oxidized to trivalent ions above 1,100$^{\circ}C$ at around 90 and 140mT. This oxidation evidence is also detected from XANES absorption spectra for $L_{III}$ shell of Eu ions: an absorption peak is at 6,977eV of E $u^{2+}$ and 6,984eV of $Eu^{3+}$. The combined X-ray and neutron data suggests that the new phase of EuMgA $l_{11}$ $O_{19}$ magnetoplumbite structure may be formed by heat treatment.eat treatment.tment.eat treatment.tment.t.

  • PDF

Growth and Characterization of a-Si :H and a-SiC:H Thin Films Grown by RF-PECVD

  • Kim, Y.T.;Suh, S.J.;Yoon, D.H.;Park, M.G.;Choi, W.S.;Kim, M.C.;Boo, J.-H.;Hong, B.;Jang, G.E.;Oh, M.H.
    • Journal of the Korean institute of surface engineering
    • /
    • v.34 no.5
    • /
    • pp.503-509
    • /
    • 2001
  • Thin films of hydrogenated amorphous silicon (a-Si : H) and hydrogenated amorphous silicon carbide (a-SiC:H) of different compositions were deposited on Si(100) wafer and glass by RF plasma-enhanced chemical vapor deposition (RF-PECVD). In the present work, we have investigated the effects of the RF power on the properties, such as optical band gap, transmittance and crystallinity. The Raman data show that the a-Si:H material consists of an amorphous and crystalline phase for the co-presence of two peaks centered at 480 and $520 cm^{-1}$ . The UV-VIS data suggested that the optical energy band gap ($E_{g}$ ) is not changed effectively with RF power and the obtained $E_{g}$(1.80eV) of the $\mu$c-Si:H thin film has almost the same value of a-Si:H thin film (1.75eV), indicating that the crystallity of hydrogenated amorphous silicon thin film can mainly not affected to their optical properties. However, the experimental results have shown that$ E_{g}$ of the a-SiC:H thin films changed little on the annealing temperature while $E_{g}$ increased with the RF power. The Raman spectrum of the a-SiC:H thin films annealed at high temperatures showed that graphitization of carbon clusters and microcrystalline silicon occurs.

  • PDF

A Study on Photoreflectance in $In_xGa_{1-x}As$(x=0.02) Epilayer Grown by MBE (MBE법으로 성장시킨 $In_xGa_{1-x}As$ (x=0.02) 에피층에서의 Photoreflectance에 관한 연구)

  • 김인수;이정열;배인호;김상기;안행근;박성배
    • Journal of the Korean Vacuum Society
    • /
    • v.5 no.2
    • /
    • pp.127-132
    • /
    • 1996
  • We measured photoreflectance spectrum characteristics of InGaAs grown by MBE method on semi-insulating GaAs. The PR signal splitting of substate and epilayer was observed. The band gap energy was about 1.40 eV. It make to 8 meV difference when it is fitted by Pan's equation. The reason is stress on the interface, which is due to lattice mismatch between epilayer and substate . We became to know that reason influence crystalline on growing sample. In InGaAs epilayer, temperature dependency is low. The efficiency of photo absorption is high and activate over 200K. In this case when it is annealed at $400^{\circ}C$ below growing temperature, PR signal splitting is remarkable and crystalline is inhanced.

  • PDF

Field Emission Characteristics a-C:F:N Film Deposited by Inductively Coupled Plasma Chemical Vapor Deposition

  • Jae, Chung-Suk;Jung, Han-Eun;Jang Jin
    • Journal of the Korean Vacuum Society
    • /
    • v.7 no.s1
    • /
    • pp.134-139
    • /
    • 1998
  • Amorphous fluorocarbon (a-C:F) is of interest for low dielectric interlayer material, but in this work we applied this material to FED field emitter. N-doped a-C:F films were deposited by inductively coupled plasma chemical vapor deposition (ICPCVD). The Raman spectra were measured to study the film structure and inter-band optical absorption coefficients were measured using Perkin-Elmer UV-VIS-IR spectrophotometer and optical band gap was obtained using Tauc's plot. XPS spectrum and AFM image were investigated to study bond structure and surface morphology. Current-electric field(I-E) characteristic of the film was measured for the characterization of electron emission properties. The optimum doping concentration was found to be [N2]/[CF4]=9% in the gas phase. The turn-on field and the emission current density at $[N_2]/[CF_4]$=9% were found to be 7.34V/$\mu\textrm{m}$ and 16 $\mu\textrm{A}/\textrm{cm}^2$ at 12.8V/$\mu\textrm{m}$, respectively.

  • PDF

Design of the Low Energy Electron Detector for DITSAT-B

  • Park, Young-Wan-;Min, Kyoung-Wook
    • Bulletin of the Korean Space Science Society
    • /
    • 1993.10a
    • /
    • pp.22-22
    • /
    • 1993
  • We developed the low energy electron detector (LEED) for KITSAT-B which was launched on September 26, 1998. The sensor head is mounted on the top of the satellite so that it can measure the precipitating electron flux along the Magnetic field line in the auroral zone at 820 km altitude. The detector system is composed of 4 parts : the electrostatic analyzer, the spira10on detector, the discriminator / Preamplifier, and the interface to the spacecraft. The analyzer limits the access to the spiraltron only to the electrons of certain energies which are determined by the electrostatic field across the two coaxial cylindrical analyzer plates. The energy spectrum of the detector in consideration is about 100 eV to 6.7 KeV, which is swept in 1.6 seconds and divided into 16 bins. It 81so is 1.6 second reset period after each swept, We will discuss the technical features of the system as well as the future observational schedule.

  • PDF

Preparation and Characterization of Dinuclear Metal Complexes, $[(PPh_3)_2(CO)M({\mu}-E)M(CO)(PPh_3)_2](SO_3CF_3)_2$ (M = Rh, Ir; E = 1,4-Dicyanobenzene and 1,4-Dicyano-2-butene)

  • Moonsik Kim;JaeKyun Chin;Jaejung Ko
    • Bulletin of the Korean Chemical Society
    • /
    • v.13 no.5
    • /
    • pp.556-559
    • /
    • 1992
  • Hydrocarbon solution of $(PPh_3)_2(CO)MOSO_2CF_3$ (M= Rh, Ir) reacts rapidly with 1,4-dicyanobenzene or 1,4-dicyano-2-butene to yield dinuclear metal complexes $[(PPh_3)_2(CO)M({\mu}-dicyanobenzene)M(CO)(PPh_3)_2](SO_3CF_3)_2$ (I: M = Rh; II: M = Ir) or $[(PPh_3)_2(CO)M({\mu}-dicyano-2-benzene)M(CO)(PPh_3)_2](SO_3CF_3)_2$ (III: M = Rh; IV: M = Ir), respectively. Compounds I, II, III, and IV were characterized by $^1H$-NMR, $^{31}P$-NMR, and infrared spectrum. Dichloromethane solution of II and IV reacts with $H_2\;and\;I_2$ to yield oxidative addition complexes $[(PPh_3)_2(CO)IrX_2({\mu}-E)X_2Ir(CO)(PPh_3)_2](SO_3CF_3)_2$ (V; E = 1,4-dicyanobenzene, $X_2$ = $H_2$; VI : E = 1,4-dicyano-2-butene, $X_2$ = $H_2$; VII; E = 1,4-dicyanobenzene, $X_2$ = $I_2$). All metal complexes are bridged by the cyanide groups. Compounds Ⅴ, Ⅵ, and Ⅶ are characterized by conventional methods.

The Defect Characterization of CaWO4 Crystals by Doppler Broadening Positron Annihilation Spectroscopy (DBPAS를 이용한 CaWO4 결정의 결함특성)

  • Kim, Chang-Gyu;An, Chang-Mo;Song, Gi-Yeong;Lee, Jong-Yong
    • Korean Journal of Materials Research
    • /
    • v.12 no.5
    • /
    • pp.359-362
    • /
    • 2002
  • DBPAS has been used to characterize atomic level defect structures in materials. In this investigation the numerical analysis of the Doppler spectra was restricted to the determination of the shape parameter, S, defined as the ratio between the total amount of counts in a central portion of the spectrum and the total amount of counts. As samples were exposed by X-ray increasing from 3, 6, and 9 Gy with 6 MV, and 10 MV each and also by E-beam increasing the energies with 6 MeV, 9 MeV, 12 MeV, and 20 MeV. The S-parameter values were increased as increasing the exposed time and the energies. The S-parameters of the large and small size grains in $CaWO_4$ were measured. The S-parameter of the small size grains in $CaWO_4$ was resulted in larger values.

The physical properties and the dyeability of the easily dyeable polyester yarn under atmospheric pressure (상압가염형 폴리에스테르 섬유의 물성과 염색성)

  • Kim, Tae Gyeong;Yun, Seok Han;Sin, Sang Yeop;Im, Yong Jin;Jo, Gyu Min
    • Textile Coloration and Finishing
    • /
    • v.13 no.6
    • /
    • pp.33-33
    • /
    • 2001
  • The physical properties and the dyeability of the easily dyeable polyester yarn(EDY) were investigated and compared with those of regular polyester (REG-PET). The EDY, copolymerized with small amount of polyethylene glycol(PEG), showed higher intensity of aliphatic CH peak in IR spectrum, lower density and lower compactness than those of the REG-PET from the analysis of IR, density gradient column and XRD respectively. In the physical properties, the EDY has lowers $T_g,\;T_m$, specific stress and initial modulus, and also has higher strain than that of the REG-PET. The EDY can be dyed under atmospheric pressure and its dyeing rate was faster than REG-PET due to low $T_d$, and this seems to be caused by the increased flexibility of Polymer chain in amorphous region of the EDY due to the copolymerization of PEG.ns being within the experimental error, the average values of lifetim. $\tau$(t) are taken for further calculations. Rate constants such as Stern-Volmer quenching constants K$_{sv}$, quenching rate parameters k$_q$ and k''$_q$, static quenching constant V and kinetic distance r are determined using the modified Stern-Volmer eq.tion and sphere of action static quenching model. In order to see whether the reactions are diffusion limited, equations k$_q$ = e$^{-Eq/RT}$ and k''$_q$ = e$^{-Eq/RT}$ are used to determine the values of E$_q$ and E''$_q$, the activati. energies for collisional quenching and the values of E$_q$ are 14.53, 17.28 and 16.20 kJ mole$^{-1}$ for MPNO1, MPNO2 and 2-PI respectively and the values of E''$_q$ are 14.62 and 17.73 for MPNO1 and MPNO2 respectively. From the magnitudes of various quantities it has.een concluded that the reactions are diffusion limited and the observed positive deviations in the S-V plot are due to static and dynamic quenching.

Photoluminescence of Nanocrystalline CdS Thin Films Prepared by Chemical Bath Deposition

  • Park, Wug-Dong
    • Transactions on Electrical and Electronic Materials
    • /
    • v.11 no.4
    • /
    • pp.170-173
    • /
    • 2010
  • Nanocrystalline cadmium sulfide (CdS) thin films were prepared using chemical bath deposition in a solution bath containing $CdSO_4$, $SC(NH_2)_2$, and $NH_4OH$. The CdS thin films were investigated using X-ray diffraction (XRD), photoluminescence (PL), and Fourier transform infrared spectroscopy (FTIR). The as-deposited CdS thin film prepared at $80^{\circ}C$ for 60 min had a cubic phase with homogeneous and small grains. In the PL spectrum of the 2,900 A-thick CdS thin film, the broad red band around 1.7 eV and the broad high-energy band around 2.7 eV are attributed to the S vacancy and the band-to-band transition, respectively. As the deposition time increases to over 90 min, the PL intensity from the band-to-band transition significantly increases. The temperature dependence of the PL intensity for the CdS thin films was studied from 16 to 300 K. The $E_A$ and $E_B$ activation energies are obtained by fitting the temperature dependence of the PL intensity. The $E_A$ and $E_B$ are caused by the deep trap and shallow surface traps, respectively. From the FTIR analysis of the CdS thin films, a broad absorption band of the OH stretching vibration in the range $3,000-3,600\;cm^{-1}$ and the peak of the CN stretching vibration at $2,000\;cm^{-1}$ were found.